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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF12N50C-E3

Name: SIHF12N50C-E3
Brand: Vishay Siliconix
SKU: SIHF12N50C-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF12N50C-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF12N50C-E3.pdf

Description:: MOSFET N-CH 500V 12A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF12N50C-E3 from Vishay Siliconix is a 500 V, 12 A N-channel power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.555 Ω at V_GS = 10 V, Q_g = 48 nC, and 100 % avalanche tested for robustness in hard-switching SMPS and motor control circuits.

For engineers reviewing the SIHF12N50C-E3 datasheet, SIHF12N50C-E3 pinout, SIHF12N50C-E3 application, or SIHF12N50C-E3 equivalent, this page delivers verified thermal resistance (R_thJC = 0.6 °C/W), body diode recovery (t_rr = 580 ns), safe operating area limits, gate charge profile, and RoHS-compliant lead-free construction - all critical for high-voltage DC-DC converter and industrial AC-DC front-end design.

Technical Context

This MOSFET employs planar high-voltage silicon technology optimized for low R_DS(on) × Q_g figure-of-merit, enabling efficient switching in 50–500 kHz flyback and LLC resonant converters. Its 500 V V_DS rating supports 400 V DC bus operation with margin, while the integral body diode exhibits t_rr = 580 ns and Q_rr = 4.3 μC under standardized 100 A/μs dI/dt conditions.

The device operates across –55 °C to +150 °C junction temperature range and features ±30 V gate-source voltage tolerance. Thermal performance is defined by R_thJC = 0.6 °C/W (junction-to-case) and R_thJA = 65 °C/W (junction-to-ambient, D2PAK variant), with maximum power dissipation rated at 36 W at T_C = 25 °C in TO-220 FULLPAK configuration.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports 400 V DC input with 25 % voltage margin for surge immunity in offline SMPS
R_DS(on)	0.555 Ω max at V_GS = 10 V - Enables <1.5 W conduction loss at 12 A continuous drain current
Q_g	48 nC max - Determines gate drive power requirement and switching speed in hard-switched topologies
t_rr	580 ns typical - Critical for synchronous rectification timing and EMI control in high-frequency converters
E_AS	180 mJ single-pulse - Validates ruggedness against unclamped inductive switching stress in motor drives
I_D (T_C = 25 °C)	12 A continuous - Specifies thermal-limited output capability with heatsink mounting
R_thJC	0.6 °C/W - Defines minimum heatsink thermal resistance needed to maintain T_J ≤ 150 °C

Pinout & Package

SIHF12N50C-E3 is housed in TO-220 FULLPAK package - a modified TO-220 outline with exposed drain pad on underside for enhanced thermal conduction and reduced R_thJC. The package uses lead (Pb)-free terminations per RoHS Directive 2002/95/EC.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; ±30 V absolute max rating prevents gate oxide damage
D (Drain)	High-side power switch node	Connected to PCB copper pour or heatsink; electrically tied to exposed metal tab
S (Source)	Reference node / return path	Provides common reference for gate drive and current sensing; ties to power ground plane

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FoM	Reduces combined conduction and switching losses in high-frequency power stages
100 % avalanche tested	Guarantees single-pulse energy handling up to 180 mJ without parametric shift or failure
Improved t_rr/Q_rr	Minimizes reverse recovery losses and associated voltage spikes during commutation
RoHS-compliant (Pb-free)	Meets EU environmental directive; no exemptions required for termination finish
TO-220 FULLPAK thermal enhancement	0.6 °C/W R_thJC enables higher power density vs. standard TO-220AB (0.6 °C/W vs. 3.5 °C/W)

Applications

Industrial AC-DC Power Supplies	Server & Telecom SMPS
Use Scenario: Primary-side switching in 500–1000 W offline flyback and forward converters with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from primary to secondary winding; operates at 65–130 kHz. Use Value: 500 V V_DS and 180 mJ E_AS ensure reliable operation during line surges and transformer leakage spike events.	Use Scenario: Main power switch in redundant 12 V/48 V intermediate bus converters for data center power shelves. IC Role / Device Role / Timing Role: Synchronous rectifier driver companion in active clamp forward topology; handles 12 A continuous load current. Use Value: Low Q_g (48 nC) and fast t_rr (580 ns) reduce gate drive losses and minimize dead-time-induced conduction loss.
Motor Drive Inverters	LED Driver Ballasts
Use Scenario: Half-bridge upper-leg switch in 3-phase BLDC inverters for HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-side N-channel MOSFET switched via bootstrap gate driver; conducts 12 A peak phase current. Use Value: Robust body diode (Q_rr = 4.3 μC) sustains freewheeling current during PWM dead time without excessive heating.	Use Scenario: Buck-boost PFC stage and isolated LED driver primary switch in streetlight and high-bay luminaires. IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch regulating 400 V DC bus; switches at variable frequency up to 150 kHz. Use Value: 0.555 Ω R_DS(on) maintains <1.5 W conduction loss at full load, supporting >92 % system efficiency.

Industrial AC-DC Power Supplies

Server & Telecom SMPS

Use Scenario: Primary-side switching in 500–1000 W offline flyback and forward converters with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from primary to secondary winding; operates at 65–130 kHz.

