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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD14N60ET4-GE3

Name: SIHD14N60ET4-GE3
Brand: Vishay Siliconix
SKU: SIHD14N60ET4-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD14N60ET4-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD14N60ET4-GE3.pdf

Description:: N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHD14N60ET4-GE3 from Vishay Siliconix is a 600 V, 13 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, optimized for high-efficiency switch-mode power supplies and PFC stages. It delivers R_DS(on) = 0.269 Ω at V_GS = 10 V, Q_g = 32 nC (typ), and avalanche-rated UIS energy of 136 mJ - enabling reduced conduction and switching losses in 480 V DC bus applications such as telecom rectifiers and solar inverters.

For engineers reviewing the SIHD14N60ET4-GE3 datasheet, SIHD14N60ET4-GE3 pinout, SIHD14N60ET4-GE3 application, or SIHD14N60ET4-GE3 equivalent, this page provides verified package mapping, validated thermal and dynamic parameters, confirmed body diode performance (V_SD = 1.2 V, t_rr = 281 ns), and real-world alternative part guidance for industrial power design.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized gate charge distribution to achieve low FOM (R_DS(on) × Q_g) of 8.6 Ω·nC (typ). Its C_iss = 1205 pF and C_oss = 62 pF support fast, controlled switching under hard-switched 480 V conditions while maintaining dV/dt immunity up to 70 V/ns at T_J = 125 °C.

The integrated body diode is rated for continuous I_S = 13 A and pulsed I_SM = 32 A, with reverse recovery charge Q_rr = 3.4 μC and peak recovery current I_RRM = 22 A - characteristics critical for ZVS-capable PFC and resonant LLC topologies where diode behavior directly impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 480 V DC bus designs with 20 % margin for voltage transients in telecom and solar inverters
R_DS(on) typ @ 10 V	0.269 Ω - enables <1.3 W conduction loss at 7 A continuous drain current in thermally constrained DPAK layout
Q_g typ	32 nC - reduces gate drive power and allows use of lower-cost 1 A peak gate drivers in SMPS control ICs
E_AS	136 mJ - ensures robustness against unclamped inductive switching events in motor drives and welding equipment
t_r/t_f	19/15 ns (typ) - supports >200 kHz switching frequencies with minimal overlap loss in hard-switched converters
V_SD @ 7 A	1.2 V - lowers body diode conduction loss during dead-time in half-bridge configurations
R_thJC	0.85 °C/W - permits 147 W power dissipation with ≤125 °C case temperature using standard copper pour heatsinking

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures reliable turn-on with standard PWM controllers
D (Drain)	High-side power terminal	Connected to exposed metal tab - must be electrically isolated and thermally coupled to heatsink or PCB copper pour
S (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; ties to power ground in buck/PFC configurations

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	8.6 Ω·nC (typ) - directly improves efficiency in high-frequency, high-current SMPS by minimizing combined switching + conduction loss
Avalanche energy rating	136 mJ single-pulse - eliminates need for external snubbers in inductive load switching, reducing BOM count in industrial motor controls
Ultra-low C_oss	62 pF - minimizes capacitive turn-off loss and improves light-load efficiency in resonant topologies
Body diode t_rr	281 ns - enables predictable zero-voltage switching timing in LLC half-bridges without requiring external diode replacement
150 °C T_J rating	Supports operation in sealed enclosures or high-ambient environments like solar inverters mounted on rooftops

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 480 V DC input, switching at 100–150 kHz with synchronous rectification on secondary. Use Value: Low Q_g and R_DS(on) reduce gate drive loss and conduction loss, achieving >95 % efficiency at full load while maintaining thermal margin on 2-layer PCB.	Use Scenario: DC-link switching stage in string inverter converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: N-channel switch in H-bridge leg, operating with 180° complementary drive and dead-time control. Use Value: Avalanche rating and robust body diode enable safe operation during grid fault transients and reactive power cycling without external protection.
Industrial Motor Drive	PFC Front-End
Use Scenario: Inverter output stage for 5 kW induction motor drive in HVAC compressors. IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter, commutating 13 A RMS phase current. Use Value: 136 mJ UIS rating withstands motor inductive kickback during emergency stop, eliminating need for TVS clamping on each leg.	Use Scenario: Boost switch in continuous conduction mode (CCM) PFC stage for 2 kW LED driver. IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz with 0.99 power factor correction. Use Value: Low C_iss and fast t_r/t_f minimize switching loss at high line voltage, while V_SD = 1.2 V reduces boost diode reverse recovery stress.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 480 V DC input, switching at 100–150 kHz with synchronous rectification on secondary.

Use Value: Low Q_g and R_DS(on) reduce gate drive loss and conduction loss, achieving >95 % efficiency at full load while maintaining thermal margin on 2-layer PCB.

