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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF074N65E-GE3

Name: SIHF074N65E-GE3
Brand: Vishay Siliconix
SKU: SIHF074N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF074N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF074N65E-GE3.pdf

Description:: E SERIES POWER MOSFET TO-220 FUL

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF074N65E-GE3 from Vishay Siliconix is a 650 V, 14 A (T_C = 25 °C), N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.070 Ω (V_GS = 10 V), Q_g = 53 nC (typ.), and avalanche-rated (E_AS = 173 mJ). It serves as a high-voltage switching element in primary-side SMPS and PFC stages.

For engineers reviewing the SIHF074N65E-GE3 datasheet, SIHF074N65E-GE3 pinout, SIHF074N65E-GE3 application, or SIHF074N65E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), Co(er) = 115 pF for reduced switching loss, UIS rating, and TO-220 FULLPAK thermal performance (R_thJC = 3.2 °C/W).

Technical Context

This 4th-generation E-series MOSFET employs planar high-voltage silicon technology optimized for hard-switched 650 V applications. Its gate charge profile (Q_gs = 20 nC, Q_gd = 19 nC) supports controlled dv/dt and reduced Miller-induced turn-off delay, while the integral body diode exhibits t_rr = 447 ns (typ.) and Q_rr = 7 μC at 25 °C.

The device operates with V_GS(th) = 3.0–5.0 V and is rated for T_J = –55 to +150 °C. Its linear SOA and 100 V/ns dv/dt capability enable robust operation in clamped inductive switching, and the TO-220 FULLPAK construction provides enhanced thermal coupling between die and heatsink via exposed drain copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Supports 400 V DC bus designs with ≥30 % margin for transient overvoltage in telecom/server PSUs
R_DS(on) typ.	0.070 Ω @ V_GS = 10 V - Enables <1.0 W conduction loss at 14 A, critical for high-efficiency PFC boost stages
Q_g typ.	53 nC - Low gate drive power requirement; compatible with standard 1–2 A gate drivers at 100–300 kHz
E_AS	173 mJ - Rated unclamped inductive switching energy ensures reliability in hard-switched flyback/LLC primary side
R_thJC	3.2 °C/W - Enables >30 W continuous dissipation with modest heatsinking in TO-220 FULLPAK form factor
C_o(er)	115 pF - Energy-related output capacitance directly impacts turn-on loss in hard-switched topologies
t_r/t_f	53/29 ns (typ.) - Fast switching transitions reduce overlap loss without excessive EMI generation

Pinout & Package

TO-220 FULLPAK package with isolated tab (drain-connected), 3-terminal configuration, and exposed copper drain pad for direct heatsink mounting. Thermal resistance R_thJC = 3.2 °C/W measured from junction to case (drain).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; V_GS(th) = 3.0–5.0 V enables compatibility with standard PWM controllers
D (Drain)	High-voltage power terminal	Internally connected to exposed copper tab; must be electrically isolated from heatsink unless system ground referenced
S (Source)	Power return / reference node	Common return for gate drive and current sensing; low-inductance layout essential for stable switching

Key Features

Feature	Design Value
4th-gen E-series technology	Optimized cell pitch and trench geometry deliver best-in-class R_DS(on) × Q_g FOM for 650 V class
Avalanche energy rating	E_AS = 173 mJ ensures ruggedness against inductive switching stress without external snubbers
Low C_o(er)	115 pF minimizes turn-on loss in hard-switched converters operating above 100 kHz
TO-220 FULLPAK thermal design	Exposed drain pad reduces R_thJC to 3.2 °C/W-25 % lower than standard TO-220 for same footprint
Body diode Q_rr	7 μC (typ.) enables moderate-frequency synchronous rectification or freewheeling in PFC and LLC

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW front-end AC-DC converter with active PFC and LLC resonant stage. IC Role / Device Role / Timing Role: High-voltage switching transistor in boost PFC and LLC half-bridge primary leg. Use Value: 0.070 Ω R_DS(on) and 53 nC Q_g enable >96 % efficiency at full load while maintaining thermal headroom on shared heatsink.	Use Scenario: 48 V telecom rectifier module with universal AC input and distributed power architecture. IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) PFC stage and forward converter primary. Use Value: Avalanche rating (173 mJ) and 100 V/ns dv/dt capability ensure reliability under line surge and load dump conditions.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switch in string-level 3-phase inverter with 1000 V DC input. IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter topology. Use Value: 650 V V_DS rating with 30 % derating margin supports 1000 V DC bus with IEC 62109-compliant overvoltage protection.	Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drive with regenerative braking. IC Role / Device Role / Timing Role: Phase-leg switch handling bidirectional current and reverse recovery during PWM commutation. Use Value: Body diode t_rr = 447 ns and Q_rr = 7 μC minimize shoot-through risk and switching loss during freewheeling intervals.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW front-end AC-DC converter with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage switching transistor in boost PFC and LLC half-bridge primary leg.

Use Value: 0.070 Ω R_DS(on) and 53 nC Q_g enable >96 % efficiency at full load while maintaining thermal headroom on shared heatsink.

Use Scenario: 48 V telecom rectifier module with universal AC input and distributed power architecture.

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) PFC stage and forward converter primary.

Use Value: Avalanche rating (173 mJ) and 100 V/ns dv/dt capability ensure reliability under line surge and load dump conditions.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switch in string-level 3-phase inverter with 1000 V DC input.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC or T-type inverter topology.

Use Value: 650 V V_DS rating with 30 % derating margin supports 1000 V DC bus with IEC 62109-compliant overvoltage protection.

Use Scenario: Inverter output stage in 7.5 kW HVAC compressor drive with regenerative braking.

IC Role / Device Role / Timing Role: Phase-leg switch handling bidirectional current and reverse recovery during PWM commutation.

Use Value: Body diode t_rr = 447 ns and Q_rr = 7 μC minimize shoot-through risk and switching loss during freewheeling intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N65M5	R_DS(on) = 0.065 Ω, Q_g = 65 nC, TO-247 package, no UIS rating	Higher peak current capability but larger footprint and no avalanche qualification	Preferred where PCB space allows TO-247 and avalanche robustness is not required
IXFH30N65X2	R_DS(on) = 0.095 Ω, Q_g = 42 nC, TO-247, 650 V, no Co(er) spec	Lower gate charge but higher conduction loss; optimized for ZVS/ZCS topologies	Selected when gate drive power is constrained and conduction loss is secondary to switching loss

Compared with STW48N65M5 and IXFH30N65X2, SIHF074N65E-GE3 offers the lowest R_DS(on) × Q_g FOM in TO-220 FULLPAK, combined with certified UIS rating-making it optimal for cost-sensitive, space-constrained 650 V hard-switched PFC and SMPS designs requiring proven ruggedness.

Availability

SIHF074N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term industrial lifecycle support, and lead(Pb)-free/halogen-free compliance.

Supply support for SIHF074N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switching applications in server, telecom, industrial, and renewable energy systems-designed specifically for demanding 600–650 V hard-switched topologies.

FAQ

What is the maximum continuous drain current rating for SIHF074N65E-GE3 at 100 °C case temperature?

The SIHF074N65E-GE3 has a continuous drain current rating of 9 A at T_C = 100 °C, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures safe operation within the 150 °C maximum junction temperature. The SIHF074N65E-GE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHF074N65E-GE3 support gate drive with 5 V logic-level controllers?

No-SIHF074N65E-GE3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) is specified from 3.0 V to 5.0 V, but R_DS(on) = 0.070 Ω is guaranteed only at V_GS = 10 V. Driving SIHF074N65E-GE3 with 5 V may result in incomplete enhancement and excessive conduction loss; a 10–12 V gate drive is required for full performance.

Is SIHF074N65E-GE3 qualified for unclamped inductive switching (UIS)?

Yes-SIHF074N65E-GE3 is fully rated for unclamped inductive switching with E_AS = 173 mJ (single-pulse, test condition: V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.5 A). This UIS qualification is documented in the Absolute Maximum Ratings table and confirms ruggedness in hard-switched flyback, forward, and resonant converter primary-side applications.

What is the thermal resistance from junction to case (R_thJC) for SIHF074N65E-GE3?

The maximum junction-to-case (drain) thermal resistance R_thJC for SIHF074N65E-GE3 is 3.2 °C/W, as specified in the Thermal Resistance Ratings table. This value is measured from the silicon die to the exposed drain pad of the TO-220 FULLPAK package and is critical for calculating junction temperature rise under steady-state power dissipation.

How does the body diode performance of SIHF074N65E-GE3 compare to standard fast recovery diodes?

The SIHF074N65E-GE3 body diode has t_rr = 447 ns (typ.) and Q_rr = 7 μC at 25 °C, which is slower and higher-charge than dedicated fast recovery diodes-but sufficient for freewheeling in PFC and motor drive applications where synchronous rectification is not used. Its V_SD = 1.2 V at I_S = 19 A ensures low forward conduction loss during reverse recovery intervals. The SIHF074N65E-GE3 body diode is not intended for high-frequency rectification.

SIHF074N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 79mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2904 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF074N65E-GE3 FAQ

1.How can I place an order for SIHF074N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF074N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF074N65E-GE3 reliable?

The price and inventory of SIHF074N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF074N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF074N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF074N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF074N65E-GE3?

SIHF074N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF074N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF074N65E-GE3?

For technical support, including SIHF074N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF074N65E-GE3 requirements.

6.How does Aetrix verify that SIHF074N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF074N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF074N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF074N65E-GE3?

All SIHF074N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF074N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF074N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHF074N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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