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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD3N50D-GE3

Name: SIHD3N50D-GE3
Brand: Vishay Siliconix
SKU: SIHD3N50D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD3N50D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD3N50D-GE3.pdf

Description:: MOSFET N-CH 500V 3A TO252AA

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Inventory:2,980

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Product details

Overview

SIHD3N50D-GE3 from Vishay Siliconix is a 500 V, 3.0 A N-channel DPAK (TO-252) power MOSFET optimized for high-voltage switching in offline SMPS, industrial motor drives, and welding equipment. It delivers R_DS(on) ≤ 3.2 Ω at V_GS = 10 V, Q_g ≤ 12 nC, and avalanche-rated E_AS = 10.4 mJ - enabling efficient, rugged operation in repetitive inductive switching.

For engineers reviewing the SIHD3N50D-GE3 datasheet, SIHD3N50D-GE3 pinout, SIHD3N50D-GE3 application, or SIHD3N50D-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), fast 24 ns turn-off delay, 1.2 V body diode forward voltage at 1.5 A, and DPAK thermal resistance of R_thJC = 1.8 °C/W - all critical for thermally constrained, high-reliability power stages.

Technical Context

This MOSFET employs a planar silicon process with optimized cell geometry to achieve low area-specific on-resistance and reduced C_iss (175 pF) and C_oss (21 pF). Its gate threshold voltage (V_GS(th)) ranges from 3 V to 5 V, ensuring reliable enhancement-mode turn-on with standard 10 V gate drivers.

The device integrates a robust intrinsic body diode rated for 3 A continuous and 12 A pulsed source-drain current, with trr = 293 ns and Q_rr = 0.74 μC at 25 °C - supporting moderate-frequency hard-switched topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for transient overvoltage
R_DS(on) max	3.2 Ω at V_GS = 10 V, I_D = 1.5 A - enables <10 W conduction loss at 3 A in TO-252 package
Q_g max	12 nC - allows fast switching with low gate drive power; compatible with 5–12 V logic-level drivers
E_AS	10.4 mJ - rated for unclamped inductive switching events without failure under defined test conditions
R_thJC	1.8 °C/W - enables 69 W power dissipation with modest heatsinking at case temperature ≤ 100 °C
V_SD	1.2 V at I_S = 1.5 A, T_J = 25 °C - low body diode drop reduces reverse recovery losses in freewheeling paths
trr	293 ns - defines minimum dead-time requirement in half-bridge configurations to avoid shoot-through

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H), compliant with IPC-7351B footprint recommendations.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–10 V logic-level drive; input capacitance C_iss = 175 pF limits high-frequency gate ringing
Pin 2 (D)	Drain	Main high-side power terminal; electrically and thermally connected to exposed copper pad; handles full 500 V blocking
Pin 3 (S)	Source	Power return and gate reference node; ties to PCB ground plane; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	≤ 38.4 Ω·nC - balances conduction and switching losses for optimal efficiency in 50–200 kHz SMPS
Avalanche energy rating (E_AS)	10.4 mJ - ensures single-pulse robustness during inductive load transients without external snubbers
High body diode ruggedness	Rated for ISM = 12 A pulsed; trr = 293 ns with low Q_rr = 0.74 μC - reduces stress in synchronous rectification and LLC resonant converters
Low input capacitance (C_iss)	175 pF - minimizes gate drive power and improves dv/dt immunity in high-noise industrial environments
Lead (Pb)-free and halogen-free	Compliant with RoHS Directive 2011/65/EU and Vishay's material categorization per doc# 99912 - suitable for green manufacturing

Applications

Server Power Supply	Industrial Welding Inverter
Use Scenario: Primary-side switch in 80+ Gold-certified 1 kW server PSU operating at 100 kHz. IC Role / Device Role / Timing Role: High-voltage switching element in flyback or LLC half-bridge topology; handles 400 V DC input with 500 V rating margin. Use Value: Low Q_g (12 nC) and fast td(off) (22 ns) reduce gate drive losses and enable precise timing control in digitally regulated systems.	Use Scenario: Output stage switch in 5–20 kHz IGBT-assisted arc welding inverter with active current limiting. IC Role / Device Role / Timing Role: Main switching device in dual-MOSFET output bridge; conducts up to 3 A continuous with 12 A pulsed capability during short-circuit events. Use Value: Avalanche-rated E_AS = 10.4 mJ and rugged body diode withstand repeated inductive turn-off stress without derating.
Plasma Display Power Module	Induction Heating Half-Bridge
Use Scenario: Sustaining electrode driver in 100–200 kHz plasma TV sustain circuit requiring high dv/dt immunity. IC Role / Device Role / Timing Role: Fast-switching N-channel switch controlling high-voltage AC sustain pulses across plasma cells. Use Value: dV/dt rating of 24 V/ns at T_J = 125 °C prevents false turn-on during rapid bus transitions in noisy display subsystems.	Use Scenario: Low-side switch in 20–50 kHz resonant half-bridge for domestic induction cooktops. IC Role / Device Role / Timing Role: Commutating switch handling 3 A RMS current with peak diode recovery demands during zero-voltage switching transitions. Use Value: V_SD = 1.2 V and Q_rr = 0.74 μC minimize body diode conduction loss and recovery-related EMI in compact EMI-sensitive appliances.

Server Power Supply

Industrial Welding Inverter

Use Scenario: Primary-side switch in 80+ Gold-certified 1 kW server PSU operating at 100 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element in flyback or LLC half-bridge topology; handles 400 V DC input with 500 V rating margin.

Use Value: Low Q_g (12 nC) and fast td(off) (22 ns) reduce gate drive losses and enable precise timing control in digitally regulated systems.

Use Scenario: Output stage switch in 5–20 kHz IGBT-assisted arc welding inverter with active current limiting.

IC Role / Device Role / Timing Role: Main switching device in dual-MOSFET output bridge; conducts up to 3 A continuous with 12 A pulsed capability during short-circuit events.

Use Value: Avalanche-rated E_AS = 10.4 mJ and rugged body diode withstand repeated inductive turn-off stress without derating.

Plasma Display Power Module

Induction Heating Half-Bridge

Use Scenario: Sustaining electrode driver in 100–200 kHz plasma TV sustain circuit requiring high dv/dt immunity.

IC Role / Device Role / Timing Role: Fast-switching N-channel switch controlling high-voltage AC sustain pulses across plasma cells.

Use Value: dV/dt rating of 24 V/ns at T_J = 125 °C prevents false turn-on during rapid bus transitions in noisy display subsystems.

Use Scenario: Low-side switch in 20–50 kHz resonant half-bridge for domestic induction cooktops.

IC Role / Device Role / Timing Role: Commutating switch handling 3 A RMS current with peak diode recovery demands during zero-voltage switching transitions.

Use Value: V_SD = 1.2 V and Q_rr = 0.74 μC minimize body diode conduction loss and recovery-related EMI in compact EMI-sensitive appliances.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK50ZFP	R_DS(on) = 3.5 Ω (V_GS = 10 V); Q_g = 11 nC; TO-220FP package; no avalanche rating specified	Larger thermal resistance (R_thJC ≈ 3.5 °C/W); requires larger heatsink in same power class	Preferred where through-hole mounting and higher surge tolerance are acceptable trade-offs for cost
IRFBC40APBF	R_DS(on) = 2.7 Ω (V_GS = 10 V); Q_g = 18 nC; TO-220 package; E_AS = 7.5 mJ	Higher gate charge increases driver complexity; lower avalanche energy reduces margin in unclamped inductive loads	Selected when lower R_DS(on) dominates over switching loss and board space constraints allow TO-220 footprint

Compared with STP3NK50ZFP and IRFBC40APBF, SIHD3N50D-GE3 offers superior thermal performance (R_thJC = 1.8 °C/W), certified avalanche ruggedness, and surface-mount DPAK compatibility - making it optimal for space-constrained, high-reliability industrial and telecom power stages where layout density and transient robustness are prioritized.

Availability

SIHD3N50D-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial welding inverters, and plasma display modules requiring stable component supply, lead-free compliance, and long-term industrial lifecycle support.

Supply support for SIHD3N50D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHD3N50D-GE3 belongs to Vishay's D Series Power MOSFET family, engineered for high-voltage switching in industrial, telecom, and consumer power conversion - emphasizing low FOM, avalanche ruggedness, and surface-mount reliability.

FAQ

What is the maximum continuous drain current rating for SIHD3N50D-GE3 at 100 °C case temperature?

The SIHD3N50D-GE3 has a maximum continuous drain current (I_D) of 1.9 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; operation above this current requires active cooling or reduced ambient temperature to maintain junction temperature ≤ 150 °C. The SIHD3N50D-GE3 datasheet confirms this value under V_GS = 10 V conditions.

Does SIHD3N50D-GE3 support logic-level gate drive?

No, SIHD3N50D-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 3 V to 5 V, but full enhancement requires V_GS = 10 V to achieve R_DS(on) ≤ 3.2 Ω. Driving SIHD3N50D-GE3 with only 3.3 V or 5 V results in significantly higher on-resistance and conduction loss; a dedicated 10 V gate driver is required for optimal performance.

What is the body diode reverse recovery time (trr) of SIHD3N50D-GE3, and how does it impact half-bridge design?

The SIHD3N50D-GE3 has a typical reverse recovery time (t_rr) of 293 ns at T_J = 25 °C, I_F = 1.5 A, dI/dt = 100 A/μs, and V_R = 20 V. This value determines minimum dead-time requirements in half-bridge configurations to prevent shoot-through; designers must allocate ≥ 350 ns dead-time when using SIHD3N50D-GE3 in synchronous or complementary switching topologies.

Is SIHD3N50D-GE3 suitable for use in automotive applications?

The SIHD3N50D-GE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical or engine compartment applications. While its operating temperature range (−55 °C to +150 °C) meets under-hood thermal requirements, Vishay does not specify automotive-grade reliability testing, PPAP documentation, or failure-in-time (FIT) data for SIHD3N50D-GE3. For automotive use, consult Vishay's AEC-Q101-qualified alternatives.

How does the avalanche energy rating (EAS) of SIHD3N50D-GE3 compare to similar 500 V MOSFETs?

The SIHD3N50D-GE3 is rated for single-pulse avalanche energy (E_AS) of 10.4 mJ under standardized test conditions (V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 3 A). This exceeds many competing 500 V DPAK MOSFETs - such as the IRFBC40APBF (7.5 mJ) - providing greater margin against inductive switching transients in industrial motor drives and welding inverters where SIHD3N50D-GE3 is commonly deployed.

SIHD3N50D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 175 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

SIHD3N50D-GE3 FAQ

1.How can I place an order for SIHD3N50D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD3N50D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD3N50D-GE3 reliable?

The price and inventory of SIHD3N50D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD3N50D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD3N50D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD3N50D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD3N50D-GE3?

SIHD3N50D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD3N50D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD3N50D-GE3?

For technical support, including SIHD3N50D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD3N50D-GE3 requirements.

6.How does Aetrix verify that SIHD3N50D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD3N50D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD3N50D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD3N50D-GE3?

All SIHD3N50D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD3N50D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD3N50D-GE3 part is unused and in its original packaging.

Return procedure for SIHD3N50D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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