Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD14N60ET1-GE3

Name: SIHD14N60ET1-GE3
Brand: Vishay Siliconix
SKU: SIHD14N60ET1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHD14N60ET1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD14N60ET1-GE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,597

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHD14N60ET1-GE3 from Vishay Siliconix is a 600 V, 13 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 0.269 Ω at V_GS = 10 V, Q_g = 32 nC (typ), and avalanche-rated (E_AS = 136 mJ). It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and solar inverters.

For engineers reviewing the SIHD14N60ET1-GE3 datasheet, SIHD14N60ET1-GE3 pinout, SIHD14N60ET1-GE3 application, or SIHD14N60ET1-GE3 equivalent, key selection criteria include its 600 V V_DS rating, low gate charge for high-frequency hard-switching, robust UIS capability, and thermal resistance of R_thJC = 0.85 °C/W - critical for compact power supply designs requiring reliability under repetitive stress.

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage switching with low conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures stable turn-on under wide drive conditions, while the integral body diode supports freewheeling in bridge configurations.

The MOSFET is characterized for operation up to T_J = 150 °C, with normalized R_DS(on) drift of +0.73 V/°C and dV/dt immunity of 70 V/ns (T_J = 125 °C), enabling use in noisy industrial environments without spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % safety margin for surge and ringing
R_DS(on) typ @ 10 V	0.269 Ω - enables ≤1.3 W conduction loss at 7 A continuous drain current
Q_g max	64 nC - allows efficient gate drive with standard 1 A peak drivers at 100–300 kHz switching
E_AS	136 mJ - withstands unclamped inductive energy during fault events without failure
R_thJC	0.85 °C/W - delivers 147 W power dissipation capability with minimal case-to-heatsink ΔT
C_iss	1205 pF - limits capacitive loading on gate driver, supporting fast edge rates
V_SD @ 7 A	1.2 V - reduces reverse conduction loss in synchronous rectification or half-bridge freewheeling

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; 3-pin surface-mount outline per Vishay document 71197 (Revision 03-Oct-2022).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires < ±30 V absolute rating
D (Drain)	High-side power output	Connected to high-voltage rail (e.g., PFC output or inverter DC link); electrically tied to heatsink via exposed pad
S (Source)	Reference and return path	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery charge (Q_rr = 3.4 μC)

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	8.6 Ω·nC - balances conduction and switching loss for optimal efficiency in 100–250 kHz PFC converters
Avalanche energy rated (UIS)	136 mJ single-pulse - eliminates need for external snubbers in inductive load switching
Ultra-low Q_gd/Q_g ratio	13/64 ≈ 20 % - improves Miller immunity and reduces risk of false turn-on during high dV/dt transitions
Low C_oss (62 pF)	Enables reduced turn-off energy loss and faster voltage rise time in ZVS-capable topologies
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for green industrial and telecom systems

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in LLC resonant converter delivering 1–3 kW to server motherboard VRMs. IC Role / Device Role / Timing Role: High-voltage switching transistor handling 400 V DC input, operating at 200–300 kHz with zero-voltage switching. Use Value: Low Q_g and C_iss minimize gate drive loss and improve ZVS soft-start margin; R_thJC = 0.85 °C/W enables direct mounting to compact heatsinks.	Use Scenario: DC-link switch in three-phase string inverter stage converting 600–1000 V DC from PV arrays to grid-synchronized AC. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM H-bridge leg, managing bidirectional energy flow. Use Value: 600 V rating covers 1000 V DC max with margin; E_AS = 136 mJ sustains transient overvoltage during anti-islanding shutdown.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Inverter leg switch in 0.75–2.2 kW variable-frequency drives for HVAC blowers and pumps. IC Role / Device Role / Timing Role: Half-bridge high-side switch controlling motor phase voltage with 1–16 kHz PWM modulation. Use Value: Body diode t_rr = 281 ns and Q_rr = 3.4 μC reduce commutation loss and EMI during freewheeling; V_GS(th) range prevents shoot-through at elevated temperature.	Use Scenario: Resonant switch in electronic ballast driving 40–125 W fluorescent lamps with instant start and dimming. IC Role / Device Role / Timing Role: High-frequency (25–65 kHz) series-resonant inverter switch generating high-voltage lamp ignition pulses. Use Value: Low C_oss and fast t_r/t_f support precise resonant timing control; 150 °C T_J rating accommodates enclosed fixture thermal environments.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in LLC resonant converter delivering 1–3 kW to server motherboard VRMs.

IC Role / Device Role / Timing Role: High-voltage switching transistor handling 400 V DC input, operating at 200–300 kHz with zero-voltage switching.

Use Value: Low Q_g and C_iss minimize gate drive loss and improve ZVS soft-start margin; R_thJC = 0.85 °C/W enables direct mounting to compact heatsinks.

