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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF18N50C-E3

Name: SIHF18N50C-E3
Brand: Vishay Siliconix
SKU: SIHF18N50C-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF18N50C-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHF18N50C-E3.pdf

Description:: MOSFET N-CH 500V 18A TO220-3

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Product details

Overview

SIHF18N50C-E3 from Vishay Siliconix is a 500 V, 18 A N-channel power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.225 Ω at V_GS = 10 V, Q_g = 76 nC, and 100 % avalanche tested for ruggedness. It delivers high peak current capability (I_DM = 72 A) and dV/dt robustness (5 V/ns), suited for offline SMPS primary-side switching.

For engineers reviewing the SIHF18N50C-E3 datasheet, SIHF18N50C-E3 pinout, SIHF18N50C-E3 application, or SIHF18N50C-E3 equivalent, key selection criteria include its 500 V V_DS, low gate charge, improved body diode recovery (t_rr = 503 ns, Q_rr = 6.7 µC), thermal resistance (R_thJC = 3.29 °C/W), and RoHS-compliant lead-free termination.

Technical Context

This MOSFET employs planar vertical DMOS technology with optimized gate oxide and cell layout to achieve low R_DS(on) × Q_g figure-of-merit. Its body diode exhibits enhanced reverse recovery performance (t_rr = 503 ns, Q_rr = 6.7 µC) and dV/dt ruggedness up to 5 V/ns under specified test conditions.

The device operates across -55 °C to +150 °C junction temperature range and supports unclamped inductive switching with E_AS = 361 mJ. Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25 % margin for transient overvoltage
R_DS(on)	0.225 Ω @ V_GS = 10 V - enables <1.5 W conduction loss at 18 A continuous drain current
Q_g	76 nC - determines gate drive power requirement and switching speed in hard-switched topologies
E_AS	361 mJ - specifies single-pulse avalanche energy handling without failure
t_rr/Q_rr	503 ns / 6.7 µC - reduces switching losses and EMI in flyback and LLC resonant converters
R_thJC	3.29 °C/W - defines thermal path efficiency from junction to case in TO-220 FULLPAK mounting
I_D (T_C = 100 °C)	11 A - usable continuous current rating under typical heatsink conditions

Pinout & Package

SIHF18N50C-E3 is housed in TO-220 FULLPAK package with isolated tab (drain-connected), offering improved thermal performance over standard TO-220 while maintaining footprint compatibility. The package uses lead-free terminations per RoHS Directive 2002/95/EC.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to metal tab	Must be mounted to heatsink with electrical isolation unless system ground reference permits direct connection
Source	Reference node for gate drive and current return path	Serves as common reference for gate driver IC and sense resistor; low-inductance layout critical for switching stability
Gate	Control input for channel conduction	Requires low-impedance drive (R_g = 7.5 Ω typical test condition) to manage dv/dt and EMI

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	Reduces combined conduction and switching losses in high-frequency SMPS designs
100 % avalanche tested	Guarantees robustness against inductive load transients without derating
Improved t_rr/Q_rr	Lowers diode recovery losses and associated EMI in discontinuous conduction mode operation
dV/dt ruggedness (5 V/ns)	Prevents false turn-on during high-slew-rate voltage transitions in bridge configurations
RoHS-compliant lead-free termination	Meets environmental compliance requirements for industrial and consumer end equipment

Applications

Server Power Supply	Industrial Motor Drive
Use Scenario: Primary-side switch in 80+ Gold certified 1 kW server PSU using active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from AC line to isolated DC bus. Use Value: 500 V rating and 361 mJ E_AS ensure reliability during line surges; low Q_g enables >100 kHz operation with minimal gate drive loss.	Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC drive operating from 400 V DC link. IC Role / Device Role / Timing Role: Hard-switched power stage transistor managing PWM-controlled motor phase currents. Use Value: 11 A continuous current at 100 °C case temperature supports thermal design margin; dV/dt ruggedness prevents shoot-through in fast-rising bus conditions.
LED Streetlight Driver	Telecom Rectifier Module
Use Scenario: Primary switch in isolated flyback LED driver delivering 150 W to high-brightness arrays. IC Role / Device Role / Timing Role: High-side switching FET regulating output power via primary-side sensing. Use Value: Optimized t_rr/Q_rr minimizes recovery-related losses and audible noise during dimming cycles.	Use Scenario: OR-ing FET in 48 V telecom rectifier module with hot-swap capability. IC Role / Device Role / Timing Role: Low-loss bidirectional blocking switch enabling redundant power feed management. Use Value: Low R_DS(on) reduces conduction loss in parallel power paths; 100 % avalanche test ensures survivability during fault insertion.

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 80+ Gold certified 1 kW server PSU using active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from AC line to isolated DC bus.

Use Value: 500 V rating and 361 mJ E_AS ensure reliability during line surges; low Q_g enables >100 kHz operation with minimal gate drive loss.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC drive operating from 400 V DC link.

IC Role / Device Role / Timing Role: Hard-switched power stage transistor managing PWM-controlled motor phase currents.

Use Value: 11 A continuous current at 100 °C case temperature supports thermal design margin; dV/dt ruggedness prevents shoot-through in fast-rising bus conditions.

LED Streetlight Driver

Telecom Rectifier Module

Use Scenario: Primary switch in isolated flyback LED driver delivering 150 W to high-brightness arrays.

IC Role / Device Role / Timing Role: High-side switching FET regulating output power via primary-side sensing.

Use Value: Optimized t_rr/Q_rr minimizes recovery-related losses and audible noise during dimming cycles.

Use Scenario: OR-ing FET in 48 V telecom rectifier module with hot-swap capability.

IC Role / Device Role / Timing Role: Low-loss bidirectional blocking switch enabling redundant power feed management.

Use Value: Low R_DS(on) reduces conduction loss in parallel power paths; 100 % avalanche test ensures survivability during fault insertion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18NF50	R_DS(on) = 0.28 Ω (higher), Q_g = 60 nC (lower), TO-220 package	Lower gate charge improves switching speed but higher on-resistance increases conduction loss at high current	Prefer when gate drive strength is limited and thermal margin allows higher R_DS(on)
IRFP460LC	R_DS(on) = 0.27 Ω, Q_g = 120 nC, no avalanche rating specified	Higher Q_g demands stronger gate driver; lacks guaranteed avalanche capability	Select only if system-level protection eliminates need for intrinsic avalanche robustness

Compared with STP18NF50 and IRFP460LC, SIHF18N50C-E3 offers superior R_DS(on) × Q_g balance and verified avalanche performance-critical for unclamped inductive loads-while its TO-220 FULLPAK package provides better thermal resistance than standard TO-220 alternatives.

Availability

SIHF18N50C-E3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, LED streetlight drivers, and telecom rectifier modules requiring stable component supply and long-term manufacturability.

Supply support for SIHF18N50C-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-performance analog solutions.

The SiHF18N50C-E3 belongs to Vishay's "C-series" high-voltage power MOSFET family, engineered for demanding offline switching applications where avalanche capability, low switching losses, and thermal efficiency are essential.

FAQ

What is the maximum continuous drain current for SIHF18N50C-E3 at 100 °C case temperature?

The SIHF18N50C-E3 supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating is limited by junction temperature (T_J ≤ 150 °C) and assumes proper heatsinking. At T_C = 25 °C, the rating increases to 18 A. Derating follows the linear factor of 0.3 W/°C for the TO-220 FULLPAK package, directly impacting usable current in thermally constrained layouts.

Does SIHF18N50C-E3 have a fully rated avalanche capability?

Yes, SIHF18N50C-E3 is 100 % avalanche tested per datasheet specification, with a single-pulse avalanche energy rating (E_AS) of 361 mJ under defined test conditions (V_DD = 50 V, I_AS = 17 A, L = 2.5 mH, R_g = 25 Ω). This validated ruggedness enables reliable operation in circuits subject to inductive switching transients without external snubbers in many designs.

What is the gate threshold voltage range for SIHF18N50C-E3?

The gate threshold voltage (V_GS(th)) for SIHF18N50C-E3 is specified as 3.0 V to 5.0 V at T_J = 25 °C and I_D = 250 µA. This range ensures compatibility with standard 5 V and 10 V logic-level gate drivers while providing sufficient noise margin to prevent spurious turn-on in noisy power environments.

How does the body diode performance of SIHF18N50C-E3 compare to standard MOSFETs?

SIHF18N50C-E3 features improved body diode characteristics: t_rr = 503 ns and Q_rr = 6.7 µC at T_J = 25 °C, IF = I_S, dI/dt = 100 A/µs, VR = 35 V. These values reflect optimized diode structure for lower recovery loss and reduced EMI-particularly beneficial in flyback and resonant converters where secondary-side diode replacement is not feasible.

Is SIHF18N50C-E3 compatible with lead-free reflow soldering processes?

Yes, SIHF18N50C-E3 uses lead-free terminations and is rated for peak reflow temperatures up to 300 °C for 10 seconds, complying with RoHS Directive 2002/95/EC. The device's packaging and internal construction are qualified for standard Pb-free reflow profiles, including JEDEC J-STD-020 moisture sensitivity level (MSL) handling per Vishay documentation.

SIHF18N50C-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2942 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

SIHF18N50C-E3 FAQ

1.How can I place an order for SIHF18N50C-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF18N50C-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF18N50C-E3 reliable?

The price and inventory of SIHF18N50C-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF18N50C-E3 is usually 5 days.

3.What payment methods are accepted for SIHF18N50C-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF18N50C-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF18N50C-E3?

SIHF18N50C-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF18N50C-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF18N50C-E3?

For technical support, including SIHF18N50C-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF18N50C-E3 requirements.

6.How does Aetrix verify that SIHF18N50C-E3 is sourced from the original manufacturer or authorized distributors?

All SIHF18N50C-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF18N50C-E3 meets industry standards.

7.What is the process for return or replacement of SIHF18N50C-E3?

All SIHF18N50C-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF18N50C-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF18N50C-E3 part is unused and in its original packaging.

Return procedure for SIHF18N50C-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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