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Vishay Siliconix SIHD240N65E-GE3
- Part No.:
- SIHD240N65E-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHD240N65E-GE3.pdf
- Description:
- E SERIES POWER MOSFET 650 V (D-
- Quantity:
- Payment:
- Shipping:
Inventory:3,717
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Product details
Overview
SIHD240N65E-GE3 from Vishay Siliconix is a 650 V, 16 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring 0.208 Ω RDS(on) at VGS = 10 V, 29 nC total gate charge, and Kelvin-source connection for reduced gate noise-designed for high-efficiency PFC and SMPS stages in telecom and server power supplies.
For engineers reviewing the SIHD240N65E-GE3 datasheet, SIHD240N65E-GE3 pinout, SIHD240N65E-GE3 application, or SIHD240N65E-GE3 equivalent, key selection criteria include avalanche-rated UIS capability (36 mJ), low Co(er) of 42 pF, 100 V/ns dv/dt rating, and compatibility with high-frequency hard-switched topologies requiring minimized switching losses.
Technical Context
This E-series MOSFET employs 4th-generation superjunction technology optimized for high-voltage, medium-current applications. Its Kelvin-source configuration separates power and signal source terminals to suppress gate loop inductance and improve switching stability under fast di/dt conditions.
The device delivers low figure-of-merit (RDS(on) × Qg = 6.05 Ω·nC), effective output capacitance Co(er) of 42 pF at 0–400 V, and specified unclamped inductive switching (UIS) energy of 36 mJ-enabling robust operation in continuous conduction mode (CCM) PFC and resonant LLC primary-side switches.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V DC bus designs with ≥30 % voltage margin for transient overvoltage handling |
| RDS(on) typ | 0.208 Ω at VGS = 10 V, TJ = 25 °C - enables <1.0 W conduction loss at 7 A RMS in PFC boost stage |
| Qg max | 29 nC - determines gate drive power requirement and influences minimum practical switching frequency |
| EAS | 36 mJ - rated single-pulse avalanche energy ensures reliability during startup, overload, or short-circuit events |
| Coss typ | 40 pF - contributes to low turn-off energy loss and supports ZVS operation in resonant converters |
| TJ range | −55 °C to +150 °C - qualified for industrial and telecom environments with extended thermal cycling endurance |
| RthJC max | 0.6 °C/W - enables high-power dissipation (up to 147 W) with minimal junction-to-case temperature rise |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal enhancement; lead (Pb)-free and halogen-free per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source – Signal) | Kelvin source terminal | Provides dedicated low-inductance return path for gate driver reference, decoupling power source current from gate control loop |
| Pin 2 (Drain) | Main power drain terminal | Connected to exposed copper pad on bottom of package; primary heat transfer path to PCB thermal plane |
| Pin 3 (Gate) | Control input | Receives gate drive voltage (±30 V max); requires external series resistor (e.g., 9.1 Ω) to damp ringing per test circuit |
| Pin 4 (Source – Power) | Main power source terminal | Carries full load current; electrically isolated from Pin 1 but internally bonded to same silicon source region |
Key Features
| Feature | Design Value |
|---|---|
| 4th-generation E-series superjunction architecture | Optimized cell pitch and charge balance for simultaneous reduction of RDS(on) and Coss, enabling higher efficiency at 100–300 kHz switching |
| Kelvin-source connection | Eliminates source inductance impact on gate drive waveform integrity, improving switching consistency in high-di/dt PFC circuits |
| Low Co(er) (42 pF) | Reduces turn-off energy loss (Eoff ∝ VDS² × Co(er)) and supports soft-switching transitions in LLC and phase-shifted full-bridge topologies |
| Avalanche-rated (UIS) | Guarantees survivability during unclamped inductive switching events without derating, critical for PFC boost choke fault tolerance |
| dv/dt immunity | Rated 100 V/ns - prevents false turn-on during high-speed voltage transients in high-density power modules |
Applications
| Server Power Supply PFC Stage | Telecom Rectifier Module |
|---|---|
|
Use Scenario: Continuous conduction mode (CCM) boost converter operating at 100 kHz with 48 V–54 V output and 200–380 V AC input. IC Role / Device Role / Timing Role: Main switching device in active PFC front-end, conducting up to 16 A peak and blocking 650 V. Use Value: Low RDS(on) and Qg reduce both conduction and switching losses, achieving >98 % efficiency at full load while maintaining thermal margin. |
Use Scenario: High-density 3 kW telecom rectifier with dual-phase interleaved PFC and LLC DC/DC stage. IC Role / Device Role / Timing Role: Primary-side switch in interleaved PFC leg, synchronized to 100–150 kHz carrier with precise gate timing. Use Value: Kelvin-source layout minimizes gate oscillation during phase interleaving, ensuring stable zero-crossing detection and harmonic compliance. |
| Solar PV Inverter Boost Stage | Industrial Motor Drive Inverter |
|
Use Scenario: DC-DC boost converter stepping up PV array voltage (200–1000 V) to 700 V DC link for grid-tie inverter. IC Role / Device Role / Timing Role: High-voltage switch handling up to 10 A average current and 650 V blocking in non-isolated boost topology. Use Value: Avalanche rating (36 mJ) protects against inductive kickback during rapid MPPT voltage changes and partial shading transients. |