Use Scenario: DC-link switch in three-phase string inverter stage converting 600–1000 V DC from PV arrays to grid-synchronized AC.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM H-bridge leg, managing bidirectional energy flow.

Use Value: 600 V rating covers 1000 V DC max with margin; E_AS = 136 mJ sustains transient overvoltage during anti-islanding shutdown.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Inverter leg switch in 0.75–2.2 kW variable-frequency drives for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Half-bridge high-side switch controlling motor phase voltage with 1–16 kHz PWM modulation.

Use Value: Body diode t_rr = 281 ns and Q_rr = 3.4 μC reduce commutation loss and EMI during freewheeling; V_GS(th) range prevents shoot-through at elevated temperature.

Use Scenario: Resonant switch in electronic ballast driving 40–125 W fluorescent lamps with instant start and dimming.

IC Role / Device Role / Timing Role: High-frequency (25–65 kHz) series-resonant inverter switch generating high-voltage lamp ignition pulses.

Use Value: Low C_oss and fast t_r/t_f support precise resonant timing control; 150 °C T_J rating accommodates enclosed fixture thermal environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK60ZFP	600 V, 14 A, R_DS(on) = 0.32 Ω, Q_g = 45 nC, TO-220FP package	Higher R_DS(on) and Q_g; through-hole mounting only	Preferred where board space permits through-hole layout and lower switching frequency (< 100 kHz) is acceptable
IXTH14N60L2	600 V, 14 A, R_DS(on) = 0.28 Ω, Q_g = 42 nC, TO-247 package	Larger footprint, higher thermal mass, no surface-mount option	Selected when maximum power handling (> 200 W) and forced-air cooling require TO-247 mechanical robustness

Compared with STP14NK60ZFP and IXTH14N60L2, SIHD14N60ET1-GE3 offers superior switching efficiency per unit area due to its DPAK footprint and lowest Q_g, making it optimal for space-constrained, high-frequency power supplies where thermal interface resistance must be minimized.

Availability

SIHD14N60ET1-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHD14N60ET1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The E Series Power MOSFETs, including SIHD14N60ET1-GE3, were designed for high-voltage, high-efficiency switching in telecom, server, and renewable energy systems where low R_DS(on) × Q_g and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current rating for SIHD14N60ET1-GE3 at 100 °C case temperature?

The SIHD14N60ET1-GE3 has a continuous drain current rating of 8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and ensures safe operation within its 147 W maximum power dissipation limit when properly heatsinked.

Does SIHD14N60ET1-GE3 support logic-level gate drive?

No, SIHD14N60ET1-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Reliable enhancement-mode operation requires ≥10 V gate drive; 5 V logic signals will not fully turn on the device and may cause excessive heating.

What is the significance of the "-GE3" suffix in SIHD14N60ET1-GE3?

The "-GE3" suffix denotes Vishay's lead (Pb)-free and halogen-free packaging per JEDEC JS709C and RoHS Directive 2011/65/EU. It identifies the part as green-compliant with matte tin (Sn) termination finish and compliant moisture sensitivity level (MSL) 1 rating for standard SMT reflow processes.

Can SIHD14N60ET1-GE3 be used in synchronous rectification topologies?

Yes, SIHD14N60ET1-GE3 can be used in synchronous rectification, particularly in secondary-side high-voltage DC-DC converters. Its body diode forward voltage (V_SD = 1.2 V at 7 A) and reverse recovery parameters (t_rr = 281 ns, Q_rr = 3.4 μC) are suitable for controlled turn-off, though external gate control is required to avoid cross-conduction in half-bridge configurations.

How does the avalanche rating of SIHD14N60ET1-GE3 impact system design?

The SIHD14N60ET1-GE3 is fully rated for single-pulse unclamped inductive switching (UIS) with E_AS = 136 mJ. This allows designers to eliminate or simplify snubber networks in flyback, forward, and resonant converters, improving power density and reducing component count - provided layout minimizes parasitic inductance to prevent localized overstress.

SIHD14N60ET1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 309mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1205 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

SIHD14N60ET1-GE3 FAQ

1.How can I place an order for SIHD14N60ET1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD14N60ET1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD14N60ET1-GE3 reliable?

The price and inventory of SIHD14N60ET1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD14N60ET1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD14N60ET1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD14N60ET1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD14N60ET1-GE3?

SIHD14N60ET1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD14N60ET1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD14N60ET1-GE3?

For technical support, including SIHD14N60ET1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD14N60ET1-GE3 requirements.

6.How does Aetrix verify that SIHD14N60ET1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD14N60ET1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD14N60ET1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD14N60ET1-GE3?

All SIHD14N60ET1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD14N60ET1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD14N60ET1-GE3 part is unused and in its original packaging.

Return procedure for SIHD14N60ET1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …