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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF080N60E-GE3

Name: SIHF080N60E-GE3
Brand: Vishay Siliconix
SKU: SIHF080N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF080N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF080N60E-GE3.pdf

Description:: E SERIES POWER MOSFET TO-220 FUL

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Product details

Overview

SIHF080N60E-GE3 from Vishay Siliconix is a 600 V, 14 A (T_C = 25 °C), N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.070 Ω (typ. at V_GS = 10 V), Q_g = 42 nC (typ.), and avalanche-rated UIS capability - deployed in telecom power supplies, PFC stages, and PV inverters.

For engineers reviewing the SIHF080N60E-GE3 datasheet, SIHF080N60E-GE3 pinout, SIHF080N60E-GE3 application, or SIHF080N60E-GE3 equivalent, key selection criteria include its 600 V blocking rating, low FOM (R_DS(on) × Q_g), Co(er) = 79 pF for reduced switching loss, and TO-220 FULLPAK thermal performance with R_thJC = 3.6 °C/W.

Technical Context

This E-series MOSFET uses 4th-generation silicon technology optimized for high-voltage SMPS topologies. It delivers low conduction loss via 0.070 Ω R_DS(on) and low switching loss via 42 nC total gate charge and 79 pF effective output capacitance (Co(er)) at V_DS = 480 V.

The device supports unclamped inductive switching with 226 mJ single-pulse avalanche energy (E_AS) and operates across -55 °C to +150 °C junction temperature. Its body diode exhibits t_rr = 441 ns (typ.) and Q_rr = 5.2 μC at I_F = 17 A, enabling robust hard-switched PFC operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient overvoltage in telecom and solar inverters
R_DS(on) typ.	0.070 Ω at V_GS = 10 V - enables <1.2 W conduction loss at 14 A continuous drain current (T_C = 25 °C)
Q_g typ.	42 nC - reduces gate drive power requirement and allows use of lower-cost 1–2 W gate drivers in 100–300 kHz PFC stages
E_AS	226 mJ - ensures ruggedness against inductive turn-off transients without external snubbers in motor drives and welders
Co(er)	79 pF - lowers capacitive switching loss during hard commutation, critical for efficiency in 65–100 kHz SMPS
R_thJC	3.6 °C/W - enables 35 W power dissipation with ≤125 °C case-to-junction rise, supporting compact heatsink designs
t_rr typ.	441 ns - minimizes reverse recovery-related shoot-through risk and EMI in bridge-leg configurations

Pinout & Package

TO-220 FULLPAK package with isolated tab (drain-connected), 3-pin through-hole outline, 15.87 mm length, 10.10 mm width, and 4.70 mm height. Exposed copper drain pad enhances thermal transfer to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level gate drive; threshold V_GS(th) = 3.0–5.0 V ensures reliable turn-on with standard PWM controllers
D (Drain)	High-side power switch node	Connected to exposed tab; rated for 600 V blocking and 96 A pulsed current - requires insulated mounting in high-voltage systems
S (Source)	Power return and reference node	Serves as local ground for gate driver; supports 35 A continuous body diode conduction - critical for synchronous rectification and bidirectional topologies

Key Features

Feature	Design Value
4th-generation E-series silicon	Optimized cell layout delivering 22 % lower R_DS(on) × Q_g FOM vs. prior generation - directly improves system efficiency at 100 kHz
Avalanche energy rated (UIS)	226 mJ single-pulse rating - eliminates need for external clamping in flyback and resonant converters under overload conditions
Low Co(er)	79 pF effective output capacitance - reduces turn-off loss by ~30 % compared to legacy 600 V MOSFETs with similar R_DS(on)
Enhanced body diode	t_rr = 441 ns and Q_rr = 5.2 μC - enables zero-voltage switching (ZVS) assist in LLC and reduces diode-induced EMI in PFC boost stages
Lead (Pb)-free & halogen-free	Meets RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912 - supports industrial and telecom compliance requirements

Applications

Telecom Power Supplies	PV Inverters
Use Scenario: Primary-side switching in 3.5 kW telecom rectifiers operating at 100 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: High-side hard-switched power switch in phase-shifted full-bridge topology. Use Value: 0.070 Ω R_DS(on) and 42 nC Q_g reduce total losses by 1.8 W vs. comparable 650 V MOSFETs, improving system efficiency from 95.1 % to 95.6 %.	Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge output stage handling 12 A RMS current. Use Value: 226 mJ E_AS withstands lightning-induced surges on DC input without failure, extending field reliability beyond 15-year design life.
Industrial Motor Drives	Fluorescent Ballast Lighting
Use Scenario: Inverter leg switching in 2.2 kW HVAC compressors using space-vector PWM at 8 kHz. IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current. Use Value: 441 ns t_rr and 5.2 μC Q_rr limit diode reverse recovery loss to <0.35 W, reducing heatsink size by 25 %.	Use Scenario: Resonant half-bridge switch in electronic ballasts driving 40–60 W T8 lamps at 40–60 kHz. IC Role / Device Role / Timing Role: Fast-switching power transistor controlling lamp ignition and regulation. Use Value: 79 pF Co(er) enables clean zero-voltage turn-on, suppressing acoustic noise and extending lamp life by >20 %.

Telecom Power Supplies

PV Inverters

Use Scenario: Primary-side switching in 3.5 kW telecom rectifiers operating at 100 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-side hard-switched power switch in phase-shifted full-bridge topology.

Use Value: 0.070 Ω R_DS(on) and 42 nC Q_g reduce total losses by 1.8 W vs. comparable 650 V MOSFETs, improving system efficiency from 95.1 % to 95.6 %.

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge output stage handling 12 A RMS current.

Use Value: 226 mJ E_AS withstands lightning-induced surges on DC input without failure, extending field reliability beyond 15-year design life.

Industrial Motor Drives

Fluorescent Ballast Lighting

Use Scenario: Inverter leg switching in 2.2 kW HVAC compressors using space-vector PWM at 8 kHz.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current.

Use Value: 441 ns t_rr and 5.2 μC Q_rr limit diode reverse recovery loss to <0.35 W, reducing heatsink size by 25 %.

Use Scenario: Resonant half-bridge switch in electronic ballasts driving 40–60 W T8 lamps at 40–60 kHz.

IC Role / Device Role / Timing Role: Fast-switching power transistor controlling lamp ignition and regulation.

Use Value: 79 pF Co(er) enables clean zero-voltage turn-on, suppressing acoustic noise and extending lamp life by >20 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW60N60DM6	R_DS(on) = 0.065 Ω (lower), Q_g = 52 nC (higher), TO-247 package, no UIS rating	Better conduction loss but higher gate drive loss; lacks avalanche ruggedness for unclamped inductive loads	Prefer SIHF080N60E-GE3 where surge immunity and thermal density (TO-220 FULLPAK) are prioritized over minimal R_DS(on)
IXFH60N60P	R_DS(on) = 0.075 Ω (higher), Q_g = 38 nC (lower), TO-247, 270 mJ E_AS, higher C_iss (3100 pF)	Lower switching loss but higher conduction loss; larger package increases PCB area and thermal path resistance	Prefer SIHF080N60E-GE3 when board space, cost, and thermal interface simplicity outweigh marginal Q_g advantage

Compared with STW60N60DM6 and IXFH60N60P, SIHF080N60E-GE3 offers optimal balance of R_DS(on), Q_g, avalanche rating, and TO-220 FULLPAK thermal performance - making it preferred for cost-sensitive, space-constrained 600 V SMPS requiring field-proven ruggedness.

Availability

SIHF080N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHF080N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching applications - designed specifically for telecom rectifiers, solar inverters, and industrial PFC circuits demanding low FOM and avalanche ruggedness.

FAQ

What is the maximum continuous drain current rating for SIHF080N60E-GE3 at 100 °C case temperature?

The SIHF080N60E-GE3 supports 9 A continuous drain current at T_C = 100 °C, derated linearly from 14 A at 25 °C using the 0.28 W/°C derating factor. This rating reflects real-world thermal constraints in enclosed power supplies and ensures safe operation without exceeding 150 °C maximum junction temperature. The SIHF080N60E-GE3 datasheet specifies this value in the Absolute Maximum Ratings table under "Continuous drain current (T_J = 150 °C)".

Does SIHF080N60E-GE3 have a fully rated avalanche capability, and what is its test condition?

Yes, SIHF080N60E-GE3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 226 mJ. The test condition is V_DD = 120 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.0 A - per note b in the Absolute Maximum Ratings table. This validated ruggedness makes SIHF080N60E-GE3 suitable for flyback and resonant converters where voltage spikes exceed V_DS rating.

What is the typical gate threshold voltage range for SIHF080N60E-GE3, and how does it affect drive circuit design?

The SIHF080N60E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise coupling. Because the SIHF080N60E-GE3 is not a logic-level device, 5 V-only microcontroller outputs cannot drive it directly - a level-shifting gate driver or dedicated MOSFET driver IC is required for full enhancement.

How does the body diode performance of SIHF080N60E-GE3 compare to standard 600 V MOSFETs in PFC applications?

The SIHF080N60E-GE3 features an optimized body diode with t_rr = 441 ns (typ.) and Q_rr = 5.2 μC at I_F = 17 A - significantly faster and lower-charge than standard 600 V MOSFETs (typically t_rr > 600 ns, Q_rr > 8 μC). In boost PFC stages, this reduces reverse recovery loss and associated EMI, allowing higher switching frequencies and smaller EMI filters. The SIHF080N60E-GE3 datasheet confirms these values in the "Drain-Source Body Diode Characteristics" section.

Is SIHF080N60E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHF080N60E-GE3 is lead (Pb)-free and halogen-free, qualified for peak reflow temperatures up to 260 °C for 10 seconds - matching IPC/JEDEC J-STD-020D.3 requirements. The TO-220 FULLPAK package uses matte tin plating and passes thermal shock and moisture sensitivity level (MSL) testing per Vishay's internal qualification. This makes SIHF080N60E-GE3 suitable for modern automated SMT assembly lines without requiring special process adjustments.

SIHF080N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2557 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF080N60E-GE3 FAQ

1.How can I place an order for SIHF080N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF080N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF080N60E-GE3 reliable?

The price and inventory of SIHF080N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF080N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF080N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF080N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF080N60E-GE3?

SIHF080N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF080N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF080N60E-GE3?

For technical support, including SIHF080N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF080N60E-GE3 requirements.

6.How does Aetrix verify that SIHF080N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF080N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF080N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF080N60E-GE3?

All SIHF080N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF080N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF080N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHF080N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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