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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD180N60E-GE3

Name: SIHD180N60E-GE3
Brand: Vishay Siliconix
SKU: SIHD180N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD180N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD180N60E-GE3.pdf

Description:: MOSFET N-CH 600V 19A TO252AA

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Product details

Overview

SIHD180N60E from Vishay Siliconix is a 600 V, 19 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring 0.170 Ω R_DS(on) at V_GS = 10 V, 32 nC total gate charge, and 88 mJ single-pulse avalanche energy - designed for high-efficiency switching in telecom and server power supplies.

For engineers reviewing the SIHD180N60E datasheet, SIHD180N60E pinout, SIHD180N60E application, or SIHD180N60E equivalent, this page delivers verified electrical specs, thermal performance data, body diode recovery characteristics, and real-world SMPS/PFC design context without generic marketing language.

Technical Context

This 4th-generation E-series MOSFET uses optimized planar VDMOS structure to achieve low figure-of-merit (R_DS(on) × Q_g = 5.4 Ω·nC), reduced effective output capacitance (C_o(er) = 39 pF), and controlled dv/dt capability (100 V/ns at T_J = 125 °C).

It integrates an intrinsic fast-recovery body diode with t_rr = 275 ns (typ.), Q_rr = 3.6 μC, and I_RRM = 23 A, enabling robust operation in hard-switched PFC and resonant topologies where diode commutation stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with 50 % voltage margin for transient spikes in telecom rectifiers.
R_DS(on) typ	0.170 Ω at V_GS = 10 V - enables <1.5 W conduction loss at 9.5 A continuous drain current.
Q_g max	32 nC - determines gate drive power requirement and switching speed in 100–300 kHz SMPS stages.
E_AS	88 mJ - ensures ruggedness against unclamped inductive switching events in motor drives and welders.
t_rr	275 ns typ - minimizes reverse recovery losses and EMI generation during diode turn-off in bridge configurations.
R_thJC	0.8 °C/W - allows 156 W power dissipation with ≤125 °C junction rise above 25 °C case temperature.
I_D cont	19 A at T_C = 25 °C - defines maximum continuous current under ideal heatsinking conditions.

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal enhancement; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H), lead (Pb)-free and halogen-free per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full enhancement; ±30 V absolute max rating.
D	Drain	Main high-side power terminal; electrically connected to exposed copper pad for low-inductance thermal path.
S	Source	Power return node; referenced to gate drive ground; carries full load current and body diode reverse recovery current.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	5.4 Ω·nC - reduces combined conduction and switching losses in high-frequency PFC stages.
Avalanche-rated	88 mJ single-pulse - eliminates need for external snubbers in inductive load switching applications.
Fast body diode	t_rr = 275 ns, Q_rr = 3.6 μC - lowers diode-induced voltage overshoot and EMI in half-bridge LLC converters.
Low C_o(er)	39 pF - improves light-load efficiency by reducing capacitive discharge loss during zero-voltage switching transitions.
High dv/dt immunity	100 V/ns at T_J = 125 °C - prevents false turn-on in high-noise industrial motor drive inverters.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) units with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, switching at 200 kHz with synchronous rectification on secondary. Use Value: 0.170 Ω R_DS(on) and 32 nC Q_g enable >95 % efficiency at full load while maintaining thermal margin below 105 °C junction.	Use Scenario: Boost PFC stage in -48 V telecom rectifier systems operating from 90–264 V AC input. IC Role / Device Role / Timing Role: Fast-switching boost switch managing 10 A RMS input current with critical conduction mode (CrCM) control. Use Value: Low C_o(er) (39 pF) and fast body diode (t_rr = 275 ns) reduce switching loss and improve THD performance across universal input range.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters converting 600–1000 V DC from photovoltaic arrays to 230 V AC grid. IC Role / Device Role / Timing Role: High-voltage IGBT replacement in three-level NPC topology for improved efficiency and reliability. Use Value: 600 V V_DS rating with 88 mJ E_AS withstands DC-link transients during grid fault conditions without failure.	Use Scenario: Inverter leg switching in 7.5 kW HVAC compressor drives using space-vector PWM at 8 kHz carrier frequency. IC Role / Device Role / Timing Role: Low-side switch in six-pack module configuration, conducting 19 A continuous with forced-air cooling. Use Value: R_thJC = 0.8 °C/W enables compact heatsink design while sustaining 150 °C max junction temperature under overload.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3 kW distributed power architecture (DPA) units with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, switching at 200 kHz with synchronous rectification on secondary.

Use Value: 0.170 Ω R_DS(on) and 32 nC Q_g enable >95 % efficiency at full load while maintaining thermal margin below 105 °C junction.

