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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD6N65ET1-GE3

Name: SIHD6N65ET1-GE3
Brand: Vishay Siliconix
SKU: SIHD6N65ET1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD6N65ET1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD6N65ET1-GE3.pdf

Description:: MOSFET N-CH 650V 7A TO252AA

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Product details

Overview

SIHD6N65ET1-GE3 from Vishay Siliconix is a 650 V, 7 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 0.6 Ω at V_GS = 10 V, Q_g = 48 nC, and avalanche-rated (E_AS = 56 mJ). It serves as a high-voltage switching element in offline SMPS, PFC stages, and solar inverters.

For engineers reviewing the SIHD6N65ET1-GE3 datasheet, SIHD6N65ET1-GE3 pinout, SIHD6N65ET1-GE3 application, or SIHD6N65ET1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJC = 1.6 °C/W), body diode recovery (t_rr = 237 ns), gate charge profile, and real-world use context for high-efficiency power conversion designs.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching applications. Its low C_iss (820 pF) and ultra-low Q_gd/Q_g ratio (11/48 nC) reduce Miller-induced turn-off delay and improve controllability under high dV/dt conditions up to 37 V/ns.

The integrated body diode supports synchronous rectification and unclamped inductive switching with validated reverse recovery (Q_rr = 2.2 μC, I_RRM = 16 A) and rated UIS capability-critical for PFC boost and motor drive freewheeling paths where voltage overshoot must be managed without snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V AC input rectified systems with 30 % safety margin for transient overvoltage in telecom/server PSUs
R_DS(on) max	0.6 Ω at V_GS = 10 V - enables <1.8 W conduction loss at 3 A DC, suitable for continuous 5–7 A operation with heatsinking
Q_g max	48 nC - determines gate driver current requirement (~1.2 A peak for 40 ns rise time), critical for ZVS/ZCS soft-switching timing
E_AS	56 mJ - specifies single-pulse avalanche energy handling without failure, enabling robustness in inductive load switching
t_r/t_f	12–24 ns / 20–40 ns - fast switching transitions minimize overlap loss in hard-switched topologies like LLC resonant converters
R_thJC	1.6 °C/W - allows ~49 W power dissipation with 78 °C case-to-ambient ΔT, supporting compact heatsink integration in DPAK footprint
I_D continuous	7 A at T_C = 25 °C - defines maximum steady-state current before thermal derating begins at 0.63 W/°C above 25 °C

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H), compatible with IPC-7351B SO-252A land pattern.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires 10 V drive for full enhancement; ±30 V absolute max rating prevents oxide damage
Pin 2 (D)	Drain	Main high-side switching node; electrically connected to exposed copper pad for thermal path and high-current routing
Pin 3 (S)	Source	Reference node for gate drive and current sensing; ties to power ground plane; carries full load current and body diode return path

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	360 Ω·nC - directly improves efficiency in high-frequency SMPS by reducing combined conduction + switching loss
Avalanche-rated (UIS)	56 mJ single-pulse rating - eliminates need for external clamping in flyback/PFC circuits with inductive energy storage
Ultra-low Q_gd	11 nC - minimizes Miller plateau duration, enabling faster turn-off and improved noise immunity in noisy EMI environments
Low C_iss	820 pF - reduces gate drive power consumption and improves high-frequency stability in gate-loop design
Body diode t_rr	237 ns - enables reliable freewheeling in half-bridge configurations without cross-conduction risk when paired with proper dead-time

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switch in 80+ Titanium-certified 1 kW server PSU using active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching device operating at 100–300 kHz with 520 V bus voltage and 7 A peak current. Use Value: Low Q_g and fast t_f reduce switching losses by >15 % vs. legacy 650 V MOSFETs, improving full-load efficiency to ≥96 %.	Use Scenario: DC-link switch in string-level PV inverter boost stage handling 1000 V DC input and 15 A RMS output. IC Role / Device Role / Timing Role: Unidirectional high-side switch in interleaved PFC with 650 V blocking capability and 237 ns body diode recovery. Use Value: Avalanche rating ensures reliability during grid fault transients; R_thJC = 1.6 °C/W enables direct mounting to aluminum baseplate without thermal interface material.
Industrial Motor Drive	HID Lighting Ballast
Use Scenario: Inverter leg switch in 3 kW brushless DC motor drive operating from 400 V DC bus with 10 kHz PWM. IC Role / Device Role / Timing Role: N-channel high-side switch in three-phase bridge with 650 V V_DS, 7 A I_D, and 37 V/ns dV/dt immunity. Use Value: Low C_oss (40 pF) and controlled dV/dt reduce EMI generation, easing EMC compliance in factory automation environments.	Use Scenario: Resonant switch in electronic HID ballast for 400 W metal halide lamp with 600 V ignition pulse. IC Role / Device Role / Timing Role: Hard-switched main transistor in LCC resonant tank, conducting 3 A average current at 250 kHz with 1.3 V body diode drop. Use Value: V_SD = 1.3 V at 3 A reduces conduction loss in bidirectional current paths during lamp warm-up phase.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switch in 80+ Titanium-certified 1 kW server PSU using active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching device operating at 100–300 kHz with 520 V bus voltage and 7 A peak current.

Use Value: Low Q_g and fast t_f reduce switching losses by >15 % vs. legacy 650 V MOSFETs, improving full-load efficiency to ≥96 %.

