Vishay Siliconix SIHD186N60EF-GE3

Overview

SIHD186N60EF from Vishay Siliconix is a 600 V, 19 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring 0.175 Ω R_DS(on) at V_GS = 10 V, 32 nC total gate charge, and fast body diode with 113 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency power conversion in PFC and SMPS stages.

For engineers reviewing the SIHD186N60EF datasheet, SIHD186N60EF pinout, SIHD186N60EF application, or SIHD186N60EF equivalent, this device is selected for high-voltage, medium-current hard-switched topologies requiring avalanche-rated ruggedness, low C_oss(er) (38 pF), and stable R_DS(on) over temperature in telecom/server power supplies.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series silicon technology optimized for reduced figure-of-merit (R_DS(on) × Q_g = 5.6 Ω·nC typ.) and low effective output capacitance. Its fast intrinsic body diode supports ZVS-capable designs and reduces snubber losses in resonant converters.

The device is rated for 68 mJ single-pulse unclamped inductive switching (UIS) at T_J = 25 °C and exhibits controlled dv/dt immunity (70 V/ns at T_J = 125 °C), enabling reliable operation in high-di/dt environments such as motor drives and welding inverters.

Key Specifications

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 and thermally coupled to PCB copper pour.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW48N60M2 and IXFH30N60P, SIHD186N60EF offers superior R_DS(on) × Q_g balance and verified fast diode behavior in a compact DPAK, making it optimal for space-constrained, medium-frequency (>100 kHz) power supplies where both efficiency and layout size matter.

Availability

SIHD186N60EF is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHD186N60EF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for industrial and computing markets.

The EF Series, including SIHD186N60EF, was designed specifically for high-voltage, medium-current switching in energy-efficient power conversion systems-targeting PFC, SMPS, and renewable energy inverters where low R_DS(on), fast body diode, and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for SIHD186N60EF at 100 °C case temperature?

The SIHD186N60EF has a continuous drain current rating of 12 A at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case resistance (0.8 °C/W) and ambient thermal constraints. Engineers must verify PCB copper area and heatsinking to sustain this current without exceeding the 150 °C maximum junction temperature. The SIHD186N60EF datasheet confirms this limit under steady-state conduction with proper thermal management.

Does SIHD186N60EF support logic-level gate drive?

No, SIHD186N60EF is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 3.0 V to 5.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Driving it reliably requires a minimum 10 V gate-source voltage to achieve the specified 0.175 Ω on-resistance. Using 5 V logic-level drive would result in significantly higher R_DS(on) and excessive conduction loss. The SIHD186N60EF must be paired with a gate driver capable of delivering ≥10 V with ≥2 A peak current.

What is the reverse recovery charge (Qrr) of the body diode in SIHD186N60EF, and why does it matter?

The SIHD186N60EF body diode has a typical reverse recovery charge (Qrr) of 0.6 μC, with a maximum of 1.2 μC, measured at T_J = 25 °C, I_F = 9.5 A, di/dt = 100 A/μs, and V_R = 400 V. Qrr directly impacts switching loss and EMI in bridge configurations-low Qrr minimizes tail current and associated power dissipation during commutation. For the SIHD186N60EF, this value enables clean turn-on in PFC and resonant topologies where the body diode conducts frequently.

Can SIHD186N60EF be used in avalanche mode, and what is its rated energy?

Yes, SIHD186N60EF is explicitly rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 68 mJ at T_J = 25 °C, V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 2.2 A. This rating confirms its ability to absorb inductive energy safely without failure, making it suitable for applications like motor drives and welders where transient overvoltage events occur. The SIHD186N60EF datasheet provides test conditions and limits for repeatable avalanche operation.

What is the thermal resistance from junction to case (RthJC) for SIHD186N60EF, and how does it affect heatsink design?

The SIHD186N60EF has a maximum junction-to-case thermal resistance (R_thJC) of 0.8 °C/W, enabling up to 156 W power dissipation at T_C = 25 °C before reaching the 150 °C maximum junction temperature. This low R_thJC requires direct thermal coupling of the exposed drain pad to a large copper area or heatsink-minimum recommended PCB copper is 2 oz with ≥4 cm² thermal pad. Proper thermal design ensures the SIHD186N60EF maintains reliability under sustained load in high-power applications.