Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF22N60E-GE3

Name: SIHF22N60E-GE3
Brand: Vishay Siliconix
SKU: SIHF22N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHF22N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF22N60E-GE3.pdf

Description:: MOSFET N-CH 600V 21A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:946

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHF22N60E-GE3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.18 Ω (max) at V_GS = 10 V, Q_g = 86 nC (max), and avalanche-rated (E_AS = 367 mJ). It serves as a high-voltage switching element in primary-side SMPS, PFC stages, and solar inverter DC-link circuits.

For engineers reviewing the SIHF22N60E-GE3 datasheet, SIHF22N60E-GE3 pinout, SIHF22N60E-GE3 application, or SIHF22N60E-GE3 equivalent, key selection criteria include its 600 V V_DS rating, low gate charge for reduced switching loss, TO-220 FULLPAK thermal performance (R_thJC = 3.6 °C/W), and UIS ruggedness for inductive load handling.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage power conversion. Its gate structure minimizes Q_g and C_iss (1920 pF typ.), enabling fast turn-on with low drive power while maintaining robust dV/dt immunity (70 V/ns at T_J = 125 °C).

The integrated body diode supports synchronous rectification and freewheeling in hard-switched topologies. Diode parameters-V_SD = 1.2 V (typ. at I_S = 11 A), t_rr = 344 ns (typ.), Q_rr = 5.3 μC-are specified under standardized conditions (dI/dt = 100 A/μs, V_R = 25 V) to support accurate loss modeling in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full-line transients in 400 V DC bus applications without clamping.
R_DS(on) max	0.18 Ω at V_GS = 10 V, T_J = 25 °C - Enables <1.9 W conduction loss at 11 A continuous drain current.
Q_g max	86 nC - Reduces gate driver power requirement and enables >100 kHz switching in PFC designs.
E_AS	367 mJ - Supports unclamped inductive switching events up to 5.1 A with L = 28.2 mH.
R_thJC	3.6 °C/W - Delivers 35 W maximum power dissipation with minimal case-to-heatsink thermal resistance.
I_D cont.	21 A at T_C = 25 °C - Sustains high-current operation in server PSU primary switches with active heatsinking.
C_iss	1920 pF typ. at V_DS = 100 V - Low input capacitance improves voltage gain stability in gate-drive networks.

Pinout & Package

TO-220 FULLPAK package with isolated drain tab (exposed copper on backside), 3-pin through-hole mounting, and M3 screw torque specification of 0.6 Nm. Thermal path optimized via direct die-to-tab interface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-voltage current path	Internally connected to exposed metal tab - must be electrically isolated from heatsink unless referenced to system ground.
Gate (G)	Control terminal	High-impedance MOS gate requiring ≤ ±30 V drive; sensitive to ESD - requires gate resistor (R_g = 4.7 Ω typical) for controlled switching.
Source (S)	Reference node for gate drive and current return	Common connection point for source current and gate drive return; establishes local ground reference for driver IC placement.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	15.5 Ω·nC (0.18 Ω × 86 nC) - Balances conduction and switching losses for optimal efficiency in 50–200 kHz SMPS.
Avalanche energy rating	367 mJ single-pulse - Eliminates need for external snubbers in flyback and resonant LLC primary switches.
Ultra-low Q_gd/Q_g ratio	24/86 ≈ 28% - Minimizes Miller plateau duration, improving dv/dt immunity and reducing cross-conduction risk in half-bridges.
Body diode t_rr & Q_rr	344 ns / 5.3 μC - Predictable reverse recovery behavior enables reliable synchronous rectification in secondary-side control.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile - suitable for lead-free assembly processes.

Applications

Server Power Supply Primary Switch	Solar PV Inverter DC-Link Switch
Use Scenario: High-efficiency 80 PLUS Titanium AC/DC front-end converting 230 VAC to 400 VDC bus. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) PFC boost stage operating at 70–100 kHz. Use Value: Low Q_g and R_DS(on) reduce total losses below 2.5 W at 11 A, supporting >98% PFC efficiency at full load.	Use Scenario: DC-side switching in string inverters handling 600–1000 V DC input from photovoltaic arrays. IC Role / Device Role / Timing Role: High-side switch in H-bridge or NPC topology managing bidirectional energy flow during MPPT and grid synchronization. Use Value: 600 V V_DS rating with 150 °C T_J capability ensures margin against DC bus overvoltage during islanding events.
Industrial Motor Drive Inverter Stage	Fluorescent Ballast Electronic Control Gear
Use Scenario: 3-phase inverter output stage driving 0.75–2.2 kW induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Lower-leg switch in IGBT/MOSFET hybrid inverter, commutating at 8–16 kHz with forced air cooling. Use Value: Avalanche rating allows safe operation during motor short-circuit fault conditions without desaturation protection circuitry.	Use Scenario: High-frequency resonant inverter powering 32–40 W T8/T5 fluorescent lamps with dimming control. IC Role / Device Role / Timing Role: Half-bridge switch operating at 25–65 kHz, providing zero-voltage switching (ZVS) for lamp ignition and regulation. Use Value: Low C_oss (90 pF typ.) and fast t_f (35–70 ns) enable clean ZVS transitions and minimize EMI generation in lighting EMI filters.

Server Power Supply Primary Switch

Solar PV Inverter DC-Link Switch

Use Scenario: High-efficiency 80 PLUS Titanium AC/DC front-end converting 230 VAC to 400 VDC bus.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) PFC boost stage operating at 70–100 kHz.

