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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD5N50D-E3

Name: SIHD5N50D-E3
Brand: Vishay Siliconix
SKU: SIHD5N50D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD5N50D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD5N50D-E3.pdf

Description:: MOSFET N-CH 500V 5.3A DPAK

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Product details

Overview

SIHD5N50D-E3 from Vishay Siliconix is a 500 V, 5.3 A N-channel DPAK (TO-252) power MOSFET optimized for high-voltage switching in offline SMPS and industrial motor drives. It features 1.5 Ω max R_DS(on) at V_GS = 10 V, 20 nC max total gate charge, and 28.8 mJ single-pulse avalanche energy rating - enabling robust operation in flyback and LLC resonant converters used in server power supplies.

For engineers reviewing the SIHD5N50D-E3 datasheet, SIHD5N50D-E3 pinout, SIHD5N50D-E3 application, or SIHD5N50D-E3 equivalent, key selection criteria include its 1.2 Ω typical R_DS(on), low 325 pF input capacitance, 1.2 °C/W junction-to-case thermal resistance, and DPAK package suitability for thermally demanding 5–10 W per device power stages.

Technical Context

This MOSFET employs planar silicon technology with an integrated body diode rated for 5 A continuous source-drain current and 320 ns reverse recovery time. Its gate threshold voltage (3–5 V) ensures compatibility with standard 10 V gate drivers while maintaining low leakage (<1 μA at 500 V).

The device's 24 V/ns dV/dt rating and avalanche-rated construction support reliable operation under inductive switching stress in hard-switched topologies. Thermal design is enabled by its 1.2 °C/W R_thJC, allowing direct heatsink mounting via the exposed drain pad in DPAK.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports primary-side switching in universal-input (85–265 VAC) offline SMPS without derating
R_DS(on) max @ 10 V	1.5 Ω - limits conduction loss to ≤3.8 W at 5.3 A, enabling compact thermal design
Q_g max	20 nC - enables fast turn-on with ≤100 ns delay using 10 Ω gate resistor and 12 V driver
E_AS	28.8 mJ - withstands unclamped inductive energy spikes in relay driving and motor commutation
R_thJC	1.2 °C/W - allows >80 W power dissipation with 100 °C case temperature rise, critical for sealed enclosures
C_iss	325 pF - reduces gate drive power loss and EMI generation in 100–500 kHz switching applications
V_GS(th)	3–5 V - ensures full enhancement with industry-standard 10 V gate drivers, avoiding partial turn-on risk

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H), compliant with IPC-7351B SOIC127P600X115-3N footprint.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires ≤±30 V bias; 100 nA leakage ensures low standby power
Pin 2 (D)	Drain	Main high-voltage terminal; electrically connected to exposed copper pad for heatsinking
Pin 3 (S)	Source	Power return path and gate reference; ties to PCB ground plane for stable switching

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	1.5 Ω × 20 nC = 30 Ω·nC - improves efficiency in high-frequency SMPS versus legacy 500 V MOSFETs
Avalanche energy rated	28.8 mJ single-pulse - eliminates need for external snubbers in inductive load switching
High body diode ruggedness	320 ns t_rr, 1.2 μC Q_rr - sustains repetitive commutation in half-bridge motor drives without degradation
Low C_oss (34 pF)	Reduces capacitive turn-off loss and improves light-load efficiency in resonant converters
Lead (Pb)-free & halogen-free	E3 suffix denotes RoHS-compliant termination; compatible with lead-free reflow profiles up to 300 °C peak

Applications

Server Power Supply	Plasma Display Driver
Use Scenario: Primary-side switch in 500 W active-clamp forward converter for telecom rectifiers. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 200 kHz PWM control. Use Value: 1.5 Ω R_DS(on) and 20 nC Q_g reduce conduction + switching losses to <4.2 W, enabling 92% efficiency at full load.	Use Scenario: Sustain electrode driver in plasma TV panel addressing circuitry. IC Role / Device Role / Timing Role: Fast-switching high-voltage switch controlling 300 V sustain pulses at 200 kHz. Use Value: 24 V/ns dV/dt rating prevents false triggering during rapid bus transitions; 325 pF C_iss minimizes gate drive power.
Induction Heating Inverter	Battery Charger Flyback
Use Scenario: Half-bridge leg switch in 2.5 kW domestic induction cooker operating at 20–50 kHz. IC Role / Device Role / Timing Role: Hard-switched power transistor managing 450 V DC link and 15 A peak current. Use Value: 28.8 mJ E_AS absorbs turn-off energy from leakage inductance, eliminating need for clamping diodes.	Use Scenario: Primary switch in 65 W universal-input flyback charger for laptops. IC Role / Device Role / Timing Role: 500 V-rated switch supporting 85–265 VAC input with quasi-resonant control. Use Value: 500 V V_DS rating provides 20% margin over 400 V DC bus; 1.2 Ω typical R_DS(on) keeps losses <1.5 W at 1.2 A RMS.

Server Power Supply

Plasma Display Driver

Use Scenario: Primary-side switch in 500 W active-clamp forward converter for telecom rectifiers.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 200 kHz PWM control.

Use Value: 1.5 Ω R_DS(on) and 20 nC Q_g reduce conduction + switching losses to <4.2 W, enabling 92% efficiency at full load.

Use Scenario: Sustain electrode driver in plasma TV panel addressing circuitry.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch controlling 300 V sustain pulses at 200 kHz.

