Vishay Siliconix SIHD14N60ET5-GE3

Overview

SIHD14N60ET5-GE3 from Vishay Siliconix is a 600 V, 13 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 0.269 Ω at V_GS = 10 V, Q_g = 32 nC (typ), and avalanche-rated (E_AS = 136 mJ). It serves as a high-voltage switching element in primary-side SMPS and PFC stages of server and telecom power supplies.

For engineers reviewing the SIHD14N60ET5-GE3 datasheet, SIHD14N60ET5-GE3 pinout, SIHD14N60ET5-GE3 application, or SIHD14N60ET5-GE3 equivalent, key selection criteria include its 600 V V_DS rating, low gate charge for reduced switching loss, TO-252 thermal performance (R_thJC = 0.85 °C/W), and UIS ruggedness for inductive load handling.

Technical Context

This MOSFET employs planar VDMOS technology optimized for high-voltage hard-switching applications. Its low C_iss (1205 pF) and ultra-low Q_gd/Q_g ratio (13/32 nC) minimize Miller-induced turn-off delay and improve controllability under high dV/dt conditions up to 70 V/ns.

The integrated body diode supports synchronous rectification and freewheeling in bridge topologies, with t_rr = 281 ns and Q_rr = 3.4 μC at T_J = 25 °C - enabling efficient operation in continuous conduction mode (CCM) PFC and resonant converters.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction to PCB copper; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H), lead (Pb)-free and halogen-free per Vishay specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP14NK60ZFP and IXTH14N60L2, SIHD14N60ET5-GE3 delivers superior switching efficiency due to lower Q_g and R_DS(on), better thermal performance in surface-mount layouts, and guaranteed avalanche capability - making it optimal for compact, high-reliability 100–200 W per switch applications.

Availability

SIHD14N60ET5-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHD14N60ET5-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.

The E Series Power MOSFETs, including SIHD14N60ET5-GE3, were engineered for high-voltage, high-frequency switching in server, telecom, and renewable energy power conversion systems where low conduction and switching losses are critical.

FAQ

What is the maximum continuous drain current rating for SIHD14N60ET5-GE3 at 100 °C case temperature?

The SIHD14N60ET5-GE3 has a continuous drain current rating of 8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 13 A rating at 25 °C and ensures safe operation within the SOA limits when mounted on a properly sized PCB copper area or heatsink. The SIHD14N60ET5-GE3 maintains this rating across its full operating junction temperature range of –55 °C to +150 °C.

Does SIHD14N60ET5-GE3 support logic-level gate drive?

No, SIHD14N60ET5-GE3 is not a logic-level MOSFET; its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. It requires a dedicated 10–15 V gate driver capable of delivering ≥1 A peak current to achieve specified switching performance. The SIHD14N60ET5-GE3 does not guarantee full enhancement below 5 V and is incompatible with 3.3 V microcontroller outputs without level-shifting circuitry.

What is the avalanche energy rating of SIHD14N60ET5-GE3 and how is it tested?

The SIHD14N60ET5-GE3 is rated for 136 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.1 A. This rating confirms ruggedness during unclamped inductive switching events such as transformer saturation or short-circuit faults. The SIHD14N60ET5-GE3 passes this test without parameter degradation, supporting reliable operation in PFC and flyback topologies without external clamps.

How does the thermal resistance of SIHD14N60ET5-GE3 compare to similar DPAK MOSFETs?

The SIHD14N60ET5-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 0.85 °C/W, measured from junction to the drain tab - among the lowest for 600 V DPAK devices. This outperforms typical competitors (e.g., 1.1–1.4 °C/W), enabling higher power dissipation in space-constrained layouts. When used with 100 mm² of 2 oz copper connected to the drain pad, the SIHD14N60ET5-GE3 achieves effective R_thJA ≈ 35 °C/W, allowing 13 A continuous operation at ambient ≤55 °C.

Is SIHD14N60ET5-GE3 suitable for use in synchronous rectification topologies?

The SIHD14N60ET5-GE3 is not recommended for synchronous rectification due to its relatively high body diode forward voltage (V_SD = 1.2 V at 7 A, 25 °C) and moderate reverse recovery characteristics (t_rr = 281 ns, Q_rr = 3.4 μC). For synchronous rectification, low-V_F Schottky or specialized trench-Si MOSFETs with faster diodes are preferred. The SIHD14N60ET5-GE3 is optimized for high-side switching, not low-side freewheeling, and its body diode is intended only for clamping and limited recovery duty.