Use Value: 500 V V_DS and 180 mJ E_AS ensure reliable operation during line surges and transformer leakage spike events.

Use Scenario: Main power switch in redundant 12 V/48 V intermediate bus converters for data center power shelves.

IC Role / Device Role / Timing Role: Synchronous rectifier driver companion in active clamp forward topology; handles 12 A continuous load current.

Use Value: Low Q_g (48 nC) and fast t_rr (580 ns) reduce gate drive losses and minimize dead-time-induced conduction loss.

Motor Drive Inverters

LED Driver Ballasts

Use Scenario: Half-bridge upper-leg switch in 3-phase BLDC inverters for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET switched via bootstrap gate driver; conducts 12 A peak phase current.

Use Value: Robust body diode (Q_rr = 4.3 μC) sustains freewheeling current during PWM dead time without excessive heating.

Use Scenario: Buck-boost PFC stage and isolated LED driver primary switch in streetlight and high-bay luminaires.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch regulating 400 V DC bus; switches at variable frequency up to 150 kHz.

Use Value: 0.555 Ω R_DS(on) maintains <1.5 W conduction loss at full load, supporting >92 % system efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	R_DS(on) = 0.58 Ω (max), Q_g = 52 nC, TO-220FP package, Zener-protected gate	Higher gate charge increases drive loss; Zener protection adds gate robustness but no avalanche rating	Preferred where gate overvoltage risk exceeds avalanche stress risk; not drop-in due to different thermal pad layout
IRFBC40APBF	R_DS(on) = 0.75 Ω (max), Q_g = 38 nC, TO-220AB package, no avalanche test spec	Lower Q_g improves switching speed but higher R_DS(on) raises conduction loss by ~35 % at 12 A	Acceptable for lower-power (<600 W) designs where thermal margin allows higher on-resistance

Compared with STP12NK50ZFP and IRFBC40APBF, SIHF12N50C-E3 delivers superior avalanche ruggedness (180 mJ) and lower thermal resistance (0.6 °C/W), making it optimal for high-reliability, high-power-density industrial power conversion where transient stress and thermal management are critical.

Availability

SIHF12N50C-E3 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server SMPS, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for SIHF12N50C-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and ruggedness.

The SIHF12N50C-E3 belongs to Vishay's high-voltage power MOSFET family engineered for demanding offline power conversion, featuring optimized R_DS(on) × Q_g trade-offs and validated avalanche capability for industrial-grade robustness.

FAQ

What is the maximum continuous drain current rating for SIHF12N50C-E3 at 100 °C case temperature?

The SIHF12N50C-E3 has a continuous drain current rating of 7.5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and ensures junction temperature remains within the –55 °C to +150 °C operating range. At T_C = 25 °C, the rating is 12 A.

Does SIHF12N50C-E3 have a specified gate threshold voltage range?

Yes, the SIHF12N50C-E3 has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity against spurious triggering in noisy industrial environments.

Is SIHF12N50C-E3 suitable for use in zero-voltage switching (ZVS) circuits?

Yes, SIHF12N50C-E3 is suitable for ZVS applications due to its well-characterized C_oss (165 pF typ) and low Q_gd/Q_g ratio (15/48 nC), which enable predictable resonant tank behavior. Its 500 V V_DS rating provides margin for ringing peaks in phase-shifted full-bridge topologies.

What is the body diode forward voltage of SIHF12N50C-E3 at 10 A and 25 °C?

The body diode forward voltage (V_SD) of SIHF12N50C-E3 is 1.8 V maximum at T_J = 25 °C, I_S = 10 A, and V_GS = 0 V. This value is critical for estimating freewheeling losses in half-bridge and synchronous rectifier configurations where the intrinsic diode conducts during dead time.

How does the TO-220 FULLPAK package of SIHF12N50C-E3 improve thermal performance versus standard TO-220AB?

The TO-220 FULLPAK package of SIHF12N50C-E3 achieves R_thJC = 0.6 °C/W - significantly lower than TO-220AB's 3.5 °C/W - by exposing the drain metallization on the underside for direct thermal interface with heatsinks. This reduces junction-to-heatsink thermal resistance by >80 %, enabling higher power density in space-constrained designs.

SIHF12N50C-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 555mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1375 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF12N50C-E3 FAQ

1.How can I place an order for SIHF12N50C-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF12N50C-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF12N50C-E3 reliable?

The price and inventory of SIHF12N50C-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF12N50C-E3 is usually 5 days.

3.What payment methods are accepted for SIHF12N50C-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF12N50C-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF12N50C-E3?

SIHF12N50C-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF12N50C-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF12N50C-E3?

For technical support, including SIHF12N50C-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF12N50C-E3 requirements.

6.How does Aetrix verify that SIHF12N50C-E3 is sourced from the original manufacturer or authorized distributors?

All SIHF12N50C-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF12N50C-E3 meets industry standards.

7.What is the process for return or replacement of SIHF12N50C-E3?

All SIHF12N50C-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF12N50C-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF12N50C-E3 part is unused and in its original packaging.

Return procedure for SIHF12N50C-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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