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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD7N60ET4-GE3

Name: SIHD7N60ET4-GE3
Brand: Vishay Siliconix
SKU: SIHD7N60ET4-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD7N60ET4-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD7N60ET4-GE3.pdf

Description:: MOSFET N-CH 600V 7A TO252AA

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Product details

Overview

SIHD7N60ET4-GE3 from Vishay Siliconix is a 600 V, 7 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, optimized for high-voltage switching in offline SMPS and PFC stages. It features R_DS(on) ≤ 0.6 Ω at V_GS = 10 V, Q_g ≤ 40 nC, and avalanche-rated ruggedness (E_AS = 43 mJ), enabling efficient operation in telecom rectifiers and solar inverters.

For engineers reviewing the SIHD7N60ET4-GE3 datasheet, SIHD7N60ET4-GE3 pinout, SIHD7N60ET4-GE3 application, or SIHD7N60ET4-GE3 equivalent, key selection criteria include its 600 V blocking capability, low gate charge for reduced switching loss, DPAK thermal performance (R_thJC = 1.6 °C/W), and UIS-rated reliability in inductive load circuits.

Technical Context

This MOSFET employs planar V-groove silicon technology with optimized cell pitch and gate oxide design to achieve low R_DS(on) × Q_g figure-of-merit (FOM). Its threshold voltage range (2–4 V) ensures stable turn-on under wide V_GS tolerances, while the integral body diode supports synchronous rectification and freewheeling in hard-switched topologies.

The device operates with fixed gate drive requirements (V_GS = 10 V), exhibits C_iss = 680 pF and C_oss = 39 pF at V_DS = 100 V, and maintains safe operating area (SOA) compliance up to 10 ms pulse width at T_C = 25 °C - critical for overcurrent protection in industrial power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports primary-side switching in universal-input 85–265 VAC offline converters without derating
R_DS(on) max @ 10 V	0.6 Ω - enables ≤ 14.7 W conduction loss at 7 A DC, suitable for continuous 50–100 W output stages
Q_g max	40 nC - reduces gate driver power demand and switching transition time in 50–100 kHz PFC circuits
E_AS	43 mJ - withstands unclamped inductive energy during fault conditions in motor drives and welders
T_J range	−55 to +150 °C - supports operation in sealed industrial enclosures and outdoor PV inverter environments
R_thJC	1.6 °C/W - allows ≥ 48 W power dissipation with modest heatsinking in DPAK footprint
I_D cont @ 100 °C	5 A - defines usable current limit in thermally constrained telecom brick designs

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; 3-terminal configuration (Drain, Gate, Source); lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Connected to PCB copper pour for heat sinking; electrically tied to backside metal tab
Gate (G)	Control electrode	High-impedance input requiring < 100 nA leakage; sensitive to ESD; driven by 10 V logic-level signal
Source (S)	Reference node for gate drive and current return	Common connection point for sense resistor, driver ground, and local decoupling; forms source-follower reference

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	Enables simultaneous reduction of conduction and switching losses in 65–100 kHz PFC boost stages
Avalanche energy rating (E_AS)	43 mJ single-pulse rating eliminates need for external snubbers in flyback and resonant LLC primary switches
Low C_iss (680 pF)	Reduces Miller-induced shoot-through risk in half-bridge configurations with fast gate drivers
Body diode t_rr = 230 ns	Minimizes reverse recovery loss in discontinuous conduction mode (DCM) PFC and LED drivers
150 °C maximum junction temperature	Supports compact thermal design in space-constrained server PSU modules without forced air cooling

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter for 1U/2U rack-mounted PSUs. IC Role / Device Role / Timing Role: High-voltage power switch handling 390 V DC bus with 50–75 kHz switching frequency. Use Value: R_DS(on) ≤ 0.6 Ω and Q_g ≤ 40 nC reduce total power loss to < 2.5 W at 7 A, improving efficiency to >94% at full load.	Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating from −48 V DC backup and AC line input. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET controlling inductor current in continuous conduction mode (CCM). Use Value: Low C_oss (39 pF) and dV/dt capability (3 V/ns) prevent false triggering during high dv/dt transitions in multi-phase PFC.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string-level MPPT optimizer or microinverter H-bridge output stage. IC Role / Device Role / Timing Role: 600 V blocking switch managing bidirectional energy flow between PV panel and grid-tied inverter stage. Use Value: Avalanche rating (E_AS = 43 mJ) absorbs transient energy from lightning-induced surges on rooftop arrays without failure.	Use Scenario: Inverter leg switch in 0.75–2.2 kW variable-frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase inverter output stage operating at 8–16 kHz carrier frequency. Use Value: 150 °C T_J rating and R_thJC = 1.6 °C/W allow sustained 5 A RMS current with passive heatsink, reducing system cost vs. TO-247 solutions.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter for 1U/2U rack-mounted PSUs.

IC Role / Device Role / Timing Role: High-voltage power switch handling 390 V DC bus with 50–75 kHz switching frequency.

Use Value: R_DS(on) ≤ 0.6 Ω and Q_g ≤ 40 nC reduce total power loss to < 2.5 W at 7 A, improving efficiency to >94% at full load.

Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating from −48 V DC backup and AC line input.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET controlling inductor current in continuous conduction mode (CCM).

Use Value: Low C_oss (39 pF) and dV/dt capability (3 V/ns) prevent false triggering during high dv/dt transitions in multi-phase PFC.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string-level MPPT optimizer or microinverter H-bridge output stage.

IC Role / Device Role / Timing Role: 600 V blocking switch managing bidirectional energy flow between PV panel and grid-tied inverter stage.

Use Value: Avalanche rating (E_AS = 43 mJ) absorbs transient energy from lightning-induced surges on rooftop arrays without failure.

Use Scenario: Inverter leg switch in 0.75–2.2 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase inverter output stage operating at 8–16 kHz carrier frequency.

Use Value: 150 °C T_J rating and R_thJC = 1.6 °C/W allow sustained 5 A RMS current with passive heatsink, reducing system cost vs. TO-247 solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	600 V, 6.5 A, R_DS(on) = 0.75 Ω, Q_g = 42 nC, TO-220FP package	Higher R_DS(on) and through-hole mounting require larger PCB area and less efficient thermal path	Select when legacy TO-220 layout exists and lower gate charge is not critical
IXTH7N60L2	600 V, 7 A, R_DS(on) = 0.65 Ω, Q_g = 36 nC, TO-247 package	Superior gate charge but larger TO-247 footprint and higher cost; no DPAK-compatible thermal solution	Select when maximum switching efficiency is prioritized over board space and assembly cost

Compared with STP7NK60ZFP and IXTH7N60L2, SIHD7N60ET4-GE3 delivers best-in-class thermal resistance (1.6 °C/W) in surface-mount form factor, enabling higher power density in space-limited telecom and solar applications where DPAK reflow compatibility and thermal management are decisive.

Availability

SIHD7N60ET4-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.

Supply support for SIHD7N60ET4-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFETs, including SIHD7N60ET4-GE3, were designed for high-efficiency, high-voltage switching in offline power conversion - emphasizing low FOM, avalanche ruggedness, and robust SOA for industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHD7N60ET4-GE3 at 100 °C case temperature?

The SIHD7N60ET4-GE3 has a maximum continuous drain current (I_D) of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 7 A rating at 25 °C, based on a linear derating factor of 0.63 W/°C and R_thJC = 1.6 °C/W. Designers must ensure heatsink design sustains this case temperature under full-load conditions to avoid exceeding junction limits.

Does SIHD7N60ET4-GE3 support logic-level gate drive?

No, SIHD7N60ET4-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, but it is fully enhanced and specified for R_DS(on) at V_GS = 10 V. Driving it with only 5 V may result in incomplete turn-on and excessive conduction loss. A dedicated 10 V gate driver or level-shifter is required for reliable operation in SMPS and PFC applications.

What is the significance of the "T4" suffix in SIHD7N60ET4-GE3?

The "T4" in SIHD7N60ET4-GE3 denotes the tape-and-reel packaging option: 2,500 units per reel, standard for automated SMT placement. It distinguishes this variant from SiHD7N60E-GE3 (bulk), SiHD7N60ET1-GE3 (1,000/reel), and SiHD7N60ET5-GE3 (5,000/reel). All share identical electrical specs and DPAK (TO-252) mechanical form factor.

How does the body diode performance of SIHD7N60ET4-GE3 impact its use in synchronous rectification?

The SIHD7N60ET4-GE3 body diode has t_rr = 230 ns and Q_rr = 1.9 μC at T_J = 25 °C, making it unsuitable for high-frequency synchronous rectification (>100 kHz) due to reverse recovery losses. It is intended for freewheeling and clamping roles in hard-switched topologies, not as a primary rectifier. For synchronous designs, a dedicated Schottky or GaN FET is recommended instead.

Is SIHD7N60ET4-GE3 suitable for use in automotive under-hood applications?

No, SIHD7N60ET4-GE3 is not qualified for automotive under-hood use. While its T_J range extends to +150 °C, it lacks AEC-Q101 qualification, automotive-grade screening, and guaranteed parametric stability across automotive temperature and lifetime requirements. It is rated for industrial and commercial applications only, per Vishay's material categorization and reliability documentation.

SIHD7N60ET4-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD7N60ET4-GE3 FAQ

1.How can I place an order for SIHD7N60ET4-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD7N60ET4-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD7N60ET4-GE3 reliable?

The price and inventory of SIHD7N60ET4-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD7N60ET4-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD7N60ET4-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD7N60ET4-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD7N60ET4-GE3?

SIHD7N60ET4-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD7N60ET4-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD7N60ET4-GE3?

For technical support, including SIHD7N60ET4-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD7N60ET4-GE3 requirements.

6.How does Aetrix verify that SIHD7N60ET4-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD7N60ET4-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD7N60ET4-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD7N60ET4-GE3?

All SIHD7N60ET4-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD7N60ET4-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD7N60ET4-GE3 part is unused and in its original packaging.

Return procedure for SIHD7N60ET4-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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