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Vishay Siliconix SIHD3N50DT5-GE3
- Part No.:
- SIHD3N50DT5-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHD3N50DT5-GE3.pdf
- Description:
- MOSFET N-CH 500V 3A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,651
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Product details
Overview
SIHD3N50DT5-GE3 from Vishay Siliconix is a 500 V, 3.2 Ω (max), N-channel DPAK (TO-252) Power MOSFET optimized for high-voltage switching in SMPS, server power supplies, and induction heating. It delivers 3.0 A continuous drain current at TC = 25 °C, features 12 nC total gate charge, and is rated for 10.4 mJ single-pulse avalanche energy - enabling robust operation in inductive load circuits.
For engineers reviewing the SIHD3N50DT5-GE3 datasheet, SIHD3N50DT5-GE3 pinout, SIHD3N50DT5-GE3 application, or SIHD3N50DT5-GE3 equivalent, key selection criteria include its low RDS(on) × Qg figure-of-merit (≈38.4 Ω·nC), fast 24 ns max turn-off delay, and 1.8 °C/W junction-to-case thermal resistance - critical for thermally constrained high-efficiency converters.
Technical Context
This device employs a planar vertical DMOS structure with optimized cell pitch and gate oxide design to achieve low area-specific on-resistance and reduced input capacitance (Ciss = 175 pF typ). Its body diode is ruggedized for repetitive unclamped inductive switching, with 293 ns reverse recovery time and 0.74 μC Qrr at 25 °C.
The MOSFET operates with a gate threshold voltage of 3–5 V and supports standard 10 V gate drive. Its safe operating area (SOA) is defined up to 100 ms pulse width at 25 °C case temperature, limited by RDS(on) conduction and BVDSS breakdown - making it suitable for hard-switched flyback and forward topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 500 V - supports 400 V DC bus designs with 25 % margin for voltage transients in telecom/server PSUs |
| RDS(on) max @ 10 V | 3.2 Ω - enables <10 W conduction loss at 1.5 A ID, suitable for medium-power auxiliary rails |
| Qg max | 12 nC - allows efficient 100–500 kHz switching with low gate driver power dissipation |
| EAS | 10.4 mJ - withstands unclamped inductive energy without failure in motor drive snubberless designs |
| RthJC | 1.8 °C/W - permits >50 W power dissipation with modest heatsinking in DPAK footprint |
| ID cont @ TC = 25 °C | 3.0 A - defines maximum steady-state current under ideal thermal conditions |
| VGS(th) | 3–5 V - ensures reliable turn-on with standard logic-level or dedicated gate drivers |
Pinout & Package
DPAK (TO-252) package: surface-mount, single-ended heat sink tab (drain-connected), 3-pin configuration with gull-wing leads. Tab is electrically connected to drain; no isolation required between PCB copper and heatsink mounting surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to power ground or source return path in buck/forward topologies |
| Pin 2 (Gate) | Control terminal (G) | High-impedance MOS gate; requires ≤10 V drive and low-inductance routing to minimize ringing |
| Pin 3 (Drain) | Power output terminal (D) | Connected to internal die drain and exposed metal tab; must be routed to high-voltage node and heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × Qg FOM | ≈38.4 Ω·nC - reduces combined conduction and switching losses in 100–300 kHz SMPS |
| Avalanche-rated (UIS) | 10.4 mJ single-pulse - eliminates need for external clamping in cost-sensitive inductive load switching |
| Rugged body diode | 293 ns trr, 0.74 μC Qrr - supports synchronous rectification and freewheeling in half-bridge configurations |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - meets industrial and telecom environmental requirements |
| DPAK thermal performance | 1.8 °C/W RthJC - enables direct heatsink mounting without thermal interface pads in space-constrained layouts |
Applications
| Server Power Supply | Induction Heating Inverter |
|---|---|
|
Use Scenario: Primary-side switch in 500 W LLC resonant converter for 48 V intermediate bus generation. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC input, switching at 200–300 kHz with zero-voltage transition. Use Value: Low Ciss (175 pF) and fast turn-off (22 ns typ) reduce dead-time losses and improve ZVS range across line/load. |
Use Scenario: Half-bridge upper/lower switch in 2–5 kW domestic induction cooktop inverter stage. IC Role / Device Role / Timing Role: Hard-switched 20–50 kHz power switch driving series-resonant tank; subjected to high dV/dt and reverse recovery stress. Use Value: 24 V/ns dV/dt rating and 10.4 mJ EAS ensure reliability during commutation-induced voltage spikes and diode recovery events. |
| Industrial Motor Drive | Battery Charger Output Stage |
|
Use Scenario: Low-side switch in 3-phase IGBT gate driver auxiliary supply with isolated DC/DC converter. IC Role / Device Role / Timing Role: Regulated 15 V output switch in flyback controller IC bias supply; operates continuously at 100 kHz. Use Value: 3.2 Ω RDS(on) limits conduction loss to <700 mW at 1.5 A, supporting >85 % efficiency in compact DPAK layout. |
Use Scenario: Secondary-side synchronous rectifier in 12 V/20 A telecom-grade battery charger with active clamp forward topology. IC Role / Device Role / Timing Role: Body diode conducts freewheeling current before synchronous gate signal arrives; must survive reverse recovery. Use Value: 293 ns trr and 5 A IRRM prevent voltage overshoot and secondary-side shoot-through during forced commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3NK50ZFP | 500 V, 4.5 Ω RDS(on), 14 nC Qg, TO-220FP package | Higher RDS(on) and larger through-hole package - less suitable for high-density SMT designs | Preferred where legacy TO-220 layout exists and thermal mass compensates higher on-resistance |
| IRFBC40APBF | 600 V, 2.2 Ω RDS(on), 25 nC Qg, TO-220 package | Higher voltage rating but double Qg - increases gate drive loss and slows switching in high-frequency SMPS | Chosen when 600 V rating is mandatory and lower switching frequency (<100 kHz) mitigates Qg penalty |
Compared with STP3NK50ZFP and IRFBC40APBF, SIHD3N50DT5-GE3 offers the best balance of low RDS(on) × Qg, DPAK thermal performance, and avalanche ruggedness - making it optimal for space-constrained, medium-power, high-frequency switching applications requiring reliability without layout redesign.
Availability
SIHD3N50DT5-GE3 is available at Aetrix Electronics and suitable for server power supplies, induction heating inverters, and industrial motor drives requiring stable component supply, RoHS-compliant packaging, and consistent DPAK thermal performance.
Supply support for SIHD3N50DT5-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The D Series Power MOSFETs, including SIHD3N50DT5-GE3, were engineered for high-voltage, medium-current switching in industrial and computing power systems - emphasizing avalanche ruggedness, low FOM, and surface-mount thermal efficiency.
FAQ
What is the maximum continuous drain current rating for SIHD3N50DT5-GE3 at 100 °C case temperature?
The SIHD3N50DT5-GE3 has a maximum continuous drain current (ID) of 1.9 A at TC = 100 °C, derated linearly from 3.0 A at 25 °C using a factor of 0.56 W/°C. This reflects real-world thermal constraints in enclosed power modules where heatsink temperature rises significantly above ambient.
Does SIHD3N50DT5-GE3 support logic-level gate drive?
No - SIHD3N50DT5-GE3 is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 3 V to 5 V, and full enhancement requires VGS = 10 V per the RDS(on) specification. It is designed for standard gate drivers, not 3.3 V or 5 V microcontroller outputs without level-shifting.
What is the significance of the "T5" suffix in SIHD3N50DT5-GE3?
The "T5" denotes tape-and-reel packaging per EIA-481-D standard, with 2,500 units per reel. This distinguishes it from SiHD3N50D-GE3 (bulk), SiHD3N50DT1-GE3 (1,000/reel), and SiHD3N50DT4-GE3 (500/reel) - all sharing identical electrical and thermal specifications.
Can SIHD3N50DT5-GE3 replace older SiHD3N50D-E3 in existing designs?
Yes - SIHD3N50DT5-GE3 is a direct replacement for SiHD3N50D-E3, maintaining identical electrical characteristics, DPAK (TO-252) mechanical outline, and RoHS/halogen-free compliance. The "-GE3" suffix confirms Vishay's lead (Pb)-free and halogen-free qualification per J-STD-609.
How does the body diode performance of SIHD3N50DT5-GE3 impact its use in synchronous rectification?
The SIHD3N50DT5-GE3 body diode has trr = 293 ns and Qrr = 0.74 μC at 25 °C, enabling controlled freewheeling in non-synchronous topologies. However, for true synchronous rectification, an external Schottky or dedicated SR controller is recommended - as the body diode's recovery behavior introduces timing uncertainty and voltage overshoot if used as the primary rectifier.
SIHD3N50DT5-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.2Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 175 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 69W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SIHD3N50DT5-GE3 FAQ
1.How can I place an order for SIHD3N50DT5-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHD3N50DT5-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHD3N50DT5-GE3 reliable?
The price and inventory of SIHD3N50DT5-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD3N50DT5-GE3 is usually 5 days.
3.What payment methods are accepted for SIHD3N50DT5-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD3N50DT5-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHD3N50DT5-GE3?
SIHD3N50DT5-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHD3N50DT5-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHD3N50DT5-GE3?
For technical support, including SIHD3N50DT5-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD3N50DT5-GE3 requirements.
6.How does Aetrix verify that SIHD3N50DT5-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHD3N50DT5-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD3N50DT5-GE3 meets industry standards.
7.What is the process for return or replacement of SIHD3N50DT5-GE3?
All SIHD3N50DT5-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD3N50DT5-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHD3N50DT5-GE3 part is unused and in its original packaging.
Return procedure for SIHD3N50DT5-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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