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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD240N60E-GE3

Name: SIHD240N60E-GE3
Brand: Vishay Siliconix
SKU: SIHD240N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD240N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD240N60E-GE3.pdf

Description:: MOSFET N-CH 600V 12A DPAK

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Product details

Overview

SIHD240N60E-GE3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring 0.208 Ω R_DS(on) at V_GS = 10 V, 23 nC total gate charge, and 81 mJ single-pulse avalanche energy rating - optimized for high-efficiency switching in PFC and SMPS stages of server and telecom power supplies.

For engineers reviewing the SIHD240N60E-GE3 datasheet, SIHD240N60E-GE3 pinout, SIHD240N60E-GE3 application, or SIHD240N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced C_oss(er) (32 pF), 100 V/ns dv/dt capability, and rated operation up to +150 °C junction temperature in industrial-grade power conversion designs.

Technical Context

This 4th-generation E-series MOSFET employs planar stripe cell architecture with optimized charge balance for reduced conduction and switching losses. Its low effective output capacitance (C_oss(er) = 32 pF) and fast reverse recovery (t_rr = 209 ns typ.) support high-frequency hard-switched topologies without excessive voltage overshoot.

The device integrates an intrinsic body diode rated for 12 A continuous source-drain current and 30 A pulsed current, with V_SD = 1.2 V at I_S = 5.5 A and T_J = 25 °C. Its ±30 V gate-source voltage rating and 3.0–5.0 V threshold enable robust drive margin in isolated gate driver circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient clamping in PFC and LLC resonant converters
R_DS(on) typ	0.208 Ω at V_GS = 10 V, I_D = 5.5 A - enables <1.3 W conduction loss at 5.5 A, critical for thermal management in compact 1U server PSUs
Q_g max	23 nC - determines gate driver power requirement and switching speed; compatible with standard 1–2 A peak gate drivers
E_AS	81 mJ - ensures reliable unclamped inductive switching in boost PFC stages without external snubbers
C_oss(er)	32 pF - reduces turn-off energy loss and improves light-load efficiency in high-frequency (>100 kHz) SMPS designs
T_J range	−55 °C to +150 °C - qualified for extended industrial ambient conditions and high-power density thermal environments
R_thJC	1.6 °C/W - enables direct heatsink mounting for >70 W power dissipation with minimal thermal interface resistance

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H); lead (Pb)-free and halogen-free per JEDEC J-STD-609.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; gate leakage <±100 nA at ±20 V ensures low standby current
Pin 2 (D)	Drain	Main high-side switching node; electrically connected to exposed copper pad for thermal and electrical grounding to heatsink
Pin 3 (S)	Source	Power return path and gate reference; tied to PCB ground plane; body diode anode connects internally to this terminal

Key Features

Feature	Design Value
4th-generation E-series technology	Optimized cell pitch and doping profile reduce R_DS(on) × Q_g FOM by >25 % vs. prior generation, improving system efficiency at 100–300 kHz
Avalanche-rated (UIS)	81 mJ single-pulse energy withstand enables robustness against inductive kickback in boost and flyback converters without derating
Low C_oss(er)	32 pF effective output capacitance minimizes turn-off loss and improves zero-voltage switching (ZVS) initiation in resonant topologies
High dv/dt immunity	100 V/ns rated slope prevents false turn-on during high-speed switching in noisy high-power environments
Body diode t_rr	209 ns typical reverse recovery time supports synchronous rectification replacement in medium-frequency PFC stages

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC converter operating at 65–100 kHz with 400 V DC output and 3 kW output power. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles full line-input current with 12 A RMS rating. Use Value: Low R_DS(on) (0.208 Ω) and low Q_g (15 nC typ.) reduce both conduction and switching losses, enabling >96 % PFC efficiency at full load.	Use Scenario: High-density 48 V telecom rectifier using interleaved dual-phase boost topology with 2.5 kW output. IC Role / Device Role / Timing Role: Primary switch in each phase; operated with 100 ns dead-time control and active clamp-assisted ZVS. Use Value: C_oss(er) = 32 pF and t_rr = 209 ns allow reliable soft-switching down to 50 % load, reducing EMI and thermal stress.
Solar PV Inverter DC-DC Stage	Industrial Motor Drive Inverter
Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V DC input to 400 V DC bus for inverter section. IC Role / Device Role / Timing Role: High-side switch in two-level or three-level NPC configuration; subjected to repetitive 600 V blocking and 10 A switching current. Use Value: 600 V V_DS rating with 150 °C T_J max and R_thJC = 1.6 °C/W supports operation in sealed outdoor enclosures without forced air cooling.	Use Scenario: 3-phase IGBT gate driver auxiliary supply and regenerative braking snubber circuit in 7.5 kW HVAC drives. IC Role / Device Role / Timing Role: Fast-switching clamp MOSFET in active snubber network; triggered synchronously with IGBT turn-off to absorb stored inductive energy. Use Value: 81 mJ E_AS rating and 30 A I_DM ensure single-event survivability during motor stall or short-circuit fault conditions.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC converter operating at 65–100 kHz with 400 V DC output and 3 kW output power.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost stage; handles full line-input current with 12 A RMS rating.

Use Value: Low R_DS(on) (0.208 Ω) and low Q_g (15 nC typ.) reduce both conduction and switching losses, enabling >96 % PFC efficiency at full load.

Use Scenario: High-density 48 V telecom rectifier using interleaved dual-phase boost topology with 2.5 kW output.

IC Role / Device Role / Timing Role: Primary switch in each phase; operated with 100 ns dead-time control and active clamp-assisted ZVS.

Use Value: C_oss(er) = 32 pF and t_rr = 209 ns allow reliable soft-switching down to 50 % load, reducing EMI and thermal stress.

Solar PV Inverter DC-DC Stage

Industrial Motor Drive Inverter

Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V DC input to 400 V DC bus for inverter section.

IC Role / Device Role / Timing Role: High-side switch in two-level or three-level NPC configuration; subjected to repetitive 600 V blocking and 10 A switching current.

Use Value: 600 V V_DS rating with 150 °C T_J max and R_thJC = 1.6 °C/W supports operation in sealed outdoor enclosures without forced air cooling.

Use Scenario: 3-phase IGBT gate driver auxiliary supply and regenerative braking snubber circuit in 7.5 kW HVAC drives.

IC Role / Device Role / Timing Role: Fast-switching clamp MOSFET in active snubber network; triggered synchronously with IGBT turn-off to absorb stored inductive energy.

Use Value: 81 mJ E_AS rating and 30 A I_DM ensure single-event survivability during motor stall or short-circuit fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK60Z	600 V, 20 A, R_DS(on) = 0.33 Ω, Q_g = 35 nC, TO-247 package	Higher current rating but larger footprint and higher gate charge; requires heavier gate driver	Preferred where higher peak current headroom is needed and board space allows TO-247 mounting
IXFH20N60P	600 V, 20 A, R_DS(on) = 0.30 Ω, Q_g = 42 nC, TO-247 package, no avalanche rating	No UIS rating; higher conduction and switching losses; incompatible with unclamped inductive loads	Only suitable in clamped or ZVS topologies where avalanche stress is absent

Compared with STW20NK60Z and IXFH20N60P, SIHD240N60E-GE3 delivers superior FOM (0.208 Ω × 23 nC = 4.78 Ω·nC), smaller DPAK footprint, and guaranteed avalanche ruggedness - making it optimal for space-constrained, high-reliability PFC and SMPS designs requiring consistent performance across temperature and load transients.

Availability

SIHD240N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for SIHD240N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and thermal robustness.

The SIHD240N60E-GE3 belongs to Vishay's E Series Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in server, telecom, and renewable energy power conversion systems where low R_DS(on), low Q_g, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SIHD240N60E-GE3 at 100 °C case temperature?

The SIHD240N60E-GE3 has a continuous drain current rating of 7 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied when designing for sustained operation in high-ambient environments such as enclosed telecom rectifiers or solar inverters.

Does SIHD240N60E-GE3 support logic-level gate drive?

No, SIHD240N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is 3.0–5.0 V, and it is characterized for full enhancement at V_GS = 10 V. It requires a dedicated 10–15 V gate driver supply - not 3.3 V or 5 V logic rails - to achieve its specified R_DS(on) of 0.208 Ω and ensure reliable switching in high-power applications.

What is the significance of the "-GE3" suffix in SIHD240N60E-GE3?

The "-GE3" suffix indicates that SIHD240N60E-GE3 is a lead (Pb)-free and halogen-free version compliant with RoHS Directive 2011/65/EU and Vishay's green initiative. It uses matte tin plating on the leads and meets JEDEC J-STD-609A Class 2a moisture sensitivity level (MSL-2a), requiring bake conditioning only if exposed to ambient >60 % RH for >12 hours before reflow.

Can SIHD240N60E-GE3 replace older Vishay SiHD240N60E variants in existing designs?

Yes, SIHD240N60E-GE3 is a direct replacement for earlier SiHD240N60E variants (e.g., SiHD240N60E-T1-GE3) with identical electrical specifications, thermal performance, and DPAK mechanical footprint. The "-GE3" suffix denotes the same green packaging standard used across the series, ensuring drop-in compatibility without layout or thermal redesign.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHD240N60E-GE3?

The typical reverse recovery charge (Q_rr) of the integral body diode in SIHD240N60E-GE3 is 2.1 μC, measured at T_J = 25 °C, I_F = 5.5 A, di/dt = 100 A/μs, and V_R = 25 V. This parameter directly impacts commutation loss in synchronous rectification and bidirectional topologies, and its low value supports efficient operation in high-frequency PFC and LLC converters.

SIHD240N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 240mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 783 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD240N60E-GE3 FAQ

1.How can I place an order for SIHD240N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD240N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD240N60E-GE3 reliable?

The price and inventory of SIHD240N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD240N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD240N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD240N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD240N60E-GE3?

SIHD240N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD240N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD240N60E-GE3?

For technical support, including SIHD240N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD240N60E-GE3 requirements.

6.How does Aetrix verify that SIHD240N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD240N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD240N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD240N60E-GE3?

All SIHD240N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD240N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD240N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHD240N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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