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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD3N50DT4-GE3

Name: SIHD3N50DT4-GE3
Brand: Vishay Siliconix
SKU: SIHD3N50DT4-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD3N50DT4-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD3N50DT4-GE3.pdf

Description:: MOSFET N-CH 500V 3A DPAK

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Product details

Overview

SIHD3N50DT4-GE3 from Vishay Siliconix is a 500 V, 3.2 Ω (max), N-channel DPAK (TO-252) Power MOSFET optimized for high-voltage switching in offline SMPS, server power supplies, and induction heating. It delivers 3.0 A continuous drain current at T_C = 25 °C, features 12 nC total gate charge, and is rated for 10.4 mJ single-pulse avalanche energy - enabling robust operation in inductive load circuits.

For engineers reviewing the SIHD3N50DT4-GE3 datasheet, SIHD3N50DT4-GE3 pinout, SIHD3N50DT4-GE3 application, or SIHD3N50DT4-GE3 equivalent, key selection criteria include its 500 V V_DS, low R_DS(on) × Q_g figure-of-merit, fast 24 ns max turn-off delay, and DPAK thermal performance with R_thJC = 1.8 °C/W.

Technical Context

This device uses planar vertical DMOS technology with an integrated rugged body diode rated for 12 A pulsed source-drain current and 293 ns reverse recovery time. Its gate threshold voltage (3–5 V) ensures compatibility with standard 10 V gate drivers while maintaining low leakage (≤100 nA IGSS).

The MOSFET operates within -55 to +150 °C junction temperature range and supports dV/dt immunity up to 24 V/ns at T_J = 125 °C. Thermal design is enabled by its 1.8 °C/W junction-to-case resistance and 62 °C/W junction-to-ambient rating under standard PCB layout conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports primary-side switching in universal-input AC/DC converters up to 400 V DC bus
R_DS(on) max @ 10 V	3.2 Ω - enables low conduction loss at 1.5 A ID, suitable for medium-power <100 W topologies
Q_g max	12 nC - reduces gate drive power and allows use of low-cost, low-current drivers
E_AS	10.4 mJ - withstands unclamped inductive switching events without failure in motor drive or SMPS flyback snubbers
I_D cont @ T_C = 25 °C	3.0 A - defines maximum steady-state current with heatsink; derates linearly above 25 °C case temp
R_thJC	1.8 °C/W - enables efficient heat transfer to PCB copper or external heatsink in DPAK footprint
V_GS(th)	3–5 V - ensures reliable turn-on with standard logic-level or 10 V gate drivers; avoids partial enhancement

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H). Drain tab occupies full backside area for optimal PCB copper pour attachment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires ≤±30 V drive; 2 nC Qgs enables fast turn-on with minimal overshoot
Pin 2 (D)	Drain	Main high-voltage terminal; electrically and thermally connected to exposed copper pad; handles 500 V blocking
Pin 3 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side switch configurations

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	38.4 Ω·nC - improves efficiency in hard-switched PFC and LLC resonant converters by balancing conduction and switching loss
Avalanche-rated (UIS)	10.4 mJ single-pulse - eliminates need for external clamping in cost-sensitive flyback or forward converter snubber designs
Rugged body diode	293 ns t_rr, 0.74 μC Q_rr - supports synchronous rectification replacement in low-frequency DC/DC where diode recovery matters
High dV/dt immunity	24 V/ns at 125 °C - prevents false turn-on during fast voltage transients in high-noise industrial motor drives
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's material categorization per doc# 99912 - suitable for consumer and telecom end-equipment

Applications

Server Power Supply	Induction Heating Inverter
Use Scenario: Primary-side switch in 50–100 W auxiliary power supply for server motherboard management units. IC Role / Device Role / Timing Role: Low-side N-channel switch in flyback topology operating at 65–130 kHz with 400 V DC input. Use Value: 3.2 Ω R_DS(on) limits conduction loss to <0.7 W at 1.5 A, while 12 nC Q_g keeps gate drive losses below 15 mW at 100 kHz.	Use Scenario: Half-bridge leg switch in 20–50 kHz resonant inverter for domestic induction cooktops. IC Role / Device Role / Timing Role: High-voltage switching element handling 450 V DC bus and 8–12 A peak load current. Use Value: 10.4 mJ E_AS rating absorbs turn-off energy from leakage inductance without snubber redesign; 24 V/ns dV/dt tolerance prevents shoot-through.
Industrial Welding Control	Plasma Display Power Module
Use Scenario: Gate-controlled switch in IGBT driver stage for arc initiation and current ramp control in MIG welders. IC Role / Device Role / Timing Role: Fast-turning switch driving gate of main 600 V IGBT; operates with 24 ns t_d(off) and 26 ns t_f. Use Value: 2.6 Ω typical R_DS(on) ensures <0.5 V drop at 200 mA drive current, minimizing driver stage loss and thermal stress.	Use Scenario: Sustaining electrode driver in AC plasma display panel (PDP) power supply with 300–400 V sustain pulses. IC Role / Device Role / Timing Role: High-reliability switch cycling at 200 kHz with repetitive 400 V, 2 A pulses and strict ESD immunity requirements. Use Value: 1 μA max I_DSS at 500 V and -55 to +150 °C operating range ensure long-term stability in sealed display enclosures with limited airflow.

Server Power Supply

Induction Heating Inverter

Use Scenario: Primary-side switch in 50–100 W auxiliary power supply for server motherboard management units.

IC Role / Device Role / Timing Role: Low-side N-channel switch in flyback topology operating at 65–130 kHz with 400 V DC input.

