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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD7N60E-GE3

Name: SIHD7N60E-GE3
Brand: Vishay Siliconix
SKU: SIHD7N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD7N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD7N60E-GE3.pdf

Description:: MOSFET N-CH 600V 7A DPAK

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Product details

Overview

SIHD7N60E-GE3 from Vishay Siliconix is a 600 V, 7 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 0.6 Ω @ V_GS = 10 V, Q_g = 40 nC max, and avalanche-rated (E_AS = 43 mJ). It serves as a primary switching device in high-voltage DC-DC converters and PFC stages of telecom/server power supplies.

For engineers reviewing the SIHD7N60E-GE3 datasheet, SIHD7N60E-GE3 pinout, SIHD7N60E-GE3 application, or SIHD7N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, 600 V blocking capability, and UIS-rated ruggedness for inductive switching reliability.

Technical Context

This MOSFET employs planar V-groove silicon technology optimized for high-voltage hard-switching applications. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers, while the low C_iss (680 pF typ.) and C_oss (39 pF typ.) reduce switching losses and EMI generation in SMPS topologies.

The device integrates a fast-recovery body diode (t_rr = 230 ns, Q_rr = 1.9 μC) suitable for synchronous rectification and freewheeling in continuous conduction mode (CCM) PFC. Thermal resistance R_thJC = 1.6 °C/W enables high-power operation with minimal heatsink requirements when mounted on copper PCB areas per Vishay's DPAK pad recommendations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 400 V DC bus designs with ≥50 % safety margin for transient overvoltage in telecom/server PSUs.
R_DS(on) max @ 10 V	0.6 Ω - Enables <1.5 W conduction loss at 7 A continuous drain current, reducing thermal stress in compact layouts.
Q_g max	40 nC - Low gate drive energy requirement allows use with low-power gate drivers and reduces driver IC heating.
E_AS	43 mJ - Rated unclamped inductive switching energy supports robust operation in flyback and LLC resonant converters.
C_iss typ.	680 pF - Minimizes Miller effect and improves dv/dt immunity during high-speed switching at 100 kHz–500 kHz.
t_r/t_f	13–26 ns / 14–28 ns - Fast edge rates enable high-frequency operation while maintaining controllable EMI profile.
R_thJC	1.6 °C/W - Allows >50 W power dissipation with modest heatsinking; critical for thermally constrained server board designs.

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection to PCB copper pour. Standard 3-pin surface-mount outline: G (Gate), D (Drain), S (Source), with Drain connected to the large metal pad on the bottom side.

Pin/Terminal	Circuit Role	Design Meaning
G	Control terminal	Receives gate drive signal; requires ≤±30 V rating; low input capacitance (C_iss) eases driver sizing.
D	High-side power output	Connected to drain node (e.g., PFC boost switch node); electrically and thermally tied to PCB copper via exposed tab.
S	Power return reference	Source node ties to ground or current-sense resistor; defines common reference for gate drive and feedback circuits.

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	0.6 Ω × 40 nC = 24 Ω·nC - Reduces combined conduction + switching loss better than comparable 600 V MOSFETs.
Avalanche energy rated (UIS)	43 mJ single-pulse - Eliminates need for external snubbers in inductive load switching, improving system reliability.
Fast body diode recovery	t_rr = 230 ns, Q_rr = 1.9 μC - Limits reverse recovery loss and diode-induced shoot-through risk in half-bridge configurations.
Low C_oss and Crss	C_oss = 39 pF, Crss = 5 pF - Enhances zero-voltage switching (ZVS) capability and reduces capacitive turn-off loss in resonant topologies.
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - Meets environmental compliance for global industrial and telecom deployments.

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary switch in active clamp forward or LLC resonant converter delivering 1–3 kW at 48 V output. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC input, operating at 100–300 kHz with ZVS-assisted turn-on. Use Value: Low Q_g and C_iss minimize gate drive loss and improve efficiency above 94 % at full load.	Use Scenario: Boost switch in 3.3 kW telecom rectifier with universal AC input (90–264 VAC) and PFC stage. IC Role / Device Role / Timing Role: Critical PFC switching element conducting continuous 7 A RMS current with 600 V blocking. Use Value: Rugged UIS rating and low R_DS(on) sustain reliability under line surges and load transients without derating.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string-level MPPT converter interfacing photovoltaic arrays to battery storage. IC Role / Device Role / Timing Role: High-side switch in buck-boost topology operating at 50–150 kHz with bidirectional current capability. Use Value: Fast body diode enables efficient reverse conduction during MPPT perturbation cycles, reducing auxiliary diode count.	Use Scenario: Inverter leg switch in 1–3 HP variable frequency drive for HVAC compressors or pumps. IC Role / Device Role / Timing Role: IGBT replacement in 600 V bridge arms, driven by isolated gate drivers with 15 V supply. Use Value: Lower switching loss vs. IGBTs at 10–20 kHz enables higher efficiency and reduced heatsink volume in enclosed enclosures.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary switch in active clamp forward or LLC resonant converter delivering 1–3 kW at 48 V output.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC input, operating at 100–300 kHz with ZVS-assisted turn-on.

Use Value: Low Q_g and C_iss minimize gate drive loss and improve efficiency above 94 % at full load.

Use Scenario: Boost switch in 3.3 kW telecom rectifier with universal AC input (90–264 VAC) and PFC stage.

IC Role / Device Role / Timing Role: Critical PFC switching element conducting continuous 7 A RMS current with 600 V blocking.

Use Value: Rugged UIS rating and low R_DS(on) sustain reliability under line surges and load transients without derating.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string-level MPPT converter interfacing photovoltaic arrays to battery storage.

IC Role / Device Role / Timing Role: High-side switch in buck-boost topology operating at 50–150 kHz with bidirectional current capability.

Use Value: Fast body diode enables efficient reverse conduction during MPPT perturbation cycles, reducing auxiliary diode count.

Use Scenario: Inverter leg switch in 1–3 HP variable frequency drive for HVAC compressors or pumps.

IC Role / Device Role / Timing Role: IGBT replacement in 600 V bridge arms, driven by isolated gate drivers with 15 V supply.

Use Value: Lower switching loss vs. IGBTs at 10–20 kHz enables higher efficiency and reduced heatsink volume in enclosed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	R_DS(on) = 0.75 Ω @ 10 V; Q_g = 42 nC; TO-220FP package (higher R_thJA)	Higher conduction loss and larger footprint; less suitable for space-constrained server boards.	Preferred where through-hole mounting and legacy layout compatibility are required.
IXTH7N60L2	R_DS(on) = 0.65 Ω @ 10 V; Q_g = 32 nC; TO-247 package (lower R_thJC = 0.85 °C/W)	Better thermal performance but larger size; requires rework of DPAK land pattern and gate drive routing.	Chosen when >100 W continuous dissipation is needed and board area permits TO-247 mounting.

Compared with STP7NK60ZFP and IXTH7N60L2, SIHD7N60E-GE3 delivers optimal balance of low-profile DPAK packaging, competitive R_DS(on) × Q_g, and proven ruggedness for high-volume telecom and server power designs - making it ideal for new compact PSU platforms where layout density and thermal management are co-constrained.

Availability

SIHD7N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHD7N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHD7N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in 400–600 V industrial and communications power systems.

FAQ

What is the maximum continuous drain current rating for SIHD7N60E-GE3 at 100 °C case temperature?

The SIHD7N60E-GE3 has a continuous drain current rating of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 7 A rating at 25 °C case temperature, based on a linear derating factor of 0.63 W/°C and R_thJC = 1.6 °C/W. Engineers must verify PCB copper area and airflow to sustain this current in actual SIHD7N60E-GE3 implementations.

Does SIHD7N60E-GE3 support logic-level gate drive?

No, SIHD7N60E-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is 2–4 V, but it is characterized and optimized for V_GS = 10 V operation, where R_DS(on) is guaranteed ≤0.6 Ω. Driving SIHD7N60E-GE3 with only 5 V may result in incomplete turn-on and excessive conduction loss; a 10–15 V gate driver is recommended for full performance and thermal safety.

What is the significance of the "-GE3" suffix in SIHD7N60E-GE3?

The "-GE3" suffix denotes that SIHD7N60E-GE3 is a lead (Pb)-free and halogen-free version compliant with RoHS Directive 2011/65/EU and Vishay's Green Electronics initiative. It uses matte tin plating on the leads and meets JEDEC JS709B standards. This suffix distinguishes it from non-RoHS variants like SIHD7N60E, ensuring environmental compliance for export and industrial deployment.

Can SIHD7N60E-GE3 replace older 600 V MOSFETs such as IRFBC40 in existing designs?

SIHD7N60E-GE3 offers lower R_DS(on) (0.6 Ω vs. IRFBC40's 1.2 Ω) and significantly lower Q_g (40 nC vs. ~80 nC), enabling higher efficiency and faster switching. However, it is not pin-to-pin compatible due to DPAK vs. TO-220 packaging. Layout redesign is required. Electrical improvements are real, but mechanical compatibility must be verified before drop-in substitution of SIHD7N60E-GE3.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHD7N60E-GE3?

The typical reverse recovery charge (Q_rr) of the integrated body diode in SIHD7N60E-GE3 is 1.9 μC, measured at T_J = 25 °C, I_F = 3.5 A, dI/dt = 100 A/μs, and V_R = 20 V. This value directly impacts commutation loss in half-bridge and synchronous rectifier applications; lower Q_rr helps reduce switching loss and EMI compared to standard MOSFETs with slower diodes.

SIHD7N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

SIHD7N60E-GE3 FAQ

1.How can I place an order for SIHD7N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD7N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD7N60E-GE3 reliable?

The price and inventory of SIHD7N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD7N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD7N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD7N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD7N60E-GE3?

SIHD7N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD7N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD7N60E-GE3?

For technical support, including SIHD7N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD7N60E-GE3 requirements.

6.How does Aetrix verify that SIHD7N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD7N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD7N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD7N60E-GE3?

All SIHD7N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD7N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD7N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHD7N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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