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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF12N60E-GE3

Name: SIHF12N60E-GE3
Brand: Vishay Siliconix
SKU: SIHF12N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF12N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF12N60E-GE3.pdf

Description:: MOSFET N-CH 600V 12A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF12N60E-GE3 from Vishay Siliconix is a 600 V, 12 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.38 Ω (max) at V_GS = 10 V, Q_g = 58 nC (max), and avalanche-rated (E_AS = 117 mJ). It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and solar inverter DC-DC converters.

For engineers reviewing the SIHF12N60E-GE3 datasheet, SIHF12N60E-GE3 pinout, SIHF12N60E-GE3 application, or SIHF12N60E-GE3 equivalent, this device is selected for high-efficiency, medium-power hard-switched topologies where low gate charge, robust UIS capability, and thermal reliability under repetitive stress are critical design requirements.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage operation with controlled dV/dt immunity (70 V/ns at T_J = 125 °C) and integrated body diode rated for 12 A continuous source current. Its low C_iss (937 pF typ.) and ultra-low Q_gd/Q_g ratio (13/58 nC) support fast, low-loss switching in 50–100 kHz power stages.

The device operates with V_GS(th) = 2–4 V, enabling standard 10 V gate drive compatibility while maintaining tight leakage control (I_DSS ≤ 1 μA at 600 V, 25 °C). Thermal resistance R_thJC = 3.8 °C/W enables stable 33 W power dissipation at T_C = 25 °C without forced cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V AC input rectified to ~560 V DC bus with 10 % margin for transients in telecom/server PSUs.
R_DS(on) max	0.38 Ω at V_GS = 10 V - Limits conduction loss to ≤ 54.7 W at 12 A, enabling compact heatsink design in 300–500 W systems.
Q_g max	58 nC - Enables efficient gate driving with <1 W driver power at 100 kHz, reducing gate driver IC selection constraints.
E_AS	117 mJ - Withstands unclamped inductive switching events in PFC boost chokes without failure, improving system ruggedness.
T_J range	−55 to +150 °C - Qualified for industrial and telecom environments with extended thermal cycling and high ambient operation.
C_iss	937 pF typ. - Reduces Miller-induced turn-on risk and eases EMI filter sizing in high-frequency SMPS designs.
I_D cont.	12 A at T_C = 25 °C - Sustains full load in single-phase PFC or LLC half-bridge primary switches up to 600 W.

Pinout & Package

TO-220 FULLPAK package: insulated tab, vertical leadframe, copper-exposed drain pad on underside for direct heatsink mounting. Dimensions per Vishay Doc #91359: D = 15.87 mm (nom.), E = 10.10 mm (nom.), L = 13.10 mm (nom.).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; low Q_gs (6 nC) enables rapid voltage transition and reduced Miller plateau duration.
D (Drain)	High-voltage power terminal	Connected to DC bus or transformer primary; electrically tied to exposed copper pad for low-inductance, low-thermal-resistance heatsinking.
S (Source)	Power return and reference node	Serves as local ground for gate driver; low-inductance layout essential to minimize V_GS ringing during fast switching.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	22.0 Ω·nC max - Balances conduction and switching losses better than legacy 600 V MOSFETs, improving full-load efficiency by ≥0.5 %.
Avalanche energy rating	117 mJ single-pulse - Eliminates need for external snubbers in boost PFC circuits subjected to line surges or load dumps.
Ultra-low Q_gd	13 nC - Minimizes Miller effect, enabling stable operation at high dV/dt (70 V/ns) without spurious turn-on in noisy industrial environments.
Low C_iss	937 pF - Reduces gate drive power and improves EMI performance in 65–100 kHz SMPS, easing compliance with CISPR-32 Class B limits.
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Material Declaration #99912 - Suitable for export-controlled and green-certified end equipment.

Applications

Server Power Supply	Photovoltaic Inverter
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 400–600 W to 12 V/48 V intermediate bus. IC Role / Device Role / Timing Role: High-voltage power switch handling 560 V DC bus, operating at 75–150 kHz with zero-voltage switching (ZVS) assist. Use Value: Low Q_g and R_DS(on) reduce total losses by 1.2 W vs. comparable 600 V MOSFETs, increasing 230 V AC efficiency from 93.8 % to 94.3 % at full load.	Use Scenario: DC-DC boost stage in string-level PV microinverters converting 30–60 V PV input to 400 V DC link. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged switch managing 10–15 A peak currents with 100 kHz PWM control. Use Value: 117 mJ E_AS withstands lightning-induced transients on rooftop arrays, eliminating field failures in IEC 61000-4-5 Level 4 surge testing.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Inverter leg switch in 0.75 kW sensorless vector drive powering HVAC blowers or pumps. IC Role / Device Role / Timing Role: Half-bridge high-side switch operating with 120 °C case temperature, driven by isolated gate driver. Use Value: R_thJC = 3.8 °C/W allows 12 A continuous current at T_C = 100 °C without derating, supporting compact IP54-rated enclosures.	Use Scenario: Resonant switch in electronic ballasts for T5/T8 fluorescent lamps, operating in soft-start and dimming modes. IC Role / Device Role / Timing Role: Hard-switched power transistor controlling lamp ignition and regulation at 25–60 kHz. Use Value: Low C_oss (53 pF) and fast trr (350 ns) ensure clean zero-current switching transitions, reducing audible noise and lamp flicker.

