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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD6N65ET4-GE3

Name: SIHD6N65ET4-GE3
Brand: Vishay Siliconix
SKU: SIHD6N65ET4-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD6N65ET4-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD6N65ET4-GE3.pdf

Description:: MOSFET N-CH 650V 7A TO252AA

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Product details

Overview

SIHD6N65ET4-GE3 from Vishay Siliconix is a 650 V, 7 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 0.6 Ω at V_GS = 10 V, Q_g = 48 nC, and avalanche-rated (E_AS = 56 mJ). It serves as a high-voltage switching element in PFC and primary-side SMPS stages for telecom and server power supplies.

For engineers reviewing the SIHD6N65ET4-GE3 datasheet, SIHD6N65ET4-GE3 pinout, SIHD6N65ET4-GE3 application, or SIHD6N65ET4-GE3 equivalent, key selection criteria include its 650 V V_DS, low gate charge for high-frequency hard-switching, rugged body diode (t_rr = 237 ns), and thermal resistance R_thJC = 1.6 °C/W enabling compact heatsink designs.

Technical Context

This MOSFET employs planar silicon technology optimized for high-voltage, medium-current switching with low conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while the low C_iss (820 pF) and C_oss (40 pF) support fast, efficient transitions in continuous conduction mode (CCM) PFC and LLC resonant converters.

The device integrates an ultra-low Q_gd/Q_g ratio (11/48 nC) to minimize Miller-induced switching instability, and its rated dV/dt capability (37 V/ns at T_J = 125 °C) supports robust operation in noisy high-di/dt environments such as welder inverters and solar PV string inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Supports 400 V DC bus with 1.6× safety margin for telecom rectified input and industrial 3-phase rectification
R_DS(on) max @ 10 V	0.6 Ω - Enables ≤ 12.6 W conduction loss at 7 A continuous drain current
Q_g max	48 nC - Reduces gate drive power requirement and enables >100 kHz switching in hard-switched topologies
E_AS	56 mJ - Withstands unclamped inductive energy during fault conditions without failure
R_thJC	1.6 °C/W - Allows direct mounting to heatsink for thermal management in space-constrained 1U server PSUs
t_rr	237 ns - Limits reverse recovery loss and EMI generation in bridge-leg configurations
I_D @ T_C = 100 °C	5 A - Specifies usable current derating for sustained operation in enclosed industrial enclosures

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; three-terminal surface-mount configuration requiring minimum recommended copper pad area of 6.18 mm × 5.69 mm per Vishay Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; requires <100 nF local decoupling to suppress ringing due to low Q_gd
D (Drain)	High-voltage output node	Connected to PCB copper pour for thermal dissipation; electrically tied to backside metal tab
S (Source)	Reference node / return path	Serves as common reference for gate driver and current sensing; must be low-inductance layout to avoid shoot-through risk

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	0.6 Ω × 48 nC = 28.8 Ω·nC - Optimized trade-off for high-efficiency 65–100 kHz PFC stages
Avalanche energy rating	56 mJ single-pulse - Eliminates need for external snubbers in flyback and forward converter primary switches
Ultra-low Q_gd	11 nC - Reduces Miller plateau duration and improves immunity to false turn-on in high-dV/dt half-bridge legs
Low C_iss	820 pF - Minimizes capacitive loading on gate driver ICs and reduces switching transition time
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile - Suitable for lead-free SMT assembly

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter operating at 100–300 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from bulk capacitor to transformer primary. Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >95% efficiency in 1U 2 kW units.	Use Scenario: Boost PFC stage in 3 kW telecom rectifier handling universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Fast-switching boost switch synchronizing with line frequency to shape input current waveform. Use Value: Avalanche rating and low t_rr prevent failure during transient overloads and improve THD performance.
Solar PV Inverter	Industrial Welder
Use Scenario: DC-link switch in string-level MPPT converter interfacing photovoltaic panels to central inverter. IC Role / Device Role / Timing Role: Medium-voltage switch regulating DC bus voltage under variable irradiance and temperature. Use Value: 650 V rating accommodates 1000 V PV arrays with safety margin; low C_oss minimizes dead-time losses.	Use Scenario: Inverter leg switch in IGBT-gated arc welding power supply delivering 200–500 A output. IC Role / Device Role / Timing Role: High-di/dt switching element in full-bridge topology driving high-frequency transformer. Use Value: Rated dV/dt (37 V/ns) and rugged body diode withstand rapid polarity reversal during short-circuit protection events.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter operating at 100–300 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from bulk capacitor to transformer primary.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >95% efficiency in 1U 2 kW units.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier handling universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Fast-switching boost switch synchronizing with line frequency to shape input current waveform.

Use Value: Avalanche rating and low t_rr prevent failure during transient overloads and improve THD performance.

Solar PV Inverter

Industrial Welder

Use Scenario: DC-link switch in string-level MPPT converter interfacing photovoltaic panels to central inverter.

IC Role / Device Role / Timing Role: Medium-voltage switch regulating DC bus voltage under variable irradiance and temperature.

