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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD2N80AE-GE3

Name: SIHD2N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHD2N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD2N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD2N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 2.9A DPAK

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Product details

Overview

SIHD2N80AE-GE3 from Vishay Siliconix is an 800 V, 2.9 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 2.5 Ω @ V_GS = 10 V, Q_g = 7–10.5 nC, and avalanche-rated (E_AS = 14.1 mJ). It delivers low conduction and switching losses for high-voltage PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHD2N80AE-GE3 datasheet, SIHD2N80AE-GE3 pinout, SIHD2N80AE-GE3 application, or SIHD2N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS, ultra-low gate charge, integrated Zener ESD protection, and DPAK thermal performance (R_thJC = 2.0 °C/W) in high-reliability industrial power conversion.

Technical Context

This device uses a planar high-voltage silicon process optimized for rugged unclamped inductive switching (UIS), with a body diode rated for 2.9 A continuous source-drain current and 313–626 ns reverse recovery time. Its C_iss = 180 pF and C_oss = 10 pF support fast, low-loss hard-switching operation up to 640 V bus voltages.

The gate threshold voltage range (2.0–4.0 V) ensures stable turn-on under wide temperature and drive conditions, while the ±30 V V_GS rating enables robust gate drive design. Thermal resistance of 2.0 °C/W (junction-to-case) supports high-power density mounting on copper-clad PCBs or heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports 640 V DC bus designs with 25 % margin for transient overvoltage in PFC and offline SMPS.
R_DS(on) max	2.9 Ω @ V_GS = 10 V, T_J = 25 °C - Enables <1.2 W conduction loss at 0.5 A, suitable for medium-current HV switching.
Q_g max	10.5 nC - Reduces gate drive power and enables use with low-current drivers (e.g., 10 mA peak) in compact flyback/PFC controllers.
E_AS	14.1 mJ - Confirmed single-pulse avalanche energy allows safe operation during inductive turn-off transients without snubbers.
C_iss	180 pF - Low input capacitance minimizes Miller effect and improves switching speed stability across load and temperature.
R_thJC	2.0 °C/W - Enables direct heatsink mounting for >40 W dissipation at ΔT = 80 °C, critical for space-constrained server PSU modules.
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with standard 10 V gate drivers while avoiding false triggering from noise.

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; 3-pin surface-mount outline per Vishay document 71197 (Revision 03-Oct-2022), footprint compliant with Application Note 826 recommended pads.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or current-sense resistor; carries full load current (2.9 A continuous).
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate; requires <10.5 nC charge for full turn-on; sensitive to ESD (integrated Zener protection).
Pin 3 (Drain)	Power output (D)	Exposed metal tab (drain) - electrically and thermally connected to internal die; must be soldered to large copper area or heatsink.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	2.5 Ω × 10.5 nC = 26.25 Ω·nC - Balances conduction and switching loss for 65–100 kHz PFC operation.
Avalanche energy rating	E_AS = 14.1 mJ - Eliminates need for external clamping in inductive load switching (e.g., PFC boost chokes).
Integrated Zener ESD protection	±30 V V_GS rating with on-chip Zener - Prevents gate oxide damage during board handling and assembly without external TVS.
Ultra-low Q_gd/Q_g ratio	2 nC / 10.5 nC ≈ 19 % - Minimizes Miller plateau duration, improving dV/dt immunity and reducing switching instability.
Body diode with low Q_rr	Q_rr = 0.7–1.4 μC - Reduces diode recovery loss and EMI in synchronous rectification and freewheeling paths.

Applications

Server Power Supply PFC Stage	Telecom Rectifier Module
Use Scenario: Boost PFC converter operating at 640 V DC bus, 65 kHz switching frequency, with 2.5 A average input current. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost topology; handles full AC line rectified current with minimal conduction loss. Use Value: 2.5 Ω R_DS(on) limits I²R loss to <1.6 W at 2.5 A, while 10.5 nC Q_g enables efficient gate driving with UCC28070 controller.	Use Scenario: Front-end AC/DC conversion in 48 V telecom rectifier, requiring high reliability under 85–265 VAC input and 100 °C ambient. IC Role / Device Role / Timing Role: Primary-side HV switch in LLC resonant half-bridge; withstands 800 V blocking and conducts 2.9 A pulsed current. Use Value: 14.1 mJ E_AS rating ensures robustness against transformer leakage inductance spikes without snubber circuits.
Solar PV Inverter DC Link	Industrial Battery Charger
Use Scenario: DC link switching in string-level PV inverter with 1000 V system voltage and 2.2 A RMS current. IC Role / Device Role / Timing Role: High-voltage isolation switch between PV array and MPPT stage; operates in hard-switched buck or boost configuration. Use Value: 800 V V_DS provides 20 % safety margin above 1000 V system max, while 2.0 °C/W R_thJC enables direct heatsink mounting in sealed enclosures.	Use Scenario: Isolated DC/DC stage in 400 V battery charger for EV infrastructure, operating at 100 kHz with 2.7 A output current. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side clamp switch in active clamp forward topology. Use Value: Low Q_gd (2 nC) reduces cross-conduction risk in phase-shifted control, and integrated Zener protects gate during hot-plug events.

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Boost PFC converter operating at 640 V DC bus, 65 kHz switching frequency, with 2.5 A average input current.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost topology; handles full AC line rectified current with minimal conduction loss.

Use Value: 2.5 Ω R_DS(on) limits I²R loss to <1.6 W at 2.5 A, while 10.5 nC Q_g enables efficient gate driving with UCC28070 controller.

Use Scenario: Front-end AC/DC conversion in 48 V telecom rectifier, requiring high reliability under 85–265 VAC input and 100 °C ambient.

IC Role / Device Role / Timing Role: Primary-side HV switch in LLC resonant half-bridge; withstands 800 V blocking and conducts 2.9 A pulsed current.

Use Value: 14.1 mJ E_AS rating ensures robustness against transformer leakage inductance spikes without snubber circuits.

Solar PV Inverter DC Link

Industrial Battery Charger

Use Scenario: DC link switching in string-level PV inverter with 1000 V system voltage and 2.2 A RMS current.

IC Role / Device Role / Timing Role: High-voltage isolation switch between PV array and MPPT stage; operates in hard-switched buck or boost configuration.

Use Value: 800 V V_DS provides 20 % safety margin above 1000 V system max, while 2.0 °C/W R_thJC enables direct heatsink mounting in sealed enclosures.

Use Scenario: Isolated DC/DC stage in 400 V battery charger for EV infrastructure, operating at 100 kHz with 2.7 A output current.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side clamp switch in active clamp forward topology.

Use Value: Low Q_gd (2 nC) reduces cross-conduction risk in phase-shifted control, and integrated Zener protects gate during hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2N80FL	R_DS(on) = 3.0 Ω (typ), Q_g = 12 nC, same 800 V rating, TO-220 package	Larger thermal resistance (R_thJC = 3.5 °C/W); requires mechanical mounting and larger heatsink	Prefer SIHD2N80AE-GE3 for surface-mount, space-constrained designs; STP2N80FL suits through-hole prototyping or lower-frequency (<50 kHz) applications.
IXTP2N80P	R_DS(on) = 2.8 Ω (max), Q_g = 9.5 nC, TO-220FP package, no integrated Zener	No built-in gate ESD protection; higher C_oss (14 pF) increases switching loss at high dv/dt	SIHD2N80AE-GE3 offers superior gate robustness and lower effective capacitance for high-noise telecom environments.

Compared with STP2N80FL and IXTP2N80P, SIHD2N80AE-GE3 delivers better thermal performance in SMT form factor, lower gate charge for high-frequency PFC, and integrated Zener protection-making it optimal for compact, high-reliability server and telecom power modules where layout area and ESD resilience are critical.

Availability

SIHD2N80AE-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply, lead-free compliance, and long-term industrial lifecycle support.

Supply support for SIHD2N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHD2N80AE-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage, medium-current switching in energy-efficient AC/DC and DC/DC converters targeting telecom, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHD2N80AE-GE3 at 100 °C case temperature?

The SIHD2N80AE-GE3 has a continuous drain current rating of 1.8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and ensures safe operation within its 62.5 W maximum power dissipation limit when properly heatsinked.

Does SIHD2N80AE-GE3 include integrated ESD protection on the gate?

Yes, SIHD2N80AE-GE3 features an integrated Zener diode for gate-source ESD protection, supporting ±30 V gate-source voltage rating. This eliminates the need for external gate protection components in most applications and enhances robustness during PCB assembly and field operation.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHD2N80AE-GE3?

The SIHD2N80AE-GE3 body diode has a reverse recovery charge (Q_rr) of 0.7–1.4 μC, measured at T_J = 25 °C, I_F = 1 A, di/dt = 100 A/μs, and V_R = 25 V. This low Q_rr contributes to reduced switching loss and EMI in freewheeling and synchronous rectification applications.

Can SIHD2N80AE-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHD2N80AE-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 14.1 mJ, tested under V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 1 A. This rating validates its use in circuits with significant leakage inductance without external clamping.

What is the gate-source threshold voltage range for SIHD2N80AE-GE3, and how does it affect drive requirements?

The SIHD2N80AE-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0–4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity-no special logic-level drive is needed, and gate drive circuits can use simple resistive or transformer-coupled topologies.

SIHD2N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 2.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.9Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD2N80AE-GE3 FAQ

1.How can I place an order for SIHD2N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD2N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD2N80AE-GE3 reliable?

The price and inventory of SIHD2N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD2N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD2N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD2N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD2N80AE-GE3?

SIHD2N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD2N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD2N80AE-GE3?

For technical support, including SIHD2N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD2N80AE-GE3 requirements.

6.How does Aetrix verify that SIHD2N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD2N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD2N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD2N80AE-GE3?

All SIHD2N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD2N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD2N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHD2N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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