Use Value: Low Q_g and R_DS(on) reduce total losses below 2.5 W at 11 A, supporting >98% PFC efficiency at full load.

Use Scenario: DC-side switching in string inverters handling 600–1000 V DC input from photovoltaic arrays.

IC Role / Device Role / Timing Role: High-side switch in H-bridge or NPC topology managing bidirectional energy flow during MPPT and grid synchronization.

Use Value: 600 V V_DS rating with 150 °C T_J capability ensures margin against DC bus overvoltage during islanding events.

Industrial Motor Drive Inverter Stage

Fluorescent Ballast Electronic Control Gear

Use Scenario: 3-phase inverter output stage driving 0.75–2.2 kW induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Lower-leg switch in IGBT/MOSFET hybrid inverter, commutating at 8–16 kHz with forced air cooling.

Use Value: Avalanche rating allows safe operation during motor short-circuit fault conditions without desaturation protection circuitry.

Use Scenario: High-frequency resonant inverter powering 32–40 W T8/T5 fluorescent lamps with dimming control.

IC Role / Device Role / Timing Role: Half-bridge switch operating at 25–65 kHz, providing zero-voltage switching (ZVS) for lamp ignition and regulation.

Use Value: Low C_oss (90 pF typ.) and fast t_f (35–70 ns) enable clean ZVS transitions and minimize EMI generation in lighting EMI filters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60ND	R_DS(on) = 0.19 Ω (max), Q_g = 75 nC (max), TO-220FP package, no UIS rating	Lacks avalanche energy specification - requires external clamping in inductive loads	Preferred where gate drive power is critical and system-level protection handles transient energy.
IXFH22N60P	R_DS(on) = 0.20 Ω (max), Q_g = 92 nC (max), TO-247AC package, E_AS = 420 mJ	Larger TO-247 footprint and higher Q_g, but superior avalanche margin and thermal mass	Chosen when board space permits and higher reliability under repetitive surge stress is required.

Compared with STP22NM60ND and IXFH22N60P, SIHF22N60E-GE3 offers the best balance of low gate charge, certified UIS ruggedness, and compact TO-220 FULLPAK thermal performance - making it optimal for space-constrained, high-reliability 600 V SMPS designs.

Availability

SIHF22N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHF22N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The E Series Power MOSFETs, including SIHF22N60E-GE3, were engineered for high-voltage, high-frequency switching in telecom, server, and renewable energy power conversion systems where low conduction + switching loss trade-offs are critical.

FAQ

What is the maximum continuous drain current rating for SIHF22N60E-GE3 at 100 °C case temperature?

The SIHF22N60E-GE3 supports a continuous drain current of 13 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and must be validated against actual PCB layout, heatsink interface, and ambient airflow in the final design. The SIHF22N60E-GE3 datasheet provides detailed SOA curves for pulse operation beyond this limit.

Does SIHF22N60E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, SIHF22N60E-GE3 is fully rated for single-pulse avalanche energy (E_AS = 367 mJ), verified per JEDEC standard JESD24-1 using V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.1 A. This rating applies to unclamped inductive switching events and is not intended for repetitive operation. The SIHF22N60E-GE3 datasheet includes test circuit diagrams and waveform definitions for validation.

What is the gate threshold voltage range for SIHF22N60E-GE3, and how does it affect drive requirements?

The SIHF22N60E-GE3 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This standard-level threshold requires ≥10 V gate drive for full enhancement and low R_DS(on). Driving below 8 V risks incomplete turn-on and excessive conduction loss. The SIHF22N60E-GE3 is not a logic-level device and must be paired with a dedicated gate driver capable of sourcing/sinking >1 A peak current.

How does the TO-220 FULLPAK package of SIHF22N60E-GE3 differ from standard TO-220 in thermal performance?

The TO-220 FULLPAK package used by SIHF22N60E-GE3 integrates an insulated drain tab with enhanced thermal path from die to case, achieving R_thJC = 3.6 °C/W - significantly lower than standard TO-220 (typically ~4.5–5.0 °C/W). This improvement results from reduced interfacial resistance between silicon die and copper tab, allowing higher power density in compact layouts. The SIHF22N60E-GE3 package drawing confirms isolation compliance per UL 60950-1.

Can SIHF22N60E-GE3 be used in parallel configurations, and what layout considerations apply?

SIHF22N60E-GE3 supports paralleling due to its positive R_DS(on) temperature coefficient, which promotes current sharing above 25 °C junction temperature. Successful implementation requires matched gate drive paths (equal R_g, trace length, and inductance), symmetrical source routing to minimize loop inductance, and individual Kelvin-source connections for gate driver feedback. The SIHF22N60E-GE3 datasheet recommends <500 ps skew between gate signals for stable operation.

SIHF22N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF22N60E-GE3 FAQ

1.How can I place an order for SIHF22N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF22N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF22N60E-GE3 reliable?

The price and inventory of SIHF22N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF22N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF22N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF22N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF22N60E-GE3?

SIHF22N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF22N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF22N60E-GE3?

For technical support, including SIHF22N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF22N60E-GE3 requirements.

6.How does Aetrix verify that SIHF22N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF22N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF22N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF22N60E-GE3?

All SIHF22N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF22N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF22N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHF22N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …