Vishay Siliconix SIHD6N65E-GE3

Overview

SIHD6N65E-GE3 from Vishay Siliconix is a 650 V, 7 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 0.6 Ω R_DS(on) at V_GS = 10 V, 48 nC total gate charge, and 56 mJ single-pulse avalanche energy - designed for high-efficiency switching in PFC and SMPS stages of server and telecom power supplies.

For engineers reviewing the SIHD6N65E-GE3 datasheet, SIHD6N65E-GE3 pinout, SIHD6N65E-GE3 application, or SIHD6N65E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low Q_g, and robust UIS rating - critical for hard-switched, high-voltage DC-DC and AC-DC converter designs requiring reliable conduction and switching loss trade-offs.

Technical Context

This device employs a planar high-voltage trench-gated structure optimized for 650 V operation with controlled dV/dt immunity (37 V/ns at T_J = 125 °C) and integrated body diode rated for 7 A continuous source-drain current. Its gate threshold voltage (2–4 V) ensures stable turn-on under wide temperature and drive conditions.

The MOSFET delivers low C_iss (820 pF typ.) and minimized C_oss (40 pF typ.), enabling fast switching with reduced capacitive losses. Its R_thJC of 1.6 °C/W supports high-power-density thermal management when mounted on copper-clad PCBs or heatsinks.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (max height), compatible with IPC-7351B SO-252 footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP6NK60ZFP, SIHD6N65E-GE3 offers higher voltage headroom and lower conduction loss but requires tighter gate drive control due to higher Q_g; compared with IXTP50N10P, it is not substitutable - the latter serves entirely different low-voltage, high-current use cases.

Availability

SIHD6N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, lead-free compliance, and consistent DPAK packaging across production batches.

Supply support for SIHD6N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and ruggedized packaging.

The E Series power MOSFETs - including SIHD6N65E-GE3 - were engineered for high-efficiency, high-voltage switching in industrial and communications power conversion, prioritizing low FOM, avalanche robustness, and surface-mount thermal performance.

FAQ

What is the maximum continuous drain current rating for SIHD6N65E-GE3 at 100 °C case temperature?

The SIHD6N65E-GE3 has a maximum continuous drain current (I_D) of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects linear derating from 7 A at 25 °C using the 0.63 W/°C factor. At elevated temperatures, thermal design must ensure the junction stays within –55 to +150 °C to maintain reliability and avoid R_DS(on) drift. The SIHD6N65E-GE3 datasheet confirms this limit applies under steady-state conduction with proper PCB copper area.

Does SIHD6N65E-GE3 support logic-level gate drive?

No, SIHD6N65E-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, but full enhancement and guaranteed R_DS(on) ≤ 0.6 Ω require V_GS = 10 V. It is designed for standard 10 V gate drive, not 3.3 V or 5 V microcontroller outputs. Using insufficient gate voltage risks incomplete turn-on, excessive conduction loss, and thermal runaway. The SIHD6N65E-GE3 specification explicitly states R_DS(on) is characterized at V_GS = 10 V.

What is the significance of the "-GE3" suffix in SIHD6N65E-GE3?

The "-GE3" suffix in SIHD6N65E-GE3 indicates a lead (Pb)-free and halogen-free version in tape-and-reel packaging compliant with RoHS Directive 2011/65/EU and Vishay's material categorization standard. It corresponds to the DPAK (TO-252) package variant with matte tin plating and green molding compound. The SIHD6N65E-GE3 ordering information confirms this is the standard commercial-grade, Pb-free, halogen-free option - distinct from -T1, -T4, or -T5 variants which differ only in reel size and packaging format.

Can SIHD6N65E-GE3 replace older 600 V MOSFETs like STP6NK60Z in existing designs?

SIHD6N65E-GE3 is not a direct drop-in replacement for STP6NK60Z due to differences in voltage rating (650 V vs. 600 V), R_DS(on) (0.6 Ω vs. 0.75 Ω), and package thermal resistance (1.6 °C/W vs. ~2.5 °C/W for TO-220FP). While it offers improved voltage margin and lower conduction loss, gate charge is higher (48 nC vs. 32 nC), potentially requiring gate driver re-evaluation. The SIHD6N65E-GE3 pinout matches DPAK footprints, not TO-220, so PCB layout change is mandatory - making it a redesign candidate, not a drop-in swap.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHD6N65E-GE3?

The typical reverse recovery charge (Q_rr) of the integral body diode in SIHD6N65E-GE3 is 2.2 μC, measured at T_J = 25 °C, I_F = I_S = 3 A, dI/dt = 100 A/μs, and V_R = 25 V. This value directly impacts commutation losses in half-bridge and synchronous rectifier applications. The SIHD6N65E-GE3 datasheet specifies Q_rr in the Dynamic Characteristics table and correlates it with t_rr = 237 ns - enabling accurate loss modeling for hard-switched topologies.