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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD6N80AE-GE3

Name: SIHD6N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHD6N80AE-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD6N80AE-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD6N80AE-GE3.pdf

Description:: MOSFET N-CH 800V 5A DPAK

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Product details

Overview

SIHD6N80AE-GE3 from Vishay Siliconix is an 800 V, 5 A N-channel DPAK (TO-252) Power MOSFET with R_DS(on) = 0.826 Ω at V_GS = 10 V, Q_g = 15 nC (typ), and avalanche-rated (E_AS = 20.3 mJ). It delivers low conduction and switching losses in high-voltage SMPS and PFC stages for telecom and server power supplies.

For engineers reviewing the SIHD6N80AE-GE3 datasheet, SIHD6N80AE-GE3 pinout, SIHD6N80AE-GE3 application, or SIHD6N80AE-GE3 equivalent, key selection criteria include its 800 V V_DS, ultra-low gate charge, integrated Zener ESD protection, and rugged unclamped inductive switching capability - critical for high-reliability industrial and lighting power converters.

Technical Context

This device uses a planar high-voltage silicon process optimized for fast switching and low FOM (R_DS(on) × Q_g = 12.4 Ω·nC). Its body diode features t_rr = 285 ns (typ) and Q_rr = 1.7 μC (typ) at I_F = 3 A, enabling efficient hard-switched flyback and resonant topologies.

The MOSFET supports gate drive with ±30 V V_GS rating and exhibits stable threshold voltage (V_GS(th) = 2–4 V) across temperature. Its R_thJC = 2 °C/W enables high-power operation in compact DPAK layouts when mounted on copper-clad PCBs or heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands DC bus voltages up to 640 V in 400 V AC PFC designs with margin.
R_DS(on) max	0.950 Ω at T_J = 150 °C - Ensures <5 W conduction loss at 5 A continuous drain current.
Q_g max	22.5 nC - Enables efficient 100–300 kHz switching with standard gate drivers (e.g., UCC27531).
E_AS	20.3 mJ - Rated for single-pulse unclamped inductive energy, supporting robust overcurrent fault handling.
C_iss	422 pF - Low input capacitance reduces gate drive power and improves dv/dt immunity.
t_r/t_f	10/20 ns (typ) - Supports fast turn-on/turn-off transitions without excessive EMI generation.
R_thJC	2 °C/W - Allows >50 W dissipation with minimal case-to-heatsink thermal resistance.

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; surface-mount, single-ended leadframe design with gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires 10 V for full enhancement; Zener-protected against ESD.
Pin 2 (D)	Drain	High-voltage output node; electrically and thermally connected to exposed tab (pin 2 functionally tied to tab).
Pin 3 (S)	Source	Reference node for gate drive and current sensing; connects to power ground in buck/PFC configurations.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	12.4 Ω·nC - Reduces total switching + conduction loss in high-frequency PFC and LLC converters.
Avalanche energy rating	20.3 mJ (single pulse) - Eliminates need for external snubbers in inductive load switching.
Integrated Zener ESD protection	±30 V gate rating with built-in clamp - Prevents gate oxide damage during board handling and assembly.
Low C_oss (24 pF)	Minimizes capacitive turn-off loss and improves light-load efficiency in resonant topologies.
Body diode t_rr = 285 ns	Enables reliable commutation in synchronous rectification and bidirectional DC/DC applications.

Applications

Server Power Supply PFC Stage	Telecom 48 V Input Rectifier
Use Scenario: Boost PFC front-end operating at 100–300 kHz with 380–400 V DC output. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter. Use Value: 0.826 Ω R_DS(on) and 15 nC Q_g enable >96% efficiency at full load while maintaining thermal margin.	Use Scenario: High-side switch in isolated forward or active clamp forward converter with 48 V input. IC Role / Device Role / Timing Role: Primary-side power switch handling 800 V transient spikes during reset. Use Value: 800 V V_DS rating and 20.3 mJ E_AS ensure reliability under line surges and transformer leakage energy.
HID Lamp Ballast	Industrial Battery Charger
Use Scenario: Half-bridge in electronic ballast driving 250–1000 W metal halide lamps. IC Role / Device Role / Timing Role: High-side switch subjected to repetitive 400 V+ voltage reversal during lamp ignition. Use Value: Robust dv/dt immunity (100 V/ns) and low Q_gd/Q_gs ratio (7/4) suppress false turn-on during high-speed commutation.	Use Scenario: Primary switch in phase-shifted full-bridge charger for 48–96 V battery systems. IC Role / Device Role / Timing Role: Hard-switched power transistor managing 600–800 V DC link with 10 A peak current. Use Value: 5 A continuous ID and 10 A pulsed IDM support high-current charging profiles without derating.

Server Power Supply PFC Stage

Telecom 48 V Input Rectifier

Use Scenario: Boost PFC front-end operating at 100–300 kHz with 380–400 V DC output.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter.

Use Value: 0.826 Ω R_DS(on) and 15 nC Q_g enable >96% efficiency at full load while maintaining thermal margin.

Use Scenario: High-side switch in isolated forward or active clamp forward converter with 48 V input.

IC Role / Device Role / Timing Role: Primary-side power switch handling 800 V transient spikes during reset.

Use Value: 800 V V_DS rating and 20.3 mJ E_AS ensure reliability under line surges and transformer leakage energy.

HID Lamp Ballast

Industrial Battery Charger

Use Scenario: Half-bridge in electronic ballast driving 250–1000 W metal halide lamps.

IC Role / Device Role / Timing Role: High-side switch subjected to repetitive 400 V+ voltage reversal during lamp ignition.

Use Value: Robust dv/dt immunity (100 V/ns) and low Q_gd/Q_gs ratio (7/4) suppress false turn-on during high-speed commutation.

Use Scenario: Primary switch in phase-shifted full-bridge charger for 48–96 V battery systems.

IC Role / Device Role / Timing Role: Hard-switched power transistor managing 600–800 V DC link with 10 A peak current.

Use Value: 5 A continuous ID and 10 A pulsed IDM support high-current charging profiles without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 A, R_DS(on) = 0.95 Ω, Q_g = 32 nC, TO-220FP package	Higher current rating but larger package and higher gate charge - less suitable for space-constrained DPAK layouts.	Prefer when higher ID and through-hole mounting are required; not drop-in due to different footprint and thermal path.
IXTH8N80L2	800 V, 8 A, R_DS(on) = 0.85 Ω, Q_g = 28 nC, TO-247 package	Higher power handling and lower R_DS(on) but significantly larger outline and no integrated Zener ESD protection.	Select for >100 W discrete designs needing superior thermal performance; requires external gate protection.

Compared with STP8NK80ZFP and IXTH8N80L2, SIHD6N80AE-GE3 offers the lowest Q_g and smallest footprint among 800 V MOSFETs in DPAK, making it optimal for high-density, medium-power SMPS where gate drive efficiency and PCB area are critical.

Availability

SIHD6N80AE-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial battery chargers requiring stable component supply and long-term manufacturability.

Supply support for SIHD6N80AE-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHD6N80AE-GE3 belongs to Vishay's E Series high-voltage Power MOSFET family, engineered for high-efficiency, high-reliability switching in telecom, industrial, and lighting power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHD6N80AE-GE3 at 100 °C case temperature?

The SIHD6N80AE-GE3 has a continuous drain current rating of 3.2 A at T_C = 100 °C, per its Absolute Maximum Ratings table. This reflects thermal derating from its 5 A rating at 25 °C, based on a linear derating factor of 0.5 W/°C and R_thJC = 2 °C/W. Designers must verify junction temperature using actual layout and airflow conditions before finalizing thermal design for SIHD6N80AE-GE3.

Does SIHD6N80AE-GE3 include integrated ESD protection, and what is its gate voltage limit?

Yes, SIHD6N80AE-GE3 integrates a Zener diode for gate ESD protection, enabling a ±30 V gate-source voltage rating. This eliminates the need for external gate protection components in most applications. The device's gate oxide is rated for operation up to ±30 V, with gate leakage limited to ±50 μA at V_GS = ±30 V - a key reliability feature confirmed in its Specifications table.

What is the typical reverse recovery time (t_rr) of the body diode in SIHD6N80AE-GE3, and under what conditions is it measured?

The SIHD6N80AE-GE3 body diode has a typical reverse recovery time (t_rr) of 285 ns, measured at T_J = 25 °C, I_F = I_S = 3 A, di/dt = 100 A/μs, and V_R = 25 V. This value is specified in the Drain-Source Body Diode Characteristics section and supports use in hard-switched topologies where fast diode recovery minimizes switching loss and voltage overshoot.

Can SIHD6N80AE-GE3 be used in avalanche-mode operation, and what is its rated single-pulse energy?

Yes, SIHD6N80AE-GE3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) energy of 20.3 mJ, tested per note b: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, I_AS = 1.2 A. This rating allows safe operation during transient overcurrent events without external snubbers, a documented capability in its Absolute Maximum Ratings table.

What is the thermal resistance from junction to case (R_thJC) for SIHD6N80AE-GE3, and how does it impact heatsinking requirements?

The SIHD6N80AE-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 2 °C/W, as stated in its Thermal Resistance Ratings table. This low value means that for a 50 W power dissipation scenario, only a 1 °C temperature rise occurs across the die-to-tab interface - placing primary thermal design responsibility on the PCB copper area and optional heatsink interface, not the package itself.

SIHD6N80AE-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 422 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD6N80AE-GE3 FAQ

1.How can I place an order for SIHD6N80AE-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD6N80AE-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD6N80AE-GE3 reliable?

The price and inventory of SIHD6N80AE-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD6N80AE-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD6N80AE-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD6N80AE-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD6N80AE-GE3?

SIHD6N80AE-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD6N80AE-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD6N80AE-GE3?

For technical support, including SIHD6N80AE-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD6N80AE-GE3 requirements.

6.How does Aetrix verify that SIHD6N80AE-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD6N80AE-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD6N80AE-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD6N80AE-GE3?

All SIHD6N80AE-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD6N80AE-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD6N80AE-GE3 part is unused and in its original packaging.

Return procedure for SIHD6N80AE-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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