Vishay Siliconix SIHF15N60E-GE3

Overview

SIHF15N60E-GE3 from Vishay Siliconix is a 600 V, 15 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, optimized for high-efficiency switch-mode power supplies and PFC stages. It delivers R_DS(on) = 0.28 Ω (max) at V_GS = 10 V, Q_g = 78 nC (max), and avalanche-rated UIS performance up to 102 mJ - enabling robust operation in telecom rectifiers and solar PV inverters.

For engineers reviewing the SIHF15N60E-GE3 datasheet, SIHF15N60E-GE3 pinout, SIHF15N60E-GE3 application, or SIHF15N60E-GE3 equivalent, key selection criteria include its 600 V blocking voltage, low gate charge for reduced switching loss, TO-220 FULLPAK thermal performance (R_thJC = 3.7 °C/W), and integrated body diode with t_rr = 604 ns (max) for hard-switched PFC designs.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized gate oxide and drift region doping to achieve low R_DS(on) × Q_g figure-of-merit (FOM). Its 600 V V_DS rating supports universal-input offline SMPS topologies operating up to 480 V DC bus, while the 15 A continuous drain current (T_C = 25 °C) enables use in 300–500 W power stages without paralleling.

The device features an avalanche-rated unclamped inductive switching (UIS) capability of 102 mJ and a dV/dt immunity of 70 V/ns, supporting reliable operation in noisy industrial environments. Its body diode exhibits Q_rr = 8 μC (max) and I_RRM = 24 A, making it suitable for synchronous rectification and bidirectional energy transfer in LLC resonant converters.

Key Specifications

Pinout & Package

TO-220 FULLPAK package with isolated drain tab (exposed copper on backside), 3-pin through-hole mounting, and 15.87 mm × 10.10 mm footprint. Thermal resistance R_thJC = 3.7 °C/W measured from junction to case (drain tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW15N60DM2 and IXFH15N60P, SIHF15N60E-GE3 offers the best balance of thermal performance (R_thJC = 3.7 °C/W), gate drive efficiency (Q_g = 78 nC), and cost-effective through-hole assembly - making it optimal for volume telecom and industrial power supplies where TO-220 FULLPAK mechanical robustness and repairability are prioritized.

Availability

SIHF15N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHF15N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHF15N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered for high-efficiency, high-voltage switching in demanding industrial and communications infrastructure - emphasizing ruggedness, low FOM, and avalanche survivability.

FAQ

What is the maximum continuous drain current for SIHF15N60E-GE3 at 100 °C case temperature?

The SIHF15N60E-GE3 supports 9.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-220 FULLPAK package and ensures junction temperature remains within the 150 °C limit under sustained load. The SIHF15N60E-GE3 must be mounted on an adequately sized heatsink to maintain this rating in real-world operation.

Does SIHF15N60E-GE3 have avalanche capability, and how is it rated?

Yes, SIHF15N60E-GE3 is fully avalanche-rated with a single-pulse unclamped inductive switching (UIS) energy rating of 102 mJ, tested per JEDEC JESD24-1. This rating applies at T_J = 25 °C with V_DD = 50 V, L = 11.6 mH, R_g = 25 Ω, and I_AS = 4.2 A. The SIHF15N60E-GE3 can safely absorb transient energy without failure, eliminating the need for external clamping in many industrial and telecom applications.

What is the gate threshold voltage range for SIHF15N60E-GE3, and how does it affect drive requirements?

The SIHF15N60E-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise. For full enhancement, the SIHF15N60E-GE3 requires V_GS ≥ 10 V to achieve its specified R_DS(on) of 0.28 Ω, making it incompatible with 5 V-only logic interfaces without level shifting.

How does the body diode performance of SIHF15N60E-GE3 compare to standard FRDs in PFC applications?

The SIHF15N60E-GE3 body diode has t_rr = 302–604 ns and Q_rr = 4.0–8.0 μC at T_J = 25 °C, which is slower than dedicated fast recovery diodes but sufficient for CrCM and transition-mode PFC where di/dt is controlled. Its V_SD = 1.0–1.2 V at I_S = 8 A provides lower forward loss than many discrete FRDs, but designers must account for its soft recovery to avoid voltage overshoot in hard-switched boost stages. The SIHF15N60E-GE3 body diode is not intended as a replacement for ultrafast diodes in critical high-dV/dt applications.

Is SIHF15N60E-GE3 compatible with lead-free reflow soldering processes?

Yes, SIHF15N60E-GE3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Soldering Recommendations section. The "-GE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU. The SIHF15N60E-GE3 meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount assembly, though its TO-220 FULLPAK form factor is primarily intended for through-hole mounting.