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Vishay Siliconix SIHF28N60EF-GE3
- Part No.:
- SIHF28N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
SIHF28N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 28A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:5,923
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Product details
Overview
SIHF28N60EF-GE3 from Vishay Siliconix is a 600 V, 28 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, featuring fast body diode (trr = 142–284 ns), low RDS(on) = 0.123 Ω @ 10 V, and ultra-low Qg = 120 nC max - optimized for high-frequency ZVS LLC resonant converters and solar PV inverters.
For engineers reviewing the SIHF28N60EF-GE3 datasheet, SIHF28N60EF-GE3 pinout, SIHF28N60EF-GE3 application, or SIHF28N60EF-GE3 equivalent, key selection criteria include its 691 mJ UIS rating, 70 V/ns dV/dt immunity, reduced Qrr (0.97–1.94 μC), and suitability for phase-shifted bridge topologies requiring robust body diode recovery.
Technical Context
This MOSFET employs Vishay's EF-series fast-body-diode technology to minimize reverse recovery charge (Qrr) and peak reverse recovery current (IRRM = 13.2 A), enabling efficient operation in hard- and soft-switched SMPS. Its low Ciss (2714 pF typ.) and Crss (6 pF) support high-speed gate drive with minimal Miller effect.
The device integrates an avalanche-rated structure (EAS = 691 mJ) and exhibits stable RDS(on) temperature coefficient (0.76 V/°C), supporting reliable conduction across -55 °C to +150 °C junction range. Gate threshold voltage (2.0–4.0 V) ensures compatibility with standard 10 V gate drivers while maintaining noise immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 480 V DC bus designs with 25 % margin for transient overvoltage in PV inverters and telecom PSUs |
| RDS(on) max | 0.123 Ω @ VGS = 10 V - enables <1.7 W conduction loss at 14 A continuous drain current (TC = 100 °C) |
| Qg max | 120 nC - reduces gate drive power and allows use of lower-power drivers in high-frequency (>100 kHz) LLC converters |
| trr / Qrr | 142–284 ns / 0.97–1.94 μC - minimizes switching losses and EMI during body diode commutation in ZVS topologies |
| EAS | 691 mJ - provides single-pulse unclamped inductive switching robustness without external snubbers in welder or charger designs |
| dV/dt immunity | 70 V/ns - prevents false turn-on in high-dV/dt environments such as motor drives and 3-level inverters |
| RthJC | 3.2 °C/W - enables thermal design with ≤120 °C case temperature under 39 W dissipation in forced-air or heatsink-mounted setups |
Pinout & Package
TO-220 FULLPAK package: insulated tab, vertical leadframe, exposed copper drain pad on underside; footprint compatible with standard TO-220 mounting but electrically isolated case (drain-connected tab).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level drive; low input capacitance (Ciss = 2714 pF) eases driver selection |
| D (Drain) | High-side power output | Connected to internal drain metallization and exposed copper pad - must be thermally and electrically tied to heatsink |
| S (Source) | Power return / reference node | Common return for load current and gate drive loop; low-inductance layout critical for dV/dt stability |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 142–284 ns and IRRM = 13.2 A enable clean zero-voltage switching in LLC and phase-shifted bridge without external diodes |
| Low Qg × RDS(on) FOM | 120 nC × 0.123 Ω = 14.76 - benchmark figure-of-merit for high-efficiency 600 V MOSFETs in resonant converters |
| Avalanche energy rated | 691 mJ single-pulse UIS - eliminates need for external clamping in inductive load switching (e.g., battery chargers, welding) |
| Lead (Pb)-free & Halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B - suitable for industrial and telecom end-equipment |
| High dV/dt immunity | 70 V/ns at TJ = 125 °C - suppresses spurious turn-on in high-speed, high-bus-voltage applications like solar string inverters |
Applications
| Solar Photovoltaic Inverters | Telecom Server Power Supplies |
|---|---|
|
Use Scenario: DC/AC conversion stage in string inverters using 3-level NPC or T-type topologies with 600–1000 V DC input. IC Role / Device Role / Timing Role: High-side switching element in half-bridge leg; body diode conducts freewheeling current during dead-time. Use Value: Low Qrr and fast trr reduce switching losses by >15 % vs. standard MOSFETs, improving inverter efficiency at 25 kHz switching frequency. |
Use Scenario: Primary-side switch in 48 V–54 V input, 12 V/200 A output LLC resonant converter for datacenter servers. IC Role / Device Role / Timing Role: Resonant switch operating in ZVS mode; gate timing synchronized to resonant tank zero-crossing. Use Value: 120 nC Qg and 2714 pF Ciss allow precise gate control with minimal driver loss, sustaining >96 % efficiency at full load. |
| HID & LED Lighting Ballasts | Industrial Battery Chargers |
|
Use Scenario: High-frequency electronic ballast driving 150–400 W metal halide lamps with dimming via variable frequency control. IC Role / Device Role / Timing Role: Main switching transistor in series-resonant topology; body diode handles lamp ignition current reversal. Use Value: 13.2 A IRRM and 284 ns max trr prevent diode failure during rapid polarity reversals at 200–500 kHz operation. |
