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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD1K4N60E-GE3

Name: SIHD1K4N60E-GE3
Brand: Vishay Siliconix
SKU: SIHD1K4N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD1K4N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD1K4N60E-GE3.pdf

Description:: MOSFET N-CH 600V 4.2A TO252AA

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Product details

Overview

SIHD1K4N60E-GE3 from Vishay Siliconix is a 600 V, 4.2 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring 1.3 Ω R_DS(on) at V_GS = 10 V, 7.5 nC total gate charge, and 14 mJ single-pulse avalanche energy - deployed in telecom SMPS and PFC stages where high-voltage switching efficiency and ruggedness are critical.

For engineers reviewing the SIHD1K4N60E-GE3 datasheet, SIHD1K4N60E-GE3 pinout, SIHD1K4N60E-GE3 application, or SIHD1K4N60E-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values, body diode recovery metrics, and real-world use context for server power supply design, industrial motor drive half-bridges, and solar PV inverter DC-link switching.

Technical Context

This device implements Vishay's 4th-generation E-series trench-gate MOSFET architecture optimized for low FOM (R_DS(on) × Q_g = 9.75 Ω·nC), reduced C_oss(er) (12 pF), and enhanced dv/dt immunity (70 V/ns at T_J = 125 °C). It supports hard-switched topologies with unclamped inductive switching capability.

The integrated body diode exhibits 222 ns typical reverse recovery time (t_rr) and 0.8 μC Q_rr at I_F = 0.5 A, enabling reliable freewheeling in continuous conduction mode (CCM) PFC and flyback converters without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V DC bus designs with ≥50 % voltage margin for transient overvoltage handling in telecom rectifiers.
R_DS(on) typ	1.3 Ω @ V_GS = 10 V - Enables <1.3 W conduction loss at 3.2 A RMS in 100 kHz PFC boost stages.
Q_g max	7.5 nC - Reduces gate driver power demand and enables efficient operation with low-cost 1-A peak drivers.
E_AS	14 mJ - Guarantees robustness against inductive turn-off transients in motor drive H-bridge legs without external clamping.
R_thJC max	2.0 °C/W - Allows 63 W dissipation with ≤126 °C junction rise above 25 °C case temperature under forced-air cooling.
t_rr	222 ns typ - Limits diode recovery-induced voltage overshoot to <15 % of V_DS rating in synchronous rectifier configurations.
I_D cont @ T_C = 100 °C	2.6 A - Defines usable current envelope for thermally constrained PCB layouts with limited copper area.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad on bottom side for thermal enhancement; standard 3-pin configuration with G–D–S pin order (viewed from top, leads facing down).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; input capacitance C_iss = 172 pF enables fast turn-on with minimal Miller effect.
D (Drain)	High-side power output	Connected to exposed metal tab; electrically tied to internal die drain; requires thermal pad connection to PCB ground plane.
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	9.75 Ω·nC - Directly improves system efficiency in high-frequency (>100 kHz) switch-mode applications by minimizing combined switching + conduction losses.
Avalanche-rated (UIS)	14 mJ single-pulse - Eliminates need for external RCD clamp circuits in inductive load switching, reducing BOM count and layout complexity.
Reduced C_oss(er)	12 pF - Lowers stored output capacitance energy (E_oss), cutting turn-off losses in hard-switched topologies like LLC resonant converters.
Body diode t_rr & Q_rr	222 ns / 0.8 μC - Enables stable operation in synchronous rectification and bidirectional DC/DC without oscillation or shoot-through risk.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - Meets environmental compliance requirements for global industrial and telecom equipment shipments.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: High-efficiency active clamp forward converter in 1U server PSU delivering 1200 W at 12 V output. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 250 kHz with 600 V blocking requirement and tight thermal constraints. Use Value: 1.3 Ω R_DS(on) and 7.5 nC Q_g reduce total losses by 18 % vs. prior-gen 650 V MOSFETs, enabling >95 % efficiency at full load.	Use Scenario: Boost PFC stage in -48 V telecom rectifier handling 3 kW input with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Fast-switching boost switch requiring low Q_gd/Q_gs ratio and high dv/dt immunity to sustain reliability across line transients. Use Value: 3 nC Q_gd, 70 V/ns dv/dt rating, and 14 mJ E_AS ensure stable operation during 1 kV surge events per IEC 61000-4-5.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in string inverters converting up to 10 kW from 600–1000 V DC PV arrays. IC Role / Device Role / Timing Role: Half-bridge upper-leg switch subjected to repetitive 600 V bus voltage and high di/dt commutation stress. Use Value: 12 pF C_oss(er) and 222 ns t_rr minimize voltage spikes during zero-crossing transitions, reducing EMI filter size by 30 %.	Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC compressor drive operating at 16 kHz PWM frequency. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in cost-sensitive variable-frequency drives requiring low gate charge and high ruggedness. Use Value: 2.6 A continuous current at 100 °C case temperature and 14 mJ E_AS support 150 % overload for 60 s without derating.

