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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD690N60E-GE3

Name: SIHD690N60E-GE3
Brand: Vishay Siliconix
SKU: SIHD690N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD690N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD690N60E-GE3.pdf

Description:: MOSFET N-CH 600V 6.4A DPAK

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Product details

Overview

SIHD690N60E-GE3 from Vishay Siliconix is a 600 V, 6.4 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring 0.60 Ω R_DS(on) at V_GS = 10 V, 12 nC total gate charge, and avalanche-rated operation. It delivers low conduction and switching losses for high-efficiency power conversion in server PSUs and PFC stages.

For engineers reviewing the SIHD690N60E-GE3 datasheet, SIHD690N60E-GE3 pinout, SIHD690N60E-GE3 application, or SIHD690N60E-GE3 equivalent, key selection criteria include its 600 V V_DS, 0.60 Ω on-resistance at 10 V drive, 12 nC Q_g, 9 mJ single-pulse avalanche energy, and DPAK thermal performance with R_thJC = 2.0 °C/W.

Technical Context

This E-series MOSFET employs 4th-generation silicon technology optimized for high-voltage SMPS topologies. Its low figure-of-merit (R_DS(on) × Q_g = 7.2 Ω·nC) and reduced effective output capacitance (C_oss(er) = 17 pF) enable fast switching with minimized voltage overshoot and ringing in hard-switched converters.

The device integrates an intrinsic body diode rated for 6.4 A continuous source-drain current and 146 ns typical reverse recovery time at 25 °C. Its 70 V/ns dv/dt rating at T_J = 125 °C supports robust operation in noisy industrial environments without spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in PFC and 380–400 V in telecom rectifiers with margin.
R_DS(on) max	0.70 Ω at 25 °C, V_GS = 10 V - Ensures <1.8 W conduction loss at 6.4 A, enabling compact heatsinking in 1U server PSUs.
Q_g max	12 nC - Enables efficient gate driving with standard 1-A peak drivers at 100–300 kHz switching frequencies.
E_AS	9 mJ - Supports unclamped inductive switching in motor drives and welders without external snubbers.
R_thJC	2.0 °C/W - Allows 62.5 W power dissipation with ≤125 °C junction rise over case, suitable for surface-mount thermal pads.
I_D cont	6.4 A at T_C = 25 °C - Rated for continuous operation in 300–500 W isolated DC/DC stages with forced air cooling.
V_GS(th)	3.0–5.0 V - Compatible with standard 5 V and 10 V gate drivers; avoids false turn-on under noise transients.

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; standard 3-pin surface-mount footprint compatible with IPC-7351B SO-252A land pattern.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal to fully enhance channel; 3 nC Q_gs enables rapid turn-on with minimal driver stress.
D (Drain)	High-side power terminal	Connected to DC bus or transformer primary; electrically tied to exposed copper pad for low-inductance thermal path to PCB.
S (Source)	Reference and return path	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current (I_RRM = 13 A).

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	7.2 Ω·nC - Reduces combined conduction + switching losses by >15% vs. prior-gen 600 V MOSFETs at 200 kHz.
Avalanche energy rating	9 mJ single-pulse - Eliminates need for external clamping in flyback and resonant LLC primary switches.
Low C_oss(er)	17 pF - Minimizes turn-off loss and improves light-load efficiency in ZVS/ZCS circuits.
Body diode t_rr	146 ns typical - Enables reliable synchronous rectification in secondary-side applications without external Schottky.
Pb-free/halogen-free	JEDEC-compliant DPAK with matte tin lead finish - Meets RoHS 2011/65/EU and REACH SVHC requirements.

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 80 PLUS Titanium 1 kW AC/DC front-end with interleaved PFC + LLC resonant stage. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer into boost inductor; operates at 100–200 kHz with zero-voltage switching. Use Value: 0.60 Ω R_DS(on) and 12 nC Q_g reduce conduction loss by 0.9 W and switching loss by 0.4 W per device vs. legacy 650 V MOSFETs.	Use Scenario: Output rectification and isolation in -48 V telecom DC/DC modules with active clamp forward topology. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes; driven by transformer-coupled gate signals with precise timing control. Use Value: Body diode t_rr = 146 ns and V_SD = 1.2 V enable 3.2% efficiency gain at 50% load vs. 45 V Schottky solutions.
Industrial Motor Drives	Solar PV Inverters
Use Scenario: IGBT replacement in 3 kW three-phase inverter half-bridge legs for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Hard-switched power switch in 6–16 kHz PWM inverters; handles repetitive inductive loads with integrated avalanche capability. Use Value: 9 mJ E_AS withstands 100% rated current short-circuit events for ≥1 μs without failure, reducing system protection complexity.	Use Scenario: DC link switching in string-level 5–10 kW microinverters with dual-stage architecture (boost + H-bridge). IC Role / Device Role / Timing Role: Boost switch operating at 40–80 kHz; subjected to high dv/dt during MPPT transients and grid fault conditions. Use Value: 70 V/ns dv/dt rating at 125 °C prevents parasitic turn-on during 10 kV/μs common-mode noise events in rooftop installations.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 80 PLUS Titanium 1 kW AC/DC front-end with interleaved PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer into boost inductor; operates at 100–200 kHz with zero-voltage switching.

Use Value: 0.60 Ω R_DS(on) and 12 nC Q_g reduce conduction loss by 0.9 W and switching loss by 0.4 W per device vs. legacy 650 V MOSFETs.

Use Scenario: Output rectification and isolation in -48 V telecom DC/DC modules with active clamp forward topology.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes; driven by transformer-coupled gate signals with precise timing control.

Use Value: Body diode t_rr = 146 ns and V_SD = 1.2 V enable 3.2% efficiency gain at 50% load vs. 45 V Schottky solutions.

Industrial Motor Drives

Solar PV Inverters

Use Scenario: IGBT replacement in 3 kW three-phase inverter half-bridge legs for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Hard-switched power switch in 6–16 kHz PWM inverters; handles repetitive inductive loads with integrated avalanche capability.

Use Value: 9 mJ E_AS withstands 100% rated current short-circuit events for ≥1 μs without failure, reducing system protection complexity.

Use Scenario: DC link switching in string-level 5–10 kW microinverters with dual-stage architecture (boost + H-bridge).

IC Role / Device Role / Timing Role: Boost switch operating at 40–80 kHz; subjected to high dv/dt during MPPT transients and grid fault conditions.

Use Value: 70 V/ns dv/dt rating at 125 °C prevents parasitic turn-on during 10 kV/μs common-mode noise events in rooftop installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 5.5 A, R_DS(on) = 0.75 Ω, Q_g = 14 nC, TO-220FP package	Higher R_DS(on) and larger through-hole package limit power density in space-constrained telecom modules.	Preferred where through-hole mounting and higher surge tolerance are prioritized over board area and thermal resistance.
IXTP50N10P	100 V, 50 A, R_DS(on) = 0.022 Ω, Q_g = 42 nC, TO-220 package	Lower voltage rating excludes use in 400 V+ DC bus applications; higher Q_g increases gate drive loss at >100 kHz.	Only suitable for low-voltage (<150 V) battery-fed inverters or DC/DC where conduction loss dominates.

Compared with STP6NK60ZFP and IXTP50N10P, SIHD690N60E-GE3 offers superior power density via DPAK packaging, lower R_DS(on) × Q_g, and verified avalanche ruggedness-making it optimal for compact, high-frequency 600 V SMPS designs requiring repeatable reliability under transient stress.

Availability

SIHD690N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, industrial motor drives, and solar PV inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHD690N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHD690N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in 400–600 V industrial and communications power systems.

FAQ

What is the maximum continuous drain current rating for SIHD690N60E-GE3 at 100 °C case temperature?

The SIHD690N60E-GE3 supports 4.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and ensures safe operation when mounted on standard 2 oz copper PCBs with adequate copper area. The SIHD690N60E-GE3 maintains stable R_DS(on) performance up to 150 °C junction temperature.

Does SIHD690N60E-GE3 have avalanche capability, and how is it rated?

Yes, SIHD690N60E-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 9 mJ under standardized test conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 0.8 A). This rating is validated per JEDEC JESD24-1 and confirms robustness against inductive kickback in motor drive and welding applications. The SIHD690N60E-GE3 does not require external avalanche snubbers in properly designed layouts.

What is the gate threshold voltage range for SIHD690N60E-GE3, and how does it affect drive compatibility?

The SIHD690N60E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at I_D = 250 μA, ensuring reliable turn-on with standard 5 V logic-level drivers while preventing false triggering from noise. This V_GS(th) window allows direct interface with microcontroller GPIOs and dedicated gate drivers like the UCC27531 without level-shifting. The SIHD690N60E-GE3 achieves full enhancement at V_GS = 10 V, delivering its rated 0.60 Ω R_DS(on).

How does the body diode performance of SIHD690N60E-GE3 compare to discrete Schottky diodes in PFC applications?

The SIHD690N60E-GE3 body diode exhibits 1.2 V forward voltage at 2.0 A and 25 °C, with 146 ns typical reverse recovery time (t_rr) and 1.0–2.0 μC Q_rr. While higher V_F than Schottkys, its controlled t_rr and soft recovery reduce EMI and voltage spikes in critical PFC boost diodes. In cost-sensitive, thermally constrained designs, the SIHD690N60E-GE3 eliminates a separate diode component, simplifying layout and improving reliability. The SIHD690N60E-GE3 body diode is not intended for continuous freewheeling but excels in synchronous rectification roles.

Is SIHD690N60E-GE3 suitable for use in automotive-grade power modules?

No, SIHD690N60E-GE3 is not qualified to AEC-Q101 or automotive PPAP requirements. It is rated for industrial and commercial temperature ranges (–55 °C to +150 °C), but lacks automotive-specific qualification testing for vibration, humidity, and long-term HTOL. For automotive applications such as OBC or DC/DC converters, Vishay offers the SQ series (e.g., SQM60N06-10L) with full AEC-Q101 certification. The SIHD690N60E-GE3 remains appropriate for industrial, telecom, and renewable energy systems where extended temperature operation is required without automotive qualification.

SIHD690N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 700mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 347 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD690N60E-GE3 FAQ

1.How can I place an order for SIHD690N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD690N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD690N60E-GE3 reliable?

The price and inventory of SIHD690N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD690N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD690N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD690N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD690N60E-GE3?

SIHD690N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD690N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD690N60E-GE3?

For technical support, including SIHD690N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD690N60E-GE3 requirements.

6.How does Aetrix verify that SIHD690N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD690N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD690N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD690N60E-GE3?

All SIHD690N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD690N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD690N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHD690N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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