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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD3N50D-BE3

Name: SIHD3N50D-BE3
Brand: Vishay Siliconix
SKU: SIHD3N50D-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD3N50D-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD3N50D-BE3.pdf

Description:: MOSFET N-CH 500V 3A DPAK

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Product details

Overview

SIHD3N50D-BE3 from Vishay Siliconix is a 500 V, 3.2 Ω (max), N-channel DPAK (TO-252) Power MOSFET optimized for high-voltage switching in offline SMPS, server power supplies, and induction heating. It delivers 3.0 A continuous drain current at TC = 25 °C, features 12 nC total gate charge, and supports unclamped inductive switching with 10.4 mJ avalanche energy rating.

For engineers reviewing the SIHD3N50D-BE3 datasheet, SIHD3N50D-BE3 pinout, SIHD3N50D-BE3 application, or SIHD3N50D-BE3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (≈38.4 Ω·nC), robust body diode (t_rr = 293 ns, Q_rr = 0.74 μC), and thermal resistance of 1.8 °C/W (junction-to-case), critical for thermally constrained industrial and telecom power designs.

Technical Context

This device employs a planar vertical DMOS structure with optimized cell pitch and trench-free gate design to achieve low area-specific on-resistance and reduced input capacitance (C_iss = 175 pF). Its gate threshold voltage (3–5 V) ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity.

The integrated body diode is rated for repetitive 3 A continuous source-drain current and exhibits controlled reverse recovery (dV/dt = 0.22 V/ns) under hard-switching conditions. Avalanche ruggedness is validated per UIS testing (E_AS = 10.4 mJ), enabling operation in inductive load circuits without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - Supports 400 V DC bus designs with 25 % safety margin for surge transients
R_DS(on) max @ 10 V	3.2 Ω - Enables <10 W conduction loss at 1.5 A, suitable for medium-power SMPS
Q_g max	12 nC - Low gate drive power requirement; compatible with low-current gate drivers (e.g., 1 A peak)
E_AS	10.4 mJ - Confirmed single-pulse avalanche capability eliminates need for external clamping in flyback/LLC snubberless topologies
t_rr	293 ns - Fast body diode recovery reduces switching losses and EMI in synchronous rectification and half-bridge configurations
R_thJC	1.8 °C/W - Enables direct heatsink mounting for >50 W dissipation without thermal derating in compact enclosures
I_D cont @ T_C = 25 °C	3.0 A - Sustains full-rated output in TO-252 footprint without forced air cooling

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal enhancement and mechanical stability. Standard 3-pin surface-mount outline: Drain (tab), Source (pin 1), Gate (pin 2); no leadframe plating restrictions beyond Pb-free/halogen-free compliance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side power terminal	Electrically and thermally connected to PCB copper pour; requires ≥10 mm² thermal pad for R_thJC optimization
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection essential for stable switching; ties directly to power ground plane
Gate (Pin 2)	Control input for channel modulation	High-impedance node; requires <100 pF routing capacitance and series gate resistor (9.1 Ω typical) to damp ringing

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	38.4 Ω·nC - Reduces combined conduction + switching losses by >15 % vs. legacy 500 V MOSFETs in 100–300 kHz converters
Avalanche-rated (UIS)	10.4 mJ - Eliminates need for external RCD clamp in offline flyback transformers operating up to 65 kHz
Fast body diode recovery	t_rr = 293 ns, Q_rr = 0.74 μC - Minimizes cross-conduction loss in synchronous buck and LLC resonant converters
High dV/dt immunity	24 V/ns @ T_J = 125 °C - Resists false turn-on during high-speed switching in noisy industrial environments
Pb-free and halogen-free	Compliant with JEDEC J-STD-609A Class 2a - Meets RoHS 2011/65/EU and IPC-1752A material declaration requirements

Applications

Server Power Supply	Induction Heating Inverter
Use Scenario: Primary-side switch in 80+ Gold-certified 500 W ATX PSUs using active-clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus with 100–200 kHz PWM duty cycling. Use Value: Low C_iss (175 pF) and fast t_r/t_f (9–18 ns) reduce dead-time losses and improve efficiency above 92 % at full load.	Use Scenario: Half-bridge leg in 2.5 kW domestic induction cooktop operating at 20–50 kHz. IC Role / Device Role / Timing Role: Hard-switched power switch driving resonant tank with bidirectional body diode conduction. Use Value: Robust 10.4 mJ UIS rating withstands repeated inductive kickback during zero-crossing commutation without failure.
Industrial Welding PSU	Plasma Display Power Module
Use Scenario: Output stage switch in IGBT-gated arc-welding inverters requiring high peak current pulse handling. IC Role / Device Role / Timing Role: Medium-voltage switch controlling 300–450 V DC link feeding transformer-coupled output stage. Use Value: 5.5 A pulsed drain current (I_DM) and 150 °C T_J rating support 300 ms intermittent overloads without thermal shutdown.	Use Scenario: Sustain driver in AC plasma display panel (PDP) power supply generating 200–300 V sustain pulses. IC Role / Device Role / Timing Role: High-repetition-rate (100–200 kHz), low-duty-cycle switch for X/Y electrode sustain waveform generation. Use Value: Low Q_gd/Q_g ratio (3/12 nC) ensures clean Miller plateau transition and precise pulse edge control.

Server Power Supply

Induction Heating Inverter

Use Scenario: Primary-side switch in 80+ Gold-certified 500 W ATX PSUs using active-clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus with 100–200 kHz PWM duty cycling.

Use Value: Low C_iss (175 pF) and fast t_r/t_f (9–18 ns) reduce dead-time losses and improve efficiency above 92 % at full load.

