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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF22N60E-E3

Name: SIHF22N60E-E3
Brand: Vishay Siliconix
SKU: SIHF22N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF22N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF22N60E-E3.pdf

Description:: MOSFET N-CH 600V 21A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF22N60E-E3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, optimized for high-efficiency switch-mode power supplies and PFC stages. It features R_DS(on) = 0.18 Ω (max) at V_GS = 10 V, Q_g = 86 nC (max), and avalanche-rated UIS capability of 367 mJ - enabling robust operation in hard-switched industrial and telecom power converters.

For engineers reviewing the SIHF22N60E-E3 datasheet, SIHF22N60E-E3 pinout, SIHF22N60E-E3 application, or SIHF22N60E-E3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, and proven performance in 480 V bus PFC circuits with dV/dt immunity up to 70 V/ns at T_J = 125 °C.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and gate oxide design to achieve balanced conduction and switching losses. Its body diode exhibits t_rr = 344 ns and Q_rr = 5.3 μC at I_F = 11 A, supporting moderate-frequency ZVS and quasi-resonant topologies.

The device operates with V_GS(th) = 2–4 V, ensuring reliable turn-on with standard 10 V gate drivers, and maintains stable R_DS(on) over temperature (0.71 V/°C dV_DS/dT_J). Thermal resistance R_thJC = 3.6 °C/W enables 35 W continuous dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to ~560 V DC bus with 10 % margin in PFC and SMPS designs
R_DS(on) max @ 10 V	0.18 Ω - limits conduction loss to ≤ 40 W at 15 A RMS in continuous conduction mode PFC
Q_g max	86 nC - determines gate drive power requirement (~1.7 mW per MHz at 10 V swing) and influences switching speed control
E_AS	367 mJ - enables single-pulse unclamped inductive switching without failure under 5.1 A, 28.2 mH, 25 Ω gate conditions
t_r/t_f	27–54 ns / 35–70 ns - defines minimum practical switching period (~200 ns) for >2 MHz operation in resonant converters
I_D cont @ T_C = 100 °C	13 A - sets thermal derating limit for heatsink-limited designs in enclosed server PSU enclosures
C_iss	1920 pF - impacts Miller effect and gate driver stability; requires ≥ 1 Ω series gate resistance for clean turn-on

Pinout & Package

TO-220 FULLPAK package with isolated drain tab (exposed copper pad), 3-pin through-hole mounting, and 3.6 °C/W junction-to-case thermal resistance. Dimensions conform to Vishay Document 91359 (Option 1 or 2), with lead-free (Pb-free) and halogen-free compliance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Electrically connected to exposed metal tab - must be mounted to heatsink with electrically insulating thermal interface; carries full load current and high dv/dt
Gate	Control terminal	High-impedance MOS gate requiring <100 nA leakage control; sensitive to ESD; driven by 10 V logic-level signal for full enhancement
Source	Reference node	Common return for gate drive and load current; forms Kelvin connection for accurate current sensing when used with external shunt

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	15.5 Ω·nC - reduces total power loss in high-frequency PFC stages where both conduction and switching losses dominate
Avalanche energy rating (UIS)	367 mJ - eliminates need for external snubbers in inductive load switching applications like motor drives and welding inverters
Body diode reverse recovery (Q_rr)	5.3 μC - enables use in synchronous rectification and bidirectional topologies without excessive diode loss or voltage overshoot
High dV/dt immunity	70 V/ns at T_J = 125 °C - prevents false turn-on during fast transient events in high-noise industrial environments
Lead (Pb)-free and halogen-free	E3 suffix indicates RoHS-compliant termination and packaging - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1)

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switching in 3.3 kW 48 V output telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: Main power switch handling 400–560 V DC bus, operating at 100–200 kHz with zero-voltage switching assistance. Use Value: Low Q_g and C_iss reduce gate drive loss and improve ZVS margin; 600 V rating accommodates 10 % line surge without derating.	Use Scenario: Boost PFC stage in dual-output 1.5 kW server PSU with universal AC input (90–264 V AC). IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch controlling input current waveform and regulating 400 V DC bus. Use Value: 0.18 Ω R_DS(on) minimizes conduction loss at 15 A peak; avalanche rating handles line transients without clamping circuitry.
Solar PV Inverter	Induction Heating
Use Scenario: DC-link switching in 5 kW string inverter H-bridge stage interfacing PV array to grid via transformerless topology. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration managing 600 V DC link with 16 kHz PWM modulation. Use Value: 70 V/ns dV/dt immunity prevents spurious turn-on during fast bridge commutation; TO-220 FULLPAK enables direct heatsink mounting.	Use Scenario: Resonant inverter half-bridge in 8 kW induction cooker operating at 20–50 kHz with variable frequency control. IC Role / Device Role / Timing Role: Hard-switched power switch driving series-resonant tank with high di/dt (>100 A/μs) and reverse recovery stress. Use Value: Body diode t_rr = 344 ns and Q_rr = 5.3 μC reduce switching loss and EMI during freewheeling; UIS rating withstands unclamped inductive kick.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 3.3 kW 48 V output telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch handling 400–560 V DC bus, operating at 100–200 kHz with zero-voltage switching assistance.

Use Value: Low Q_g and C_iss reduce gate drive loss and improve ZVS margin; 600 V rating accommodates 10 % line surge without derating.

