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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD6N62E-GE3

Name: SIHD6N62E-GE3
Brand: Vishay Siliconix
SKU: SIHD6N62E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD6N62E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD6N62E-GE3.pdf

Description:: MOSFET N-CH 620V 6A DPAK

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Product details

Overview

SIHD6N62E-GE3 from Vishay Siliconix is a 620 V, 6 A N-channel DPAK (TO-252) power MOSFET optimized for high-voltage switching in SMPS and PFC stages, featuring R_DS(on) = 0.9 Ω at V_GS = 10 V, Q_g = 34 nC, and avalanche-rated E_AS = 88 mJ - deployed in telecom rectifiers and solar PV inverters.

For engineers reviewing the SIHD6N62E-GE3 datasheet, SIHD6N62E-GE3 pinout, SIHD6N62E-GE3 application, or SIHD6N62E-GE3 equivalent, key selection criteria include its 620 V V_DS, low gate charge for ZVS/ZCS compatibility, rugged body diode with t_rr = 190 ns, and DPAK thermal resistance R_thJC = 1.6 °C/W for high-power density designs.

Technical Context

This device uses planar vertical DMOS technology with an integrated ultra-fast recovery body diode, enabling hard-switched operation up to 100 kHz in continuous conduction mode (CCM) PFC. Its low C_iss = 578 pF and C_oss = 36 pF support reduced capacitive losses during turn-off transitions.

The MOSFET operates with V_GS(th) = 2–4 V and exhibits positive V_DS temperature coefficient (0.76 V/°C), supporting current sharing in parallel configurations. It is rated for repetitive unclamped inductive switching (UIS) and meets industrial-grade TJ = –55 to +150 °C operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - supports 400 V AC input rectified to ~565 V DC bus with 10 % margin for surge and ripple.
R_DS(on) max	0.9 Ω at V_GS = 10 V - limits conduction loss to ≤ 8.1 W at 3 A ID, enabling compact heatsinking.
Q_g max	34 nC - enables efficient gate drive with <1 W driver power at 100 kHz switching frequency.
E_AS	88 mJ - withstands single-pulse inductive energy without failure in flyback or LLC resonant snubbers.
t_rr	190 ns - minimizes reverse recovery loss and dI/dt-induced voltage overshoot in bridge-leg commutation.
R_thJC	1.6 °C/W - allows >40 W dissipation with 65 °C case rise, suitable for thermally constrained DPAK layouts.
I_D cont.	6 A at T_C = 25 °C - defines maximum steady-state current under ideal heatsink conditions.

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H), lead (Pb)-free and halogen-free per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; requires <34 nC charge for full enhancement; sensitive to ESD (±30 V rating).
D (Drain)	High-side power terminal	Connected to HV DC bus; electrically tied to exposed copper pad for thermal path to PCB ground plane.
S (Source)	Power return and reference node	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery current.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	0.9 Ω × 34 nC = 30.6 Ω·nC - improves trade-off between conduction and switching loss in high-frequency PFC.
Avalanche energy rating	88 mJ single-pulse - eliminates need for external clamping in inductive load switching and fault transients.
Ultra-low Q_gd/Q_g ratio	8/34 ≈ 24 % - reduces Miller effect, enabling stable high-dV/dt operation up to 37 V/ns.
Fast body diode recovery	t_rr = 190 ns, Q_rr = 1.3 μC - lowers commutation loss in half-bridge and synchronous rectifier topologies.
High dV/dt immunity	37 V/ns at T_J = 125 °C - prevents false turn-on in high-noise HV environments like motor drives and inverters.

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1 kW+ server PSU modules. IC Role / Device Role / Timing Role: High-side HV switching element handling 400–600 V DC bus with 100–300 kHz switching. Use Value: Low Q_g and C_iss reduce gate drive loss and EMI generation; R_thJC = 1.6 °C/W sustains efficiency at 70 °C ambient.	Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in two-level or three-level NPC topologies operating at 16–20 kHz. Use Value: 620 V rating accommodates 1000 V DC strings with safety margin; avalanche rating handles lightning-induced surges.
Industrial Motor Drive	Fluorescent Ballast
Use Scenario: Inverter leg switch in 0.75–2.2 kW variable frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: Phase-leg power switch in 6-step or SVM-controlled three-phase output stage. Use Value: Body diode t_rr = 190 ns ensures clean freewheeling during PWM dead-time; V_DS tempco enables safe paralleling.	Use Scenario: Resonant half-bridge switch in electronic fluorescent ballasts driving 32–40 W lamps. IC Role / Device Role / Timing Role: High-frequency (25–65 kHz) switching transistor in series-resonant tank circuit. Use Value: Low C_oss = 36 pF minimizes capacitive current in zero-voltage switching; DPAK footprint fits compact lamp control PCBs.

Server Power Supply

Solar PV Inverter

Use Scenario: Active clamp forward or LLC resonant converter primary switch in 1 kW+ server PSU modules.

IC Role / Device Role / Timing Role: High-side HV switching element handling 400–600 V DC bus with 100–300 kHz switching.

Use Value: Low Q_g and C_iss reduce gate drive loss and EMI generation; R_thJC = 1.6 °C/W sustains efficiency at 70 °C ambient.

Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in two-level or three-level NPC topologies operating at 16–20 kHz.

Use Value: 620 V rating accommodates 1000 V DC strings with safety margin; avalanche rating handles lightning-induced surges.

Industrial Motor Drive

Fluorescent Ballast

Use Scenario: Inverter leg switch in 0.75–2.2 kW variable frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: Phase-leg power switch in 6-step or SVM-controlled three-phase output stage.

Use Value: Body diode t_rr = 190 ns ensures clean freewheeling during PWM dead-time; V_DS tempco enables safe paralleling.

Use Scenario: Resonant half-bridge switch in electronic fluorescent ballasts driving 32–40 W lamps.

IC Role / Device Role / Timing Role: High-frequency (25–65 kHz) switching transistor in series-resonant tank circuit.

Use Value: Low C_oss = 36 pF minimizes capacitive current in zero-voltage switching; DPAK footprint fits compact lamp control PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V V_DS, R_DS(on) = 1.2 Ω, Q_g = 27 nC, TO-220FP package	Higher R_DS(on) increases conduction loss; through-hole mounting limits board density	Preferred where legacy TO-220 layout exists and lower gate charge outweighs higher on-resistance.
IXTH6N60P	600 V V_DS, R_DS(on) = 1.4 Ω, Q_g = 22 nC, TO-247 package	Larger TO-247 offers better thermal performance but occupies 3× PCB area vs. DPAK	Chosen when >60 W dissipation is required and board space permits larger footprint.

Compared with STP6NK60ZFP and IXTH6N60P, SIHD6N62E-GE3 delivers superior power density via DPAK packaging, tighter 620 V rating for higher DC bus margin, and lower R_DS(on) for improved efficiency in space-constrained 1–3 kW converters.

Availability

SIHD6N62E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHD6N62E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.

The SIHD6N62E-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered for efficiency-critical switching applications in telecom, renewable energy, and industrial power conversion where high V_DS, low Q_g, and robust UIS capability are essential.

FAQ

What is the maximum continuous drain current rating for SIHD6N62E-GE3 at 100 °C case temperature?

The SIHD6N62E-GE3 has a maximum continuous drain current of 4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; at T_C = 25 °C, it supports 6 A. Designers must verify PCB copper area and airflow to maintain case temperature within this limit during operation.

Does SIHD6N62E-GE3 support logic-level gate drive?

No, SIHD6N62E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, but full enhancement requires V_GS = 10 V to achieve R_DS(on) ≤ 0.9 Ω. Driving it with 5 V logic will result in significantly higher on-resistance and conduction loss; a dedicated 10–15 V gate driver is required for optimal performance of SIHD6N62E-GE3.

What is the significance of the "-GE3" suffix in SIHD6N62E-GE3?

Per Vishay's ordering nomenclature, the "-GE3" suffix indicates lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU and JEDEC JS709A. It also denotes tape-and-reel packaging per EIA-481 standard, with 2,500 units per reel - the standard shipping format for SIHD6N62E-GE3 used in automated SMT assembly lines.

How does the body diode performance of SIHD6N62E-GE3 compare to standard FRDs?

The SIHD6N62E-GE3 body diode has t_rr = 190 ns and Q_rr = 1.3 μC at I_F = 3 A, making it faster than typical standard recovery diodes but slower than dedicated ultrafast FRDs. Its soft recovery characteristic minimizes voltage overshoot, and it is rated for IS = 7 A continuous - sufficient for freewheeling in non-synchronous buck or flyback converters where SIHD6N62E-GE3 serves as the main switch.

Can SIHD6N62E-GE3 be used in parallel configurations?

Yes, SIHD6N62E-GE3 supports parallel operation due to its positive V_DS temperature coefficient (0.76 V/°C), which promotes current sharing as junction temperature rises. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling; Vishay recommends using individual gate resistors and Kelvin source connections to ensure balanced switching of each SIHD6N62E-GE3 device.

SIHD6N62E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 900mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 578 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD6N62E-GE3 FAQ

1.How can I place an order for SIHD6N62E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD6N62E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD6N62E-GE3 reliable?

The price and inventory of SIHD6N62E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD6N62E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD6N62E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD6N62E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD6N62E-GE3?

SIHD6N62E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD6N62E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD6N62E-GE3?

For technical support, including SIHD6N62E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD6N62E-GE3 requirements.

6.How does Aetrix verify that SIHD6N62E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD6N62E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD6N62E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD6N62E-GE3?

All SIHD6N62E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD6N62E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD6N62E-GE3 part is unused and in its original packaging.

Return procedure for SIHD6N62E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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