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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF12N60E-E3

Name: SIHF12N60E-E3
Brand: Vishay Siliconix
SKU: SIHF12N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF12N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF12N60E-E3.pdf

Description:: MOSFET N-CH 600V 12A TO220

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Product details

Overview

SIHF12N60E-E3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, optimized for high-efficiency switch-mode power supplies and PFC stages. It delivers R_DS(on) = 0.38 Ω (max) at V_GS = 10 V, Q_g = 58 nC (max), and avalanche-rated UIS capability of 117 mJ - enabling robust hard-switching in telecom and server power designs.

For engineers reviewing the SIHF12N60E-E3 datasheet, SIHF12N60E-E3 pinout, SIHF12N60E-E3 application, or SIHF12N60E-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced switching losses versus standard 600 V MOSFETs, and validated performance in 480 V DC bus PFC circuits with dV/dt immunity up to 70 V/ns.

Technical Context

This device employs planar vertical DMOS technology with optimized gate oxide and cell pitch to achieve balanced conduction and switching loss trade-offs. Its 600 V V_DS rating supports 400 V AC input rectified rails with margin, while the 150 °C maximum junction temperature enables operation in thermally constrained enclosures.

The integrated body diode exhibits t_rr = 350 ns and Q_rr = 4 μC at T_J = 25 °C, supporting ZVS-capable topologies. Thermal resistance R_thJC = 3.8 °C/W allows 33 W continuous dissipation with minimal heatsinking when mounted to a 25 °C case surface.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to ~565 V DC with 6% margin for line surges and ringing
R_DS(on) max @ 10 V	0.38 Ω - enables ≤ 27 W conduction loss at 9.5 A RMS in continuous conduction mode PFC
Q_g max	58 nC - reduces gate drive power and enables use of low-current drivers like UCC27531 in isolated gate circuits
E_AS	117 mJ - withstands unclamped inductive switching events without failure in flyback or LLC resonant converters
C_iss	937 pF - limits Miller-induced turn-on risk during high dV/dt transitions in bridge-leg configurations
T_J range	–55 to +150 °C - qualified for industrial and telecom base station environments with extended thermal cycling
R_thJC	3.8 °C/W - permits 33 W continuous power dissipation with ≤ 100 °C case temperature rise above ambient

Pinout & Package

SIHF12N60E-E3 uses the TO-220 FULLPAK package: insulated plastic housing with exposed copper drain pad on underside, 3-pin through-hole configuration, and lead (Pb)-free/halogen-free finish per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; requires <1.1 Ω series gate resistor to limit peak current and suppress oscillation
D (Drain)	High-side power output	Connected to primary-side high-voltage rail; electrically tied to exposed copper pad for thermal and electrical grounding
S (Source)	Reference node	Serves as return path for load current and gate drive reference; must be routed with low-inductance layout to minimize V_GS noise

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	22.0 Ω·nC - improves efficiency in 100–300 kHz SMPS by reducing combined conduction + switching loss
Avalanche energy rated (UIS)	117 mJ single-pulse - eliminates need for external snubbers in hard-switched forward or flyback converters
Ultra-low gate charge (Q_g)	58 nC max - lowers gate driver power consumption and enables faster switching transitions
Reduced C_iss and C_oss	C_iss = 937 pF, C_oss = 53 pF - minimizes capacitive coupling and EMI generation during high-speed switching
Body diode with controlled Q_rr	Q_rr = 4 μC - reduces reverse recovery loss and associated voltage spikes in synchronous rectification or half-bridge freewheeling

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 1 kW 48 V output telecom rectifier with active PFC front-end. IC Role / Device Role / Timing Role: High-side switch in boost PFC stage operating at 100 kHz with 480 V DC bus. Use Value: Low Q_g and R_DS(on) reduce total losses by 1.2 W vs. legacy 600 V MOSFETs, improving system efficiency from 94.1% to 94.7% at full load.	Use Scenario: Main switch in isolated LLC resonant DC/DC converter for 48 V distribution in central office equipment. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge LLC primary, handling 600 V transient spikes during zero-voltage switching transitions. Use Value: 70 V/ns dV/dt rating prevents false turn-on during fast voltage transients, eliminating need for negative gate bias or active Miller clamp.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC link switching in string-level 3 kW solar inverter with unipolar PWM modulation. IC Role / Device Role / Timing Role: High-side IGBT replacement in three-level NPC topology operating at 16 kHz. Use Value: Avalanche rating and 150 °C T_J allow reliable operation under partial shading-induced overvoltage stress without derating.	Use Scenario: Output stage switch in 7.5 kW variable-frequency drive for HVAC compressors. IC Role / Device Role / Timing Role: Inverter leg switch controlling motor phase current with 10 kHz PWM and regenerative braking. Use Value: Body diode t_rr = 350 ns ensures clean commutation during regeneration, reducing voltage overshoot and snubber losses by 35%.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 1 kW 48 V output telecom rectifier with active PFC front-end.

IC Role / Device Role / Timing Role: High-side switch in boost PFC stage operating at 100 kHz with 480 V DC bus.

Use Value: Low Q_g and R_DS(on) reduce total losses by 1.2 W vs. legacy 600 V MOSFETs, improving system efficiency from 94.1% to 94.7% at full load.

Use Scenario: Main switch in isolated LLC resonant DC/DC converter for 48 V distribution in central office equipment.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge LLC primary, handling 600 V transient spikes during zero-voltage switching transitions.

Use Value: 70 V/ns dV/dt rating prevents false turn-on during fast voltage transients, eliminating need for negative gate bias or active Miller clamp.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC link switching in string-level 3 kW solar inverter with unipolar PWM modulation.

IC Role / Device Role / Timing Role: High-side IGBT replacement in three-level NPC topology operating at 16 kHz.

Use Value: Avalanche rating and 150 °C T_J allow reliable operation under partial shading-induced overvoltage stress without derating.

Use Scenario: Output stage switch in 7.5 kW variable-frequency drive for HVAC compressors.

IC Role / Device Role / Timing Role: Inverter leg switch controlling motor phase current with 10 kHz PWM and regenerative braking.

Use Value: Body diode t_rr = 350 ns ensures clean commutation during regeneration, reducing voltage overshoot and snubber losses by 35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NM60ND	R_DS(on) = 0.35 Ω (typ), Q_g = 45 nC (typ), TO-220 package without FULLPAK insulation	Lacks insulated drain pad; requires separate isolation hardware for heatsink mounting	Prefer when cost sensitivity outweighs thermal integration needs and PCB layout allows discrete isolation
IXTH12N60L2	R_DS(on) = 0.36 Ω (max), Q_g = 52 nC (max), TO-247 package with higher R_thJC = 0.65 °C/W	Higher thermal resistance demands larger heatsink; superior SOA for linear-mode operation	Prefer for high-reliability linear-regulator or soft-start applications where safe operating area exceeds SIHF12N60E-E3

Compared with STP12NM60ND and IXTH12N60L2, SIHF12N60E-E3 offers integrated thermal-electrical isolation via TO-220 FULLPAK, lower gate drive loss than IXTH12N60L2, and tighter R_DS(on) distribution than STP12NM60ND - making it optimal for space-constrained, high-volume telecom and server power modules.

Availability

SIHF12N60E-E3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHF12N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.

The E Series Power MOSFETs, including SIHF12N60E-E3, were designed specifically for high-efficiency, high-voltage switch-mode power conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for SIHF12N60E-E3 at 100 °C case temperature?

The SIHF12N60E-E3 has a continuous drain current rating of 7.8 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat transfer at elevated case temperatures and must be applied when designing heatsink solutions for sustained high-power operation. The SIHF12N60E-E3 maintains safe operation within its 150 °C maximum junction temperature limit under these conditions.

Does SIHF12N60E-E3 support logic-level gate drive?

No, SIHF12N60E-E3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, but full enhancement requires V_GS = 10 V to achieve the specified R_DS(on) of 0.38 Ω. Driving SIHF12N60E-E3 with only 5 V results in significantly higher on-resistance and unacceptable conduction losses. The SIHF12N60E-E3 must be used with a 10 V gate driver or level-shifted control signal.

What is the avalanche energy rating of SIHF12N60E-E3 and how is it tested?

The SIHF12N60E-E3 is rated for 117 mJ single-pulse unclamped inductive switching (UIS) energy, tested per JEDEC standard with V_DD = 50 V, L = 11.6 mH, R_g = 25 Ω, and I_AS = 4.5 A at T_J = 25 °C. This rating confirms ruggedness against transient overvoltage events in hard-switched topologies. The SIHF12N60E-E3 is not rated for repetitive avalanche operation unless explicitly validated in the target circuit.

Can SIHF12N60E-E3 be used in place of a TO-220AB MOSFET without layout changes?

No - SIHF12N60E-E3 uses the TO-220 FULLPAK package, which features an insulated drain pad on the underside and different mechanical dimensions than standard TO-220AB. Mounting requires direct thermal interface to heatsink without electrical isolation hardware, and PCB footprint differs in lead spacing and body outline. Replacing a TO-220AB part with SIHF12N60E-E3 requires board revision to accommodate the FULLPAK's unique pin alignment and thermal pad clearance.

What is the typical reverse recovery time of the body diode in SIHF12N60E-E3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHF12N60E-E3 is 350 ns, measured at T_J = 25 °C, I_F = 6 A, dI/dt = 100 A/μs, and V_R = 25 V. This parameter is critical for evaluating commutation behavior in half-bridge and synchronous rectifier applications. The SIHF12N60E-E3's t_rr is optimized to minimize recovery loss while maintaining robustness under high dI/dt conditions.

SIHF12N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 937 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF12N60E-E3 FAQ

1.How can I place an order for SIHF12N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF12N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF12N60E-E3 reliable?

The price and inventory of SIHF12N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF12N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHF12N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF12N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF12N60E-E3?

SIHF12N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF12N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF12N60E-E3?

For technical support, including SIHF12N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF12N60E-E3 requirements.

6.How does Aetrix verify that SIHF12N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHF12N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF12N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHF12N60E-E3?

All SIHF12N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF12N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF12N60E-E3 part is unused and in its original packaging.

Return procedure for SIHF12N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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