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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD14N60E-BE3

Name: SIHD14N60E-BE3
Brand: Vishay Siliconix
SKU: SIHD14N60E-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD14N60E-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD14N60E-BE3.pdf

Description:: MOSFET N-CH 600V 13A TO252AA

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Product details

Overview

SIHD14N60E-BE3 from Vishay Siliconix is a 600 V, 13 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 0.269 Ω at V_GS = 10 V, Q_g = 32 nC (typ), and avalanche-rated (E_AS = 136 mJ). It serves as a high-voltage switching element in offline SMPS primary-side circuits, PFC boost stages, and industrial motor drive inverters.

For engineers reviewing the SIHD14N60E-BE3 datasheet, SIHD14N60E-BE3 pinout, SIHD14N60E-BE3 application, or SIHD14N60E-BE3 equivalent, key selection criteria include its 600 V V_DS rating, low gate charge for high-frequency hard-switching, robust body diode (t_rr = 281 ns), and TO-252 thermal performance (R_thJC = 0.85 °C/W).

Technical Context

This device employs planar VDMOS technology optimized for high-voltage power conversion. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) enables standard 10 V gate drivers, while low C_iss (1205 pF) and ultra-low Q_gd/Q_g ratio (13/32 nC) reduce switching losses and improve EMI behavior in 50–100 kHz SMPS topologies.

The integral body diode supports synchronous rectification and unclamped inductive switching, with validated dV/dt immunity (70 V/ns at T_J = 125 °C) and UIS ruggedness. Thermal design leverages the DPAK's low junction-to-case resistance for conduction-limited operation up to 100 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V AC mains input with 50 % safety margin in bridge rectified PFC and flyback designs
R_DS(on) typ	0.269 Ω at V_GS = 10 V - Enables <1.3 W conduction loss at 7 A DC, suitable for 150–300 W power stages
Q_g max	64 nC - Limits gate drive power requirement; compatible with common 1 A peak gate drivers at 100 kHz
E_AS	136 mJ - Withstands single-pulse inductive energy without failure in 28.2 mH test circuit per JEDEC JESD24-1
t_r/t_f	19/15 ns (typ) - Enables fast turn-on/off transitions with minimal overlap loss in hard-switched converters
R_thJC	0.85 °C/W - Allows 147 W continuous dissipation with modest heatsinking on PCB copper pour
V_SD	1.2 V at I_S = 7 A - Low forward drop reduces reverse recovery losses during freewheeling in half-bridge configurations

Pinout & Package

SIHD14N60E-BE3 is housed in a surface-mount DPAK (TO-252) package with exposed drain pad for thermal and electrical connection. The package features three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the large tab for low-inductance, high-current paths.

Pin/Terminal	Circuit Role	Design Meaning
G	Control electrode	Receives gate drive signal; requires 10 V for full enhancement; input capacitance C_iss = 1205 pF affects driver sizing
D	High-side power terminal	Connected to drain of internal MOSFET; tied to exposed metal tab; carries main load current and must be routed with low-inductance copper
S	Reference and return path	Source node for gate drive reference; forms return path for load current; connects to power ground plane

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	8.6 Ω·nC - Reduces combined conduction and switching losses in high-frequency SMPS, improving efficiency >92 % at 100 kHz
Avalanche energy rated (UIS)	136 mJ - Eliminates need for external snubbers in inductive load switching, enhancing system reliability
Ultra-low Q_gd	13 nC - Minimizes Miller plateau duration, enabling stable operation with fast gate drivers and reducing risk of spurious turn-on
Body diode t_rr	281 ns - Supports moderate-frequency freewheeling in half-bridge and LLC resonant converters without excessive diode loss
High dV/dt immunity	70 V/ns at T_J = 125 °C - Ensures noise immunity in high dv/dt environments like motor drives and PFC stages

Applications

Server Power Supply	Industrial Motor Drive
Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1 kW server PSU using active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching transistor controlling energy transfer from bulk DC bus to transformer primary. Use Value: 600 V rating accommodates 400 V DC bus with margin; low Q_g enables efficient 100–200 kHz operation with reduced gate drive loss.	Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter driving 3 kW induction motor in HVAC compressor. IC Role / Device Role / Timing Role: High-side power switch in inverter leg, commutating motor phase current under PWM control. Use Value: Avalanche rating handles inductive kickback during fault conditions; R_thJC = 0.85 °C/W allows direct mounting to aluminum heatsink without thermal interface pad.
Solar PV Inverter	Fluorescent Ballast
Use Scenario: Boost switch in string-level MPPT stage of 5 kW grid-tied solar inverter. IC Role / Device Role / Timing Role: DC-DC boost converter switch regulating input voltage to match inverter DC link requirements. Use Value: 600 V V_DS supports up to 1000 V open-circuit PV string; low C_oss (62 pF) minimizes turn-off loss at high bus voltages.	Use Scenario: Resonant switch in electronic fluorescent lamp ballast operating at 25–50 kHz. IC Role / Device Role / Timing Role: Half-bridge switch generating high-frequency AC to excite lamp filaments and sustain arc discharge. Use Value: Fast t_r/t_f (19/15 ns) ensures clean square-wave switching; integrated body diode eliminates need for external antiparallel diode.

