Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF22N60S-E3

Name: SIHF22N60S-E3
Brand: Vishay Siliconix
SKU: SIHF22N60S-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHF22N60S-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF22N60S-E3.pdf

Description:: MOSFET N-CH 600V 22A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,455

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHF22N60S-E3 from Vishay Siliconix is a 600 V, 22 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.190 Ω @ V_GS = 10 V, Q_g = 98 nC max, and 100 % avalanche tested. It serves as a high-voltage switching element in PFC stages and hard-switching inverters requiring robust dV/dt ruggedness (37 V/ns) and ultra-low gate charge.

For engineers reviewing the SIHF22N60S-E3 datasheet, SIHF22N60S-E3 pinout, SIHF22N60S-E3 application, or SIHF22N60S-E3 equivalent, key selection criteria include its 650 V V_DS rating at T_J max, 250 W P_D, 690 mJ single-pulse avalanche energy, and suitability for industrial UPS and solar inverter primary-side switching where thermal reliability and repetitive avalanche capability are critical.

Technical Context

This S Series MOSFET employs planar silicon technology with optimized gate oxide and cell layout to achieve low R_DS(on) × Q_g figure-of-merit (FoM), enabling high-efficiency hard-switching operation. Its body diode exhibits t_rr = 462–690 ns and Q_rr = 8.3–16 μC, supporting moderate-frequency freewheeling in bridge configurations.

The device is rated for continuous operation up to T_J = 150 °C, with R_thJC = 3.4 °C/W ensuring effective heat transfer to heatsinks. Its dV/dt ruggedness of 37 V/ns (T_J = 125 °C) and reverse diode dV/dt of 5.3 V/ns confirm immunity to parasitic turn-on in high-noise power converter environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage in PFC and inverter applications
R_DS(on) max	0.190 Ω @ V_GS = 10 V - enables <2.2 W conduction loss at 11 A, reducing heatsink requirements in 1–3 kW systems
Q_g max	98 nC - allows fast switching with moderate gate driver strength (e.g., 1–2 A peak), minimizing switching losses in 50–100 kHz topologies
E_AS	690 mJ - provides margin for unclamped inductive switching events without failure, critical in motor drive fault handling
T_J Range	–55 to +150 °C - ensures reliable operation in industrial ambient conditions and sealed enclosures without derating below 100 °C case temperature
dV/dt Ruggedness	37 V/ns @ T_J = 125 °C - prevents false turn-on during high-slew-rate voltage transients in half-bridge configurations

Pinout & Package

SIHF22N60S-E3 is housed in a TO-220 FULLPAK package with isolated tab (drain-connected), offering improved creepage/clearance versus standard TO-220 and simplified mounting with single screw.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level drive; threshold V_GS(th) = 2.0–4.0 V ensures reliable turn-on with standard gate drivers
D (Drain)	High-side power output	Internally connected to metal tab; requires electrical isolation when mounted to heatsink
S (Source)	Power return / reference node	Serves as common reference for gate drive and current sensing; ties to PCB ground plane in low-side switch configuration

Key Features

Feature	Design Value
100 % avalanche tested	Guarantees single-pulse E_AS ≥ 690 mJ and repetitive EAR ≥ 25 mJ, eliminating need for external snubbers in inductive load switching
Ultra-low Q_g (98 nC max)	Reduces gate drive power and enables use of cost-effective 1 A gate drivers in 50–100 kHz PFC and inverter stages
dV/dt ruggedness (37 V/ns)	Prevents spurious turn-on during fast voltage transitions in half-bridge and LLC resonant converters without added gate resistors
Low R_DS(on) × Q_g FoM	Optimizes trade-off between conduction and switching losses, delivering >96 % efficiency in 2 kW server PSU PFC circuits

Applications

PFC Power Supply Stages	Solar Inverters
Use Scenario: Boost converter in 1–3 kW AC/DC front-end for telecom rectifiers and industrial PSUs. IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) boost topology, operating at 50–100 kHz. Use Value: Low R_DS(on) minimizes conduction loss under full load; high dV/dt rating ensures stable operation despite line-voltage transients and EMI noise.	Use Scenario: DC-link switching stage in string inverters converting PV array output (600–1000 V DC) to grid-synchronized AC. IC Role / Device Role / Timing Role: Primary-side hard-switched MOSFET in two-level inverter H-bridge, handling bidirectional current with body diode commutation. Use Value: 690 mJ E_AS withstands inductive kickback during fault clearing; 150 °C T_J rating supports compact heatsinking in outdoor-rated enclosures.
Uninterruptible Power Supplies	Motor Control Drives
Use Scenario: Online double-conversion UPS with battery backup, requiring zero-transfer-time switching between utility and inverter modes. IC Role / Device Role / Timing Role: Output inverter switch in 3–5 kVA systems, operating in 6–12 kHz PWM with active clamping or snubberless design. Use Value: Repetitive avalanche energy (EAR = 25 mJ) sustains repeated short-circuit events during transfer switching; low Q_gd/Q_g ratio improves voltage-controlled turn-off stability.	Use Scenario: Field-oriented control (FOC) inverter for HVAC compressors and industrial pumps, using space-vector PWM at 8–16 kHz. IC Role / Device Role / Timing Role: Low-side switching device in three-phase IGBT/MOSFET hybrid inverter, conducting freewheeling current through integrated body diode. Use Value: Body diode t_rr = 462–690 ns and Q_rr = 8.3–16 μC limit reverse recovery losses and EMI generation during commutation.

PFC Power Supply Stages

Solar Inverters

Use Scenario: Boost converter in 1–3 kW AC/DC front-end for telecom rectifiers and industrial PSUs.

IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) boost topology, operating at 50–100 kHz.

Use Value: Low R_DS(on) minimizes conduction loss under full load; high dV/dt rating ensures stable operation despite line-voltage transients and EMI noise.

Use Scenario: DC-link switching stage in string inverters converting PV array output (600–1000 V DC) to grid-synchronized AC.

IC Role / Device Role / Timing Role: Primary-side hard-switched MOSFET in two-level inverter H-bridge, handling bidirectional current with body diode commutation.

Use Value: 690 mJ E_AS withstands inductive kickback during fault clearing; 150 °C T_J rating supports compact heatsinking in outdoor-rated enclosures.

Uninterruptible Power Supplies

Motor Control Drives

Use Scenario: Online double-conversion UPS with battery backup, requiring zero-transfer-time switching between utility and inverter modes.

IC Role / Device Role / Timing Role: Output inverter switch in 3–5 kVA systems, operating in 6–12 kHz PWM with active clamping or snubberless design.

Use Value: Repetitive avalanche energy (EAR = 25 mJ) sustains repeated short-circuit events during transfer switching; low Q_gd/Q_g ratio improves voltage-controlled turn-off stability.

Use Scenario: Field-oriented control (FOC) inverter for HVAC compressors and industrial pumps, using space-vector PWM at 8–16 kHz.

IC Role / Device Role / Timing Role: Low-side switching device in three-phase IGBT/MOSFET hybrid inverter, conducting freewheeling current through integrated body diode.

Use Value: Body diode t_rr = 462–690 ns and Q_rr = 8.3–16 μC limit reverse recovery losses and EMI generation during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22N60M2	R_DS(on) = 0.185 Ω @ 10 V, Q_g = 85 nC, TO-220FP package, no avalanche rating specified	Lacks guaranteed E_AS testing; suitable only in snubber-protected topologies	Prefer SIHF22N60S-E3 where unclamped inductive stress or field reliability is required
IXFH22N60P	R_DS(on) = 0.200 Ω @ 10 V, Q_g = 105 nC, TO-247 package, 100 % avalanche tested	Larger TO-247 footprint increases PCB area and thermal resistance (R_thJC = 0.5 °C/W vs. 3.4 °C/W)	Choose SIHF22N60S-E3 for space-constrained TO-220 designs needing identical performance in smaller form factor

Compared with STP22N60M2 and IXFH22N60P, SIHF22N60S-E3 delivers best-in-class R_DS(on) × Q_g FoM in TO-220 FULLPAK, combines verified avalanche robustness with industry-leading dV/dt immunity, and enables higher power density in PFC and inverter modules without sacrificing ruggedness.

Availability

SIHF22N60S-E3 is available at Aetrix Electronics and suitable for PFC power supply stages, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant lead-free termination.

Supply support for SIHF22N60S-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The S Series power MOSFET product line was engineered for high-efficiency, high-voltage switching in hard-switched PFC, UPS, and renewable energy inverters-prioritizing avalanche ruggedness, low gate charge, and thermal stability.

FAQ

What is the maximum continuous drain current for SIHF22N60S-E3 at 100 °C case temperature?

The SIHF22N60S-E3 supports 13 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by R_thJC = 3.4 °C/W and junction-to-case power dissipation; operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 150 °C.

Does SIHF22N60S-E3 have a fully rated avalanche capability?

Yes, SIHF22N60S-E3 is 100 % avalanche tested per datasheet specification, with guaranteed single-pulse E_AS = 690 mJ and repetitive EAR = 25 mJ. This validated ruggedness enables reliable operation in unclamped inductive switching circuits such as motor drives and UPS inverters without external protection components.

What is the gate threshold voltage range for SIHF22N60S-E3?

The gate-source threshold voltage V_GS(th) for SIHF22N60S-E3 is 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range ensures compatibility with standard 10 V gate drivers while providing margin against false turn-on due to noise or leakage in high-density power boards.

Can SIHF22N60S-E3 be used in synchronous rectification applications?

No, SIHF22N60S-E3 is not optimized for synchronous rectification. Its body diode forward voltage V_SD = 1.2 V at 22 A and reverse recovery characteristics (t_rr = 462–690 ns) are typical of general-purpose high-voltage MOSFETs-not low-Q_rr, low-V_F devices designed for SR. Use dedicated SR controllers with logic-level MOSFETs instead.

What is the thermal resistance from junction to case for SIHF22N60S-E3?

The maximum junction-to-case thermal resistance R_thJC for SIHF22N60S-E3 is 3.4 °C/W, measured from junction to the drain-connected metal tab. This value enables direct mounting to heatsinks with thermal interface material, supporting 250 W power dissipation at ΔT = 850 °C (i.e., T_J – T_C = 250 W × 3.4 °C/W).

SIHF22N60S-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 190mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF22N60S-E3 FAQ

1.How can I place an order for SIHF22N60S-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF22N60S-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF22N60S-E3 reliable?

The price and inventory of SIHF22N60S-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF22N60S-E3 is usually 5 days.

3.What payment methods are accepted for SIHF22N60S-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF22N60S-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF22N60S-E3?

SIHF22N60S-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF22N60S-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF22N60S-E3?

For technical support, including SIHF22N60S-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF22N60S-E3 requirements.

6.How does Aetrix verify that SIHF22N60S-E3 is sourced from the original manufacturer or authorized distributors?

All SIHF22N60S-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF22N60S-E3 meets industry standards.

7.What is the process for return or replacement of SIHF22N60S-E3?

All SIHF22N60S-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF22N60S-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF22N60S-E3 part is unused and in its original packaging.

Return procedure for SIHF22N60S-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …