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Vishay Siliconix SIHD3N50D-E3
- Part No.:
- SIHD3N50D-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHD3N50D-E3.pdf
- Description:
- MOSFET N-CH 500V 3A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,781
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Product details
Overview
SIHD3N50D-E3 from Vishay Siliconix is a 500 V, 3.2 Ω (max), N-channel DPAK-packaged power MOSFET optimized for high-voltage switching in offline SMPS, server power supplies, and induction heating circuits. It delivers 3.0 A continuous drain current at TC = 25 °C, features 12 nC total gate charge, and is rated for 10.4 mJ single-pulse avalanche energy.
For engineers reviewing the SIHD3N50D-E3 datasheet, SIHD3N50D-E3 pinout, SIHD3N50D-E3 application, or SIHD3N50D-E3 equivalent, this device is selected for cost-sensitive, medium-power, high-voltage DC-DC and AC-DC conversion where low Ciss (175 pF), fast switching (tr = 9–18 ns), and rugged body diode performance are critical design requirements.
Technical Context
This MOSFET employs a planar vertical DMOS structure with optimized cell pitch and gate oxide thickness to achieve low RDS(on) × Qg figure-of-merit (FOM) of ≤38.4 Ω·nC. Its 500 V VDS rating and ±30 V VGS tolerance support operation across universal input AC-DC front-ends and industrial DC bus interfaces.
The device integrates a robust intrinsic body diode with 293 ns reverse recovery time (trr) and 0.74 μC Qrr, enabling reliable freewheeling in hard-switched topologies. Thermal resistance RthJC = 1.8 °C/W ensures efficient heat transfer to PCB copper when mounted on ≥1 in² thermal pad per Vishay's recommended DPAK footprint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 500 V - supports 400 V DC bus designs with 25 % margin for voltage transients |
| RDS(on) max @ 10 V | 3.2 Ω - enables <3 W conduction loss at 1.5 A continuous drain current |
| Qg max | 12 nC - allows fast turn-on with low gate drive power (<120 μW at 10 kHz) |
| EAS | 10.4 mJ - withstands unclamped inductive switching events without failure |
| Ciss | 175 pF - reduces Miller-induced oscillation risk and eases gate driver selection |
| tr/tf | 9–18 ns / 13–26 ns - supports >500 kHz switching in resonant and hard-switched converters |
| VSD max | 1.2 V @ IS = 1.5 A - limits forward conduction loss during synchronous rectification or freewheeling |
Pinout & Package
DPAK (TO-252) package with exposed drain tab for thermal and electrical connection to PCB ground plane. Standard 3-lead surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H), compliant with IPC-7351B density level B footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 0–10 V logic-level gate drive; 2 nC Qgs enables rapid threshold crossing |
| D (Drain) | High-side power terminal | Connected to exposed copper tab; carries full load current and dissipates heat directly to PCB |
| S (Source) | Reference node | Common return path for gate drive and load current; defines local ground reference for driver IC |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | ≤38.4 Ω·nC - improves efficiency in high-frequency switch-mode applications by balancing conduction and switching losses |
| Avalanche-rated (UIS) | 10.4 mJ single-pulse - eliminates need for external snubbers in inductive load switching |
| High body diode ruggedness | 12 A pulsed ISM, trr = 293 ns - sustains repetitive reverse recovery stress in flyback and LLC freewheeling paths |
| Low Ciss and Crss | 175 pF / 5 pF - minimizes Miller effect, enabling stable operation with standard gate drivers |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - suitable for consumer and industrial end-equipment |
Applications
| Server Power Supply | Induction Heating Inverter |
|---|---|
|
Use Scenario: Primary-side switching in 500–1000 W telecom rectifiers using active clamp forward or LLC topology. IC Role / Device Role / Timing Role: High-voltage primary switch handling 400 V DC bus with 100–300 kHz switching frequency. Use Value: 500 V rating and 10.4 mJ EAS ensure reliability under line surges and transformer leakage inductance spikes. |
Use Scenario: Half-bridge leg in 2–5 kW domestic induction cooktops operating at 20–50 kHz. IC Role / Device Role / Timing Role: Fast-switching power switch driving series-resonant tank with high di/dt (>100 A/μs). Use Value: 293 ns trr and 0.74 μC Qrr reduce body diode switching loss and prevent shoot-through during commutation. |
| Industrial Welding PSU | Motor Drive Inverter Stage |
|
Use Scenario: Output stage in IGBT-gated arc welding inverters requiring high peak current capability. IC Role / Device Role / Timing Role: Medium-power switching element in DC link chopper or auxiliary supply regulation. Use Value: 5.5 A pulsed IDM and 1.8 °C/W RthJC support short-duration high-current bursts without thermal runaway. |
Use Scenario: Low-side switch in 1–3 kW BLDC motor drives for HVAC blowers or pump controllers. IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current sink in three-phase inverter half-bridge. Use Value: 1.2 V VSD and 3 A continuous IS enable efficient freewheeling with minimal conduction loss during PWM dead-time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3NK50ZFP | 500 V, 4.5 Ω RDS(on), 16 nC Qg, TO-220FP package | Higher RDS(on) and Qg; requires heatsink due to through-hole package | Preferred where higher surge current rating (8 A IDM) and legacy through-hole assembly are required |
| IRFBC40APBF | 500 V, 2.2 Ω RDS(on), 24 nC Qg, TO-220 package | Lower RDS(on) but significantly higher Qg; no avalanche rating specified | Selected when lower conduction loss dominates over switching loss and avalanche immunity is not mandated |
Compared with STP3NK50ZFP and IRFBC40APBF, SIHD3N50D-E3 offers superior FOM (38.4 vs. 72 and 105.6 Ω·nC), DPAK surface-mount compatibility, and guaranteed UIS ruggedness-making it optimal for space-constrained, high-reliability industrial power stages.
