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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF15N65E-GE3

Name: SIHF15N65E-GE3
Brand: Vishay Siliconix
SKU: SIHF15N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF15N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF15N65E-GE3.pdf

Description:: MOSFET N-CH 650V 15A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF15N65E-GE3 from Vishay Siliconix is a 650 V, 15 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, optimized for high-voltage switching in server/telecom SMPS and PFC stages. It features R_DS(on) ≤ 0.28 Ω at V_GS = 10 V, Q_g = 48–96 nC, and avalanche-rated (E_AS = 286 mJ), enabling efficient hard-switched topologies.

For engineers reviewing the SIHF15N65E-GE3 datasheet, SIHF15N65E-GE3 pinout, SIHF15N65E-GE3 application, or SIHF15N65E-GE3 equivalent, key selection criteria include its 650 V V_DS, low gate charge for reduced drive loss, robust UIS capability, and thermal resistance of 3.7 °C/W (junction-to-case) - critical for high-power density designs.

Technical Context

This MOSFET employs planar high-voltage silicon technology with an integrated body diode rated for 15 A continuous source current and 325 ns reverse recovery time. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, ensuring reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The device is characterized for operation up to T_J = 150 °C, with R_DS(on) exhibiting +0.75 V/°C temperature coefficient and normalized on-resistance increasing ~2.5× from 25 °C to 150 °C. Dynamic parameters - C_iss = 1640 pF, C_oss = 80 pF, C_rss = 4 pF - support fast switching with controlled dV/dt (37 V/ns max at T_J = 125 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	650 V - supports 400 V AC input rectified systems with ≥30 % safety margin for surge and ringing
R_DS(on) Max @ 25 °C	0.28 Ω - enables <1.8 W conduction loss at 8 A DC, suitable for 300–500 W power stages
Q_g Max	96 nC - determines gate driver current requirement (~1 A peak for 100 ns rise time)
E_AS	286 mJ - allows unclamped inductive switching without failure under defined test conditions (L = 28.2 mH, I_AS = 4.5 A)
T_J Range	−55 to +150 °C - supports industrial and telecom environments with active thermal management
R_thJC	3.7 °C/W - enables 34 W dissipation with ≤125 °C case temperature rise above ambient
I_D Continuous @ 100 °C	10 A - defines usable current limit in thermally constrained enclosures without forced air

Pinout & Package

TO-220 FULLPAK package with isolated drain tab (exposed copper), 3-pin through-hole mounting, and Pb-free/halogen-free construction per JEDEC standards. Dimensions conform to Vishay drawing 91359 (Option 1 or 2), with mechanical tolerance stack-up validated for Cpk > 1.33.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance (C_iss = 1640 pF) sets Miller effect and switching speed
D (Drain)	High-side power terminal	Connected to primary HV rail; electrically tied to exposed tab - requires insulated mounting hardware
S (Source)	Reference and return path	Common node for gate drive return and current sensing; body diode anode is internally connected here

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	≤ 26.9 Ω·nC - reduces combined conduction and switching losses in high-frequency PFC and LLC converters
Avalanche energy rating (E_AS)	286 mJ - eliminates need for external snubbers in inductive load switching applications like motor drives
Ultra-low C_rss	4 pF - minimizes Miller feedback, improving dv/dt immunity and reducing risk of false turn-on during high-side switching
Body diode t_rr	325 ns - enables synchronous rectification replacement in low-frequency flyback or forward converters
High dV/dt ruggedness	37 V/ns at 125 °C - sustains rapid voltage transients in hard-switched bridge legs without latch-up

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1 kW server PSU using interleaved PFC + LLC topology. IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC stage, operating at 65–100 kHz with zero-voltage switching assistance. Use Value: Low Q_g and R_DS(on) reduce gate drive loss and conduction loss, directly improving full-load efficiency by ≥0.3 % vs. legacy 600 V MOSFETs.	Use Scenario: Output rectification and isolation switching in −48 V telecom rectifier modules with active OR-ing control. IC Role / Device Role / Timing Role: High-side switch in hot-swap and redundancy circuits, handling 15 A continuous load with fast fault response. Use Value: Avalanche rating ensures survivability during output short-circuit events without external clamping, simplifying protection circuitry.
Solar PV Inverter	Induction Heating
Use Scenario: DC-link switching in string inverters with 600–1000 V DC input, requiring high-reliability 650 V devices. IC Role / Device Role / Timing Role: Upper switch in three-phase inverter bridge, commutated at 16–20 kHz with sinusoidal PWM. Use Value: 150 °C max junction temperature and 3.7 °C/W R_thJC allow sustained operation at 85 °C ambient with natural convection cooling.	Use Scenario: Half-bridge resonant switch in 20–50 kW industrial induction heating generators. IC Role / Device Role / Timing Role: Hard-switched power switch operating at 20–100 kHz, subjected to high di/dt and repetitive avalanche stress. Use Value: 286 mJ E_AS and 38 A pulsed drain current enable reliable operation under transient overloads without derating.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1 kW server PSU using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC stage, operating at 65–100 kHz with zero-voltage switching assistance.

Use Value: Low Q_g and R_DS(on) reduce gate drive loss and conduction loss, directly improving full-load efficiency by ≥0.3 % vs. legacy 600 V MOSFETs.

Use Scenario: Output rectification and isolation switching in −48 V telecom rectifier modules with active OR-ing control.

IC Role / Device Role / Timing Role: High-side switch in hot-swap and redundancy circuits, handling 15 A continuous load with fast fault response.

Use Value: Avalanche rating ensures survivability during output short-circuit events without external clamping, simplifying protection circuitry.

Solar PV Inverter

Induction Heating

Use Scenario: DC-link switching in string inverters with 600–1000 V DC input, requiring high-reliability 650 V devices.

IC Role / Device Role / Timing Role: Upper switch in three-phase inverter bridge, commutated at 16–20 kHz with sinusoidal PWM.

Use Value: 150 °C max junction temperature and 3.7 °C/W R_thJC allow sustained operation at 85 °C ambient with natural convection cooling.

Use Scenario: Half-bridge resonant switch in 20–50 kW industrial induction heating generators.

IC Role / Device Role / Timing Role: Hard-switched power switch operating at 20–100 kHz, subjected to high di/dt and repetitive avalanche stress.

Use Value: 286 mJ E_AS and 38 A pulsed drain current enable reliable operation under transient overloads without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15N65M2	650 V, 15 A, R_DS(on) = 0.27 Ω, Q_g = 60 nC, TO-220FP package	Higher Q_g increases gate drive loss; lower C_oss (60 pF) improves light-load efficiency	Prefer when optimizing for lower switching loss at light loads, accepting higher gate drive burden
IXTH15N65X2	650 V, 15 A, R_DS(on) = 0.25 Ω, Q_g = 52 nC, TO-247 package	TO-247 offers superior thermal performance (R_thJC = 1.5 °C/W) but larger footprint and cost	Choose for higher-power designs (>600 W) where thermal headroom is limiting and PCB space permits

Compared with STP15N65M2 and IXTH15N65X2, the SIHF15N65E-GE3 delivers the lowest gate charge among TO-220 FULLPAK 650 V MOSFETs, making it optimal for compact, medium-power SMPS where gate drive efficiency and layout simplicity are prioritized over ultimate thermal performance or ultra-low C_oss.

Availability

SIHF15N65E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHF15N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHF15N65E-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered specifically for high-efficiency, high-density switch-mode power conversion in enterprise and infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for SIHF15N65E-GE3 at 100 °C case temperature?

The SIHF15N65E-GE3 has a maximum continuous drain current (I_D) of 10 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal derating from the 15 A value at 25 °C, based on a linear derating factor of 0.27 W/°C and the device's 34 W power dissipation limit. Designers must ensure heatsink design maintains case temperature ≤100 °C under worst-case load and ambient conditions to sustain this current.

Does SIHF15N65E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, the SIHF15N65E-GE3 is fully rated for single-pulse avalanche energy (E_AS) at 286 mJ, verified per the test condition: V_DD = 50 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.5 A. This rating confirms robustness against inductive switching stresses in real-world applications such as PFC and motor drives. The device is not rated for repetitive avalanche; operation must remain within SOA limits for repeated events.

What is the gate threshold voltage range for SIHF15N65E-GE3, and why does it matter for drive circuit design?

The SIHF15N65E-GE3 has a gate threshold voltage (V_GS(th)) range of 2 V to 4 V at I_D = 250 μA. This wide range means gate drivers must deliver ≥10 V to ensure full enhancement across process and temperature variation. Using only 5 V logic-level drive risks incomplete turn-on and excessive R_DS(on), leading to thermal runaway. Designers should verify gate drive strength (≥1 A peak) to charge the 96 nC total gate charge within required switching times.

How does the body diode performance of SIHF15N65E-GE3 compare to standard FRDs in PFC applications?

The SIHF15N65E-GE3 body diode has a forward voltage (V_SD) of ≤1.2 V at I_S = 8 A and T_J = 25 °C, with t_rr = 325 ns and Q_rr = 4.6 μC. While slower and higher-V_F than dedicated fast recovery diodes (FRDs), its integrated nature eliminates extra component count and layout complexity in synchronous PFC designs. It is suitable for discontinuous-conduction-mode (DCM) PFC where reverse recovery is less critical, but not recommended for continuous-conduction-mode (CCM) PFC without careful dead-time optimization.

Is SIHF15N65E-GE3 compatible with lead-free reflow soldering processes?

Yes, the SIHF15N65E-GE3 is qualified for lead-free soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings. Its TO-220 FULLPAK package uses matte tin-plated leads and complies with RoHS Directive 2011/65/EU and halogen-free requirements per Vishay specification 99912. Standard JEDEC J-STD-020D moisture sensitivity level (MSL) applies; baking prior to reflow is not required for MSL 1 devices.

SIHF15N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1640 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF15N65E-GE3 FAQ

1.How can I place an order for SIHF15N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF15N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF15N65E-GE3 reliable?

The price and inventory of SIHF15N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF15N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF15N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF15N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF15N65E-GE3?

SIHF15N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF15N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF15N65E-GE3?

For technical support, including SIHF15N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF15N65E-GE3 requirements.

6.How does Aetrix verify that SIHF15N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF15N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF15N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF15N65E-GE3?

All SIHF15N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF15N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF15N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHF15N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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