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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF18N50D-E3

Name: SIHF18N50D-E3
Brand: Vishay Siliconix
SKU: SIHF18N50D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF18N50D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF18N50D-E3.pdf

Description:: MOSFET N-CH 500V 18A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF18N50D-E3 from Vishay Siliconix is a 500 V, 18 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.28 Ω (max) at V_GS = 10 V, Q_g = 76 nC (max), and avalanche-rated (E_AS = 115 mJ). It serves as a high-voltage switching element in offline SMPS primary-side circuits, server power supplies, and induction heating inverters.

For engineers reviewing the SIHF18N50D-E3 datasheet, SIHF18N50D-E3 pinout, SIHF18N50D-E3 application, or SIHF18N50D-E3 equivalent, key selection criteria include its 500 V V_DS rating, low figure-of-merit (R_DS(on) × Q_g), rugged body diode with t_rr = 354 ns, and TO-220 FULLPAK thermal performance (R_thJC = 3.2 °C/W).

Technical Context

This device employs planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures reliable turn-on with standard 10 V gate drivers, while low C_iss (1500 pF typ.) and C_oss (131 pF typ.) reduce capacitive losses during high-frequency operation.

The integrated body diode is rated for continuous source-drain current up to 18 A and exhibits controlled reverse recovery (Q_rr = 3.9 μC, I_RRM = 21 A), enabling robust performance in freewheeling and synchronous rectification roles without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for transient overvoltage in industrial and telecom power systems
R_DS(on) max @ 10 V	0.28 Ω - enables <1.5 W conduction loss at 9 A, suitable for 300–500 W SMPS primary switches
Q_g max	76 nC - determines gate drive power requirement; compatible with standard 1 A peak gate drivers at ≤100 kHz
E_AS	115 mJ - unclamped inductive switching capability allows safe operation under worst-case load dump or short-circuit conditions
t_r/t_f	36–72 ns / 30–60 ns - fast switching enables high-frequency operation up to 200 kHz with reduced switching loss
R_thJC	3.2 °C/W - enables 39 W dissipation with ≤125 °C junction rise above case, supporting forced-air-cooled designs
V_SD @ 9 A	1.2 V - low forward drop reduces body-diode conduction loss during dead-time in half-bridge topologies

Pinout & Package

SIHF18N50D-E3 is housed in a TO-220 FULLPAK package with exposed drain tab for enhanced thermal transfer and mechanical robustness. The package features three leads: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives 10 V logic-level signal; requires ≤76 nC charge for full enhancement; high-impedance node sensitive to ESD
D	Drain (high-side switch node)	Connected to high-voltage DC bus (up to 500 V); electrically tied to metal tab for low-inductance heat sinking
S	Source (power return/reference)	Serves as common reference for gate drive and current sensing; carries full load current (18 A continuous)

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	21.3 Ω·nC - improves efficiency in hard-switched converters by balancing conduction and switching losses
Avalanche energy rated (UIS)	115 mJ - eliminates need for external snubbers in inductive load switching, reducing BOM count and layout complexity
Rugged body diode	t_rr = 354 ns, Q_rr = 3.9 μC - enables reliable freewheeling in bridge configurations without oscillation or shoot-through risk
TO-220 FULLPAK construction	Exposed drain tab + molded body - provides 3.2 °C/W junction-to-case thermal resistance and superior mechanical stability vs. standard TO-220
High dV/dt immunity	24 V/ns (T_J = 125 °C) - prevents false turn-on during fast voltage transients in high-noise power stage environments

Applications

Server Power Supplies	Induction Heating Inverters
Use Scenario: Primary-side switching in 80 PLUS Platinum-certified 1 kW server PSUs operating at 100–150 kHz. IC Role / Device Role / Timing Role: High-voltage power switch in LLC resonant half-bridge, handling 400 V DC bus and 12–18 A peak current. Use Value: Low R_DS(on) and fast switching minimize total losses, enabling >96 % efficiency at full load without liquid cooling.	Use Scenario: Full-bridge inverter stage in 3–5 kW domestic induction cooktops operating at 20–50 kHz. IC Role / Device Role / Timing Role: Hard-switched power switch managing 450 V DC link and pulsed 25 A loads with high di/dt. Use Value: Avalanche rating and rugged body diode withstand repetitive inductive kickback, eliminating external clamping diodes.
Industrial Welding Equipment	Battery Charger Front-Ends
Use Scenario: Primary switch in IGBT-gated SCR-based inverter welders requiring high surge current tolerance. IC Role / Device Role / Timing Role: Main DC-link switch controlling 300–600 V bus during arc initiation and sustained welding cycles. Use Value: 53 A pulsed drain current (I_DM) and 115 mJ UIS support repeated 10 ms surges without degradation.	Use Scenario: Active clamp flyback or asymmetrical half-bridge switch in 3 kW EVSE onboard chargers. IC Role / Device Role / Timing Role: High-side switch in isolated AC/DC front-end converting 230 V AC to 400 V DC bus. Use Value: 500 V V_DS rating accommodates line peaks up to 325 V plus safety margin, ensuring long-term reliability.

Server Power Supplies

Induction Heating Inverters

Use Scenario: Primary-side switching in 80 PLUS Platinum-certified 1 kW server PSUs operating at 100–150 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch in LLC resonant half-bridge, handling 400 V DC bus and 12–18 A peak current.

Use Value: Low R_DS(on) and fast switching minimize total losses, enabling >96 % efficiency at full load without liquid cooling.

Use Scenario: Full-bridge inverter stage in 3–5 kW domestic induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Hard-switched power switch managing 450 V DC link and pulsed 25 A loads with high di/dt.

Use Value: Avalanche rating and rugged body diode withstand repetitive inductive kickback, eliminating external clamping diodes.

Industrial Welding Equipment

Battery Charger Front-Ends

Use Scenario: Primary switch in IGBT-gated SCR-based inverter welders requiring high surge current tolerance.

IC Role / Device Role / Timing Role: Main DC-link switch controlling 300–600 V bus during arc initiation and sustained welding cycles.

Use Value: 53 A pulsed drain current (I_DM) and 115 mJ UIS support repeated 10 ms surges without degradation.

Use Scenario: Active clamp flyback or asymmetrical half-bridge switch in 3 kW EVSE onboard chargers.

IC Role / Device Role / Timing Role: High-side switch in isolated AC/DC front-end converting 230 V AC to 400 V DC bus.

Use Value: 500 V V_DS rating accommodates line peaks up to 325 V plus safety margin, ensuring long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N50M5	R_DS(on) = 0.22 Ω (typ), Q_g = 42 nC, TO-220FP package, no UIS rating	Lacks avalanche energy specification; lower gate charge favors higher-frequency ZVS designs	Prefer when switching frequency >200 kHz and avalanche stress is absent; verify layout for lack of UIS margin
IXTH18N50L	R_DS(on) = 0.25 Ω (max), Q_g = 62 nC, TO-247 package, E_AS = 100 mJ	Larger TO-247 footprint; slightly lower R_DS(on) but higher thermal resistance (R_thJC = 1.2 °C/W)	Choose when board space allows TO-247 and higher peak power demands justify larger package; not drop-in compatible

Compared with STP18N50M5 and IXTH18N50L, SIHF18N50D-E3 offers the highest UIS rating (115 mJ) and TO-220 FULLPAK's optimized thermal path (3.2 °C/W), making it preferred for ruggedized 100–150 kHz industrial SMPS where reliability under transient overload is critical.

Availability

SIHF18N50D-E3 is available at Aetrix Electronics and suitable for server power supplies, induction heating inverters, and industrial welding equipment requiring stable component supply and long-lifecycle support.

Supply support for SIHF18N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The D Series power MOSFETs, including SIHF18N50D-E3, were engineered for high-voltage hard-switching applications such as telecom rectifiers, industrial motor drives, and induction heating, prioritizing avalanche robustness and low FOM.

FAQ

What is the maximum continuous drain current rating for SIHF18N50D-E3 at 100 °C case temperature?

The SIHF18N50D-E3 has a continuous drain current rating of 11 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures safe operation within its 39 W power dissipation ceiling when properly heatsinked.

Does SIHF18N50D-E3 support logic-level gate drive?

No, SIHF18N50D-E3 is not a logic-level MOSFET. Its gate threshold voltage ranges from 3.0 V to 5.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. Reliable enhancement requires ≥10 V gate drive; operation below 8 V risks incomplete turn-on and excessive conduction loss.

What is the significance of the "E3" suffix in SIHF18N50D-E3?

The "E3" suffix denotes lead (Pb)-free termination per JEDEC J-STD-609, with matte tin plating over copper leadframe. SIHF18N50D-E3 complies with RoHS Directive 2011/65/EU and is suitable for lead-free reflow soldering processes peaking at 300 °C for 10 seconds.

Can SIHF18N50D-E3 be used in synchronous rectification topologies?

SIHF18N50D-E3 is not recommended for synchronous rectification due to its relatively high R_DS(on) (0.28 Ω) and body diode characteristics optimized for switching-not conduction. Its V_SD = 1.2 V and Q_rr = 3.9 μC are better suited for freewheeling than low-loss rectification; dedicated SR controllers with low-R_DS(on) MOSFETs are preferred.

How does the TO-220 FULLPAK package of SIHF18N50D-E3 differ from standard TO-220?

The TO-220 FULLPAK package used by SIHF18N50D-E3 features an exposed drain tab fully encapsulated in molded plastic, unlike standard TO-220 which exposes bare copper. This improves creepage/clearance, enhances mechanical robustness, and maintains R_thJC = 3.2 °C/W-comparable to TO-247-while retaining TO-220 footprint compatibility.

SIHF18N50D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF18N50D-E3 FAQ

1.How can I place an order for SIHF18N50D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF18N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF18N50D-E3 reliable?

The price and inventory of SIHF18N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF18N50D-E3 is usually 5 days.

3.What payment methods are accepted for SIHF18N50D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF18N50D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF18N50D-E3?

SIHF18N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF18N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF18N50D-E3?

For technical support, including SIHF18N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF18N50D-E3 requirements.

6.How does Aetrix verify that SIHF18N50D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHF18N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF18N50D-E3 meets industry standards.

7.What is the process for return or replacement of SIHF18N50D-E3?

All SIHF18N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF18N50D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF18N50D-E3 part is unused and in its original packaging.

Return procedure for SIHF18N50D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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