Use Value: 24 V/ns dV/dt rating prevents false triggering during rapid bus transitions; 325 pF C_iss minimizes gate drive power.

Induction Heating Inverter

Battery Charger Flyback

Use Scenario: Half-bridge leg switch in 2.5 kW domestic induction cooker operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Hard-switched power transistor managing 450 V DC link and 15 A peak current.

Use Value: 28.8 mJ E_AS absorbs turn-off energy from leakage inductance, eliminating need for clamping diodes.

Use Scenario: Primary switch in 65 W universal-input flyback charger for laptops.

IC Role / Device Role / Timing Role: 500 V-rated switch supporting 85–265 VAC input with quasi-resonant control.

Use Value: 500 V V_DS rating provides 20% margin over 400 V DC bus; 1.2 Ω typical R_DS(on) keeps losses <1.5 W at 1.2 A RMS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, 1.5 Ω R_DS(on), 25 nC Q_g, TO-220FP package	Through-hole mounting; higher Q_g increases gate drive loss at >200 kHz	Preferred for cost-sensitive, lower-frequency (<100 kHz) designs where PCB space permits through-hole layout
IRFBC40APBF	600 V, 6.2 A, 1.2 Ω R_DS(on), 32 nC Q_g, TO-220 package	Higher voltage rating but larger package and higher switching loss due to 60% greater Q_g	Suitable when 600 V margin is required for transient-heavy industrial mains; avoid in high-frequency SMPS

Compared with STP5NK50ZFP and IRFBC40APBF, SIHD5N50D-E3 delivers superior high-frequency efficiency via lower Q_g and surface-mount DPAK thermal performance, making it optimal for space-constrained, 200+ kHz server and display power stages.

Availability

SIHD5N50D-E3 is available at Aetrix Electronics and suitable for server power supplies, plasma display drivers, induction heating inverters, and battery charger flyback converters requiring stable component supply across multi-year production cycles.

Supply support for SIHD5N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The D Series power MOSFETs, including SIHD5N50D-E3, were engineered for high-voltage, medium-current switching in offline power conversion - emphasizing low R_DS(on) × Q_g figure-of-merit and rugged avalanche capability.

FAQ

What is the maximum continuous drain current rating for SIHD5N50D-E3 at 100 °C case temperature?

The SIHD5N50D-E3 has a maximum continuous drain current of 3.4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from the 5.3 A rating at 25 °C reflects thermal limitations of the DPAK package; actual usable current depends on PCB copper area and heatsinking. The SIHD5N50D-E3 must be mounted with adequate thermal relief to maintain junction temperature below 150 °C.

Does SIHD5N50D-E3 support logic-level gate drive?

No, SIHD5N50D-E3 is not a logic-level MOSFET. Its gate threshold voltage range is 3–5 V, and it is characterized for full enhancement at V_GS = 10 V. Driving SIHD5N50D-E3 with only 3.3 V or 5 V may result in incomplete turn-on and excessive R_DS(on); a dedicated 10–12 V gate driver is required for optimal performance. The SIHD5N50D-E3 datasheet does not specify parameters at V_GS < 10 V.

What is the recommended PCB pad layout for SIHD5N50D-E3 in DPAK (TO-252) package?

Vishay recommends a minimum copper pad of 10.67 mm × 5.69 mm (0.420″ × 0.224″) for the drain tab of SIHD5N50D-E3, with thermal vias to inner/ground planes. The pad should match the exposed drain footprint per IPC-7351B SOIC127P600X115-3N. Insufficient copper area raises R_thJA above 62 °C/W, risking thermal runaway. The SIHD5N50D-E3 thermal performance is directly tied to this layout compliance.

Is SIHD5N50D-E3 suitable for avalanche operation in repetitive conditions?

The SIHD5N50D-E3 is rated for single-pulse avalanche energy (E_AS) of 28.8 mJ, but Vishay does not specify repetitive avalanche capability. Applications subject to repeated inductive switching stress - such as motor phase-leg commutation - require additional derating or external protection. The SIHD5N50D-E3 should not be relied upon for unclamped repetitive avalanche without validation per Application Note AN826.

How does the body diode performance of SIHD5N50D-E3 compare to fast recovery diodes in synchronous rectification?

The SIHD5N50D-E3 body diode has t_rr = 320 ns and Q_rr = 1.2 μC, which is slower and higher-loss than purpose-built 500 V fast recovery diodes (e.g., 100 ns, 0.3 μC). While usable in non-synchronous flyback or freewheeling roles, it is not recommended for high-frequency synchronous rectification. For such use, the SIHD5N50D-E3 should be paired with an external Schottky or SiC diode to minimize conduction and recovery losses.

SIHD5N50D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 325 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD5N50D-E3 FAQ

1.How can I place an order for SIHD5N50D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD5N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD5N50D-E3 reliable?

The price and inventory of SIHD5N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD5N50D-E3 is usually 5 days.

3.What payment methods are accepted for SIHD5N50D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD5N50D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD5N50D-E3?

SIHD5N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD5N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD5N50D-E3?

For technical support, including SIHD5N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD5N50D-E3 requirements.

6.How does Aetrix verify that SIHD5N50D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHD5N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD5N50D-E3 meets industry standards.

7.What is the process for return or replacement of SIHD5N50D-E3?

All SIHD5N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD5N50D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD5N50D-E3 part is unused and in its original packaging.

Return procedure for SIHD5N50D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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