Use Scenario: 3-phase IGBT/MOSFET-based inverter driving 5–10 HP induction motor with regenerative braking. IC Role / Device Role / Timing Role: Upper-leg switch in 3-level NPC or 2-level inverter bridge, operating at 8–16 kHz PWM frequency. Use Value: Low Coss and high dv/dt immunity prevent shoot-through risk during high-speed commutation in compact motor control PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N65M5 | RDS(on) = 0.075 Ω (lower), Qg = 72 nC (higher), TO-247 package, no Kelvin source | Better conduction loss but higher gate drive loss; unsuitable for ultra-fast gate control loops due to lack of Kelvin configuration | Prefer when board space allows TO-247 and thermal design prioritizes conduction over switching loss |
| IXTH30N65X2 | RDS(on) = 0.135 Ω, Qg = 32 nC, TO-247, no Kelvin source, higher EAS (120 mJ) | Higher avalanche robustness but larger footprint and no gate noise suppression; slower turn-off due to higher Qgd | Choose for ruggedized industrial UPS where avalanche margin outweighs switching speed requirements |
Compared with STW48N65M5 and IXTH30N65X2, SIHD240N65E-GE3 uniquely balances low RDS(on), moderate Qg, Kelvin-source layout, and DPAK thermal performance-making it optimal for space-constrained, high-frequency PFC designs where gate noise and layout parasitics dominate reliability.
Availability
SIHD240N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply across multi-year production cycles.
Supply support for SIHD240N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The E Series Power MOSFET product line targets high-voltage, high-frequency power conversion systems-including PFC, SMPS, and renewable energy inverters-where low FOM and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current rating for SIHD240N65E-GE3 at 100 °C case temperature?
The SIHD240N65E-GE3 has a continuous drain current rating of 10 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 16 A rating at 25 °C and ensures safe operation within the 150 °C maximum junction temperature limit when mounted on a properly designed PCB thermal pad.
Does SIHD240N65E-GE3 support logic-level gate drive?
No, SIHD240N65E-GE3 is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 3.0 V to 5.0 V, and it is characterized for RDS(on) at VGS = 10 V. Reliable enhancement-mode operation requires ≥10 V gate drive; using 5 V logic signals will result in incomplete turn-on and excessive conduction loss.
How does the Kelvin-source configuration in SIHD240N65E-GE3 improve system performance?
The Kelvin-source configuration in SIHD240N65E-GE3 separates the gate driver's source reference (Pin 1) from the main power source path (Pin 4), eliminating shared source inductance that causes gate voltage undershoot/overshoot during high-di/dt switching. This improves timing accuracy and reduces electromagnetic interference in high-frequency PFC and resonant converters.
What is the typical reverse recovery charge (Qrr) of the body diode in SIHD240N65E-GE3?
The body diode of SIHD240N65E-GE3 has a typical reverse recovery charge (Qrr) of 2.7 μC, measured at TJ = 25 °C, IF = 7 A, di/dt = 100 A/μs, and VR = 25 V. This parameter directly impacts commutation loss in synchronous rectification and half-bridge configurations where the body diode conducts freewheeling current.
Is SIHD240N65E-GE3 suitable for use in zero-voltage switching (ZVS) topologies?
Yes, SIHD240N65E-GE3 is well-suited for ZVS topologies such as LLC resonant converters due to its low effective output capacitance Co(er) of 42 pF and low Coss of 40 pF. These parameters minimize energy stored in the output capacitance, reducing turn-on loss and enabling reliable soft switching across wide load and line ranges.
SIHD240N65E-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 240mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 960 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 147W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SIHD240N65E-GE3 FAQ
1.How can I place an order for SIHD240N65E-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHD240N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHD240N65E-GE3 reliable?
The price and inventory of SIHD240N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD240N65E-GE3 is usually 5 days.
3.What payment methods are accepted for SIHD240N65E-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD240N65E-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHD240N65E-GE3?
SIHD240N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHD240N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHD240N65E-GE3?
For technical support, including SIHD240N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD240N65E-GE3 requirements.
6.How does Aetrix verify that SIHD240N65E-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHD240N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD240N65E-GE3 meets industry standards.
7.What is the process for return or replacement of SIHD240N65E-GE3?
All SIHD240N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD240N65E-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHD240N65E-GE3 part is unused and in its original packaging.
Return procedure for SIHD240N65E-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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