Use Scenario: DC-link switching stage in string inverter converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: N-channel switch in H-bridge leg, operating with 180° complementary drive and dead-time control.

Use Value: Avalanche rating and robust body diode enable safe operation during grid fault transients and reactive power cycling without external protection.

Industrial Motor Drive

PFC Front-End

Use Scenario: Inverter output stage for 5 kW induction motor drive in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter, commutating 13 A RMS phase current.

Use Value: 136 mJ UIS rating withstands motor inductive kickback during emergency stop, eliminating need for TVS clamping on each leg.

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC stage for 2 kW LED driver.

IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz with 0.99 power factor correction.

Use Value: Low C_iss and fast t_r/t_f minimize switching loss at high line voltage, while V_SD = 1.2 V reduces boost diode reverse recovery stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK60ZFP	R_DS(on) = 0.36 Ω (higher), Q_g = 42 nC (higher), TO-220FP package	Larger footprint and higher thermal resistance (R_thJC = 1.25 °C/W) limit power density in space-constrained PFC modules	Preferred only when TO-220FP mechanical mounting is required and efficiency targets allow ~15 % higher conduction loss
IXTH14N60L2	R_DS(on) = 0.28 Ω (comparable), Q_g = 26 nC (lower), but no UIS rating specified	Lacks avalanche energy spec - requires external clamping in inductive load applications like welding or motor drives	Valid for non-inductive SMPS where transient overvoltage risk is mitigated by system-level protection

Compared with STP14NK60ZFP and IXTH14N60L2, SIHD14N60ET4-GE3 uniquely balances low R_DS(on), moderate Q_g, and certified UIS capability in the compact DPAK package - making it optimal for high-reliability, high-density industrial and renewable energy power stages where both efficiency and ruggedness are mandatory.

Availability

SIHD14N60ET4-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHD14N60ET4-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHD14N60ET4-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-frequency switch-mode power conversion in telecom, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHD14N60ET4-GE3 at 100 °C case temperature?

The SIHD14N60ET4-GE3 has a continuous drain current rating of 8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and ensures safe operation under sustained high-power conditions without exceeding the 150 °C maximum junction temperature. The SIHD14N60ET4-GE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHD14N60ET4-GE3 have a specified avalanche energy rating, and how is it tested?

Yes, SIHD14N60ET4-GE3 is rated for single-pulse unclamped inductive switching (UIS) with E_AS = 136 mJ. Testing follows JEDEC standard JESD24-11: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.1 A. This rating confirms ruggedness against inductive turn-off transients in motor drives and welding equipment. The SIHD14N60ET4-GE3 data sheet explicitly lists this value in the Absolute Maximum Ratings section.

What is the gate threshold voltage range for SIHD14N60ET4-GE3, and why does it matter for drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHD14N60ET4-GE3 is specified as 2.0–4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while preventing accidental activation from noise. Because the SIHD14N60ET4-GE3 is not a logic-level device, a minimum 10 V drive is recommended to achieve its rated R_DS(on) of 0.269 Ω - critical for minimizing conduction loss in high-current applications.

How does the body diode performance of SIHD14N60ET4-GE3 compare to standard FRDs in PFC applications?

The SIHD14N60ET4-GE3 body diode has V_SD = 1.2 V at I_S = 7 A and t_rr = 281 ns at T_J = 25 °C, with Q_rr = 3.4 μC. While slower than dedicated fast recovery diodes (FRDs), its parameters are optimized for synchronous rectification and soft-switching topologies. In CCM PFC, the SIHD14N60ET4-GE3's body diode reduces reverse recovery stress on the boost diode - unlike generic MOSFETs, its datasheet fully characterizes these parameters, enabling accurate simulation of dead-time effects in the SIHD14N60ET4-GE3-based design.

Is SIHD14N60ET4-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHD14N60ET4-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings table. The "-GE3" suffix denotes Vishay's lead (Pb)-free and halogen-free construction, compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1. This makes the SIHD14N60ET4-GE3 suitable for modern automated assembly lines without requiring special pre-bake or process adjustments.

SIHD14N60ET4-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 309mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1205 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

SIHD14N60ET4-GE3 FAQ

1.How can I place an order for SIHD14N60ET4-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD14N60ET4-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD14N60ET4-GE3 reliable?

The price and inventory of SIHD14N60ET4-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD14N60ET4-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD14N60ET4-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD14N60ET4-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD14N60ET4-GE3?

SIHD14N60ET4-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD14N60ET4-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD14N60ET4-GE3?

For technical support, including SIHD14N60ET4-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD14N60ET4-GE3 requirements.

6.How does Aetrix verify that SIHD14N60ET4-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD14N60ET4-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD14N60ET4-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD14N60ET4-GE3?

All SIHD14N60ET4-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD14N60ET4-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD14N60ET4-GE3 part is unused and in its original packaging.

Return procedure for SIHD14N60ET4-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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