Use Scenario: Boost PFC stage in -48 V telecom rectifier systems operating from 90–264 V AC input.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 10 A RMS input current with critical conduction mode (CrCM) control.

Use Value: Low C_o(er) (39 pF) and fast body diode (t_rr = 275 ns) reduce switching loss and improve THD performance across universal input range.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters converting 600–1000 V DC from photovoltaic arrays to 230 V AC grid.

IC Role / Device Role / Timing Role: High-voltage IGBT replacement in three-level NPC topology for improved efficiency and reliability.

Use Value: 600 V V_DS rating with 88 mJ E_AS withstands DC-link transients during grid fault conditions without failure.

Use Scenario: Inverter leg switching in 7.5 kW HVAC compressor drives using space-vector PWM at 8 kHz carrier frequency.

IC Role / Device Role / Timing Role: Low-side switch in six-pack module configuration, conducting 19 A continuous with forced-air cooling.

Use Value: R_thJC = 0.8 °C/W enables compact heatsink design while sustaining 150 °C max junction temperature under overload.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N60DM6	600 V, 18 A, R_DS(on) = 0.19 Ω, Q_g = 35 nC, DPAK package	Higher R_DS(on) and Q_g increase conduction and gate drive losses; no specified E_AS rating	Acceptable for lower-power (<1.5 kW) PFC where thermal margin is relaxed.
IXTH18N60L2	600 V, 18 A, R_DS(on) = 0.22 Ω, Q_g = 28 nC, TO-247 package	Larger TO-247 footprint increases PCB area; higher R_DS(on) offsets lower Q_g benefit	Suitable when higher peak current capability (IDM = 72 A) and through-hole mounting are required.

Compared with STP18N60DM6 and IXTH18N60L2, SIHD180N60E delivers superior FOM (R_DS(on) × Q_g), certified avalanche ruggedness, and DPAK-compatible thermal performance - making it optimal for space-constrained, high-reliability 2–5 kW power conversion.

Availability

SIHD180N60E is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing facilities.

Supply support for SIHD180N60E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIHD180N60E belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in enterprise and industrial power conversion systems where low R_DS(on), fast switching, and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current rating for SIHD180N60E at 100 °C case temperature?

The SIHD180N60E has a maximum continuous drain current (I_D) of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and ensures safe operation within its 0.8 °C/W junction-to-case thermal resistance. The SIHD180N60E maintains stable R_DS(on) up to 150 °C junction temperature.

Does SIHD180N60E support logic-level gate drive?

No, SIHD180N60E is not a logic-level MOSFET. Its gate-source threshold voltage (V_GS(th)) ranges from 3.0 V to 5.0 V, and it is characterized for full enhancement at V_GS = 10 V. The SIHD180N60E requires a dedicated 10 V gate driver; operation below 8 V results in significantly increased R_DS(on) and conduction loss.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHD180N60E?

The SIHD180N60E body diode has a typical reverse recovery charge (Q_rr) of 3.6 μC under test conditions of T_J = 25 °C, I_F = 9.5 A, di/dt = 100 A/μs, and V_R = 25 V. This value is confirmed in the "Drain-Source Body Diode Characteristics" section and directly impacts switching loss and EMI in bridge configurations where the SIHD180N60E operates in synchronous rectification mode.

Is SIHD180N60E RoHS-compliant and halogen-free?

Yes, SIHD180N60E is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard (document 99912). The "-GE3" suffix explicitly denotes green, lead-free, and halogen-free construction per JEDEC J-STD-020 moisture sensitivity level 1 requirements.

What is the maximum allowable gate-source voltage for SIHD180N60E?

The absolute maximum gate-source voltage (V_GS) for SIHD180N60E is ±30 V, as stated in the Absolute Maximum Ratings table. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive circuits must limit transient overshoot and ensure steady-state V_GS remains within –20 V to +20 V during normal switching - the SIHD180N60E is rated for ±100 nA leakage at ±20 V and ±1 μA at ±30 V.

SIHD180N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 195mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1080 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

SIHD180N60E-GE3 FAQ

1.How can I place an order for SIHD180N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD180N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD180N60E-GE3 reliable?

The price and inventory of SIHD180N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD180N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD180N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD180N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD180N60E-GE3?

SIHD180N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD180N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD180N60E-GE3?

For technical support, including SIHD180N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD180N60E-GE3 requirements.

6.How does Aetrix verify that SIHD180N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD180N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD180N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD180N60E-GE3?

All SIHD180N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD180N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD180N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHD180N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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