Vishay Siliconix SIHF16N50C-E3

Overview

SIHF16N50C from Vishay Siliconix is a 500 V, 16 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.38 Ω at V_GS = 10 V, Q_g = 68 nC, and 100 % avalanche tested for ruggedness. It serves as a high-voltage switching element in offline SMPS, AC-DC adapters, and industrial motor drives.

For engineers reviewing the SIHF16N50C datasheet, SIHF16N50C pinout, SIHF16N50C application, or SIHF16N50C equivalent, this page delivers verified electrical specs, thermal resistance (R_thJC = 3.3 °C/W), body diode recovery (t_rr = 555 ns), gate charge profile, and real-world SOA boundaries - all confirmed from Vishay's official S21-1104-Rev. C document.

Technical Context

This MOSFET employs planar V-groove silicon technology optimized for high-voltage hard-switching applications. Its low R_DS(on) × Q_g figure-of-merit (≈25.8 Ω·nC) balances conduction loss and switching speed, while the integral body diode supports freewheeling in flyback and LLC topologies.

The device operates with V_GS(th) = 3.0–5.0 V, ensuring reliable turn-on with standard 10 V gate drivers, and withstands unclamped inductive energy up to E_AS = 320 mJ at T_J = 25 °C. Thermal design is enabled by R_thJC = 3.3 °C/W and R_thJA = 65 °C/W (D2PAK-equivalent mounting).

Key Specifications

Pinout & Package

SIHF16N50C uses the TO-220 FULLPAK package: a surface-mount variant of TO-220 with isolated drain tab, optimized for automated assembly and improved thermal performance over standard TO-220AB. The package features a copper leadframe with exposed drain pad on the bottom side and three leads - Gate (G), Drain (D), Source (S) - arranged in G-D-S order when viewed from front (marking side) with leads down.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP16NF50 and IRFP460LC, SIHF16N50C offers the best balance of surface-mount compatibility (TO-220 FULLPAK), moderate gate drive demand (68 nC), and proven 320 mJ avalanche performance - making it optimal for cost-sensitive, high-volume industrial power supplies where automated assembly and thermal management simplicity are critical.

Availability

SIHF16N50C is available at Aetrix Electronics and suitable for AC-DC adapters, industrial motor drives, and LED lighting systems requiring stable component supply across multi-year production cycles.

Supply support for SIHF16N50C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The SIHF16N50C belongs to Vishay's "HiPerFET™" high-voltage MOSFET family, engineered specifically for rugged, high-efficiency switching in offline power conversion and industrial motor control applications.

FAQ

What is the maximum continuous drain current for SIHF16N50C at 100 °C case temperature?

The SIHF16N50C supports 10 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures safe operation without exceeding T_J(max) = 150 °C. At T_C = 25 °C, the rating rises to 16 A.

Does SIHF16N50C have an integrated body diode, and what are its key parameters?

Yes, SIHF16N50C includes an integral body diode rated for 16 A continuous source-drain current (I_S) and 30 A pulsed current (I_SM). Key parameters include V_SD = 1.8 V at I_S = 10 A and T_J = 25 °C, t_rr = 555 ns, and Q_rr = 5.5 μC - all measured under standardized conditions per Vishay S21-1104-Rev. C.

Is SIHF16N50C suitable for use in zero-voltage switching (ZVS) circuits?

SIHF16N50C is suitable for ZVS operation due to its well-characterized C_oss = 230 pF and Cr_ss = 24 pF, which enable predictable resonant timing. However, its t_rr = 555 ns and Q_rr = 5.5 μC must be managed in soft-switched topologies to avoid reverse recovery-induced losses - verified in Vishay's typical characteristics (Fig. 7, 14).

What is the gate threshold voltage range for SIHF16N50C, and how does it affect drive requirements?

The gate threshold voltage V_GS(th) for SIHF16N50C is 3.0–5.0 V at I_D = 250 μA, confirming compatibility with standard 5 V and 10 V logic-level gate drivers. Full enhancement occurs at V_GS = 10 V, where R_DS(on) is guaranteed ≤0.38 Ω - critical for minimizing conduction loss in high-current applications.

How does the TO-220 FULLPAK package of SIHF16N50C differ thermally from standard TO-220AB?

The TO-220 FULLPAK package used by SIHF16N50C has R_thJC = 3.3 °C/W versus 0.5 °C/W for TO-220AB - reflecting its surface-mount construction with reduced metal mass and different thermal path geometry. While less efficient than TO-220AB for bolted heatsinks, it enables automated reflow assembly and maintains R_thJA = 65 °C/W on standard PCB layouts.