My Inquiry
My Account
Vishay Siliconix SIHD6N65ET5-GE3
- Part No.:
- SIHD6N65ET5-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHD6N65ET5-GE3.pdf
- Description:
- MOSFET N-CH 650V 7A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,194
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIHD6N65ET5-GE3 from Vishay Siliconix is a 650 V, 7 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring RDS(on) = 0.6 Ω at VGS = 10 V, Qg = 48 nC, and avalanche-rated (EAS = 56 mJ). It serves as a high-voltage switching element in offline SMPS and PFC stages for telecom and server power supplies.
For engineers reviewing the SIHD6N65ET5-GE3 datasheet, SIHD6N65ET5-GE3 pinout, SIHD6N65ET5-GE3 application, or SIHD6N65ET5-GE3 equivalent, this device is evaluated for high-efficiency, medium-power hard-switched topologies where low gate charge and robust UIS performance are critical to reliability under transient overloads.
Technical Context
This MOSFET employs planar silicon technology optimized for fast switching with minimized Ciss (820 pF) and ultra-low Qgd/Qg ratio (11/48 nC), reducing Miller-induced turn-off delay and improving controllability in high-dV/dt environments. Its 1.6 °C/W RthJC enables high-power dissipation in compact DPAK layouts without forced airflow.
The device integrates a robust body diode with trr = 237 ns and Qrr = 2.2 μC at 25 °C, supporting moderate-frequency synchronous rectification or freewheeling in discontinuous conduction mode (DCM) PFC. VGS(th) of 2–4 V ensures stable turn-on with standard 10 V gate drivers while avoiding spurious conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - supports 400 V AC input rectified to ~560 V DC bus with margin for surge and ringing |
| RDS(on) max @ 10 V | 0.6 Ω - delivers ≤ 5.4 W conduction loss at 3 A continuous drain current |
| Qg max | 48 nC - enables efficient drive with <1 W gate driver power at 100 kHz switching |
| EAS | 56 mJ - withstands unclamped inductive energy during startup or fault without failure |
| Ciss | 820 pF - reduces capacitive loading on gate driver and improves dV/dt immunity |
| tr/tf | 12–24 ns / 20–40 ns - supports >200 kHz hard-switched operation with controlled EMI |
| ID continuous @ TC = 100 °C | 5 A - defines thermal-limited output capability in typical heatsink-mounted DPAK layout |
Pinout & Package
DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; 3-terminal surface-mount configuration optimized for PCB heat spreading and low-inductance source return paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main high-side current path | Connected to exposed copper pad - must be soldered to ≥ 2 cm² thermal pad for RthJC = 1.6 °C/W performance |
| Gate (G) | Control electrode | High-impedance input requiring <100 nA leakage; sensitive to ESD - requires gate resistor (9.1 Ω typical) and clamping |
| Source (S) | Reference node for gate drive and current sensing | Low-inductance return path essential; recommended to tie directly to power ground plane beneath device |
Key Features
| Feature | Design Value |
|---|---|
| Low FOM (RDS(on) × Qg) | 0.6 Ω × 48 nC = 28.8 Ω·nC - balances conduction and switching losses better than legacy 650 V MOSFETs |
| Avalanche energy rating (UIS) | 56 mJ single-pulse - eliminates need for external snubbers in PFC boost inductor fault conditions |
| Body diode Qrr | 2.2 μC - limits reverse recovery loss and cross-conduction risk in quasi-resonant converters |
| Lead (Pb)-free & Halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for lead-free assembly |
| dV/dt ruggedness | 37 V/ns at TJ = 125 °C - suppresses false turn-on in high-noise bridge-leg configurations |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
|
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter operating at 100–300 kHz. IC Role / Device Role / Timing Role: High-voltage main switch handling 500–600 V DC bus with 3–5 A peak current. Use Value: Low Qg and Ciss reduce gate drive loss and improve light-load efficiency by >1.2% versus older 650 V MOSFETs. |
Use Scenario: Boost switch in 3.3 kW telecom rectifier with universal AC input (90–264 V AC). IC Role / Device Role / Timing Role: Fast-switching PFC stage switch operating in continuous conduction mode (CCM) at 65–100 kHz. Use Value: 56 mJ EAS rating prevents failure during line surge events without derating or oversized heatsinking. |
| Solar PV Inverter | Industrial Motor Drive |
|
Use Scenario: DC-link switch in string-level MPPT converter for residential solar inverters. IC Role / Device Role / Timing Role: Medium-power HV switch interfacing PV array (up to 1000 V OC) to DC-DC stage. Use Value: 650 V VDS rating provides sufficient margin for 1000 V PV arrays with 1.5× safety factor per IEC 62109. |
Use Scenario: Brake chopper switch in 3-phase inverter drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Energy-dump switch dissipating regenerative braking energy into braking resistor. Use Value: Robust body diode (IS = 7 A, VSD = 1.3 V) handles bidirectional current during dynamic braking without external diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V VDS, RDS(on) = 0.75 Ω, Qg = 32 nC, Zener-protected gate | Limited to ≤ 450 V DC bus; lower Qg but higher RDS(on) increases conduction loss above 2 A | Preferable where gate protection is prioritized over voltage margin and board space allows larger RDS(on)-driven heatsink |
| IXTH6N65X2 | 650 V VDS, RDS(on) = 0.55 Ω, Qg = 36 nC, TO-247 package | Higher thermal capacity (RthJC = 0.85 °C/W) but requires through-hole mounting and larger PCB area | Preferred for >10 A continuous designs where DPAK footprint is insufficient and TO-247 mechanical stability is needed |
Compared with STP6NK60ZFP and IXTH6N65X2, the SIHD6N65ET5-GE3 offers optimal trade-off between voltage margin, surface-mount compatibility, and balanced switching/conduction loss for 5–7 A medium-power SMPS - delivering 12% lower total loss than STP6NK60ZFP at 100 kHz and 30% smaller footprint than IXTH6N65X2.
Availability
SIHD6N65ET5-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SIHD6N65ET5-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.
The E Series Power MOSFETs, including SIHD6N65ET5-GE3, were designed for high-efficiency, high-voltage switching in server, telecom, and renewable energy power conversion systems where low FOM and avalanche ruggedness are mandatory.
FAQ
What is the maximum continuous drain current for SIHD6N65ET5-GE3 at 100 °C case temperature?
The SIHD6N65ET5-GE3 supports 5 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal limitation under real-world heatsink conditions and must be validated with actual board layout and airflow. The SIHD6N65ET5-GE3 achieves this with its 1.6 °C/W junction-to-case thermal resistance and DPAK package's exposed drain pad.
Does SIHD6N65ET5-GE3 have avalanche energy rating, and how is it tested?
Yes, the SIHD6N65ET5-GE3 is rated for 56 mJ single-pulse unclamped inductive switching (UIS) energy, tested per JEDEC standard with L = 28.2 mH, Rg = 25 Ω, IAS = 2 A, and starting TJ = 25 °C. This rating ensures reliable operation during transient overloads in PFC and SMPS circuits without requiring external clamping components. The SIHD6N65ET5-GE3 data sheet confirms this in the Absolute Maximum Ratings section.
What is the gate threshold voltage range for SIHD6N65ET5-GE3, and why does it matter?
The SIHD6N65ET5-GE3 has a gate threshold voltage (VGS(th)) range of 2–4 V at ID = 250 μA, ensuring predictable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise. This range allows robust operation across temperature and process variation. For reliable switching, the SIHD6N65ET5-GE3 should be driven with ≥ 10 V to achieve its specified RDS(on) of 0.6 Ω.
Can SIHD6N65ET5-GE3 replace older 600 V MOSFETs in existing designs?
The SIHD6N65ET5-GE3 is not a direct drop-in replacement for 600 V devices due to its higher 650 V VDS rating and different RDS(on)/Qg balance - but it can upgrade reliability in 400 V AC-input designs by adding voltage margin and improving UIS robustness. Layout changes may be needed if thermal or gate drive requirements differ. Always verify SOA, avalanche behavior, and body diode performance before substituting the SIHD6N65ET5-GE3.
What is the recommended PCB pad layout for SIHD6N65ET5-GE3 in DPAK package?
Vishay recommends minimum copper pads per Application Note 826: 0.224" × 0.420" (5.69 mm × 10.67 mm) for the drain pad, with thermal vias to inner ground planes. The SIHD6N65ET5-GE3 DPAK footprint requires precise alignment to match TO-252AA mechanical dimensions (Document 71197), especially for versions with facility code Y or N. Proper pad design ensures RthJC ≤ 1.6 °C/W and avoids solder joint fatigue under thermal cycling.
SIHD6N65ET5-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 820 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 78W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SIHD6N65ET5-GE3 FAQ
1.How can I place an order for SIHD6N65ET5-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHD6N65ET5-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHD6N65ET5-GE3 reliable?
The price and inventory of SIHD6N65ET5-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD6N65ET5-GE3 is usually 5 days.
3.What payment methods are accepted for SIHD6N65ET5-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD6N65ET5-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHD6N65ET5-GE3?
SIHD6N65ET5-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHD6N65ET5-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHD6N65ET5-GE3?
For technical support, including SIHD6N65ET5-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD6N65ET5-GE3 requirements.
6.How does Aetrix verify that SIHD6N65ET5-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHD6N65ET5-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD6N65ET5-GE3 meets industry standards.
7.What is the process for return or replacement of SIHD6N65ET5-GE3?
All SIHD6N65ET5-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD6N65ET5-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHD6N65ET5-GE3 part is unused and in its original packaging.
Return procedure for SIHD6N65ET5-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIHD6N65ET5-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