Use Scenario: Half-bridge leg in 2.5 kW domestic induction cooktop operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Hard-switched power switch driving resonant tank with bidirectional body diode conduction.

Use Value: Robust 10.4 mJ UIS rating withstands repeated inductive kickback during zero-crossing commutation without failure.

Industrial Welding PSU

Plasma Display Power Module

Use Scenario: Output stage switch in IGBT-gated arc-welding inverters requiring high peak current pulse handling.

IC Role / Device Role / Timing Role: Medium-voltage switch controlling 300–450 V DC link feeding transformer-coupled output stage.

Use Value: 5.5 A pulsed drain current (I_DM) and 150 °C T_J rating support 300 ms intermittent overloads without thermal shutdown.

Use Scenario: Sustain driver in AC plasma display panel (PDP) power supply generating 200–300 V sustain pulses.

IC Role / Device Role / Timing Role: High-repetition-rate (100–200 kHz), low-duty-cycle switch for X/Y electrode sustain waveform generation.

Use Value: Low Q_gd/Q_g ratio (3/12 nC) ensures clean Miller plateau transition and precise pulse edge control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK50ZFP	R_DS(on) = 4.5 Ω (max), Q_g = 14 nC, TO-220FP package	Higher conduction loss and larger footprint; lacks avalanche rating	Acceptable where cost is primary constraint and avalanche stress is absent
IXTP3N50D	R_DS(on) = 3.0 Ω (max), Q_g = 10 nC, TO-220 package	Lower R_DS(on) but higher thermal resistance (R_thJC = 2.5 °C/W); no halogen-free option	Better for lower-loss discrete designs with heatsink access; not drop-in for DPAK layout

Compared with STP3NK50ZFP and IXTP3N50D, SIHD3N50D-BE3 offers superior thermal performance in surface-mount form factor, verified avalanche ruggedness, and full RoHS compliance-making it optimal for space-constrained, high-reliability industrial power modules where layout density and transient robustness are critical.

Availability

SIHD3N50D-BE3 is available at Aetrix Electronics and suitable for server power supplies, induction heating inverters, and industrial welding systems requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for SIHD3N50D-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.

The D Series Power MOSFETs-including SIHD3N50D-BE3-are engineered for high-voltage, medium-current switching in offline power conversion, targeting efficiency-critical industrial, telecom, and consumer power systems.

FAQ

What is the maximum junction temperature rating for SIHD3N50D-BE3?

The SIHD3N50D-BE3 has an operating junction temperature range of –55 °C to +150 °C. This 150 °C maximum allows sustained operation in high-ambient environments such as enclosed server PSUs or sealed induction heating cabinets without derating below rated current at TC ≤ 100 °C. The device's thermal design must maintain TJ ≤ 150 °C under worst-case load and ambient conditions.

Does SIHD3N50D-BE3 support logic-level gate drive?

No, SIHD3N50D-BE3 is not a logic-level MOSFET. Its gate threshold voltage is specified from 3 V to 5 V, and full enhancement requires V_GS = 10 V to achieve R_DS(on) ≤ 3.2 Ω. Driving SIHD3N50D-BE3 with only 3.3 V or 5 V will result in high on-resistance and excessive conduction loss; a dedicated 10 V gate driver is required for optimal performance.

Can SIHD3N50D-BE3 replace older SiHD3N50D-E3 in existing designs?

Yes, SIHD3N50D-BE3 is a direct replacement for SIHD3N50D-E3, sharing identical electrical specifications, DPAK (TO-252) package dimensions, pinout, and thermal characteristics. The "BE3" suffix denotes enhanced Pb-free/halogen-free compliance per JEDEC J-STD-609A Class 2a, with no functional or layout impact on SIHD3N50D-BE3 integration.

What is the body diode reverse recovery charge (Q_rr) of SIHD3N50D-BE3?

The SIHD3N50D-BE3 body diode has a reverse recovery charge (Q_rr) of 0.74 μC, measured at T_J = 25 °C, I_F = I_S = 1.5 A, dI/dt = 100 A/μs, and V_R = 20 V. This low Q_rr value minimizes switching loss and EMI when the body diode conducts during dead time in bridge configurations, making SIHD3N50D-BE3 well-suited for synchronous rectification and resonant topologies.

Is SIHD3N50D-BE3 suitable for use in automotive applications?

SIHD3N50D-BE3 is not AEC-Q101 qualified and is not recommended for automotive powertrain or safety-critical systems. While its 150 °C T_J rating and avalanche capability meet some environmental demands, Vishay does not specify automotive-grade screening, PPAP documentation, or extended temperature validation for SIHD3N50D-BE3. For automotive applications, consult Vishay's AQ-series MOSFETs instead.

SIHD3N50D-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: D

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 175 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD3N50D-BE3 FAQ

1.How can I place an order for SIHD3N50D-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD3N50D-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD3N50D-BE3 reliable?

The price and inventory of SIHD3N50D-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD3N50D-BE3 is usually 5 days.

3.What payment methods are accepted for SIHD3N50D-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD3N50D-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD3N50D-BE3?

SIHD3N50D-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD3N50D-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD3N50D-BE3?

For technical support, including SIHD3N50D-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD3N50D-BE3 requirements.

6.How does Aetrix verify that SIHD3N50D-BE3 is sourced from the original manufacturer or authorized distributors?

All SIHD3N50D-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD3N50D-BE3 meets industry standards.

7.What is the process for return or replacement of SIHD3N50D-BE3?

All SIHD3N50D-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD3N50D-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD3N50D-BE3 part is unused and in its original packaging.

Return procedure for SIHD3N50D-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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