Use Value: 650 V rating accommodates 1000 V PV arrays with safety margin; low C_oss minimizes dead-time losses.

Use Scenario: Inverter leg switch in IGBT-gated arc welding power supply delivering 200–500 A output.

IC Role / Device Role / Timing Role: High-di/dt switching element in full-bridge topology driving high-frequency transformer.

Use Value: Rated dV/dt (37 V/ns) and rugged body diode withstand rapid polarity reversal during short-circuit protection events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V V_DS, R_DS(on) = 0.75 Ω, Q_g = 32 nC, TO-220FP package	Lower voltage rating limits use to ≤380 V DC bus; through-hole mounting increases layout complexity	Select when cost sensitivity outweighs board space constraints and 600 V margin suffices
IXTH6N65X2	650 V V_DS, R_DS(on) = 0.65 Ω, Q_g = 36 nC, TO-247 package	Larger TO-247 footprint and higher R_thJC (0.83 °C/W) require larger heatsink but enable higher peak current	Select when >7 A pulsed current or enhanced thermal headroom is required despite larger PCB area

Compared with STP6NK60ZFP and IXTH6N65X2, SIHD6N65ET4-GE3 delivers optimal balance of 650 V rating, surface-mount DPAK packaging, and low Q_g/R_DS(on) FOM for space-constrained, high-efficiency 1–3 kW power supplies where thermal interface resistance and layout density are critical.

Availability

SIHD6N65ET4-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHD6N65ET4-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The E Series power MOSFETs, including SIHD6N65ET4-GE3, were designed specifically for high-efficiency, high-voltage switching in server PSUs, telecom rectifiers, and renewable energy systems where low gate charge and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current for SIHD6N65ET4-GE3 at 100 °C case temperature?

The SIHD6N65ET4-GE3 supports a continuous drain current of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and ensures safe operation within its 1.6 °C/W junction-to-case thermal resistance. Engineers must verify heatsink design and ambient conditions to maintain T_J ≤ 150 °C during full-load operation of the SIHD6N65ET4-GE3.

Does SIHD6N65ET4-GE3 have a fully rated avalanche capability?

Yes, the SIHD6N65ET4-GE3 is fully rated for single-pulse avalanche energy (E_AS) of 56 mJ under defined test conditions (V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2 A). This rating is validated per JEDEC standards and allows the SIHD6N65ET4-GE3 to safely absorb inductive energy during switching transients without requiring external clamping circuits in properly designed PFC and SMPS topologies.

What is the typical gate threshold voltage range for SIHD6N65ET4-GE3?

The SIHD6N65ET4-GE3 has a gate threshold voltage (V_GS(th)) range of 2 V to 4 V at T_J = 25 °C and I_D = 250 μA. This ensures robust turn-on with standard 10 V gate drivers while maintaining noise immunity against spurious gate excitation. The SIHD6N65ET4-GE3 remains fully enhanced across its operating temperature range, with minimal V_GS(th) drift ensuring stable performance in server and telecom power supplies.

Can SIHD6N65ET4-GE3 be used in synchronous rectification applications?

No, the SIHD6N65ET4-GE3 is not optimized for synchronous rectification. It is an N-channel high-voltage power MOSFET intended for high-side or low-side switching in hard-switched topologies, with a body diode reverse recovery time (t_rr) of 237 ns and Q_rr of 2.2 μC. For synchronous rectification, devices with faster t_rr, lower V_SD, and optimized body diode characteristics-such as dedicated SR controllers paired with logic-level MOSFETs-are recommended instead of the SIHD6N65ET4-GE3.

What is the recommended PCB pad layout for SIHD6N65ET4-GE3 in DPAK package?

Vishay recommends a minimum copper pad area of 6.18 mm × 5.69 mm (0.243″ × 0.224″) for the drain tab of the SIHD6N65ET4-GE3, per Application Note 826. The pad should be solid, thermally connected to internal ground or power planes via multiple vias, and sized to achieve ≤1.6 °C/W junction-to-ambient thermal resistance in typical 4-layer boards. Proper SIHD6N65ET4-GE3 layout also requires short, low-inductance gate traces and Kelvin source connection for accurate current sensing.

SIHD6N65ET4-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 820 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD6N65ET4-GE3 FAQ

1.How can I place an order for SIHD6N65ET4-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD6N65ET4-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD6N65ET4-GE3 reliable?

The price and inventory of SIHD6N65ET4-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD6N65ET4-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD6N65ET4-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD6N65ET4-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD6N65ET4-GE3?

SIHD6N65ET4-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD6N65ET4-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD6N65ET4-GE3?

For technical support, including SIHD6N65ET4-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD6N65ET4-GE3 requirements.

6.How does Aetrix verify that SIHD6N65ET4-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD6N65ET4-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD6N65ET4-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD6N65ET4-GE3?

All SIHD6N65ET4-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD6N65ET4-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD6N65ET4-GE3 part is unused and in its original packaging.

Return procedure for SIHD6N65ET4-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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