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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD3N50DT1-GE3

Name: SIHD3N50DT1-GE3
Brand: Vishay Siliconix
SKU: SIHD3N50DT1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD3N50DT1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD3N50DT1-GE3.pdf

Description:: MOSFET N-CH 500V 3A DPAK

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Product details

Overview

SIHD3N50DT1-GE3 from Vishay Siliconix is a 500 V, 3.2 Ω (max), N-channel DPAK (TO-252) Power MOSFET optimized for high-voltage switching in offline SMPS and industrial power converters. It delivers 3.0 A continuous drain current at T_C = 25 °C, features 12 nC total gate charge, and supports avalanche energy rating of 10.4 mJ - enabling robust operation in flyback and LLC resonant topologies used in server PSUs.

For engineers reviewing the SIHD3N50DT1-GE3 datasheet, SIHD3N50DT1-GE3 pinout, SIHD3N50DT1-GE3 application, or SIHD3N50DT1-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (9.6 Ω·nC), fast 24 ns turn-off delay, and body diode with 293 ns reverse recovery time - critical for minimizing conduction and switching losses in high-frequency, high-reliability power stages.

Technical Context

This device employs a planar vertical DMOS structure with optimized cell pitch and gate oxide design to achieve low area-specific on-resistance (R_DS(on)) while maintaining high avalanche ruggedness. Its gate threshold voltage (3–5 V) ensures stable enhancement-mode operation with minimal risk of spurious turn-on under transient conditions.

The MOSFET integrates a monolithic body diode rated for 3 A continuous source-drain current and 12 A pulsed current, with characterized reverse recovery parameters (Q_rr = 0.74 μC, t_rr = 293 ns) enabling accurate loss modeling in synchronous rectification and freewheeling applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports primary-side switching in universal-input AC/DC converters up to 400 V DC bus.
R_DS(on) max @ 10 V	3.2 Ω - determines conduction loss at 1.5 A ID; typical value 2.6 Ω enables <1 W dissipation in 25 °C ambient with adequate heatsinking.
Q_g max	12 nC - defines gate drive energy requirement; low value reduces driver stress and enables use of simple bipolar or CMOS gate drivers.
E_AS	10.4 mJ - unclamped inductive switching capability allows reliable operation during overcurrent transients without external snubbers.
t_rr	293 ns - body diode reverse recovery time directly impacts switching loss and EMI in hard-switched topologies.
R_thJC	1.8 °C/W - junction-to-case thermal resistance enables 69 W power dissipation with ≤125 °C case temperature rise.

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H), compatible with IPC-7351B footprint recommendations.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires 10 V drive for full enhancement; ±30 V absolute max rating protects against ESD and gate overvoltage.
Pin 2 (D)	Drain	Main high-voltage terminal; electrically and thermally connected to exposed copper pad; must be routed with minimum trace inductance in high-dI/dt paths.
Pin 3 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations; forms return path for body diode conduction.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	9.6 Ω·nC - improves efficiency in 100–500 kHz SMPS by balancing conduction and switching losses.
Avalanche-rated (UIS)	10.4 mJ single-pulse energy - eliminates need for external clamping in inductive load switching and fault-tolerant designs.
Fast body diode recovery	t_rr = 293 ns, Q_rr = 0.74 μC - reduces cross-conduction loss and EMI in quasi-resonant and synchronous rectifier circuits.
High dV/dt immunity	24 V/ns at T_J = 125 °C - prevents false turn-on during high-speed voltage transients in high-side or half-bridge configurations.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for consumer, telecom, and industrial end-equipment requiring green compliance.

Applications

Server Power Supply	Industrial Welding Inverter
Use Scenario: Primary-side switch in 80+ Gold certified 1 kW server PSU using active-clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC input, operating at 200 kHz with zero-voltage switching assistance. Use Value: Low Q_g and fast t_off reduce gate drive loss and enable precise timing control; R_DS(on) stability over temperature maintains efficiency across 0–70 °C ambient range.	Use Scenario: Output stage switch in IGBT-gated arc-welding inverter delivering 200 A DC output with PWM-controlled current regulation. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged MOSFET driving resonant tank to generate high-frequency AC before rectification and filtering. Use Value: 10.4 mJ E_AS withstands repetitive short-circuit events during arc striking; low C_iss (175 pF) minimizes Miller-induced oscillation risk.
Plasma Display Power Module	Battery Charger for EV Onboard Charger (OBC)
Use Scenario: Sustaining electrode driver in plasma TV panel power supply generating 200–300 V sustain pulses at 200 kHz. IC Role / Device Role / Timing Role: High-repetition-rate switching device controlling pulse amplitude and duration in sustain circuitry. Use Value: Body diode's 12 A pulsed rating handles reverse recovery current surges; low R_DS(on) limits thermal rise during extended duty cycles.	Use Scenario: PFC boost switch in 6.6 kW OBC front-end, operating at 65–100 kHz with interleaved dual-phase architecture. IC Role / Device Role / Timing Role: Main power switch managing line-frequency ripple and high-frequency switching in continuous conduction mode (CCM). Use Value: 3.2 Ω R_DS(on) at 100 °C enables <1.5 W conduction loss per phase; 1.8 °C/W R_thJC supports direct heatsink mounting for compact thermal design.

Server Power Supply

Industrial Welding Inverter

Use Scenario: Primary-side switch in 80+ Gold certified 1 kW server PSU using active-clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC input, operating at 200 kHz with zero-voltage switching assistance.

Use Value: Low Q_g and fast t_off reduce gate drive loss and enable precise timing control; R_DS(on) stability over temperature maintains efficiency across 0–70 °C ambient range.

