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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD6N80E-GE3

Name: SIHD6N80E-GE3
Brand: Vishay Siliconix
SKU: SIHD6N80E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD6N80E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD6N80E-GE3.pdf

Description:: MOSFET N-CH 800V 5.4A DPAK

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Product details

Overview

SIHD6N80E-GE3 from Vishay Siliconix is an 800 V, 5.4 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring 0.82 Ω R_DS(on) at V_GS = 10 V, 44 nC total gate charge, and 95 mJ single-pulse avalanche energy - designed for high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHD6N80E-GE3 datasheet, SIHD6N80E-GE3 pinout, SIHD6N80E-GE3 application, or SIHD6N80E-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance data (R_thJC = 1.6 °C/W), body diode recovery metrics (t_rr = 282 ns), and real-world use context for server SMPS and solar PV inverters.

Technical Context

This device employs planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its low Q_g/Q_gd ratio (44 nC / 8 nC) and reduced C_iss (827 pF) enable fast turn-on with controlled dv/dt (70 V/ns at T_J = 125 °C), minimizing switching losses in continuous conduction mode (CCM) PFC.

The integral body diode supports synchronous rectification and unclamped inductive switching, with validated reverse recovery charge Q_rr = 2.0–4.0 μC and peak recovery current I_RRM = 11 A - critical for ZVS-capable topologies and welder output stages where diode stress must be managed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	800 V - supports 400 V AC input rectified to ~565 V DC bus with 40 % margin for transient overvoltage in industrial PFC designs
R_DS(on) typ	0.82 Ω at V_GS = 10 V - enables <1.3 W conduction loss at 3.6 A RMS in 2 kW telecom PSU primary switch
Q_g max	44 nC - determines gate driver power requirement (~1.8 mW @ 100 kHz, 10 V swing) and influences EMI filter sizing
E_AS	95 mJ - ensures robustness against inductive kickback in motor drive H-bridge freewheeling and battery charger flyback snubbers
t_r/t_f	9–18 ns / 18–36 ns - enables >500 kHz operation in LLC resonant converters while maintaining <5 % dead-time loss
R_thJC	1.6 °C/W - allows 78 W dissipation with ≤125 °C junction rise over 25 °C case, supporting compact heatsink design in enclosed server PSUs
V_SD	1.2 V at I_S = 3 A - defines forward drop during body-diode conduction in half-bridge bootstrap operation

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; standard 3-pin layout optimized for PCB copper area allocation per Application Note 826 (minimum pad: 6.18 mm × 5.69 mm).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires 10 V drive for full enhancement; gate input resistance 0.5–2.0 Ω limits ringing in high-dI/dt layouts
Pin 2 (D)	Drain	High-side switching node; connected to exposed copper tab for thermal path to heatsink; rated for 800 V blocking
Pin 3 (S)	Source	Power return reference; ties to gate driver ground; body diode anode - conducts during freewheeling in buck-derived topologies

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	36.1 Ω·nC - reduces combined conduction + switching loss in high-frequency PFC, improving efficiency by ≥0.4 % vs. legacy 800 V MOSFETs
Avalanche-rated	95 mJ single-pulse E_AS - eliminates need for external clamping in 1–3 kW inductive load switching without derating
Ultra-low Q_gd	8 nC - minimizes Miller plateau duration, enabling faster voltage transition and reducing cross-conduction risk in bridge circuits
Low C_iss	827 pF - lowers gate drive current demand and improves noise immunity in high-noise telecom environments
Body diode t_rr	282–564 ns - supports soft-recovery in phase-shifted full-bridge converters, reducing diode-induced EMI spikes

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 1.5–3 kW redundant AC/DC power modules for cloud infrastructure servers. IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET in active clamp forward or LLC resonant converter primary switch. Use Value: 800 V rating accommodates 277 V AC input with safety margin; 0.82 Ω R_DS(on) keeps conduction loss below 1.5 W at full load, enabling 94.2 % efficiency at 230 V AC.	Use Scenario: Boost PFC stage in -48 V telecom rectifier systems handling 2–5 kW input. IC Role / Device Role / Timing Role: Fast-switching MOSFET in continuous conduction mode (CCM) boost converter operating at 65–100 kHz. Use Value: Low Q_g (44 nC) and Q_gd (8 nC) reduce gate drive losses by 35 % versus comparable 800 V devices, directly improving system thermal profile.
Solar PV Inverter	Industrial Welder
Use Scenario: DC-link switching in string inverters converting 600–1000 V DC PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side switch in three-level NPC (neutral-point-clamped) inverter leg. Use Value: Avalanche energy rating (95 mJ) withstands voltage overshoot during rapid IGBT/MOSFET turn-off transients, eliminating snubber components in cost-sensitive designs.	Use Scenario: Output stage switching in IGBT-gated inverter-based arc welders delivering 200–400 A DC output. IC Role / Device Role / Timing Role: Freewheeling MOSFET in parallel with IGBT collector-emitter path to manage reactive energy during arc interruption. Use Value: Body diode t_rr = 282 ns and Q_rr = 2.0 μC minimize reverse recovery losses and associated thermal stress during 10–20 kHz switching cycles.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 1.5–3 kW redundant AC/DC power modules for cloud infrastructure servers.

IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET in active clamp forward or LLC resonant converter primary switch.

Use Value: 800 V rating accommodates 277 V AC input with safety margin; 0.82 Ω R_DS(on) keeps conduction loss below 1.5 W at full load, enabling 94.2 % efficiency at 230 V AC.

Use Scenario: Boost PFC stage in -48 V telecom rectifier systems handling 2–5 kW input.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: Low Q_g (44 nC) and Q_gd (8 nC) reduce gate drive losses by 35 % versus comparable 800 V devices, directly improving system thermal profile.

Solar PV Inverter

Industrial Welder

Use Scenario: DC-link switching in string inverters converting 600–1000 V DC PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC (neutral-point-clamped) inverter leg.

Use Value: Avalanche energy rating (95 mJ) withstands voltage overshoot during rapid IGBT/MOSFET turn-off transients, eliminating snubber components in cost-sensitive designs.

Use Scenario: Output stage switching in IGBT-gated inverter-based arc welders delivering 200–400 A DC output.

IC Role / Device Role / Timing Role: Freewheeling MOSFET in parallel with IGBT collector-emitter path to manage reactive energy during arc interruption.

Use Value: Body diode t_rr = 282 ns and Q_rr = 2.0 μC minimize reverse recovery losses and associated thermal stress during 10–20 kHz switching cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 A, R_DS(on) = 0.85 Ω, Q_g = 48 nC, TO-220FP package	Higher R_thJA (65 °C/W vs. 62 °C/W) and through-hole mounting limit high-density board use	Preferred when mechanical mounting stability outweighs thermal performance; not suitable for DPAK-reflow assembly
IXTH8N80L2	800 V, 8 A, R_DS(on) = 0.82 Ω, Q_g = 52 nC, TO-247 package	Higher gate charge increases driver loss; larger footprint requires PCB redesign	Chosen for higher current headroom in 3–5 kW welder outputs where heatsinking dominates layout constraints

Compared with STP8NK80ZFP and IXTH8N80L2, SIHD6N80E-GE3 offers superior thermal resistance (R_thJC = 1.6 °C/W), smaller DPAK footprint, and lowest Q_gd/Q_g ratio - making it optimal for space-constrained, high-efficiency telecom and server power where PCB real estate and thermal management are critical.

Availability

SIHD6N80E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, lead-free compliance, and traceable sourcing for industrial production programs.

Supply support for SIHD6N80E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The E Series Power MOSFET product line targets high-voltage, high-efficiency switching in server, telecom, and renewable energy systems - emphasizing low FOM, avalanche ruggedness, and thermal performance in surface-mount packages.

