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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF23N60E-GE3

Name: SIHF23N60E-GE3
Brand: Vishay Siliconix
SKU: SIHF23N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF23N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF23N60E-GE3.pdf

Description:: MOSFET N-CH 600V 23A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:4,755

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Product details

Overview

SIHF23N60E-GE3 from Vishay Siliconix is a 600 V, 23 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, optimized for high-efficiency switch-mode power supplies and PFC stages. It delivers R_DS(on) = 0.158 Ω at V_GS = 10 V, Q_g = 95 nC, and avalanche-rated (E_AS = 353 mJ), enabling robust hard-switching in telecom rectifiers and solar inverters.

For engineers reviewing the SIHF23N60E-GE3 datasheet, SIHF23N60E-GE3 pinout, SIHF23N60E-GE3 application, or SIHF23N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, and rated unclamped inductive switching capability - critical for evaluating conduction/switching trade-offs in 600 V primary-side SMPS designs.

Technical Context

This MOSFET employs planar high-voltage silicon technology with optimized cell pitch and gate oxide design to achieve balanced conduction and switching performance. Its body diode exhibits t_rr = 768 ns and Q_rr = 12.8 μC at T_J = 25 °C, supporting moderate-frequency hard-commutated topologies.

The device features a fixed gate threshold voltage range of 2–4 V, ±30 V gate-source rating, and dV/dt immunity up to 37 V/ns at T_J = 125 °C - enabling reliable operation in noisy high-dv/dt environments such as industrial motor drives and welding inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified systems with 50 % safety margin for surge transients
R_DS(on) max @ 10 V	0.158 Ω - enables ≤ 3.3 W conduction loss at 10 A continuous drain current
Q_g max	95 nC - reduces gate drive power requirement and allows use with standard 1 A peak drivers
E_AS	353 mJ - provides single-pulse avalanche ruggedness without external snubbers in inductive loads
C_iss	2418 pF - contributes to predictable turn-on timing and reduced Miller-induced oscillation risk
T_J range	−55 to +150 °C - supports operation in sealed industrial enclosures and outdoor PV inverters
R_thJC	3.6 °C/W - enables 35 W dissipation with ≤ 50 °C case-to-ambient rise using standard heatsinking

Pinout & Package

TO-220 FULLPAK package with isolated drain tab, 3-pin through-hole mounting, and Pb-free/halogen-free construction per JEDEC MS-001. Exposed copper drain pad on underside improves thermal transfer to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <100 nA leakage handling; sensitive to ESD
D (Drain)	High-side power terminal	Connected to exposed metal tab; carries full load current and must be electrically isolated from heatsink unless referenced to system ground
S (Source)	Reference node / return path	Common reference for gate drive and current sensing; ties to power ground in low-side configurations

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	15.0 Ω·nC - minimizes combined conduction and switching losses in 50–100 kHz PFC and LLC converters
Avalanche energy rating	353 mJ - eliminates need for external clamping in flyback or forward converter primary switches
Body diode reverse recovery	t_rr = 768 ns, Q_rr = 12.8 μC - enables use in synchronous rectification where fast but not ultra-fast recovery is acceptable
High dV/dt immunity	37 V/ns at 125 °C - prevents false turn-on during high-slew-rate switching transitions in multi-kW inverters
Thermal resistance (Junction-to-Case)	3.6 °C/W - allows direct mounting to aluminum heatsinks without thermal interface material in lower-power applications

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: Main power switch operating at 100 kHz with 480 V DC bus. Use Value: Low Q_g reduces gate driver losses; 600 V rating accommodates 400 V AC input surges plus 20 % margin.	Use Scenario: DC-link switching stage in string inverter converting 600–1000 V DC to 230 V AC. IC Role / Device Role / Timing Role: High-side IGBT replacement in two-level inverter leg with 16 kHz PWM. Use Value: Avalanche rating handles inductive kickback during fault clearing; R_DS(on) enables <1.5 W conduction loss at 15 A RMS.
Industrial Motor Drive	Fluorescent Ballast
Use Scenario: Half-bridge output stage in 5 kW variable frequency drive feeding induction motor. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter with 120 °C ambient temperature. Use Value: 150 °C max junction temperature and 3.6 °C/W R_thJC support sustained operation under forced-air cooling.	Use Scenario: Resonant half-bridge switch in electronic ballast powering 400 W HID lamp. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) transistor operating at 50–100 kHz. Use Value: Low C_iss and controlled Q_gd/Q_gs ratio improve ZVS soft-start reliability and reduce EMI.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch operating at 100 kHz with 480 V DC bus.

Use Value: Low Q_g reduces gate driver losses; 600 V rating accommodates 400 V AC input surges plus 20 % margin.

Use Scenario: DC-link switching stage in string inverter converting 600–1000 V DC to 230 V AC.

IC Role / Device Role / Timing Role: High-side IGBT replacement in two-level inverter leg with 16 kHz PWM.

Use Value: Avalanche rating handles inductive kickback during fault clearing; R_DS(on) enables <1.5 W conduction loss at 15 A RMS.

Industrial Motor Drive

Fluorescent Ballast

Use Scenario: Half-bridge output stage in 5 kW variable frequency drive feeding induction motor.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter with 120 °C ambient temperature.

Use Value: 150 °C max junction temperature and 3.6 °C/W R_thJC support sustained operation under forced-air cooling.

Use Scenario: Resonant half-bridge switch in electronic ballast powering 400 W HID lamp.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) transistor operating at 50–100 kHz.

Use Value: Low C_iss and controlled Q_gd/Q_gs ratio improve ZVS soft-start reliability and reduce EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22N60M2	R_DS(on) = 0.17 Ω, Q_g = 72 nC, TO-220FP package, no UIS rating	Lacks avalanche energy rating; requires external clamping in inductive circuits	Preferred where gate drive power is constrained but avalanche ruggedness is not required
IXFH24N60P	R_DS(on) = 0.18 Ω, Q_g = 85 nC, TO-247 package, E_AS = 420 mJ	Larger TO-247 footprint; higher thermal mass; superior avalanche margin	Selected when higher surge robustness and board-level thermal headroom are prioritized over cost and size

Compared with STP22N60M2 and IXFH24N60P, the SIHF23N60E-GE3 offers the best balance of low gate charge, certified avalanche capability, and compact TO-220 FULLPAK form factor - making it optimal for space-constrained, medium-power 600 V switching applications where both efficiency and ruggedness matter.

Availability

SIHF23N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHF23N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The E Series Power MOSFETs, including SIHF23N60E-GE3, were engineered for high-efficiency, high-voltage switch-mode power conversion - targeting telecom rectifiers, PFC circuits, and renewable energy inverters where low FOM and ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for SIHF23N60E-GE3 at 100 °C case temperature?

The SIHF23N60E-GE3 supports 15 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures safe operation without exceeding 150 °C junction temperature under typical heatsink conditions. The SIHF23N60E-GE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHF23N60E-GE3 have a qualified avalanche rating, and how is it tested?

Yes, the SIHF23N60E-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 353 mJ at T_J = 25 °C. Testing follows JEDEC standard JESD24-1 using L = 28.2 mH, R_g = 25 Ω, I_AS = 5 A, and V_DD = 50 V. The SIHF23N60E-GE3 passes this stress without parameter degradation, confirming ruggedness for inductive load switching without snubber networks.

What is the gate threshold voltage range for SIHF23N60E-GE3, and how does it affect drive requirements?

The SIHF23N60E-GE3 has a V_GS(th) range of 2–4 V at I_D = 250 μA, confirming compatibility with standard 10 V gate drivers. This threshold ensures full enhancement while avoiding unintended turn-on from noise; the SIHF23N60E-GE3 requires ≥ 8 V for reliable low-R_DS(on) operation. Gate leakage remains ≤ ±100 nA at ±20 V, simplifying bias network design.

Can SIHF23N60E-GE3 be used in zero-voltage switching (ZVS) resonant topologies?

Yes, the SIHF23N60E-GE3 supports ZVS operation due to its low C_iss = 2418 pF and controlled C_rss/C_iss ratio. Its Q_gd = 25 nC and Q_gs = 16 nC enable predictable Miller plateau timing, facilitating soft switching in LLC and half-bridge resonant converters. The SIHF23N60E-GE3's body diode t_rr = 768 ns is compatible with typical ZVS dead-time margins above 500 ns.

Is SIHF23N60E-GE3 RoHS-compliant and halogen-free?

Yes, SIHF23N60E-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and IEC 61249-2-21 requirements. The "-GE3" suffix explicitly denotes Vishay's Green, lead-free, and halogen-free packaging standard. Material declarations and compliance documentation are available via Vishay's website under document number 91553.

SIHF23N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 158mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2418 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF23N60E-GE3 FAQ

1.How can I place an order for SIHF23N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF23N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF23N60E-GE3 reliable?

The price and inventory of SIHF23N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF23N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF23N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF23N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF23N60E-GE3?

SIHF23N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF23N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF23N60E-GE3?

For technical support, including SIHF23N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF23N60E-GE3 requirements.

6.How does Aetrix verify that SIHF23N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF23N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF23N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF23N60E-GE3?

All SIHF23N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF23N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF23N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHF23N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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