Use Scenario: DC-link switch in string-level PV inverter boost stage handling 1000 V DC input and 15 A RMS output.

IC Role / Device Role / Timing Role: Unidirectional high-side switch in interleaved PFC with 650 V blocking capability and 237 ns body diode recovery.

Use Value: Avalanche rating ensures reliability during grid fault transients; R_thJC = 1.6 °C/W enables direct mounting to aluminum baseplate without thermal interface material.

Industrial Motor Drive

HID Lighting Ballast

Use Scenario: Inverter leg switch in 3 kW brushless DC motor drive operating from 400 V DC bus with 10 kHz PWM.

IC Role / Device Role / Timing Role: N-channel high-side switch in three-phase bridge with 650 V V_DS, 7 A I_D, and 37 V/ns dV/dt immunity.

Use Value: Low C_oss (40 pF) and controlled dV/dt reduce EMI generation, easing EMC compliance in factory automation environments.

Use Scenario: Resonant switch in electronic HID ballast for 400 W metal halide lamp with 600 V ignition pulse.

IC Role / Device Role / Timing Role: Hard-switched main transistor in LCC resonant tank, conducting 3 A average current at 250 kHz with 1.3 V body diode drop.

Use Value: V_SD = 1.3 V at 3 A reduces conduction loss in bidirectional current paths during lamp warm-up phase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, R_DS(on) = 0.75 Ω, Q_g = 32 nC, TO-220FP package	Higher R_DS(on) increases conduction loss; lower Q_g eases gate drive but lacks avalanche rating	Prefer for cost-sensitive industrial supplies where layout allows larger heatsink and avalanche stress is absent
IXTP50N10P	100 V, R_DS(on) = 0.022 Ω, Q_g = 95 nC, TO-220 package	Lower voltage rating precludes use in 400 V AC systems; higher Q_g demands stronger gate driver	Only viable in low-voltage DC-DC stages downstream of PFC; not a functional substitute for SIHD6N65ET1-GE3

Compared with STP6NK60ZFP and IXTP50N10P, SIHD6N65ET1-GE3 uniquely balances 650 V rating, 0.6 Ω R_DS(on), and 56 mJ avalanche capability in DPAK-making it optimal for space-constrained, high-reliability PFC and solar inverter designs where voltage margin and ruggedness are non-negotiable.

Availability

SIHD6N65ET1-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHD6N65ET1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power components.

The E Series Power MOSFETs-including SIHD6N65ET1-GE3-are engineered for high-voltage, high-frequency switching in telecom, server, and renewable energy power conversion systems where low R_DS(on) × Q_g and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current for SIHD6N65ET1-GE3 at 100 °C case temperature?

The SIHD6N65ET1-GE3 supports 5 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating from 7 A at 25 °C reflects thermal limits of the DPAK package and ensures junction temperature remains ≤150 °C under sustained load. The linear derating factor is 0.63 W/°C, allowing precise thermal design for target ambient conditions.

Does SIHD6N65ET1-GE3 have a qualified avalanche rating, and how is it tested?

Yes, SIHD6N65ET1-GE3 is avalanche energy rated at E_AS = 56 mJ (single-pulse, test condition: V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2 A). This rating is validated per JEDEC JESD24-1 and confirms robustness against inductive switching stress without degradation-critical for PFC and flyback converter reliability.

What is the typical gate threshold voltage range for SIHD6N65ET1-GE3, and why does it matter?

The SIHD6N65ET1-GE3 has a V_GS(th) range of 2–4 V at T_J = 25 °C. This moderate threshold ensures reliable turn-on with standard 10 V gate drivers while avoiding accidental activation from noise or leakage currents. It also supports compatibility with both 5 V and 12 V control logic, provided sufficient overdrive is maintained for low R_DS(on).

How does the body diode performance of SIHD6N65ET1-GE3 compare to standard FRDs in PFC applications?

The SIHD6N65ET1-GE3 body diode exhibits t_rr = 237 ns, Q_rr = 2.2 μC, and V_SD = 1.3 V at 3 A. While slower than dedicated fast recovery diodes, its integrated nature eliminates parasitic inductance and simplifies layout in critical PFC boost diodes-especially where soft-switching or synchronous rectification is not implemented.

Is SIHD6N65ET1-GE3 lead (Pb)-free and halogen-free, and what is its RoHS status?

Yes, SIHD6N65ET1-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's Material Declaration per doc. #99912. The "-GE3" suffix explicitly denotes Green, lead-free, and halogen-free construction-verified through standardized XRF testing and material certifications traceable to Vishay's manufacturing lots.

SIHD6N65ET1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 820 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD6N65ET1-GE3 FAQ

1.How can I place an order for SIHD6N65ET1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD6N65ET1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD6N65ET1-GE3 reliable?

The price and inventory of SIHD6N65ET1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD6N65ET1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD6N65ET1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD6N65ET1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD6N65ET1-GE3?

SIHD6N65ET1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD6N65ET1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD6N65ET1-GE3?

For technical support, including SIHD6N65ET1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD6N65ET1-GE3 requirements.

6.How does Aetrix verify that SIHD6N65ET1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD6N65ET1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD6N65ET1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD6N65ET1-GE3?

All SIHD6N65ET1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD6N65ET1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD6N65ET1-GE3 part is unused and in its original packaging.

Return procedure for SIHD6N65ET1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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