Use Value: 3.2 Ω R_DS(on) limits conduction loss to <0.7 W at 1.5 A, while 12 nC Q_g keeps gate drive losses below 15 mW at 100 kHz.

Use Scenario: Half-bridge leg switch in 20–50 kHz resonant inverter for domestic induction cooktops.

IC Role / Device Role / Timing Role: High-voltage switching element handling 450 V DC bus and 8–12 A peak load current.

Use Value: 10.4 mJ E_AS rating absorbs turn-off energy from leakage inductance without snubber redesign; 24 V/ns dV/dt tolerance prevents shoot-through.

Industrial Welding Control

Plasma Display Power Module

Use Scenario: Gate-controlled switch in IGBT driver stage for arc initiation and current ramp control in MIG welders.

IC Role / Device Role / Timing Role: Fast-turning switch driving gate of main 600 V IGBT; operates with 24 ns t_d(off) and 26 ns t_f.

Use Value: 2.6 Ω typical R_DS(on) ensures <0.5 V drop at 200 mA drive current, minimizing driver stage loss and thermal stress.

Use Scenario: Sustaining electrode driver in AC plasma display panel (PDP) power supply with 300–400 V sustain pulses.

IC Role / Device Role / Timing Role: High-reliability switch cycling at 200 kHz with repetitive 400 V, 2 A pulses and strict ESD immunity requirements.

Use Value: 1 μA max I_DSS at 500 V and -55 to +150 °C operating range ensure long-term stability in sealed display enclosures with limited airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK50ZFP	500 V, 4.5 Ω R_DS(on), 14 nC Q_g, TO-220FP package	Higher R_DS(on) and larger through-hole footprint; lower thermal conductivity (R_thJC = 2.5 °C/W)	Acceptable for lower-current (<2 A) or space-tolerant designs where DPAK mounting is not feasible
IRFBC40APBF	500 V, 2.2 Ω R_DS(on), 22 nC Q_g, TO-220 package	Lower on-resistance but higher gate charge increases driver complexity and switching loss at >50 kHz	Better for low-frequency, high-current linear or quasi-resonant applications where gate drive simplicity is secondary

Compared with STP3NK50ZFP and IRFBC40APBF, SIHD3N50DT4-GE3 offers superior thermal performance in surface-mount form factor, balanced FOM for medium-frequency SMPS, and tighter V_GS(th) distribution - making it preferred for compact, high-reliability industrial and telecom power modules.

Availability

SIHD3N50DT4-GE3 is available at Aetrix Electronics and suitable for server power supplies, induction heating inverters, industrial welding controls, and plasma display power modules requiring stable component supply and lead-free compliance.

Supply support for SIHD3N50DT4-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The SIHD3N50DT4-GE3 belongs to Vishay's D Series Power MOSFET family, engineered for high-voltage, medium-current switching in industrial and consumer power conversion where avalanche ruggedness and low FOM are critical.

FAQ

What is the maximum continuous drain current rating for SIHD3N50DT4-GE3 at 100 °C case temperature?

The SIHD3N50DT4-GE3 is rated for 1.9 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This reflects linear derating from 3.0 A at 25 °C using the specified 0.56 W/°C factor. Designers must verify PCB copper area and airflow to maintain this case temperature under full load.

Does SIHD3N50DT4-GE3 support logic-level gate drive?

No, SIHD3N50DT4-GE3 is not a logic-level MOSFET. Its gate threshold voltage is specified from 3 V to 5 V, and full enhancement requires V_GS = 10 V to achieve the rated 3.2 Ω R_DS(on). It is intended for standard 10 V gate drivers, not 3.3 V or 5 V microcontroller outputs without level-shifting.

What is the thermal resistance from junction to case (R_thJC) for SIHD3N50DT4-GE3?

The SIHD3N50DT4-GE3 has a maximum junction-to-case thermal resistance of 1.8 °C/W, measured from die junction to the drain tab (exposed pad) of the DPAK package. This value assumes proper soldering to ≥1 in² of 2 oz copper with thermal vias - critical for achieving rated 3.0 A current capability.

Is SIHD3N50DT4-GE3 suitable for avalanche energy testing per JEDEC JESD24-1?

Yes, SIHD3N50DT4-GE3 is explicitly rated for single-pulse unclamped inductive switching (UIS) with E_AS = 10.4 mJ under defined test conditions (V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, I_AS = 3 A). This qualifies it for controlled avalanche operation in flyback snubbers and protection-critical topologies.

How does the body diode performance of SIHD3N50DT4-GE3 compare to standard FRDs in 20–100 kHz applications?

The SIHD3N50DT4-GE3 body diode has t_rr = 293 ns and Q_rr = 0.74 μC at 25 °C, which is slower than dedicated fast recovery diodes but sufficient for non-synchronous rectification in 20–100 kHz SMPS where reverse recovery loss is secondary to conduction loss. Its ruggedness supports repeated commutation without degradation.

SIHD3N50DT4-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: D

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 175 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD3N50DT4-GE3 FAQ

1.How can I place an order for SIHD3N50DT4-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD3N50DT4-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD3N50DT4-GE3 reliable?

The price and inventory of SIHD3N50DT4-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD3N50DT4-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD3N50DT4-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD3N50DT4-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD3N50DT4-GE3?

SIHD3N50DT4-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD3N50DT4-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD3N50DT4-GE3?

For technical support, including SIHD3N50DT4-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD3N50DT4-GE3 requirements.

6.How does Aetrix verify that SIHD3N50DT4-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD3N50DT4-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD3N50DT4-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD3N50DT4-GE3?

All SIHD3N50DT4-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD3N50DT4-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD3N50DT4-GE3 part is unused and in its original packaging.

Return procedure for SIHD3N50DT4-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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