Use Scenario: Output rectification and isolation switch in 3 kW EVSE or forklift battery charger using phase-shifted full-bridge. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary side; body diode used for initial startup before synchronous control engages. Use Value: 28 A continuous ID and 70 V/ns dV/dt rating ensure stable operation during high-current surge charging (100+ A peak). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage fast-body-diode MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW28N60FD | RDS(on) = 0.135 Ω, Qg = 115 nC, trr = 160 ns - slightly higher conduction loss, comparable switching performance | Qualified per AEC-Q101; preferred for automotive onboard chargers where qualification is mandatory | Choose STW28N60FD only if automotive qualification is required; otherwise SIHF28N60EF-GE3 offers lower RDS(on) and better Qrr |
| IXFH28N60X3 | RDS(on) = 0.115 Ω, Qg = 92 nC, trr = 120 ns - superior switching specs but higher cost and non-TO-220 FULLPAK (TO-247) | Requires larger PCB footprint and different heatsink interface; suited for space-constrained but performance-critical industrial UPS | Select IXFH28N60X3 when lowest possible Qg and trr are critical and TO-247 packaging is acceptable; SIHF28N60EF-GE3 remains optimal for TO-220-based cost-sensitive designs |
Compared with STW28N60FD and IXFH28N60X3, SIHF28N60EF-GE3 delivers the best balance of low RDS(on), industry-standard TO-220 FULLPAK form factor, and proven fast-body-diode performance for telecom, solar, and lighting - without automotive or premium-package premiums.
Availability
SIHF28N60EF-GE3 is available at Aetrix Electronics and suitable for solar photovoltaic inverters, telecom server power supplies, and industrial battery chargers requiring stable component supply and long-term manufacturing continuity.
Supply support for SIHF28N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The EF Series - including SIHF28N60EF-GE3 - was engineered specifically for high-efficiency resonant and soft-switched power conversion, targeting reduced body diode losses in LLC, phase-shifted bridge, and 3-level inverter topologies.
FAQ
What is the maximum continuous drain current rating for SIHF28N60EF-GE3 at 100 °C case temperature?
The SIHF28N60EF-GE3 supports 18 A continuous drain current at TC = 100 °C, derated linearly from 28 A at TC = 25 °C using a 0.31 W/°C factor. This rating assumes proper heatsinking and is validated per Vishay's absolute maximum ratings table in document 91604.
Does SIHF28N60EF-GE3 have a fully rated avalanche capability, and what is its single-pulse energy limit?
Yes, SIHF28N60EF-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (EAS) of 691 mJ under test conditions of VDD = 50 V, L = 28.2 mH, Rg = 25 Ω, and IAS = 7 A. This rating is confirmed in the Absolute Maximum Ratings section of the SIHF28N60EF-GE3 datasheet.
What is the gate threshold voltage range for SIHF28N60EF-GE3, and how does it affect gate drive design?
The SIHF28N60EF-GE3 has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while providing noise margin against false triggering - critical for high-dV/dt applications like solar inverters where the SIHF28N60EF-GE3 operates.
How does the body diode performance of SIHF28N60EF-GE3 compare to standard 600 V MOSFETs in hard-commutated circuits?
The SIHF28N60EF-GE3 features a fast body diode with trr = 142–284 ns and Qrr = 0.97–1.94 μC - up to 50 % lower Qrr than standard 600 V MOSFETs. In hard-commutated circuits like phase-shifted bridges, this directly reduces switching loss, diode stress, and EMI generation, making the SIHF28N60EF-GE3 especially effective in telecom and industrial SMPS.
Is SIHF28N60EF-GE3 RoHS-compliant and halogen-free, and what does the "-GE3" suffix indicate?
Yes, SIHF28N60EF-GE3 is both RoHS-compliant and halogen-free, meeting JEDEC JS709B and EU Directive 2011/65/EU. The "-GE3" suffix denotes Vishay's lead (Pb)-free and halogen-free packaging with matte tin plating and TO-220 FULLPAK construction - verified in the Ordering Information section of the SIHF28N60EF-GE3 datasheet.
SIHF28N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 123mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2714 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 39W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220 Full Pack
SIHF28N60EF-GE3 FAQ
1.How can I place an order for SIHF28N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHF28N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHF28N60EF-GE3 reliable?
The price and inventory of SIHF28N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF28N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHF28N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF28N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHF28N60EF-GE3?
SIHF28N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHF28N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHF28N60EF-GE3?
For technical support, including SIHF28N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF28N60EF-GE3 requirements.
6.How does Aetrix verify that SIHF28N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHF28N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF28N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHF28N60EF-GE3?
All SIHF28N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF28N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHF28N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHF28N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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