Availability
SIHD3N50D-E3 is available at Aetrix Electronics and suitable for server power supplies, induction heating systems, and industrial welding equipment requiring stable component supply and long-term manufacturing continuity.
Supply support for SIHD3N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and thermally optimized devices.
The D Series power MOSFETs-including SIHD3N50D-E3-are engineered for high-voltage, medium-current switching in industrial and computing power supplies where low FOM, avalanche robustness, and surface-mount thermal performance are essential.
FAQ
What is the maximum continuous drain current rating for SIHD3N50D-E3 at 100 °C case temperature?
The SIHD3N50D-E3 supports 1.9 A continuous drain current at TC = 100 °C, derating linearly from 3.0 A at 25 °C using a factor of 0.56 W/°C. This reflects its thermal limit under sustained conduction, not transient capability. Designers must verify PCB copper area and airflow to maintain TC ≤ 100 °C for reliable operation.
Does SIHD3N50D-E3 have a specified avalanche energy rating, and how is it tested?
Yes, SIHD3N50D-E3 is rated for 10.4 mJ single-pulse unclamped inductive switching (UIS) energy at TJ = 25 °C, tested per JEDEC standard JESD24-1 with L = 2.3 mH, Rg = 25 Ω, and IAS = 3 A. This rating confirms its ability to absorb inductive energy without failure during abnormal switching events.
What is the gate threshold voltage range for SIHD3N50D-E3, and how does it affect drive circuit design?
The SIHD3N50D-E3 has a VGS(th) range of 3–5 V at ID = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while avoiding unintended conduction from noise. A 10 V gate drive is recommended to fully enhance the channel and minimize RDS(on).
Can SIHD3N50D-E3 be used in synchronous rectification applications?
Yes, SIHD3N50D-E3 supports synchronous rectification via its integral body diode, which exhibits VSD = 1.2 V at IS = 1.5 A and trr = 293 ns. Its low Qrr (0.74 μC) and high ISM (12 A) make it suitable for low-duty-cycle freewheeling in flyback and forward converters where external Schottky replacement is impractical.
What thermal resistance values apply to SIHD3N50D-E3, and how do they impact PCB layout?
SIHD3N50D-E3 has RthJC = 1.8 °C/W (junction-to-case) and RthJA = 62 °C/W (junction-to-ambient). To achieve the rated 69 W power dissipation, the PCB must provide ≥1 in² of 2-oz copper connected to the drain tab per Vishay Application Note 826. Insufficient copper increases TJ and risks thermal runaway.
SIHD3N50D-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.2Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 175 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 69W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SIHD3N50D-E3 FAQ
1.How can I place an order for SIHD3N50D-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHD3N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHD3N50D-E3 reliable?
The price and inventory of SIHD3N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD3N50D-E3 is usually 5 days.
3.What payment methods are accepted for SIHD3N50D-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD3N50D-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHD3N50D-E3?
SIHD3N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHD3N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHD3N50D-E3?
For technical support, including SIHD3N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD3N50D-E3 requirements.
6.How does Aetrix verify that SIHD3N50D-E3 is sourced from the original manufacturer or authorized distributors?
All SIHD3N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD3N50D-E3 meets industry standards.
7.What is the process for return or replacement of SIHD3N50D-E3?
All SIHD3N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD3N50D-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHD3N50D-E3 part is unused and in its original packaging.
Return procedure for SIHD3N50D-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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