Server Power Supply

Telecom Rectifier

Use Scenario: High-efficiency active clamp forward converter in 1U server PSU delivering 1200 W at 12 V output.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 250 kHz with 600 V blocking requirement and tight thermal constraints.

Use Value: 1.3 Ω R_DS(on) and 7.5 nC Q_g reduce total losses by 18 % vs. prior-gen 650 V MOSFETs, enabling >95 % efficiency at full load.

Use Scenario: Boost PFC stage in -48 V telecom rectifier handling 3 kW input with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Fast-switching boost switch requiring low Q_gd/Q_gs ratio and high dv/dt immunity to sustain reliability across line transients.

Use Value: 3 nC Q_gd, 70 V/ns dv/dt rating, and 14 mJ E_AS ensure stable operation during 1 kV surge events per IEC 61000-4-5.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in string inverters converting up to 10 kW from 600–1000 V DC PV arrays.

IC Role / Device Role / Timing Role: Half-bridge upper-leg switch subjected to repetitive 600 V bus voltage and high di/dt commutation stress.

Use Value: 12 pF C_oss(er) and 222 ns t_rr minimize voltage spikes during zero-crossing transitions, reducing EMI filter size by 30 %.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC compressor drive operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in cost-sensitive variable-frequency drives requiring low gate charge and high ruggedness.

Use Value: 2.6 A continuous current at 100 °C case temperature and 14 mJ E_AS support 150 % overload for 60 s without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK60ZFP	600 V, 10 A, R_DS(on) = 0.75 Ω, Q_g = 15 nC, TO-220FP package	Higher current rating but larger footprint and higher gate drive loss; lacks avalanche rating	Preferred when higher continuous current is required and board space allows through-hole mounting.
IXTH10N60L2	600 V, 10 A, R_DS(on) = 0.75 Ω, Q_g = 12.5 nC, TO-247 package	Superior thermal performance (R_thJC = 0.85 °C/W) but incompatible DPAK footprint and higher cost	Selected for high-power industrial inverters needing >100 W dissipation and active heatsink integration.

Compared with STP10NK60ZFP and IXTH10N60L2, SIHD1K4N60E-GE3 offers optimal balance of surface-mount compatibility, avalanche ruggedness, and low-Q_g efficiency for mid-power (<5 kW) applications where PCB real estate and thermal management are constrained.

Availability

SIHD1K4N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHD1K4N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHD1K4N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-voltage switching in server, telecom, and renewable energy systems where low FOM and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current for SIHD1K4N60E-GE3 at 100 °C case temperature?

The SIHD1K4N60E-GE3 supports 2.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 4.2 A rating at 25 °C and ensures safe operation within the 150 °C maximum junction temperature limit when mounted on a properly designed PCB thermal pad.

Does SIHD1K4N60E-GE3 have avalanche energy rating, and what is its value?

Yes, SIHD1K4N60E-GE3 is rated for single-pulse unclamped inductive switching (UIS) with an avalanche energy (E_AS) of 14 mJ, tested under V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1 A. This rating confirms its ability to withstand inductive turn-off transients without failure in motor drive and SMPS applications.

What is the gate threshold voltage range for SIHD1K4N60E-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHD1K4N60E-GE3 is specified from 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity in noisy industrial environments.

Is SIHD1K4N60E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHD1K4N60E-GE3 is lead (Pb)-free and halogen-free, qualified for peak reflow temperatures up to 260 °C for 10 seconds per JEDEC J-STD-020. Its DPAK package meets IPC/JEDEC standards for surface-mount assembly, including wetting balance and intermetallic formation requirements.

What is the typical reverse recovery time (t_rr) of the body diode in SIHD1K4N60E-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHD1K4N60E-GE3 is 222 ns, measured at T_J = 25 °C, I_F = I_S = 0.5 A, di/dt = 100 A/μs, and V_R = 25 V. This parameter supports stable freewheeling in CCM PFC and flyback converters without external diode supplementation.

SIHD1K4N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.45Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 172 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

SIHD1K4N60E-GE3 FAQ

1.How can I place an order for SIHD1K4N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD1K4N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD1K4N60E-GE3 reliable?

The price and inventory of SIHD1K4N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD1K4N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD1K4N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD1K4N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD1K4N60E-GE3?

SIHD1K4N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD1K4N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD1K4N60E-GE3?

For technical support, including SIHD1K4N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD1K4N60E-GE3 requirements.

6.How does Aetrix verify that SIHD1K4N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD1K4N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD1K4N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD1K4N60E-GE3?

All SIHD1K4N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD1K4N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD1K4N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHD1K4N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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