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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF22N65E-GE3

Name: SIHF22N65E-GE3
Brand: Vishay Siliconix
SKU: SIHF22N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF22N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF22N65E-GE3.pdf

Description:: MOSFET N-CH 650V 22A TO220

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Product details

Overview

SIHF22N65E-GE3 from Vishay Siliconix is a 650 V, 22 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.18 Ω (max) at V_GS = 10 V, Q_g = 110 nC (max), and avalanche-rated (E_AS = 691 mJ). It delivers low conduction and switching losses for high-efficiency power conversion in server PSUs and solar inverters.

For engineers reviewing the SIHF22N65E-GE3 datasheet, SIHF22N65E-GE3 pinout, SIHF22N65E-GE3 application, or SIHF22N65E-GE3 equivalent, key selection criteria include its 650 V blocking voltage, 22 A continuous drain rating at T_C = 25 °C, ultra-low gate charge, and TO-220 FULLPAK thermal performance with R_thJC = 3.6 °C/W.

Technical Context

This device employs planar high-voltage silicon technology optimized for hard-switched SMPS topologies. Its low C_iss (2415 pF typ) and minimized Q_gd/Q_g ratio (32/110 nC) reduce Miller-induced turn-off delay and improve controllability under high dV/dt conditions up to 70 V/ns.

The integrated body diode supports synchronous rectification and PFC boost stages, with t_rr = 400 ns (typ), Q_rr = 5.9 μC (typ), and soft recovery characteristics validated at I_F = 11 A, dI/dt = 100 A/μs, and V_R = 400 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Supports 400 V DC bus designs with ≥30 % margin for transient overvoltage in telecom and industrial SMPS.
R_DS(on) max @ 10 V	0.18 Ω - Enables <1.8 W conduction loss at 11 A, critical for thermally constrained TO-220 FULLPAK layouts.
Q_g max	110 nC - Reduces gate drive power requirement and allows use of lower-cost, lower-current gate drivers.
E_AS	691 mJ - Rated unclamped inductive switching energy ensures robustness during startup, overload, or fault events without external snubbers.
R_thJC	3.6 °C/W - Enables 35 W continuous dissipation with modest heatsinking, supporting compact 1–3 kW power stage designs.
I_D cont @ T_C = 25 °C	22 A - Matches typical current requirements of single-phase PFC and LLC half-bridge primary switches.
C_iss typ	2415 pF - Low input capacitance minimizes gate drive losses and improves high-frequency switching efficiency above 100 kHz.

Pinout & Package

TO-220 FULLPAK package with exposed copper drain pad on underside for enhanced thermal conduction; 3-pin through-hole mounting; lead (Pb)-free and halogen-free per ordering suffix -GE3.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level gate drive; threshold voltage 2–4 V enables compatibility with standard PWM controllers.
D (Drain)	High-side power output	Connected to exposed copper tab; electrically tied to drain metallization-requires isolation from heatsink unless floating design.
S (Source)	Power return / reference node	Serves as common return for gate drive and load current; low-inductance source loop critical for EMI control in fast-switching applications.

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	19.8 Ω·nC (0.18 Ω × 110 nC) - Directly correlates with reduced total switching + conduction loss in hard-switched converters.
Avalanche energy rated (UIS)	691 mJ - Eliminates need for external clamping circuits in inductive load switching, improving system reliability.
Ultra-low Q_gd/Q_g ratio	29 % (32/110 nC) - Minimizes Miller plateau duration, enabling faster, more predictable turn-off under high dV/dt.
Soft-recovery body diode	t_rr = 400 ns, Q_rr = 5.9 μC - Reduces voltage overshoot and EMI during commutation in PFC and synchronous rectifier stages.
High dV/dt immunity	70 V/ns (T_J = 125 °C) - Ensures noise-immune operation in high-speed, high-bus-voltage systems without false triggering.

Applications

Server Power Supplies	Solar PV Inverters
Use Scenario: Primary-side switch in 80+ Titanium-certified 1–2 kW AC/DC front-end supplies. IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) PFC boost stage and LLC resonant converter primary. Use Value: 650 V rating and 22 A current capability support 380–400 V DC bus operation with margin; low Q_g enables >100 kHz switching without excessive gate loss.	Use Scenario: DC-link switching in string inverters handling 600–1000 V DC input from photovoltaic arrays. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in three-phase inverter bridge legs operating at 16–20 kHz. Use Value: Avalanche rating and 650 V V_DS ensure safe operation during grid fault transients; TO-220 FULLPAK's R_thJC = 3.6 °C/W sustains thermal stability at 15–20 A RMS.
Industrial Motor Drives	Fluorescent Ballast Lighting
Use Scenario: Output stage in 0.5–3 kW variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: Upper-leg switch in 3-phase inverter bridge, switching at 4–16 kHz with sinusoidal PWM modulation. Use Value: Soft-recovery body diode reduces shoot-through risk during dead-time commutation; low R_DS(on) cuts conduction loss in partial-load operation.	Use Scenario: Resonant half-bridge switch in electronic ballasts driving 20–40 W fluorescent lamps. IC Role / Device Role / Timing Role: High-frequency (25–65 kHz) switching transistor in series-resonant topology with zero-voltage switching (ZVS). Use Value: Low C_iss and fast t_r/t_f (33/38 ns typ) enable efficient ZVS across wide dimming range; TO-220 FULLPAK provides mechanical robustness in high-vibration lighting fixtures.

Server Power Supplies

Solar PV Inverters

Use Scenario: Primary-side switch in 80+ Titanium-certified 1–2 kW AC/DC front-end supplies.

IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) PFC boost stage and LLC resonant converter primary.

Use Value: 650 V rating and 22 A current capability support 380–400 V DC bus operation with margin; low Q_g enables >100 kHz switching without excessive gate loss.

Use Scenario: DC-link switching in string inverters handling 600–1000 V DC input from photovoltaic arrays.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in three-phase inverter bridge legs operating at 16–20 kHz.

Use Value: Avalanche rating and 650 V V_DS ensure safe operation during grid fault transients; TO-220 FULLPAK's R_thJC = 3.6 °C/W sustains thermal stability at 15–20 A RMS.

Industrial Motor Drives

Fluorescent Ballast Lighting

Use Scenario: Output stage in 0.5–3 kW variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: Upper-leg switch in 3-phase inverter bridge, switching at 4–16 kHz with sinusoidal PWM modulation.

Use Value: Soft-recovery body diode reduces shoot-through risk during dead-time commutation; low R_DS(on) cuts conduction loss in partial-load operation.

Use Scenario: Resonant half-bridge switch in electronic ballasts driving 20–40 W fluorescent lamps.

IC Role / Device Role / Timing Role: High-frequency (25–65 kHz) switching transistor in series-resonant topology with zero-voltage switching (ZVS).

Use Value: Low C_iss and fast t_r/t_f (33/38 ns typ) enable efficient ZVS across wide dimming range; TO-220 FULLPAK provides mechanical robustness in high-vibration lighting fixtures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW22N65M5	650 V, 22 A, R_DS(on) = 0.19 Ω, Q_g = 95 nC, D²PAK package	Higher thermal resistance (R_thJC ≈ 4.5 °C/W); requires larger PCB copper area for equivalent cooling	Preferred where surface-mount assembly is mandatory and board space permits larger thermal pads.
IXFH22N65X2	650 V, 22 A, R_DS(on) = 0.17 Ω, Q_g = 105 nC, TO-247AC package	Superior R_thJC = 2.5 °C/W but larger footprint and higher cost; no integrated full-pak drain tab	Chosen when maximum power density and junction temperature margin are prioritized over cost and size constraints.

Compared with STW22N65M5 and IXFH22N65X2, SIHF22N65E-GE3 offers the best balance of low gate charge, TO-220-compatible form factor, and full-pak thermal performance-enabling compact, cost-sensitive 1–3 kW power stages without sacrificing ruggedness.

Availability

SIHF22N65E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant/halogen-free sourcing.

Supply support for SIHF22N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFETs-including SIHF22N65E-GE3-are engineered for high-efficiency, high-voltage switching in server, telecom, and renewable energy systems where low R_DS(on), low Q_g, and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for SIHF22N65E-GE3 at 100 °C case temperature?

The SIHF22N65E-GE3 has a continuous drain current rating of 14 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and must be applied in thermal design calculations alongside R_thJC = 3.6 °C/W to ensure junction temperature remains ≤150 °C under worst-case ambient and airflow conditions. The SIHF22N65E-GE3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)".

Does SIHF22N65E-GE3 support gate drive voltages below 10 V?

Yes, SIHF22N65E-GE3 operates with gate voltages down to its threshold range of 2–4 V, but full enhancement and guaranteed R_DS(on) ≤ 0.18 Ω require V_GS = 10 V. At V_GS = 5 V, R_DS(on) rises significantly-typical data shows ~0.35 Ω-making it unsuitable for low-voltage gate drive without derating. The SIHF22N65E-GE3 is not a logic-level MOSFET; dedicated 10 V gate drivers are recommended for optimal performance.

Is SIHF22N65E-GE3 suitable for use in avalanche mode?

Yes, SIHF22N65E-GE3 is explicitly avalanche energy rated with E_AS = 691 mJ (single-pulse, test condition: V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 7 A). This rating validates its ability to safely absorb inductive energy during unclamped inductive switching events, such as transformer leakage spikes or motor freewheeling. The SIHF22N65E-GE3 datasheet specifies this in both Absolute Maximum Ratings and Product Summary sections.

What is the body diode forward voltage of SIHF22N65E-GE3 at 11 A and 25 °C?

The body diode forward voltage (V_SD) of SIHF22N65E-GE3 is 1.2 V maximum at I_S = 11 A, T_J = 25 °C, and V_GS = 0 V, as stated in the "Drain-Source Body Diode Characteristics" section of the datasheet. This value reflects typical conduction loss in freewheeling or synchronous rectification modes and is consistent with its N-channel superjunction architecture.

How does the TO-220 FULLPAK package of SIHF22N65E-GE3 differ from standard TO-220?

The TO-220 FULLPAK package used by SIHF22N65E-GE3 features an exposed copper drain pad on the underside that serves as both electrical connection and primary thermal path-unlike standard TO-220, which uses insulated mounting holes. This design lowers R_thJC to 3.6 °C/W and eliminates need for insulating washers, simplifying heatsink integration. The SIHF22N65E-GE3 mechanical drawings confirm full-pad dimensions and thermal interface requirements per Vishay document 91359.

SIHF22N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2415 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF22N65E-GE3 FAQ

1.How can I place an order for SIHF22N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF22N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF22N65E-GE3 reliable?

The price and inventory of SIHF22N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF22N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF22N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF22N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF22N65E-GE3?

SIHF22N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF22N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF22N65E-GE3?

For technical support, including SIHF22N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF22N65E-GE3 requirements.

6.How does Aetrix verify that SIHF22N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF22N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF22N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF22N65E-GE3?

All SIHF22N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF22N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF22N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHF22N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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