Vishay Siliconix SIHF10N40D-E3

Overview

SIHF10N40D-E3 from Vishay Siliconix is a 400 V, 10 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, featuring 0.6 Ω R_DS(on) at V_GS = 10 V, 30 nC total gate charge, and 194 mJ single-pulse avalanche energy - designed for high-voltage switching in industrial SMPS and motor drive half-bridge legs.

For engineers reviewing the SIHF10N40D-E3 datasheet, SIHF10N40D-E3 pinout, SIHF10N40D-E3 application, or SIHF10N40D-E3 equivalent, key selection criteria include its 400 V V_DS rating, low 0.6 Ω on-resistance at 10 V drive, robust 194 mJ UIS capability, fast 12–24 ns turn-on delay, and TO-220 FULLPAK thermal performance with R_thJC = 3.8 °C/W.

Technical Context

This MOSFET employs planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its low C_iss (526 pF) and C_oss (59 pF) reduce capacitive losses, while the integral body diode supports freewheeling with 230 ns reverse recovery time and 1.6 μC Q_rr.

The device operates with gate threshold voltage of 3–5 V and exhibits positive V_DS temperature coefficient (0.53 V/°C), enabling inherent current sharing in parallel configurations. It is rated for continuous operation up to T_J = 150 °C and supports unclamped inductive switching per JEDEC JESD24-11.

Key Specifications

Pinout & Package

TO-220 FULLPAK package with isolated drain tab, 3-pin through-hole mounting, and exposed copper drain pad for direct heatsink attachment. Thermal resistance R_thJC = 3.8 °C/W measured from junction to case (drain tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP10NK40ZFP and IRF740PBF, the SIHF10N40D-E3 delivers superior thermal performance via its FULLPAK drain-tab construction, guaranteed avalanche capability, and lower Q_g/R_DS(on) trade-off - making it optimal for space-constrained, high-reliability 400 V switching where thermal management and transient resilience are prioritized.

Availability

SIHF10N40D-E3 is available at Aetrix Electronics and suitable for server power supplies, induction heating inverters, industrial motor drives, and high-voltage battery chargers requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHF10N40D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and ruggedness.

The D Series Power MOSFETs, including SIHF10N40D-E3, were engineered for high-voltage industrial switching applications demanding low conduction loss, fast switching, and proven avalanche survivability in harsh electrical environments.

FAQ

What is the maximum continuous drain current rating for SIHF10N40D-E3 at 100 °C case temperature?

The SIHF10N40D-E3 supports 6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures safe operation with standard heatsinking. At T_C = 25 °C, the rating increases to 10 A. Designers must verify junction temperature using R_thJC = 3.8 °C/W and actual power dissipation to avoid exceeding T_J = 150 °C.

Does SIHF10N40D-E3 have avalanche energy rating, and how is it tested?

Yes, the SIHF10N40D-E3 is fully rated for unclamped inductive switching (UIS) with E_AS = 194 mJ, tested per JEDEC JESD24-11 using L = 2.3 mH, R_g = 25 Ω, V_DD = 50 V, and starting T_J = 25 °C. This rating confirms the device can safely absorb inductive energy without failure during abnormal conditions such as short-circuit events or sudden load disconnection - a key reliability feature absent in many generic 400 V MOSFETs.

What is the gate threshold voltage range for SIHF10N40D-E3, and why does it matter for drive circuit design?

The SIHF10N40D-E3 has a gate threshold voltage V_GS(th) of 3–5 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise or leakage. Designers must ensure gate drive exceeds 5 V to achieve full R_DS(on) specification (0.6 Ω); operation near 3 V risks partial turn-on and excessive conduction loss. The positive V_DS temperature coefficient further stabilizes bias across temperature.

How does the TO-220 FULLPAK package of SIHF10N40D-E3 differ from standard TO-220AB in thermal performance?

The TO-220 FULLPAK package used by SIHF10N40D-E3 features an isolated copper drain tab that serves as both electrical drain connection and primary thermal path to the heatsink, achieving R_thJC = 3.8 °C/W - significantly lower than typical TO-220AB (≈4.5–5.5 °C/W). Unlike TO-220AB, FULLPAK eliminates the need for insulating pads when mounting to grounded heatsinks, reducing thermal interface resistance and improving long-term reliability in high-power industrial applications.

What are the key body diode specifications of SIHF10N40D-E3, and where are they critical?

The SIHF10N40D-E3 body diode has V_SD = 1.2 V at I_S = 5 A and T_J = 25 °C, t_rr = 230 ns, Q_rr = 1.6 μC, and I_SM = 40 A pulsed rating. These parameters are critical in half-bridge and synchronous rectifier topologies where the diode conducts freewheeling current. Low Q_rr minimizes reverse recovery loss and EMI; high I_SM supports surge currents during motor startup or inductive load switching - essential for robustness in motor drives and induction heating.