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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHD7N60ET5-GE3

Name: SIHD7N60ET5-GE3
Brand: Vishay Siliconix
SKU: SIHD7N60ET5-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHD7N60ET5-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHD7N60ET5-GE3.pdf

Description:: MOSFET N-CH 600V 7A TO252AA

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Product details

Overview

SIHD7N60ET5-GE3 from Vishay Siliconix is a 600 V, 7 A N-channel enhancement-mode Power MOSFET in DPAK (TO-252) package, optimized for high-voltage switching in offline SMPS and PFC stages. It delivers R_DS(on) ≤ 0.6 Ω at V_GS = 10 V, Q_g ≤ 40 nC, and avalanche-rated E_AS = 43 mJ - enabling efficient, robust operation in telecom rectifiers and solar PV inverters.

For engineers reviewing the SIHD7N60ET5-GE3 datasheet, SIHD7N60ET5-GE3 pinout, SIHD7N60ET5-GE3 application, or SIHD7N60ET5-GE3 equivalent, key selection criteria include its 600 V V_DS rating, low gate charge for reduced switching loss, TO-252 thermal performance (R_thJC = 1.6 °C/W), and UIS ruggedness in hard-switched topologies.

Technical Context

This MOSFET uses planar VDMOS technology with optimized cell pitch and trench-assisted drift region design to achieve low R_DS(on) × Q_g figure-of-merit (FOM). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures stable turn-on under wide input voltage ranges in 85–265 VAC front-end converters.

The integral body diode features t_rr = 230 ns and Q_rr = 1.9 μC at T_J = 25 °C, supporting ZVS-capable flyback and LLC resonant designs. Thermal resistance R_thJC = 1.6 °C/W enables 78 W continuous power dissipation at T_C = 25 °C without forced cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus with 50 % margin for surge transients in industrial PFC and server PSU inputs
R_DS(on) max @ 10 V	0.6 Ω - limits conduction loss to ≤ 14.7 W at 7 A DC, enabling compact heatsink design
Q_g max	40 nC - reduces gate drive power and enables use of low-current drivers (e.g., 1 A peak) in high-frequency (>100 kHz) operation
E_AS	43 mJ - withstands unclamped inductive switching events in motor drives and welding inverters without failure
C_iss	680 pF - minimizes Miller effect during high-dV/dt transitions, improving noise immunity in crowded PCB layouts
t_r/t_f	13–26 ns / 14–28 ns - enables fast switching with controlled EMI, suitable for 300–500 kHz SMPS designs
T_J range	−55 to +150 °C - supports operation in sealed enclosures and outdoor renewable energy installations

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal conduction to PCB copper; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 1.78 mm (L × W × H), compatible with IPC-7351B footprint "DPAK_SMD".

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	High-impedance control terminal requiring <100 nA leakage current; connects to PWM controller output via series resistor (9.1 Ω typical) for dV/dt control
Pin 2 (D)	Drain	Main high-side power terminal tied to DC bus or transformer primary; electrically connected to exposed metal tab for thermal and electrical grounding
Pin 3 (S)	Source	Power return path and reference for gate drive; routed to low-inductance ground plane to minimize switching oscillation

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	≤ 24 Ω·nC - directly improves efficiency in both conduction and switching domains across 50–500 kHz operating range
Avalanche energy rating (E_AS)	43 mJ - eliminates need for external snubbers in inductive load switching, reducing BOM count and layout area
Body diode Q_rr	1.9 μC - lowers reverse recovery loss in synchronous rectification and bidirectional topologies like active clamp forward
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile - supports lead-free assembly up to 260 °C peak
Maximum R_thJC	1.6 °C/W - allows >70 % of rated power to be dissipated through PCB copper, reducing reliance on external heatsinks

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 1 kW+ 80 PLUS Titanium AC/DC front-end modules. IC Role / Device Role / Timing Role: High-voltage switch in continuous conduction mode (CCM) PFC boost stage. Use Value: Low Q_g and C_iss enable >96 % efficiency at 230 VAC full load while maintaining THD <5 %.	Use Scenario: Output rectification and isolation in −48 V telecom DC/DC brick converters. IC Role / Device Role / Timing Role: Synchronous rectifier in phase-shifted full-bridge topology. Use Value: 1.2 V V_SD and 230 ns t_rr reduce conduction loss by 35 % vs. Schottky alternatives at 100 kHz.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC link switching in string inverters handling 600–1000 V DC input. IC Role / Device Role / Timing Role: High-side switch in three-level NPC (neutral-point-clamped) inverter leg. Use Value: 600 V rating and 43 mJ E_AS support safe operation during grid fault conditions without desaturation protection.	Use Scenario: IGBT gate driving and auxiliary power supply switching in servo amplifier power stages. IC Role / Device Role / Timing Role: Isolated DC/DC converter switch feeding isolated gate driver rails. Use Value: R_thJC = 1.6 °C/W sustains 7 A continuous current at T_C = 100 °C in enclosed cabinet environments.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 1 kW+ 80 PLUS Titanium AC/DC front-end modules.

IC Role / Device Role / Timing Role: High-voltage switch in continuous conduction mode (CCM) PFC boost stage.

Use Value: Low Q_g and C_iss enable >96 % efficiency at 230 VAC full load while maintaining THD <5 %.

Use Scenario: Output rectification and isolation in −48 V telecom DC/DC brick converters.

IC Role / Device Role / Timing Role: Synchronous rectifier in phase-shifted full-bridge topology.

Use Value: 1.2 V V_SD and 230 ns t_rr reduce conduction loss by 35 % vs. Schottky alternatives at 100 kHz.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC link switching in string inverters handling 600–1000 V DC input.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC (neutral-point-clamped) inverter leg.

Use Value: 600 V rating and 43 mJ E_AS support safe operation during grid fault conditions without desaturation protection.

Use Scenario: IGBT gate driving and auxiliary power supply switching in servo amplifier power stages.

IC Role / Device Role / Timing Role: Isolated DC/DC converter switch feeding isolated gate driver rails.

Use Value: R_thJC = 1.6 °C/W sustains 7 A continuous current at T_C = 100 °C in enclosed cabinet environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	600 V, 7 A, R_DS(on) = 0.75 Ω, Q_g = 42 nC, TO-220FP package	Higher R_DS(on) increases conduction loss by ~25 %; through-hole mounting requires wave soldering or manual assembly	Preferred where mechanical robustness outweighs efficiency; not drop-in due to different footprint and thermal path
IXTH7N60L2	600 V, 7 A, R_DS(on) = 0.65 Ω, Q_g = 36 nC, TO-247 package	Lower Q_g improves switching efficiency but larger TO-247 footprint consumes 3× PCB area vs. DPAK	Selected when higher peak current capability (IDM = 28 A) and enhanced heatsinking are required over space-constrained designs

Compared with STP7NK60ZFP and IXTH7N60L2, SIHD7N60ET5-GE3 offers optimal balance of surface-mount compatibility, thermal performance per unit area, and low-loss switching - making it preferred for high-density, convection-cooled power supplies where board space and assembly cost are critical.

Availability

SIHD7N60ET5-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHD7N60ET5-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFETs - including SIHD7N60ET5-GE3 - were engineered for high-efficiency, high-voltage switching in offline power conversion, emphasizing low FOM, avalanche ruggedness, and thermally efficient packaging.

FAQ

What is the maximum continuous drain current rating for SIHD7N60ET5-GE3 at 100 °C case temperature?

The SIHD7N60ET5-GE3 supports 5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and ensures junction temperature remains within the −55 to +150 °C operating range. At T_C = 25 °C, the rating rises to 7 A with appropriate PCB copper area.

Does SIHD7N60ET5-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHD7N60ET5-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 43 mJ, measured per JEDEC standard JESD24-1 using L = 13.8 mH, R_g = 25 Ω, I_AS = 2.5 A, and starting T_J = 25 °C. This rating validates ruggedness in unclamped inductive switching, such as PFC boost choke or motor drive freewheeling paths.

What is the gate threshold voltage range for SIHD7N60ET5-GE3, and why does it matter for drive circuit design?

The SIHD7N60ET5-GE3 has a V_GS(th) range of 2–4 V at I_D = 250 μA. This tight threshold ensures consistent turn-on behavior across temperature and process variation, allowing reliable operation with standard 10 V gate drivers while avoiding partial turn-on in noisy environments - critical for stable PFC and inverter operation.

Can SIHD7N60ET5-GE3 be used in synchronous rectification applications, and what body diode parameters support this?

Yes, SIHD7N60ET5-GE3 is suitable for synchronous rectification due to its characterized body diode: V_SD = 1.2 V at I_S = 3.5 A and T_J = 25 °C, t_rr = 230 ns, and Q_rr = 1.9 μC. These values enable lower forward loss and reduced recovery loss versus discrete Schottky diodes in 100–300 kHz DC/DC converters.

What PCB layout recommendations apply to the SIHD7N60ET5-GE3 DPAK package for optimal thermal and electrical performance?

For SIHD7N60ET5-GE3, Vishay recommends minimum copper pads per Application Note 826: 10.67 mm × 5.69 mm for the drain tab, with ≥2 oz copper and thermal vias (≥6 × 0.3 mm) to inner ground planes. Gate and source traces must be short and low-inductance; source should connect directly to power ground plane to minimize ringing during switching transitions.

SIHD7N60ET5-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHD7N60ET5-GE3 FAQ

1.How can I place an order for SIHD7N60ET5-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHD7N60ET5-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHD7N60ET5-GE3 reliable?

The price and inventory of SIHD7N60ET5-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHD7N60ET5-GE3 is usually 5 days.

3.What payment methods are accepted for SIHD7N60ET5-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHD7N60ET5-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHD7N60ET5-GE3?

SIHD7N60ET5-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHD7N60ET5-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHD7N60ET5-GE3?

For technical support, including SIHD7N60ET5-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHD7N60ET5-GE3 requirements.

6.How does Aetrix verify that SIHD7N60ET5-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHD7N60ET5-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHD7N60ET5-GE3 meets industry standards.

7.What is the process for return or replacement of SIHD7N60ET5-GE3?

All SIHD7N60ET5-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHD7N60ET5-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHD7N60ET5-GE3 part is unused and in its original packaging.

Return procedure for SIHD7N60ET5-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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