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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD7N60E-E3

Name: SIHD7N60E-E3
Brand: Vishay Siliconix
SKU: SIHD7N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD7N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD7N60E-E3.pdf

Description:: MOSFET N-CH 600V 7A DPAK

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Product details

Overview

SIHD7N60E-E3 from Vishay Siliconix is a 600 V, 7 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, featuring R_DS(on) ≤ 0.6 Ω at V_GS = 10 V, Q_g ≤ 40 nC, and avalanche-rated (E_AS = 43 mJ). It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and industrial motor drives requiring robust unclamped inductive switching capability.

For engineers reviewing the SIHD7N60E-E3 datasheet, SIHD7N60E-E3 pinout, SIHD7N60E-E3 application, or SIHD7N60E-E3 equivalent, key selection criteria include its 600 V V_DS rating, low gate charge for reduced switching loss, 1.6 °C/W R_thJC, and DPAK thermal performance in convection-cooled power supplies.

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage hard-switching applications. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while the low C_iss (680 pF typ.) and C_oss (39 pF typ.) support high-frequency operation up to 100 kHz in resonant and quasi-resonant topologies.

The integral body diode exhibits t_rr = 230 ns and Q_rr = 1.9 μC at I_F = 3.5 A, enabling moderate-speed freewheeling in continuous-conduction-mode PFC. Its UIS-rated construction allows safe operation under inductive load transients without external snubbers in properly designed layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified rails with 50 % margin for surge and ringing
R_DS(on) max @ 10 V	0.6 Ω - delivers ≤ 14.7 W conduction loss at 7 A DC, suitable for <100 W primary switches
Q_g max	40 nC - enables efficient drive with <1 W gate driver power at 100 kHz switching
E_AS	43 mJ - withstands unclamped inductive energy in 13.8 mH test circuit per JEDEC JESD24-11
R_thJC max	1.6 °C/W - allows 78 W dissipation with ≤ 125 °C junction rise above 25 °C case temperature
I_D cont @ T_C = 100 °C	5 A - defines usable current limit in thermally constrained PCB-mount applications
C_iss typ	680 pF - reduces Miller effect and improves dv/dt immunity in high-side configurations

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction to PCB copper; 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H), lead (Pb)-free and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires 10 V drive for full R_DS(on) spec; 100 nA leakage at ±20 V
Pin 2 (D)	Drain	High-voltage output node; electrically connected to exposed backside metal for heatsinking
Pin 3 (S)	Source	Return path for load current; referenced to gate drive ground; hosts body diode cathode

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	≤ 24 Ω·nC - balances conduction and switching losses in 65–100 kHz SMPS designs
Avalanche energy rated (UIS)	43 mJ single-pulse - eliminates need for external clamping in flyback and forward converter snubberless operation
Ultra-low Q_gd/Q_g ratio	22.5 % (9/40 nC) - minimizes Miller plateau duration and improves switching controllability
Body diode softness factor	t_rr/Q_rr ≈ 121 ns/μC - reduces EMI and voltage overshoot during diode commutation
150 °C max junction temperature	Enables operation in sealed enclosures or high-ambient industrial environments without derating below 100 °C case

Applications

Server Power Supply	PFC Front-End
Use Scenario: Primary-side switch in 80 PLUS Titanium 1 kW AC-DC front-end using active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage synchronous rectifier control switch operating at 100 kHz with 500 V DC bus. Use Value: 0.6 Ω R_DS(on) limits conduction loss to 21 W at 7 A peak, while 40 nC Q_g keeps gate drive loss under 0.8 W.	Use Scenario: Boost switch in continuous-conduction-mode (CCM) PFC stage for telecom rectifiers. IC Role / Device Role / Timing Role: Fast-turning high-voltage switch handling 6 A RMS current at 65 kHz with 400 V DC link. Use Value: Low C_iss (680 pF) and soft-recovery body diode reduce EMI generation and simplify EMI filter design.
Solar Microinverter	Industrial Motor Drive
Use Scenario: DC-link switch in half-bridge inverter stage of 300 W photovoltaic microinverter. IC Role / Device Role / Timing Role: 600 V blocking switch subjected to repetitive 480 V bus transients and partial-load inductive spikes. Use Value: 43 mJ E_AS rating ensures reliability under partial shading-induced inductive stress without snubber circuits.	Use Scenario: Inverter leg switch in 1.5 kW brushless DC motor drive for HVAC compressors. IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET in 3-phase bridge with 10 kHz PWM and 350 V DC bus. Use Value: 1.6 °C/W R_thJC enables direct PCB copper heatsinking, eliminating discrete heatsinks in space-constrained modules.

Server Power Supply

PFC Front-End

Use Scenario: Primary-side switch in 80 PLUS Titanium 1 kW AC-DC front-end using active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier control switch operating at 100 kHz with 500 V DC bus.

Use Value: 0.6 Ω R_DS(on) limits conduction loss to 21 W at 7 A peak, while 40 nC Q_g keeps gate drive loss under 0.8 W.

Use Scenario: Boost switch in continuous-conduction-mode (CCM) PFC stage for telecom rectifiers.

IC Role / Device Role / Timing Role: Fast-turning high-voltage switch handling 6 A RMS current at 65 kHz with 400 V DC link.

Use Value: Low C_iss (680 pF) and soft-recovery body diode reduce EMI generation and simplify EMI filter design.

Solar Microinverter

Industrial Motor Drive

Use Scenario: DC-link switch in half-bridge inverter stage of 300 W photovoltaic microinverter.

IC Role / Device Role / Timing Role: 600 V blocking switch subjected to repetitive 480 V bus transients and partial-load inductive spikes.

Use Value: 43 mJ E_AS rating ensures reliability under partial shading-induced inductive stress without snubber circuits.

Use Scenario: Inverter leg switch in 1.5 kW brushless DC motor drive for HVAC compressors.

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET in 3-phase bridge with 10 kHz PWM and 350 V DC bus.

Use Value: 1.6 °C/W R_thJC enables direct PCB copper heatsinking, eliminating discrete heatsinks in space-constrained modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	600 V, 7 A, R_DS(on) = 0.7 Ω, Q_g = 42 nC, TO-220FP package	Higher R_DS(on) and through-hole mounting require larger PCB area and different thermal interface	Prefer SIHD7N60E-E3 for surface-mount density and lower conduction loss in compact power supplies
IRFBC40APBF	600 V, 6.2 A, R_DS(on) = 0.75 Ω, Q_g = 48 nC, TO-220 package	Lower current rating and higher gate charge increase switching loss in 100 kHz designs	Choose SIHD7N60E-E3 when board space, thermal resistance, or efficiency at light load are critical

Compared with STP7NK60ZFP and IRFBC40APBF, the SIHD7N60E-E3 offers superior surface-mount thermal performance (1.6 vs. >2.5 °C/W), lower R_DS(on), and tighter Q_g distribution-making it optimal for high-density, convection-cooled 65–100 kHz power converters where layout area and thermal headroom are constrained.

Availability

SIHD7N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar microinverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHD7N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIHD7N60E-E3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage hard-switching in server, telecom, and industrial power conversion where low gate charge and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current for SIHD7N60E-E3 at 100 °C case temperature?

The SIHD7N60E-E3 supports 5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package; at T_C = 25 °C, the rating increases to 7 A. Designers must verify PCB copper area and airflow to maintain case temperature within this range for sustained operation.

Does SIHD7N60E-E3 have avalanche capability, and how is it tested?

Yes, the SIHD7N60E-E3 is fully rated for unclamped inductive switching (UIS) with E_AS = 43 mJ per pulse. Testing follows JEDEC JESD24-11 using L = 13.8 mH, R_g = 25 Ω, I_AS = 2.5 A, and starting T_J = 25 °C. This rating validates robustness in flyback, forward, and LLC resonant converters where inductive energy must be absorbed internally.

What is the gate threshold voltage range for SIHD7N60E-E3, and how does it affect drive requirements?

The SIHD7N60E-E3 has a V_GS(th) range of 2–4 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. The device is not logic-level; driving below 5 V risks incomplete enhancement and excessive R_DS(on). For optimal performance, use ≥10 V gate drive referenced to source.

How does the body diode performance of SIHD7N60E-E3 compare to standard recovery diodes?

The SIHD7N60E-E3 body diode delivers t_rr = 230 ns and Q_rr = 1.9 μC at I_F = 3.5 A, dI/dt = 100 A/μs, and T_J = 25 °C. Its soft recovery characteristic (low I_RRM = 14 A) reduces voltage overshoot and EMI versus fast-recovery diodes. However, it is not optimized for synchronous rectification; dedicated Schottky or SiC diodes remain preferred for secondary-side applications.

Is SIHD7N60E-E3 compatible with lead-free reflow soldering processes?

Yes, the SIHD7N60E-E3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak solder temperature tolerance up to 300 °C for 10 seconds. Its DPAK package uses matte tin plating and meets Vishay's Pb-free and halogen-free compliance standards (per document 99912). Standard IPC-7095-compliant thermal profiles apply.

SIHD7N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD7N60E-E3 FAQ

1.How can I place an order for SIHD7N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD7N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD7N60E-E3 reliable?

The price and inventory of SIHD7N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD7N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHD7N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD7N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD7N60E-E3?

SIHD7N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD7N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD7N60E-E3?

For technical support, including SIHD7N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD7N60E-E3 requirements.

6.How does Aetrix verify that SIHD7N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHD7N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD7N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHD7N60E-E3?

All SIHD7N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD7N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD7N60E-E3 part is unused and in its original packaging.

Return procedure for SIHD7N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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