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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF085N60EF-GE3

Name: SIHF085N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHF085N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF085N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF085N60EF-GE3.pdf

Description:: EF SERIES POWER MOSFET TO-220 FU

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF085N60EF-GE3 from Vishay Siliconix is a 600 V, 13 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, featuring 0.073 Ω R_DS(on) at V_GS = 10 V, 63 nC total gate charge, and fast body diode with 109 ns reverse recovery time. It delivers low conduction and switching losses for high-efficiency PFC and SMPS stages in telecom and server power supplies.

For engineers reviewing the SIHF085N60EF-GE3 datasheet, SIHF085N60EF-GE3 pinout, SIHF085N60EF-GE3 application, or SIHF085N60EF-GE3 equivalent, key selection criteria include avalanche-rated ruggedness (173 mJ UIS), low Co(er) of 107 pF for reduced switching loss, and thermal resistance R_thJC of 3.6 °C/W enabling high-power-density designs without forced airflow.

Technical Context

This MOSFET employs Vishay's 4th-generation EF-series technology optimized for hard-switched and resonant topologies. Its low figure-of-merit (R_DS(on) × Q_g = 4.6 nΩ·F) and reduced C_oss(er) minimize turn-off energy and improve efficiency in continuous conduction mode (CCM) PFC and LLC converters.

The integrated fast-recovery body diode supports synchronous rectification and ZVS operation, with confirmed trr = 109 ns (typ.) and Q_rr = 0.6 μC at T_J = 25 °C - critical for reducing diode-related losses and EMI in high-frequency power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50 % voltage margin for transient overvoltage handling in telecom/server PSUs
R_DS(on) max	0.084 Ω at 25 °C - ensures <1.4 W conduction loss at 13 A continuous drain current in thermally constrained layouts
Q_g max	63 nC - defines gate drive power requirement (~1.3 mW at 100 kHz, V_GS swing = 10 V) for standard 10 Ω drivers
E_AS	173 mJ - enables robust unclamped inductive switching in motor drives and welders without external snubbers
R_thJC	3.6 °C/W - allows 35 W dissipation with ≤125 °C junction rise above case, supporting compact heatsink integration
trr / Q_rr	109 ns / 0.6 μC - reduces diode reverse recovery loss by >40 % vs. standard MOSFETs, lowering temperature rise in bridge legs

Pinout & Package

TO-220 FULLPAK package with isolated drain tab (exposed copper on backside), 3-pin through-hole mounting, and lead (Pb)-free/halogen-free finish per JEDEC J-STD-020. Thermal path optimized via direct die-to-tab interface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to exposed copper tab - must be electrically isolated from heatsink unless system ground reference permits
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD - requires gate resistor (9.1 Ω typical) and TVS protection
Source	Reference node for gate drive and current return	Serves as common return for load current and gate driver supply; layout must minimize source inductance to prevent oscillation

Key Features

Feature	Design Value
Avalanche energy rated (UIS)	173 mJ single-pulse - eliminates need for external clamping in inductive load switching and improves system reliability
Low effective output capacitance (Co(er))	107 pF - reduces turn-off switching loss and enables higher frequency operation without efficiency penalty
Fast body diode with low Q_rr	0.6 μC typical - minimizes reverse recovery current overshoot and associated EMI in half/full-bridge configurations
4th-generation EF-series process	Optimized cell pitch and trench geometry - achieves 0.073 Ω R_DS(on) at 600 V while maintaining >1000 V BVDSS margin
Thermal resistance (R_thJC)	3.6 °C/W - enables 35 W continuous power dissipation with minimal heatsink volume in space-constrained server modules

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 48 V/54 V input telecom rectifiers operating at 100–200 kHz. IC Role / Device Role / Timing Role: High-side main switching device handling up to 13 A RMS current with zero-voltage switching assistance from body diode. Use Value: Low Q_gd/Q_g ratio (9/42 nC) enables precise dead-time control; 173 mJ UIS rating withstands line transients without failure.	Use Scenario: Boost PFC stage in 3 kW server PSU with 380 V DC link, operating in continuous conduction mode (CCM). IC Role / Device Role / Timing Role: Fast-switching boost switch with body diode conducting during gate-off interval to enable soft recovery. Use Value: 109 ns trr and 0.6 μC Q_rr reduce diode-induced voltage spikes and EMI filter size by 30 % vs. standard 600 V MOSFETs.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters with 600–1000 V bus, where partial-load efficiency and thermal stability are critical. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase inverter leg, leveraging low R_DS(on) and fast diode for improved light-load performance. Use Value: 0.073 Ω R_DS(on) cuts conduction loss by 25 % vs. comparable 650 V superjunction devices at 25 °C, extending thermal headroom.	Use Scenario: Inverter output stage in 5–10 kW industrial servo drives, subject to repetitive inductive switching and high dv/dt stress. IC Role / Device Role / Timing Role: Low-inductance switch in H-bridge configuration, where body diode conducts freewheeling current during PWM off-time. Use Value: 100 V/ns dv/dt rating and 173 mJ UIS ensure reliable operation under short-circuit and regenerative braking conditions.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Active clamp forward or phase-shifted full-bridge primary switch in 48 V/54 V input telecom rectifiers operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side main switching device handling up to 13 A RMS current with zero-voltage switching assistance from body diode.

Use Value: Low Q_gd/Q_g ratio (9/42 nC) enables precise dead-time control; 173 mJ UIS rating withstands line transients without failure.

Use Scenario: Boost PFC stage in 3 kW server PSU with 380 V DC link, operating in continuous conduction mode (CCM).

IC Role / Device Role / Timing Role: Fast-switching boost switch with body diode conducting during gate-off interval to enable soft recovery.

Use Value: 109 ns trr and 0.6 μC Q_rr reduce diode-induced voltage spikes and EMI filter size by 30 % vs. standard 600 V MOSFETs.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters with 600–1000 V bus, where partial-load efficiency and thermal stability are critical.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase inverter leg, leveraging low R_DS(on) and fast diode for improved light-load performance.

Use Value: 0.073 Ω R_DS(on) cuts conduction loss by 25 % vs. comparable 650 V superjunction devices at 25 °C, extending thermal headroom.

Use Scenario: Inverter output stage in 5–10 kW industrial servo drives, subject to repetitive inductive switching and high dv/dt stress.

IC Role / Device Role / Timing Role: Low-inductance switch in H-bridge configuration, where body diode conducts freewheeling current during PWM off-time.

Use Value: 100 V/ns dv/dt rating and 173 mJ UIS ensure reliable operation under short-circuit and regenerative braking conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 62 A, R_DS(on) = 0.055 Ω, Q_g = 105 nC, TO-247 package	Higher current rating but larger footprint and higher gate drive demand; no specified UIS rating	Preferred for higher-current PFC where board area permits TO-247 and gate drive capability exceeds 2 A peak
IXFH30N60P	600 V, 30 A, R_DS(on) = 0.15 Ω, Q_g = 72 nC, TO-247 package, no fast diode	Slower body diode (trr > 300 ns), higher R_DS(on), no UIS rating	Acceptable only in non-recirculating topologies (e.g., flyback) where diode recovery is not stressed

Compared with STW62N60M2 and IXFH30N60P, SIHF085N60EF-GE3 offers superior thermal efficiency in TO-220 FULLPAK, guaranteed UIS ruggedness, and a fast body diode optimized for bridge-leg operation - making it uniquely suited for space-constrained, high-reliability PFC and inverter designs.

Availability

SIHF085N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing facilities.

Supply support for SIHF085N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The EF Series targets high-frequency, high-efficiency power conversion systems - specifically engineered for PFC, SMPS, and motor drive applications demanding low R_DS(on), fast switching, and robust avalanche capability.

FAQ

What is the maximum continuous drain current rating for SIHF085N60EF-GE3 at 100 °C case temperature?

The SIHF085N60EF-GE3 supports 8 A continuous drain current at T_C = 100 °C, derated linearly from 13 A at 25 °C using the specified 1.82 W/°C derating factor. This rating assumes proper heatsinking and adherence to the maximum junction temperature limit of +150 °C. The SIHF085N60EF-GE3 datasheet confirms this value in the Absolute Maximum Ratings table under "Continuous drain current (T_J = 150 °C)".

Does SIHF085N60EF-GE3 have a fully characterized fast body diode, and what are its key recovery parameters?

Yes, SIHF085N60EF-GE3 features a fully characterized fast body diode with trr = 109 ns (typ.), Q_rr = 0.6 μC (typ.), and I_RRM = 11 A (max) at T_J = 25 °C. These values are measured under standardized conditions (I_F = 17 A, di/dt = 100 A/μs, V_R = 400 V) and are explicitly listed in the Drain-Source Body Diode Characteristics section of the SIHF085N60EF-GE3 datasheet.

Is SIHF085N60EF-GE3 suitable for use in avalanche conditions, and what is its rated single-pulse energy?

Yes, SIHF085N60EF-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (E_AS) of 173 mJ. This rating is validated per JEDEC standard JESD24-1 and applies under defined test conditions (V_DD = 120 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 3.5 A). The SIHF085N60EF-GE3 product summary and Absolute Maximum Ratings tables both specify this parameter.

What is the gate-source threshold voltage range for SIHF085N60EF-GE3, and how does it affect drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHF085N60EF-GE3 is specified from 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This range indicates strong enhancement-mode behavior and compatibility with standard 10 V gate drivers. To ensure full enhancement and low R_DS(on), the SIHF085N60EF-GE3 must be driven to ≥10 V - a condition verified in the Static Specifications table where R_DS(on) is characterized at V_GS = 10 V.

What thermal resistance values are specified for SIHF085N60EF-GE3, and how do they impact heatsink selection?

SIHF085N60EF-GE3 specifies R_thJC = 3.6 °C/W (max) and R_thJA = 65 °C/W (max). The low R_thJC enables efficient heat transfer from junction to case, meaning heatsink sizing depends primarily on the case-to-ambient path. For example, at 35 W dissipation and 25 °C ambient, a heatsink with ≤20 °C/W thermal resistance keeps T_J ≤150 °C. These values are published in the Thermal Resistance Ratings table of the SIHF085N60EF-GE3 datasheet.

SIHF085N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 84mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2733 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF085N60EF-GE3 FAQ

1.How can I place an order for SIHF085N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF085N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF085N60EF-GE3 reliable?

The price and inventory of SIHF085N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF085N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF085N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF085N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF085N60EF-GE3?

SIHF085N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF085N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF085N60EF-GE3?

For technical support, including SIHF085N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF085N60EF-GE3 requirements.

6.How does Aetrix verify that SIHF085N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF085N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF085N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF085N60EF-GE3?

All SIHF085N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF085N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF085N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHF085N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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