FAQ

What is the maximum continuous drain current rating for SIHD6N80E-GE3 at 100 °C case temperature?

The SIHD6N80E-GE3 has a continuous drain current rating of 3.4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 5.4 A rating at 25 °C case temperature, based on a linear derating factor of 0.63 W/°C. Engineers must verify heatsink design ensures T_C remains ≤100 °C under worst-case ambient and airflow conditions to sustain this current in SIHD6N80E-GE3 applications.

Does SIHD6N80E-GE3 support gate drive voltages below 10 V?

Yes, SIHD6N80E-GE3 operates with gate drive voltages down to its threshold voltage range of 2.0–4.0 V (V_GS(th)), but full enhancement requires V_GS ≥ 10 V to achieve the specified R_DS(on) of 0.82 Ω. At 5 V drive, R_DS(on) rises significantly - typical curves show >3 Ω - increasing conduction loss. Therefore, SIHD6N80E-GE3 is not a logic-level MOSFET and should be driven with a dedicated 10–15 V gate driver in all high-efficiency SIHD6N80E-GE3 implementations.

How is the avalanche energy rating of SIHD6N80E-GE3 validated and what does it mean for circuit design?

The SIHD6N80E-GE3 is rated for 95 mJ single-pulse avalanche energy (E_AS) under defined test conditions: V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2.6 A, starting T_J = 25 °C. This validated ruggedness allows designers to eliminate external avalanche clamps in moderate-energy inductive switching circuits - such as PFC boost diodes or welder output chokes - provided pulse repetition remains within safe junction temperature limits. SIHD6N80E-GE3's E_AS is not rated for repetitive operation.

What are the key thermal resistance values for SIHD6N80E-GE3 and how do they impact heatsink selection?

SIHD6N80E-GE3 specifies R_thJC = 1.6 °C/W (junction-to-case) and R_thJA = 62 °C/W (junction-to-ambient, no heatsink). The low R_thJC confirms efficient heat transfer from die to PCB copper via the exposed drain pad, making thermal performance highly dependent on PCB layout - especially copper area and thickness under the DPAK tab. For 78 W dissipation, a heatsink with ≤15 °C/W thermal resistance (including interface material) is required to hold T_J ≤ 150 °C at 25 °C ambient. SIHD6N80E-GE3's thermal specs assume proper soldering per Vishay's recommendations (peak 300 °C for 10 s).

Can SIHD6N80E-GE3 be used in place of older 800 V MOSFETs like the SIHF6N80E in existing designs?

SIHD6N80E-GE3 is a direct replacement for SIHF6N80E in DPAK-based designs, sharing identical pinout, package dimensions, and key specifications: both are 800 V, 5.4 A, 0.82 Ω R_DS(on), and 44 nC Q_g. However, SIHD6N80E-GE3 features improved body diode recovery (t_rr = 282 ns vs. 320 ns) and tighter Q_gd tolerance (8 nC max vs. 9 nC), offering measurable EMI and efficiency gains in high-frequency SMPS. No PCB changes are required when upgrading from SIHF6N80E to SIHD6N80E-GE3.

SIHD6N80E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 940mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 827 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD6N80E-GE3 FAQ

1.How can I place an order for SIHD6N80E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD6N80E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD6N80E-GE3 reliable?

The price and inventory of SIHD6N80E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD6N80E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD6N80E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD6N80E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD6N80E-GE3?

SIHD6N80E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD6N80E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD6N80E-GE3?

For technical support, including SIHD6N80E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD6N80E-GE3 requirements.

6.How does Aetrix verify that SIHD6N80E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD6N80E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD6N80E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD6N80E-GE3?

All SIHD6N80E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD6N80E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD6N80E-GE3 part is unused and in its original packaging.

Return procedure for SIHD6N80E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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