Use Scenario: Boost PFC stage in dual-output 1.5 kW server PSU with universal AC input (90–264 V AC).

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch controlling input current waveform and regulating 400 V DC bus.

Use Value: 0.18 Ω R_DS(on) minimizes conduction loss at 15 A peak; avalanche rating handles line transients without clamping circuitry.

Solar PV Inverter

Induction Heating

Use Scenario: DC-link switching in 5 kW string inverter H-bridge stage interfacing PV array to grid via transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration managing 600 V DC link with 16 kHz PWM modulation.

Use Value: 70 V/ns dV/dt immunity prevents spurious turn-on during fast bridge commutation; TO-220 FULLPAK enables direct heatsink mounting.

Use Scenario: Resonant inverter half-bridge in 8 kW induction cooker operating at 20–50 kHz with variable frequency control.

IC Role / Device Role / Timing Role: Hard-switched power switch driving series-resonant tank with high di/dt (>100 A/μs) and reverse recovery stress.

Use Value: Body diode t_rr = 344 ns and Q_rr = 5.3 μC reduce switching loss and EMI during freewheeling; UIS rating withstands unclamped inductive kick.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK60Z	R_DS(on) = 0.22 Ω (max), Q_g = 75 nC, TO-247 package, no UIS rating	Larger footprint and higher conduction loss; lacks avalanche ruggedness for unclamped inductive loads	Prefer SIHF22N60E-E3 where board space is constrained and avalanche immunity is required in PFC or motor drive.
IXTH24N60L2	R_DS(on) = 0.19 Ω (max), Q_g = 92 nC, TO-247 package, 300 mJ E_AS	Higher gate charge increases driver loss; same voltage rating but lower avalanche energy than SIHF22N60E-E3	Choose SIHF22N60E-E3 for lower total switching loss in high-frequency PFC; select IXTH24N60L2 only if TO-247 mechanical fit is mandatory.

Compared with STW20NK60Z and IXTH24N60L2, the SIHF22N60E-E3 delivers superior FOM (15.5 vs. 16.5 and 17.5 Ω·nC), higher UIS rating (367 vs. 0 and 300 mJ), and smaller TO-220 FULLPAK footprint - making it optimal for space-constrained, high-reliability 600 V power conversion.

Availability

SIHF22N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHF22N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHF22N60E-E3 belongs to Vishay's E Series Power MOSFET family, engineered for high-voltage, medium-current switching in industrial and communications power systems where low gate charge and avalanche reliability are critical.

FAQ

What is the maximum continuous drain current for SIHF22N60E-E3 at case temperature 100 °C?

The SIHF22N60E-E3 supports 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 21 A rating at T_C = 25 °C, based on a linear derating factor of 0.28 W/°C and R_thJC = 3.6 °C/W. Designers must ensure heatsink design maintains case temperature ≤ 100 °C under worst-case ambient and airflow conditions to sustain this current.

Does SIHF22N60E-E3 have avalanche capability, and how is it rated?

Yes, the SIHF22N60E-E3 is avalanche energy rated with a single-pulse unclamped inductive switching (UIS) capability of 367 mJ, tested under V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.1 A. This rating allows the SIHF22N60E-E3 to safely absorb inductive energy without external snubbers in applications such as motor drives and welding inverters, provided pulse width remains within junction temperature limits.

What is the gate threshold voltage range for SIHF22N60E-E3, and why does it matter?

The SIHF22N60E-E3 has a gate threshold voltage V_GS(th) of 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise or leakage. A well-defined threshold supports predictable timing in PWM-controlled power stages and simplifies gate drive design compared to logic-level or superjunction devices with narrower or lower thresholds.

How does the body diode performance of SIHF22N60E-E3 compare to standard FRDs?

The SIHF22N60E-E3 body diode exhibits t_rr = 344 ns and Q_rr = 5.3 μC at I_F = 11 A, dI/dt = 100 A/μs, and T_J = 25 °C. While slower than dedicated fast recovery diodes (FRDs), this performance is sufficient for 100–200 kHz PFC and resonant converters. Its integrated nature eliminates layout complexity, but designers should verify softness factor and reverse recovery snap-off behavior in high-dI/dt applications using actual waveforms from the SIHF22N60E-E3 datasheet.

Is SIHF22N60E-E3 compatible with lead-free reflow soldering processes?

Yes, the SIHF22N60E-E3 is qualified for lead-free reflow soldering with a peak temperature of 300 °C for 10 seconds, as stated in the Soldering Recommendations section. The "E3" suffix explicitly denotes lead (Pb)-free termination and halogen-free construction, meeting JEDEC J-STD-020 MSL-1 requirements. No special pre-bake or flux selection is needed beyond standard Pb-free process controls.

SIHF22N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF22N60E-E3 FAQ

1.How can I place an order for SIHF22N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF22N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF22N60E-E3 reliable?

The price and inventory of SIHF22N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF22N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHF22N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF22N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF22N60E-E3?

SIHF22N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF22N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF22N60E-E3?

For technical support, including SIHF22N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF22N60E-E3 requirements.

6.How does Aetrix verify that SIHF22N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHF22N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF22N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHF22N60E-E3?

All SIHF22N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF22N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF22N60E-E3 part is unused and in its original packaging.

Return procedure for SIHF22N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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