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1 kW server PSU using active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching transistor controlling energy transfer from bulk DC bus to transformer primary.

Use Value: 600 V rating accommodates 400 V DC bus with margin; low Q_g enables efficient 100–200 kHz operation with reduced gate drive loss.

Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter driving 3 kW induction motor in HVAC compressor.

IC Role / Device Role / Timing Role: High-side power switch in inverter leg, commutating motor phase current under PWM control.

Use Value: Avalanche rating handles inductive kickback during fault conditions; R_thJC = 0.85 °C/W allows direct mounting to aluminum heatsink without thermal interface pad.

Solar PV Inverter

Fluorescent Ballast

Use Scenario: Boost switch in string-level MPPT stage of 5 kW grid-tied solar inverter.

IC Role / Device Role / Timing Role: DC-DC boost converter switch regulating input voltage to match inverter DC link requirements.

Use Value: 600 V V_DS supports up to 1000 V open-circuit PV string; low C_oss (62 pF) minimizes turn-off loss at high bus voltages.

Use Scenario: Resonant switch in electronic fluorescent lamp ballast operating at 25–50 kHz.

IC Role / Device Role / Timing Role: Half-bridge switch generating high-frequency AC to excite lamp filaments and sustain arc discharge.

Use Value: Fast t_r/t_f (19/15 ns) ensures clean square-wave switching; integrated body diode eliminates need for external antiparallel diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK60ZFP	600 V, 14 A, R_DS(on) = 0.32 Ω, Q_g = 45 nC, TO-220FP package	Higher R_DS(on) and Q_g; through-hole mounting; higher R_thJC (1.2 °C/W)	Preferred where mechanical robustness and vertical heatsinking are prioritized over board space and switching speed
IXTH12N60L2	600 V, 12 A, R_DS(on) = 0.33 Ω, Q_g = 22 nC, TO-247 package	Lower Q_g but larger footprint; higher cost; no integrated avalanche rating	Selected when ultra-low gate charge dominates over avalanche ruggedness and board area constraints

Compared with STP14NK60ZFP and IXTH12N60L2, SIHD14N60E-BE3 delivers superior R_DS(on) × Q_g figure-of-merit in a compact DPAK, making it optimal for space-constrained, high-efficiency 100–200 kHz power supplies where thermal performance and avalanche immunity are critical.

Availability

SIHD14N60E-BE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHD14N60E-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFETs, including SIHD14N60E-BE3, were engineered for high-voltage, high-efficiency switching in telecom, industrial, and renewable energy systems-emphasizing low FOM, avalanche ruggedness, and thermally efficient packaging.

FAQ

What is the maximum continuous drain current rating for SIHD14N60E-BE3 at 100 °C case temperature?

The SIHD14N60E-BE3 has a continuous drain current rating of 8 A at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and ensures safe operation without exceeding the 150 °C maximum junction temperature. The SIHD14N60E-BE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHD14N60E-BE3 have an avalanche-rated specification, and how is it tested?

Yes, SIHD14N60E-BE3 is avalanche energy rated with E_AS = 136 mJ (single pulse), tested per JEDEC JESD24-1 using V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.1 A. This rating confirms ruggedness against inductive switching transients. The SIHD14N60E-BE3 does not require external clamping in properly designed PFC or motor drive circuits.

What is the gate threshold voltage range for SIHD14N60E-BE3, and why does it matter for gate drive design?

The gate threshold voltage V_GS(th) for SIHD14N60E-BE3 is 2.0–4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. For robust operation, the SIHD14N60E-BE3 requires ≥8 V to achieve near-minimum R_DS(on), and gate drive must supply sufficient peak current to charge Q_g = 32 nC rapidly.

How does the body diode performance of SIHD14N60E-BE3 compare to discrete diodes in freewheeling applications?

The SIHD14N60E-BE3 body diode has V_SD = 1.2 V at I_S = 7 A and t_rr = 281 ns, offering lower forward drop than many 600 V FRDs but slower recovery than dedicated SiC Schottky diodes. In half-bridge freewheeling, the SIHD14N60E-BE3 body diode eliminates external components but requires careful layout to manage reverse recovery current spikes.

Is SIHD14N60E-BE3 lead (Pb)-free and halogen-free, and what is its RoHS compliance status?

Yes, SIHD14N60E-BE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912. The "-BE3" suffix explicitly denotes this environmental compliance. The SIHD14N60E-BE3 uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30 °C/60 % RH.

SIHD14N60E-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 309mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1205 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

SIHD14N60E-BE3 FAQ

1.How can I place an order for SIHD14N60E-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD14N60E-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD14N60E-BE3 reliable?

The price and inventory of SIHD14N60E-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD14N60E-BE3 is usually 5 days.

3.What payment methods are accepted for SIHD14N60E-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD14N60E-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD14N60E-BE3?

SIHD14N60E-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD14N60E-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD14N60E-BE3?

For technical support, including SIHD14N60E-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD14N60E-BE3 requirements.

6.How does Aetrix verify that SIHD14N60E-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHD14N60E-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD14N60E-BE3 meets industry standards.

7.What is the process for return or replacement of SIHD14N60E-BE3?

All SIHD14N60E-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD14N60E-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD14N60E-BE3 part is unused and in its original packaging.

Return procedure for SIHD14N60E-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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