Server Power Supply

Photovoltaic Inverter

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 400–600 W to 12 V/48 V intermediate bus.

IC Role / Device Role / Timing Role: High-voltage power switch handling 560 V DC bus, operating at 75–150 kHz with zero-voltage switching (ZVS) assist.

Use Value: Low Q_g and R_DS(on) reduce total losses by 1.2 W vs. comparable 600 V MOSFETs, increasing 230 V AC efficiency from 93.8 % to 94.3 % at full load.

Use Scenario: DC-DC boost stage in string-level PV microinverters converting 30–60 V PV input to 400 V DC link.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged switch managing 10–15 A peak currents with 100 kHz PWM control.

Use Value: 117 mJ E_AS withstands lightning-induced transients on rooftop arrays, eliminating field failures in IEC 61000-4-5 Level 4 surge testing.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Inverter leg switch in 0.75 kW sensorless vector drive powering HVAC blowers or pumps.

IC Role / Device Role / Timing Role: Half-bridge high-side switch operating with 120 °C case temperature, driven by isolated gate driver.

Use Value: R_thJC = 3.8 °C/W allows 12 A continuous current at T_C = 100 °C without derating, supporting compact IP54-rated enclosures.

Use Scenario: Resonant switch in electronic ballasts for T5/T8 fluorescent lamps, operating in soft-start and dimming modes.

IC Role / Device Role / Timing Role: Hard-switched power transistor controlling lamp ignition and regulation at 25–60 kHz.

Use Value: Low C_oss (53 pF) and fast trr (350 ns) ensure clean zero-current switching transitions, reducing audible noise and lamp flicker.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60ZFP	R_DS(on) = 0.45 Ω (max), Q_g = 45 nC, TO-220FP package with non-insulated tab.	Lacks full avalanche rating (no E_AS spec); requires insulating washer for heatsink mounting.	Preferred where lower gate charge outweighs need for ruggedness and insulation; verify mechanical clearance for tab isolation.
IXTH12N60L2	R_DS(on) = 0.35 Ω (max), Q_g = 62 nC, TO-247AC package with higher R_thJC (1.0 °C/W).	Higher peak current rating (16 A) but larger footprint and cost; no halogen-free option in standard grade.	Chosen when higher current headroom and superior thermal performance justify PCB area and sourcing complexity.

Compared with STP12NK60ZFP and IXTH12N60L2, SIHF12N60E-GE3 delivers optimal balance of avalanche ruggedness, thermal interface simplicity (insulated TO-220 FULLPAK), and RoHS compliance-making it preferred for cost-sensitive, space-constrained industrial and telecom power supplies requiring long-term reliability without design compromises.

Availability

SIHF12N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHF12N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFETs-including SIHF12N60E-GE3-are engineered for high-efficiency, high-voltage switching in telecom, server, and renewable energy systems where low FOM and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current rating for SIHF12N60E-GE3 at 100 °C case temperature?

The SIHF12N60E-GE3 supports 7.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and ensures safe operation within its 33 W maximum power dissipation limit when mounted on a heatsink with adequate thermal interface.

Does SIHF12N60E-GE3 have an insulated package, and why does that matter?

Yes, SIHF12N60E-GE3 uses the TO-220 FULLPAK package with an electrically insulated drain tab. This eliminates the need for isolating washers or pads when mounting directly to a grounded heatsink-reducing thermal resistance, assembly cost, and risk of short circuits in high-density power modules.

What is the typical reverse recovery time (t_rr) of the body diode in SIHF12N60E-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHF12N60E-GE3 is 350 ns, measured at T_J = 25 °C, I_F = 6 A, dI/dt = 100 A/μs, and V_R = 25 V. This fast recovery supports efficient synchronous rectification and reduces switching losses in quasi-resonant topologies.

How does the gate threshold voltage (V_GS(th)) of SIHF12N60E-GE3 affect drive circuit design?

The SIHF12N60E-GE3 has a V_GS(th) range of 2–4 V, confirming compatibility with standard 10 V gate drivers. Its relatively narrow threshold window minimizes risk of partial turn-on during noise transients, and the 0.32 Ω typical R_DS(on) at 6 A ensures strong saturation even with moderate gate overdrive-simplifying driver selection and layout.

Is SIHF12N60E-GE3 suitable for use in power factor correction (PFC) boost circuits?

Yes, SIHF12N60E-GE3 is explicitly listed in Vishay's Applications section for Power Factor Correction power supplies. Its 600 V V_DS, 117 mJ E_AS, and low Q_g/C_iss make it well-suited for continuous conduction mode (CCM) boost PFC stages operating up to 3 kW, where ruggedness against line surges and efficiency at light-to-full load are critical.

SIHF12N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 937 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF12N60E-GE3 FAQ

1.How can I place an order for SIHF12N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF12N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF12N60E-GE3 reliable?

The price and inventory of SIHF12N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF12N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF12N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF12N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF12N60E-GE3?

SIHF12N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF12N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF12N60E-GE3?

For technical support, including SIHF12N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF12N60E-GE3 requirements.

6.How does Aetrix verify that SIHF12N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF12N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF12N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF12N60E-GE3?

All SIHF12N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF12N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF12N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHF12N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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