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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD5N50D-GE3

Name: SIHD5N50D-GE3
Brand: Vishay Siliconix
SKU: SIHD5N50D-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD5N50D-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD5N50D-GE3.pdf

Description:: MOSFET N-CH 500V 5.3A TO252AA

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Product details

Overview

SIHD5N50D-GE3 from Vishay Siliconix is a 500 V, 5.3 A N-channel DPAK (TO-252) power MOSFET with 1.5 Ω R_DS(on) at V_GS = 10 V, 20 nC total gate charge, and 28.8 mJ single-pulse avalanche energy-designed for high-voltage switching in server SMPS and induction heating circuits.

For engineers reviewing the SIHD5N50D-GE3 datasheet, SIHD5N50D-GE3 pinout, SIHD5N50D-GE3 application, or SIHD5N50D-GE3 equivalent, key selection criteria include its 1.2 Ω typical R_DS(on), 325 pF input capacitance, 1.2 °C/W junction-to-case thermal resistance, and DPAK package suitability for medium-power industrial DC-DC and motor drive stages.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its 500 V V_DS rating supports 400 V bus applications with margin, while the 24 V/ns dV/dt capability enables robust operation under fast transient conditions without spurious turn-on.

The integrated body diode features 320 ns reverse recovery time and 1.2 V forward voltage at 4 A, supporting synchronous rectification and freewheeling roles in flyback and LLC converters where diode ruggedness and controlled recovery are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % safety margin
R_DS(on) max @ 10 V	1.5 Ω - delivers ≤ 37.5 W conduction loss at 5 A continuous drain current
Q_g max	20 nC - enables efficient 100–300 kHz switching with standard 12 V gate drivers
E_AS	28.8 mJ - withstands unclamped inductive switching events in motor drive H-bridges
R_thJC	1.2 °C/W - allows 104 W power dissipation with ≤ 125 °C case temperature rise
C_iss	325 pF - reduces gate drive power and improves EMI behavior vs. higher-C_iss alternatives
V_GS(th)	3–5 V - ensures reliable enhancement-mode turn-on with standard logic-level gate signals

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal management; 3-pin surface-mount configuration optimized for PCB heat spreading and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level signal; 100 nA leakage ensures low standby current
D (Drain)	High-voltage output terminal	Connected to exposed copper pad; carries full load current and dissipates heat directly to PCB
S (Source)	Reference node	Common return path for gate drive and load current; defines V_GS reference

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	30 Ω·nC - balances conduction and switching losses for high-efficiency 100–250 kHz operation
Avalanche-rated	28.8 mJ single-pulse E_AS - eliminates need for external snubbers in inductive load switching
High body diode ruggedness	20 A pulsed I_SM, 320 ns t_rr - sustains repeated reverse recovery stress in motor drive freewheeling
Lead (Pb)-free & halogen-free	Meets RoHS 2011/65/EU and JEDEC JS709C - compliant for global industrial and telecom deployments

Applications

Server Power Supply	Induction Heating Inverter
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW server PSUs using active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage N-channel switch handling 400 V DC bus with 100–200 kHz PWM. Use Value: 1.5 Ω R_DS(on) and 20 nC Q_g reduce combined conduction + switching losses below 1.2 W at full load.	Use Scenario: Half-bridge leg in 10–20 kHz resonant induction heater driving 10–50 kW loads. IC Role / Device Role / Timing Role: Medium-power switching element in high-current, high-dV/dt inverter stage. Use Value: 24 V/ns dV/dt rating and 28.8 mJ E_AS prevent false triggering and withstand voltage spikes during zero-crossing transitions.
Welding Power Stage	Battery Charger Output Switch
Use Scenario: Output chopper in IGBT-gated arc welding inverters requiring fast, rugged switching at 15–30 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling duty cycle of primary transformer current. Use Value: 5.3 A continuous ID and 10 A pulsed IDM support 300–500 A weld currents via current multiplication.	Use Scenario: Isolation switch in 48 V–600 V multi-stage EV battery charger DC link. IC Role / Device Role / Timing Role: High-reliability main DC switch enabling safe maintenance isolation and fault clearing. Use Value: 500 V V_DS and 1 μA IDSS ensure long-term blocking integrity under high-humidity, high-temperature conditions.

Server Power Supply

Induction Heating Inverter

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW server PSUs using active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage N-channel switch handling 400 V DC bus with 100–200 kHz PWM.

Use Value: 1.5 Ω R_DS(on) and 20 nC Q_g reduce combined conduction + switching losses below 1.2 W at full load.

Use Scenario: Half-bridge leg in 10–20 kHz resonant induction heater driving 10–50 kW loads.

IC Role / Device Role / Timing Role: Medium-power switching element in high-current, high-dV/dt inverter stage.

Use Value: 24 V/ns dV/dt rating and 28.8 mJ E_AS prevent false triggering and withstand voltage spikes during zero-crossing transitions.

Welding Power Stage

Battery Charger Output Switch

Use Scenario: Output chopper in IGBT-gated arc welding inverters requiring fast, rugged switching at 15–30 kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling duty cycle of primary transformer current.

Use Value: 5.3 A continuous ID and 10 A pulsed IDM support 300–500 A weld currents via current multiplication.

Use Scenario: Isolation switch in 48 V–600 V multi-stage EV battery charger DC link.

IC Role / Device Role / Timing Role: High-reliability main DC switch enabling safe maintenance isolation and fault clearing.

Use Value: 500 V V_DS and 1 μA IDSS ensure long-term blocking integrity under high-humidity, high-temperature conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, 1.5 Ω R_DS(on), 35 nC Q_g, TO-220FP package	Higher gate charge increases driver loss; through-hole mounting limits board density	Prefer when legacy TO-220 layout exists and thermal mass > PCB heatsinking
IRFBC40APBF	500 V, 5.4 A, 1.2 Ω R_DS(on), 25 nC Q_g, TO-220 package	Higher Q_g and larger footprint; no halogen-free certification	Select only if cost sensitivity outweighs RoHS compliance and surface-mount requirements

Compared with STP5NK50ZFP and IRFBC40APBF, SIHD5N50D-GE3 offers lower Q_g, DPAK surface-mount compatibility, and halogen-free construction-making it optimal for space-constrained, high-volume industrial power modules requiring regulatory alignment and thermal efficiency.

Availability

SIHD5N50D-GE3 is available at Aetrix Electronics and suitable for server SMPS, induction heating inverters, and industrial welding equipment requiring stable component supply, long-lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for SIHD5N50D-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The D Series power MOSFETs-including SIHD5N50D-GE3-are engineered for high-voltage, medium-current switching in industrial and telecom infrastructure, emphasizing avalanche ruggedness, low FOM, and thermally efficient DPAK packaging.

FAQ

What is the maximum continuous drain current for SIHD5N50D-GE3 at 100 °C case temperature?

The SIHD5N50D-GE3 supports 3.4 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and ensures safe operation without exceeding 150 °C junction temperature. The SIHD5N50D-GE3 must be mounted on adequate copper area to maintain this rating.

Does SIHD5N50D-GE3 have avalanche energy rating, and how is it specified?

Yes, SIHD5N50D-GE3 is rated for 28.8 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, and I_AS = 5 A. This rating confirms ruggedness against inductive switching transients. The SIHD5N50D-GE3 does not specify repetitive avalanche capability.

What is the gate threshold voltage range for SIHD5N50D-GE3, and why does it matter?

The SIHD5N50D-GE3 has a V_GS(th) range of 3–5 V at T_J = 25 °C and I_D = 250 μA. This ensures predictable turn-on with standard 5 V or 10 V gate drivers while avoiding accidental activation near system noise margins. The SIHD5N50D-GE3 remains fully enhanced above 10 V, delivering its specified 1.5 Ω R_DS(on).

Can SIHD5N50D-GE3 be used in place of logic-level MOSFETs?

No-SIHD5N50D-GE3 is not a logic-level device. Its V_GS(th) starts at 3 V but requires 10 V for full enhancement and minimal R_DS(on). It is incompatible with 3.3 V microcontroller outputs without level-shifting. For true logic-level operation, select devices explicitly marked "logic-level" or with V_GS(th) ≤ 2.5 V. The SIHD5N50D-GE3 is designed for 10 V gate drive systems.

What thermal resistance values apply to SIHD5N50D-GE3, and how do they impact layout?

The SIHD5N50D-GE3 has R_thJC = 1.2 °C/W (junction-to-case) and R_thJA = 62 °C/W (junction-to-ambient, no heatsink). Effective thermal design requires soldering the exposed drain pad to ≥ 250 mm² of 2 oz copper with thermal vias. Without proper layout, ambient-rated power dissipation drops sharply. The SIHD5N50D-GE3 relies on PCB conduction-not air convection-for thermal management.

SIHD5N50D-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 325 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

SIHD5N50D-GE3 FAQ

1.How can I place an order for SIHD5N50D-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD5N50D-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD5N50D-GE3 reliable?

The price and inventory of SIHD5N50D-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD5N50D-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD5N50D-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD5N50D-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD5N50D-GE3?

SIHD5N50D-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD5N50D-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD5N50D-GE3?

For technical support, including SIHD5N50D-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD5N50D-GE3 requirements.

6.How does Aetrix verify that SIHD5N50D-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD5N50D-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD5N50D-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD5N50D-GE3?

All SIHD5N50D-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD5N50D-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD5N50D-GE3 part is unused and in its original packaging.

Return procedure for SIHD5N50D-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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