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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF12N65E-GE3

Name: SIHF12N65E-GE3
Brand: Vishay Siliconix
SKU: SIHF12N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF12N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF12N65E-GE3.pdf

Description:: MOSFET N-CH 650V 12A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF12N65E-GE3 from Vishay Siliconix is a 650 V, 12 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, optimized for high-voltage switching in offline SMPS and PFC stages. It delivers R_DS(on) = 0.38 Ω at V_GS = 10 V, Q_g = 70 nC max, and avalanche-rated (E_AS = 226 mJ), enabling efficient hard-switched and resonant topologies in telecom rectifiers and solar inverters.

For engineers reviewing the SIHF12N65E-GE3 datasheet, SIHF12N65E-GE3 pinout, SIHF12N65E-GE3 application, or SIHF12N65E-GE3 equivalent, key selection criteria include its 650 V V_DS rating, low gate charge for reduced drive loss, robust body diode (t_rr = 618 ns max), and TO-220 FULLPAK thermal performance (R_thJC = 3.8 °C/W).

Technical Context

This MOSFET employs planar high-voltage silicon technology with optimized cell pitch and gate oxide design to achieve low R_DS(on) × Q_g figure-of-merit (FOM) of ~26.6 Ω·nC. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The device integrates an ultra-low Q_gd/Q_g ratio (16/70 ≈ 23%) and low C_iss (1224 pF typ.) to minimize Miller-induced switching instability. Its rated dV/dt capability (37 V/ns at T_J = 125 °C) supports operation in fast-switching bridge legs without external snubbing in well-designed layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	650 V - supports 400 V DC bus designs with ≥30 % margin for line surges and ringing in AC-DC front-ends.
R_DS(on) max	0.38 Ω @ V_GS = 10 V - enables ≤4.5 W conduction loss at 12 A continuous drain current (T_C = 25 °C).
Q_g max	70 nC - reduces gate drive power and allows use of low-cost 1-A peak gate drivers in 100–300 kHz PFC controllers.
E_AS	226 mJ - withstands unclamped inductive switching events in motor drives and welding inverters without failure.
t_rr max	618 ns - limits reverse recovery losses during hard commutation in LLC and phase-shifted full-bridge topologies.
R_thJC	3.8 °C/W - enables 33 W dissipation with ≤128 °C junction rise above case, supporting compact heatsink designs.
V_GS(th)	2–4 V - ensures clean turn-on with industry-standard PWM ICs (e.g., UCC28070, ICE2PCS01) without requiring level-shifting.

Pinout & Package

TO-220 FULLPAK package with isolated drain tab (exposed copper on backside), 3-pin through-hole mounting, and lead (Pb)-free/halogen-free finish per JEDEC J-STD-020. Thermal pad electrically connected to drain (D).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; requires <100 Ω series resistance to damp oscillation and limit peak I_G during fast edge transitions.
D (Drain)	High-side power terminal	Connected to HV DC bus or transformer primary; electrically tied to exposed metal tab-must be insulated from heatsink unless referenced to same potential.
S (Source)	Power return / reference node	Serves as local ground for gate driver; layout must minimize inductance to prevent V_GS undershoot during turn-off.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	~26.6 Ω·nC - directly improves efficiency in both conduction and switching domains for 65–300 kHz applications.
Avalanche energy rating	226 mJ single-pulse - eliminates need for external clamping in cost-sensitive industrial power supplies where transient overloads occur.
Ultra-low Q_gd	16 nC - suppresses Miller plateau duration, enabling faster, more predictable turn-off and reducing risk of shoot-through in half-bridge configurations.
Body diode t_rr	309–618 ns - balances reverse recovery speed and peak I_RRM (21 A) to minimize EMI and diode loss in bidirectional switch applications.
High dV/dt immunity	37 V/ns at 125 °C - sustains stable operation in high dv/dt environments like SiC-based hybrid inverters without false triggering.

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 80+ Platinum-certified 1–3 kW telecom rectifiers with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, switching at 100–200 kHz with synchronous rectification on secondary side. Use Value: Low Q_g and R_DS(on) reduce total losses by ~1.2 W vs. legacy 600 V MOSFETs, improving system efficiency from 94.2 % to 94.8 % at full load.	Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to 230 V AC grid. IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge leg, operating in hard-switched mode with 50 kHz PWM and 500 V bus voltage. Use Value: Avalanche rating allows safe operation during grid fault transients; R_thJC = 3.8 °C/W enables direct-mount heatsinking without thermal interface pads.
Industrial Motor Drive	Fluorescent Ballast Lighting
Use Scenario: Inverter output stage for 0.75–2.2 kW variable-frequency drives powering HVAC compressors and pumps. IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter, conducting up to 12 A RMS with 10 kHz carrier frequency. Use Value: Body diode t_rr and Q_rr values minimize commutation loss during regenerative braking, reducing heatsink size by 18 %.	Use Scenario: Resonant half-bridge switch in electronic ballasts driving 40–125 W fluorescent lamps at 25–50 kHz. IC Role / Device Role / Timing Role: Fast-switching power transistor controlling lamp ignition and steady-state current via ZVS operation. Use Value: Low C_iss (1224 pF) and high dV/dt immunity ensure reliable zero-voltage switching across lamp aging and temperature drift.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 80+ Platinum-certified 1–3 kW telecom rectifiers with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input, switching at 100–200 kHz with synchronous rectification on secondary side.

Use Value: Low Q_g and R_DS(on) reduce total losses by ~1.2 W vs. legacy 600 V MOSFETs, improving system efficiency from 94.2 % to 94.8 % at full load.

Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to 230 V AC grid.

IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge leg, operating in hard-switched mode with 50 kHz PWM and 500 V bus voltage.

Use Value: Avalanche rating allows safe operation during grid fault transients; R_thJC = 3.8 °C/W enables direct-mount heatsinking without thermal interface pads.

Industrial Motor Drive

Fluorescent Ballast Lighting

Use Scenario: Inverter output stage for 0.75–2.2 kW variable-frequency drives powering HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter, conducting up to 12 A RMS with 10 kHz carrier frequency.

Use Value: Body diode t_rr and Q_rr values minimize commutation loss during regenerative braking, reducing heatsink size by 18 %.

Use Scenario: Resonant half-bridge switch in electronic ballasts driving 40–125 W fluorescent lamps at 25–50 kHz.

IC Role / Device Role / Timing Role: Fast-switching power transistor controlling lamp ignition and steady-state current via ZVS operation.

Use Value: Low C_iss (1224 pF) and high dV/dt immunity ensure reliable zero-voltage switching across lamp aging and temperature drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N65M2	R_DS(on) = 0.32 Ω (lower), Q_g = 45 nC (lower), but no UIS rating specified in datasheet.	Lacks avalanche energy specification - unsuitable for unclamped inductive loads like welders or PFC chokes with poor saturation margin.	Prefer STP12N65M2 only in tightly controlled, soft-switched topologies where overvoltage transients are fully clamped.
IXTH12N65X2	R_DS(on) = 0.35 Ω, Q_g = 42 nC, includes 100% UIS tested, but TO-247 package increases layout area and thermal resistance (R_thJC = 1.0 °C/W).	TO-247 footprint requires PCB redesign; superior thermal performance only beneficial with forced-air cooling above 50 W dissipation.	Select IXTH12N65X2 when >50 W continuous power dissipation demands lower R_thJC, accepting larger board area and higher cost.

Compared with STP12N65M2 and IXTH12N65X2, SIHF12N65E-GE3 offers balanced trade-offs: verified avalanche ruggedness for industrial reliability, TO-220 FULLPAK compatibility with legacy layouts, and sufficient FOM for cost-sensitive 1–3 kW power supplies without over-engineering thermal or switching performance.

Availability

SIHF12N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHF12N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The E Series Power MOSFETs-including SIHF12N65E-GE3-are engineered for high-efficiency, high-voltage switching in offline AC-DC converters, PFC circuits, and industrial inverters where ruggedness and consistent parametric performance are critical.

FAQ

What is the maximum continuous drain current rating for SIHF12N65E-GE3 at 100 °C case temperature?

The SIHF12N65E-GE3 supports 8 A continuous drain current at T_C = 100 °C, derating linearly at 0.26 W/°C above that point. This rating reflects thermal limits under real-world heatsink conditions-not ambient temperature-and assumes proper mounting torque (0.6 Nm for M3 screw) and thermal interface material. The SIHF12N65E-GE3 datasheet specifies this value in the Absolute Maximum Ratings table on page 1.

Does SIHF12N65E-GE3 have avalanche capability, and how is it validated?

Yes, SIHF12N65E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 226 mJ, tested per JEDEC JESD24-1 with V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4 A. This rating is guaranteed and 100% production-tested per Vishay's internal qualification standards. The SIHF12N65E-GE3 datasheet confirms this in the Absolute Maximum Ratings section and Product Summary table.

What is the gate threshold voltage range for SIHF12N65E-GE3, and why does it matter for drive circuit design?

The SIHF12N65E-GE3 has a V_GS(th) range of 2–4 V at I_D = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while avoiding spurious conduction from noise. This window allows compatibility with both legacy 12 V and modern 10 V controllers (e.g., UC384x, NCP1654) without external level shifting. The SIHF12N65E-GE3 specifications confirm this in the Static Characteristics table on page 2.

How does the body diode performance of SIHF12N65E-GE3 compare to standard FRDs in PFC applications?

The SIHF12N65E-GE3 body diode exhibits t_rr = 309–618 ns and Q_rr = 3.8–7.6 μC, which is slower than dedicated fast recovery diodes but sufficient for critical-conduction-mode (CRM) PFC where diode conduction is brief and non-repetitive. Its V_SD = 1.0–1.2 V at 6 A provides predictable forward drop without thermal runaway. These values are measured per JEDEC JESD24-1 and documented in the SIHF12N65E-GE3 datasheet on page 2.

Is SIHF12N65E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHF12N65E-GE3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak soldering temperature up to 300 °C for 10 seconds. Its TO-220 FULLPAK package uses matte tin plating and meets Vishay's Pb-free/halogen-free compliance per document 99912. The SIHF12N65E-GE3 packaging specification (document 91359) confirms this on page 1.

SIHF12N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1224 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF12N65E-GE3 FAQ

1.How can I place an order for SIHF12N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF12N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF12N65E-GE3 reliable?

The price and inventory of SIHF12N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF12N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF12N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF12N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF12N65E-GE3?

SIHF12N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF12N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF12N65E-GE3?

For technical support, including SIHF12N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF12N65E-GE3 requirements.

6.How does Aetrix verify that SIHF12N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF12N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF12N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF12N65E-GE3?

All SIHF12N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF12N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF12N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHF12N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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