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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF15N60E-E3

Name: SIHF15N60E-E3
Brand: Vishay Siliconix
SKU: SIHF15N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF15N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF15N60E-E3.pdf

Description:: MOSFET N-CH 600V 15A TO220

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Product details

Overview

SIHF15N60E-E3 from Vishay Siliconix is a 600 V, 15 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, optimized for high-voltage switching in SMPS and PFC stages. It features R_DS(on) = 0.28 Ω (max) at V_GS = 10 V, Q_g = 78 nC (max), and avalanche-rated UIS capability up to 102 mJ - enabling robust operation in server power supplies and solar inverters.

For engineers reviewing the SIHF15N60E-E3 datasheet, SIHF15N60E-E3 pinout, SIHF15N60E-E3 application, or SIHF15N60E-E3 equivalent, key selection criteria include its 600 V blocking voltage, low gate charge for reduced switching loss, TO-220 FULLPAK thermal performance (R_thJC = 3.7 °C/W), and body diode recovery characteristics (t_rr = 604 ns max) critical for hard-switched topologies.

Technical Context

This MOSFET employs planar vertical DMOS technology with optimized cell layout to achieve low R_DS(on) × Q_g figure-of-merit (FOM). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The device integrates an intrinsic fast-recovery body diode (Q_rr = 8 μC max, t_rr = 604 ns max) and is rated for unclamped inductive switching (UIS) up to 102 mJ at T_J = 25 °C - supporting rugged operation in flyback, LLC resonant, and boost PFC circuits without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports primary-side switching in 400 V DC bus systems (e.g., telecom rectifiers, PV inverters) with 20 % margin.
R_DS(on) max @ 10 V	0.28 Ω - limits conduction loss to ≤ 2.5 W at 9.6 A continuous drain current (T_C = 100 °C).
Q_g max	78 nC - enables efficient 100 kHz+ switching with moderate gate driver strength (e.g., 1 A peak drive).
E_AS	102 mJ - withstands single-pulse inductive energy in hard-switched converters without failure.
t_rr max	604 ns - reduces diode reverse recovery loss and EMI in discontinuous conduction mode (DCM) PFC.
R_thJC	3.7 °C/W - allows 34 W power dissipation with ≤ 125 °C junction rise above 25 °C case temperature.
I_D cont @ T_C = 100 °C	9.6 A - defines usable current in thermally constrained enclosures (e.g., sealed server PSUs).

Pinout & Package

TO-220 FULLPAK package with isolated drain tab (exposed copper on backside), offering improved thermal resistance vs. standard TO-220 and enhanced creepage/clearance for high-voltage isolation.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; threshold 2–4 V ensures clean turn-on with minimal Miller-induced shoot-through risk.
D (Drain)	High-side power terminal	Connected to exposed copper tab - must be electrically isolated from heatsink unless using insulating pad; handles full 600 V blocking.
S (Source)	Power return / reference node	Common return for gate drive and load current; low-inductance layout critical to minimize V_GS ringing during switching.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	≤ 21.8 Ω·nC - directly reduces total switching + conduction loss in high-frequency SMPS designs.
Avalanche energy rating (UIS)	102 mJ - eliminates need for external clamping in inductive load switching, simplifying protection circuitry.
Body diode Q_rr	8 μC max - lowers reverse recovery loss and associated EMI in boost PFC and flyback converters.
Drain-source dV/dt immunity	70 V/ns - suppresses false turn-on in high-dV/dt environments (e.g., half-bridge leg commutation).
Lead (Pb)-free & Halogen-free option	SiHF15N60E-GE3 variant available - meets RoHS/REACH requirements for green electronics manufacturing.

Applications

Server Power Supplies	Solar PV Inverters
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter for 48 V–12 V intermediate bus conversion. IC Role / Device Role / Timing Role: High-voltage power switch handling 380–400 V DC input, operating at 100–300 kHz with zero-voltage switching (ZVS) assist. Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, improving efficiency >94 % at full load while maintaining thermal headroom.	Use Scenario: Boost stage switch in string-level PV inverter DC-DC stage converting 200–1000 V DC to 600–800 V DC bus. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch controlling inductor current in continuous conduction mode (CCM) boost topology. Use Value: 600 V rating with 20 % margin and avalanche rating ensure reliability under lightning surge and panel open-circuit transients.
Telecom Rectifiers	Industrial Motor Drives
Use Scenario: Primary switch in phase-shifted full-bridge (PSFB) rectifier for -48 V telecom systems with 380 V AC input. IC Role / Device Role / Timing Role: High-side switch in bridge leg subjected to high dV/dt and repetitive UIS stress during ZVS transitions. Use Value: 70 V/ns dV/dt immunity and 102 mJ UIS rating prevent spurious turn-on and catastrophic failure during transient events.	Use Scenario: Brake chopper switch in 3-phase VFD regenerative braking circuit dissipating motor kinetic energy into DC bus resistor. IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated only during overvoltage conditions on DC link. Use Value: Robust SOA (Safe Operating Area) up to 15 A at 400 V and 1 ms pulse width enables reliable energy absorption without derating.

Server Power Supplies

Solar PV Inverters

Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter for 48 V–12 V intermediate bus conversion.

IC Role / Device Role / Timing Role: High-voltage power switch handling 380–400 V DC input, operating at 100–300 kHz with zero-voltage switching (ZVS) assist.

Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, improving efficiency >94 % at full load while maintaining thermal headroom.

Use Scenario: Boost stage switch in string-level PV inverter DC-DC stage converting 200–1000 V DC to 600–800 V DC bus.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch controlling inductor current in continuous conduction mode (CCM) boost topology.

Use Value: 600 V rating with 20 % margin and avalanche rating ensure reliability under lightning surge and panel open-circuit transients.

Telecom Rectifiers

Industrial Motor Drives

Use Scenario: Primary switch in phase-shifted full-bridge (PSFB) rectifier for -48 V telecom systems with 380 V AC input.

IC Role / Device Role / Timing Role: High-side switch in bridge leg subjected to high dV/dt and repetitive UIS stress during ZVS transitions.

Use Value: 70 V/ns dV/dt immunity and 102 mJ UIS rating prevent spurious turn-on and catastrophic failure during transient events.

Use Scenario: Brake chopper switch in 3-phase VFD regenerative braking circuit dissipating motor kinetic energy into DC bus resistor.

IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated only during overvoltage conditions on DC link.

Use Value: Robust SOA (Safe Operating Area) up to 15 A at 400 V and 1 ms pulse width enables reliable energy absorption without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NM60ND	R_DS(on) = 0.32 Ω (max), Q_g = 65 nC (max), TO-220FP package, no UIS rating specified	Lacks avalanche energy specification; requires external clamping in inductive switching	Prefer SIHF15N60E-E3 where unclamped inductive stress is present (e.g., PFC, flyback)
IXTH15N60L2	R_DS(on) = 0.27 Ω (max), Q_g = 85 nC (max), TO-247 package, higher R_thJC = 0.8 °C/W	Superior thermal performance but larger footprint; higher gate charge increases driver loss	Choose SIHF15N60E-E3 for cost-sensitive, space-constrained TO-220 designs with adequate heatsinking

Compared with STP15NM60ND and IXTH15N60L2, the SIHF15N60E-E3 delivers balanced trade-offs: lower gate charge than IXTH15N60L2 for driver efficiency, and certified UIS rating absent in STP15NM60ND - making it optimal for rugged, medium-power SMPS where reliability and board space both matter.

Availability

SIHF15N60E-E3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHF15N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHF15N60E-E3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage switching in energy-efficient power conversion systems - particularly targeting PFC, SMPS, and renewable energy interfaces where low loss and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current for SIHF15N60E-E3 at 100 °C case temperature?

The SIHF15N60E-E3 supports 9.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 15 A rating at 25 °C and assumes proper heatsinking to maintain case temperature within limit. Designers must verify junction temperature using R_thJC = 3.7 °C/W and actual power dissipation to ensure T_J ≤ 150 °C.

Does SIHF15N60E-E3 have avalanche energy rating, and how is it tested?

Yes, the SIHF15N60E-E3 is rated for single-pulse avalanche energy (E_AS) of 102 mJ under defined test conditions: V_DD = 50 V, starting T_J = 25 °C, L = 11.6 mH, R_g = 25 Ω, I_AS = 4.2 A. This rating confirms ruggedness against inductive switching stress without external clamping - a key differentiator versus non-rated MOSFETs. The test follows JEDEC JESD24-1 methodology.

What is the typical gate charge profile of SIHF15N60E-E3, and how does it affect driver selection?

The SIHF15N60E-E3 has Q_g = 39 nC (typical) and Q_gd = 17 nC (typical) at V_GS = 10 V, ID = 8 A, V_DS = 480 V. Its relatively low Q_gd/Q_g ratio (~44 %) reduces Miller plateau duration, enabling faster switching with modest gate drivers (e.g., 0.5–1 A peak). This minimizes driver power loss and simplifies layout versus higher-Q_g alternatives like IXTH15N60L2.

How does the body diode performance of SIHF15N60E-E3 compare to standard MOSFETs in PFC applications?

The SIHF15N60E-E3 features a tailored body diode with t_rr = 302–604 ns (max) and Q_rr = 4.0–8 μC (max) at T_J = 25 °C. Compared to generic 600 V MOSFETs, this faster recovery reduces reverse recovery loss and associated EMI in continuous conduction mode (CCM) boost PFC - directly improving system efficiency by 0.3–0.5 % and easing EMI filter design.

Is SIHF15N60E-E3 compatible with lead-free reflow soldering processes?

Yes, the SIHF15N60E-E3 is qualified for lead-free reflow per J-STD-020, with peak soldering temperature up to 300 °C for 10 seconds. Its TO-220 FULLPAK package uses matte tin plating and passes MSL Level 1 classification - allowing direct placement into standard Pb-free assembly lines without pre-baking or special handling.

SIHF15N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF15N60E-E3 FAQ

1.How can I place an order for SIHF15N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF15N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF15N60E-E3 reliable?

The price and inventory of SIHF15N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF15N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHF15N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF15N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF15N60E-E3?

SIHF15N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF15N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF15N60E-E3?

For technical support, including SIHF15N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF15N60E-E3 requirements.

6.How does Aetrix verify that SIHF15N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHF15N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF15N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHF15N60E-E3?

All SIHF15N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF15N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF15N60E-E3 part is unused and in its original packaging.

Return procedure for SIHF15N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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