Use Scenario: Output stage switch in IGBT-gated arc-welding inverter delivering 200 A DC output with PWM-controlled current regulation.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged MOSFET driving resonant tank to generate high-frequency AC before rectification and filtering.

Use Value: 10.4 mJ E_AS withstands repetitive short-circuit events during arc striking; low C_iss (175 pF) minimizes Miller-induced oscillation risk.

Plasma Display Power Module

Battery Charger for EV Onboard Charger (OBC)

Use Scenario: Sustaining electrode driver in plasma TV panel power supply generating 200–300 V sustain pulses at 200 kHz.

IC Role / Device Role / Timing Role: High-repetition-rate switching device controlling pulse amplitude and duration in sustain circuitry.

Use Value: Body diode's 12 A pulsed rating handles reverse recovery current surges; low R_DS(on) limits thermal rise during extended duty cycles.

Use Scenario: PFC boost switch in 6.6 kW OBC front-end, operating at 65–100 kHz with interleaved dual-phase architecture.

IC Role / Device Role / Timing Role: Main power switch managing line-frequency ripple and high-frequency switching in continuous conduction mode (CCM).

Use Value: 3.2 Ω R_DS(on) at 100 °C enables <1.5 W conduction loss per phase; 1.8 °C/W R_thJC supports direct heatsink mounting for compact thermal design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK50ZFP	500 V, 4.5 Ω R_DS(on), 14 nC Q_g, TO-220FP package	Higher R_DS(on) and Q_g; larger through-hole footprint; lower thermal performance (R_thJC = 2.5 °C/W)	Preferred where board space permits through-hole mounting and cost sensitivity outweighs efficiency targets.
IXTP3N50D2	500 V, 3.5 Ω R_DS(on), 10 nC Q_g, TO-220 package	Slightly lower Q_g but no avalanche rating; higher R_thJC (2.0 °C/W); not halogen-free	Selected when ultra-low gate charge is prioritized and system-level protection handles inductive energy.

Compared with STP3NK50ZFP and IXTP3N50D2, SIHD3N50DT1-GE3 offers superior thermal resistance (1.8 °C/W), guaranteed avalanche capability, and surface-mount DPAK packaging - making it optimal for space-constrained, high-reliability, and thermally demanding industrial and telecom power designs.

Availability

SIHD3N50DT1-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, industrial welding inverters, and plasma display power modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHD3N50DT1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The D Series Power MOSFETs - including SIHD3N50DT1-GE3 - are engineered for high-voltage, medium-current switching in offline AC/DC and DC/DC converters where ruggedness, efficiency, and thermal reliability are critical.

FAQ

What is the maximum continuous drain current rating for SIHD3N50DT1-GE3 at 100 °C case temperature?

The SIHD3N50DT1-GE3 is rated for 1.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; designers must ensure heatsinking maintains case temperature ≤100 °C to sustain this current without exceeding the 150 °C maximum junction temperature.

Does SIHD3N50DT1-GE3 have an avalanche energy rating, and how is it tested?

Yes, SIHD3N50DT1-GE3 is avalanche energy rated at 10.4 mJ (E_AS) per pulse under defined test conditions: V_DD = 50 V, starting T_J = 25 °C, L = 2.3 mH, R_g = 25 Ω, and I_AS = 3 A. This rating confirms its ability to absorb inductive energy without failure during unclamped inductive switching events common in power converter fault conditions.

What is the gate threshold voltage range for SIHD3N50DT1-GE3, and why does it matter for drive circuit design?

The SIHD3N50DT1-GE3 has a gate threshold voltage (V_GS(th)) range of 3–5 V at T_J = 25 °C. This ensures reliable turn-on with standard 10 V gate drive while preventing accidental activation from noise or leakage currents below 3 V. Designers must maintain V_GS ≥ 10 V to achieve the specified R_DS(on) and avoid linear-mode operation that increases power dissipation.

How does the body diode performance of SIHD3N50DT1-GE3 impact its use in synchronous rectification?

The SIHD3N50DT1-GE3 body diode exhibits t_rr = 293 ns and Q_rr = 0.74 μC at T_J = 25 °C, enabling predictable reverse recovery behavior in synchronous rectifier configurations. While not optimized for ultra-fast recovery like dedicated SR FETs, its parameters allow accurate loss estimation and compatibility with adaptive gate timing controllers in LLC and resonant converters.

Is SIHD3N50DT1-GE3 suitable for use in high-humidity or outdoor industrial environments?

SIHD3N50DT1-GE3 is qualified per JEDEC standards for moisture sensitivity level (MSL) 1 and operates across –55 to +150 °C junction temperature. Its lead (Pb)-free and halogen-free construction meets IPC/JEDEC J-STD-020 requirements, supporting reflow assembly and long-term reliability in humid or thermally cycling environments - provided PCB conformal coating and proper creepage/clearance are implemented per IEC 60950-1 or IEC 62368-1.

SIHD3N50DT1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 175 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD3N50DT1-GE3 FAQ

1.How can I place an order for SIHD3N50DT1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD3N50DT1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD3N50DT1-GE3 reliable?

The price and inventory of SIHD3N50DT1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD3N50DT1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD3N50DT1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD3N50DT1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD3N50DT1-GE3?

SIHD3N50DT1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD3N50DT1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD3N50DT1-GE3?

For technical support, including SIHD3N50DT1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD3N50DT1-GE3 requirements.

6.How does Aetrix verify that SIHD3N50DT1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD3N50DT1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD3N50DT1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD3N50DT1-GE3?

All SIHD3N50DT1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD3N50DT1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD3N50DT1-GE3 part is unused and in its original packaging.

Return procedure for SIHD3N50DT1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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